MMBTA63 / MMBTA64
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Types Available
(MMBTA13 /MMBTA14)
• Ideal for Low Power Amplification and Switching
• High Current Gain
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Terminal Connections: See Diagram
• MMBTA63 Marking K2E, K3E See Page 3
• MMBTA64 Marking K3E See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
A
E
JL
TOP VIEW
M
DS30055 Rev. 8 - 2 1 of 3
www.diodes.com MMBTA63 / MMBTA64
© Diodes Incorporated
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α 0° 8°
All Dimensions in mm
BC
C
BE
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -30 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -10 V
Collector Current - Continuous (Note 1) IC -500 mA
Power Dissipation (Note 1) PD 300 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage V(BR)CEO -30 ⎯ V IC = -100μA VBE = 0V
Collector Cutoff Current ICBO ⎯ -100 nA VCB = -30V, IE = 0
Emitter Cutoff Current IEBO ⎯ -100 nA VEB = -10V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain MMBTA63
MMBTA64
MMBTA63
MMBTA64 hFE
5,000
10,000
10,000
20,000
⎯ ⎯
IC = -10mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -1.5 V IC = -100mA, IB = -100μA
Base-Emitter Saturation Voltage VBE(SAT) ⎯ -2.0 V IC = -100mA, VCE = -5.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product fT 125 ⎯ MHz VCE = -5.0V, IC = -10mA,
f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
H
GD
D
K
E
B
C
DS30055 Rev. 8 - 2 2 of 3
www.diodes.com MMBTA63 / MMBTA64
© Diodes Incorporated
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
400
0
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
110 100 1,000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
C
100
1,000
10,000,000
10,000
100,000
1,000,000
110100
h, D
1,000
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0.1 110
V, BASE EMI
100
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter V oltage vs. Collector Current
C
1
10
1,000
100
110 100
f,
G
AIN BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs. Collector Current
C
Ordering Information (Note 5)
Device Packaging Shipping
MMBTA63-7-F
MMBTA64-7-F SOT-23 3000/Tape & Reel
DS30055 Rev. 8 - 2 3 of 3
www.diodes.com MMBTA63 / MMBTA64
© Diodes Incorporated
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KxE
YM
KxE = Product Type Marking Code, ex: K2E = MMBTA63
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
