MCC 2SB772 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features * * * * PNP Silicon Plastic-Encapsulate Transistor Capable of 1.25Watts of Power Dissipation. Collector-current 3.0A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 30 --- Vdc 40 --- Vdc A K OFF CHARACTERISTICS V (BR)CEO V (BR)CBO V (BR)EBO I CBO ICEO IEBO Collector-Emitter Breakdown Voltage (IC=10mAdc, IB =0) Collector-Base Breakdown Voltage (I C=100uAdc, IE =0) Emitter-Base Breakdown Voltage (I E =100uAdc, IC=0) Collector Cutoff Current (V CB=40Vdc, IE =0) Collector Cutoff Current (V CE =30Vdc, IB=0) Emitter Cutoff Current (V EB =6.0Vdc, IC=0) D R E 5.0 --- Vdc --- 1.0 uAdc --- 1.0 uAdc --- 1.0 uAdc h FE(2) V CE(sat) V BE(sat) DC Current Gain (IC=1.0Adc, V CE=2.0Vdc) DC Current Gain (IC=100mAdc, VCE=2.0Vdc) Collector-Emitter Saturation Voltage (I C=2.0Adc, IB =0.2Adc) Base-Emitter Saturation Voltage (I C=2.0Adc, IB =0.2Adc) G 60 400 --- 32 --- --- --- 0.5 Vdc --- 2.0 Vdc C 1 2 J 3 J 50 --- MHz CLASSIFICATION OF HFE (1) R 60-120 PIN 1. PIN 2. PIN 3. Q EMITTER COLLECTOR BASE Transistor Frequency (I C=0.1Adc, V CE=5.0Vdc, f=10MHz) Rank Range P L H SMALL-SIGNAL CHARACTERISTICS fT N M F ON CHARACTERISTICS h FE(1) B O 100-200 Y 160-320 GR 200-400 ! www.mccsemi.com Revision: 2 2003/04/30