IGBT MODULE Spec.No.IGBT-SP-05023 R0 MBN1200E25C Silicon N-channel IGBT OUTLINE DRAWING FEATURES High thermal fatigue durability. (delta Tc=70, N>30,000cycles) Low noise due to ultra soft fast recovery diode. High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. High reliability, high durability module. Isolated head sink (terminal to base). Unit in mm Weight : 1300(g) o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Symbol Collector Emitter Voltage Gate Emitter Voltage VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 1.80.2/91N*m Unit MBN1200E25C V V 2,500 20 1,200 A 2,400 1,200 A 2,400 o C -40 ~ +125 o C -40 ~ +125 VRMS 4,000(AC 1 minute) 2/10 (1) N*m 6 (2) (2) Recommended Value 5.50.5N*m o ELECTRICAL CHARACTERISTICS (Tc=25 C ) Item Symbol Unit Min. Typ. Max. -500 4.0 - 20 3.0 5.0 175 2.2 3.2 4.2 1.9 3.4 2.0 12 60 +500 3.5 6.0 4.4 5.2 3.4 5.6 2.5 Test Conditions o VCE=2,500V, VGE=0V, Tj=25 C Collector Emitter Cut-Off Current I CES mA o VCE=2,500V, VGE=0V, Tj=125 C o Gate Emitter Leakage Current IGES nA VGE=20V, VCE=0V, Tj=25 C o Collector Emitter Saturation Voltage VCE(sat) V IC=1,200A, VGE=15V, Tj=125 C o Gate Emitter Threshold Voltage VGE(TO) V VCE=15V, IC=120mA, Tj=25 C o Input Capacitance Cies nF VCE=10V, VGE=0V, f=100kHz, Tj=25 C o Internal Gate Resistance Rge VCE=10V, VGE=0V, f=100kHz, Tj=25 C Rise Time tr VCC=1,000V, Ic=1,200A Turn On Time ton L=100nH Switching Times s Fall Time tf RG(ON/OFF)=6.8/1.5 (3) o Turn Off Time toff VGE=15V, Tj=125 C o Peak Forward Voltage Drop VFM V Ic=1,200A, VGE=0V, Tj=125 C Vcc=1,000V, Ic=1,200A, L=100nH Reverse Recovery Time trr s 0.9 1.4 o Tj=125 C Turn On Loss Eon(10%) J/P 1.8 2.3 VCC=1,000V, Ic=1,200A, L=100nH Turn Off Loss Eoff(10%) J/P 1.2 1.7 RG(ON/OFF)=6.8/1.5 (3) o Reverse Recovery Loss Err(10%) J/P 0.35 0.85 VGE=15V, Tj=125 C Stray inductance module LSCE nH 12 IGBT Rth(j-c) o 0.0085 Thermal Impedance C/W Junction to case FWD Rth(j-c) 0.017 o C/W Contact Thermal Impedance Rth(c-f) 0.006 Case to fin Notes:(3) RG value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. Counter arm IGBT VGE=-15V http://store.iiic.cc/ HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/products/power/pse/ http://store.iiic.cc/