Decembe r 2005 / B http://takcheong.com
1
Licensed by ON Semiconductor,
A trademark of semiconductor
Components Industries, LLC for
Zener Technology and Products.
TAK CHEONG
®
1.3 Watt DO-41 Hermetically
Sealed Glass Zener Voltage
Regulators
Maximum Ratings
Rating Symbol Value Units
Maximum Steady State Power Dissipation
@TL≤50℃, Lead Length = 3/8”
Derate Above 50℃
PD
1.3
8.67
W
mW/℃
Operating and Storage
Temperature Range TJ, Tstg -65 to +200 °C
Specification Features:
Zener Voltage Range = 3.3V to 100V
ESD Rating of Clas 3 (>6 KV) per Human Body Model
DO-41 Package (DO-204AL)
Double Slug Type Construction
Metallurgical Bonded Construction
Oxide Passivated Die
Specification Features:
Case : Double slug type, hermetically sealed glass
Finish : All external surfaces are corrosion resistant and leads are readily solderable
Polarity : Cathode indicated by polarity band
Mounting: Any
Maximum Lead Temperature for Soldering Purposes
230℃, 1/16” from the case for 10 seconds
Ordering Information
Device Package Quantity
BZX85Cxxx Axial Lead 2000 Units / Box
BZX85CxxxRL Axial Lead 6000 Units / Tape & Reel
BZX85CxxxRL2* Axial Lead 6000 Units / Tape & Reel
BZX85CxxxTA Axial Lead 4000 Units / Tape & Ammo
BZX85CxxxTA2* Axial Lead 4000 Units / Tape & Ammo
* The “2” suffix refer to 26mm tape spacing.
BZX85C3V3 through BZX85C100 Series
Cathode Anode
L = Logo
85Cxxx = Device Code
L
85C
xxx
Devices listed in bold italic are Tak Cheong Preferred
devices. Preferred devices are recommended choices
for future use and best overall value.
BZX85C3V3 through BZX85C100 Series
http://www.takcheong.com
2
ELECTRICAL CHARACTERISTICS (TA = 25ºC unless
otherwise noted. VF = 1.2 V Max @ IF = 200mA for all types)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Zener Current
ZZT Maximum Zener Impedance @ IZT
IZk Reverse Zener Current
ZZk Maximum Zener Impedance @ IZk
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
IrSurge Current @ TA = 25ºC
ELECTRICAL CHARACTERISTICS (TA = 25ºC unless otherwise noted, VF = 1.2 V Max @ IF = 200mA for all types)
Zener Voltage (Note 2 & 3.) Zener Impedance (Note 4.) Leakage Current
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
Ir
(Note 5.)
Device
(Note 1.) Device
Marking Min Nom Max (mA) (Ω
ΩΩ
Ω)(
Ω
ΩΩ
Ω)(mA) (µ
µµ
µA Max) (Volts) (mA)
BZX85C3V3 BZX85C3V3 3.1 3.3 3.5 80 20 400 1 60 1 1380
BZX85C3V6 BZX85C3V6 3.4 3.6 3.8 60 15 500 1 30 1 1260
BZX85C3V9 BZX85C3V9 3.7 3.9 4.1 60 15 500 1 5 1 1190
BZX85C4V3 BZX85C4V3 4 4.3 4.6 50 13 500 1 3 1 1070
BZX85C4V7 BZX85C4V7 4.4 4.7 5 45 13 600 1 3 1.5 970
BZX85C5V1 BZX85C5V1 4.8 5.1 5.4 45 10 500 1 1 2 890
BZX85C5V6 BZX85C5V6 5.2 5.6 6 45 7 400 1 1 2 810
BZX85C6V2 BZX85C6V2 5.8 6.2 6.6 35 4 300 1 1 3 730
BZX85C6V8 BZX85C6V8 6.4 6.8 7.2 35 3.5 300 1 1 4 660
BZX85C7V5 BZX85C7V5 7 7.5 7.9 35 3 200 0.5 1 4.5 605
BZX85C8V2 BZX85C8V2 7.7 8.2 8.7 25 5 200 0.5 1 5 550
BZX85C9V1 BZX85C9V1 8.5 9.1 9.6 25 5 200 0.5 1 6.5 500
BZX85C10 BZX85C10 9.4 10 10.6 25 7 200 0.5 0.5 7 454
BZX85C11 BZX85C11 10.4 11 11.6 20 8 300 0.5 0.5 7.7 414
BZX85C12 BZX85C12 11.4 12 12.7 20 9 350 0.5 0.5 8.4 380
1. TOLERANCE AND TYPE NUMBER DESIGNATION
Tolerance designation – the type numbers listed have zener voltage min/max limits as shown. Device tolerance of ±2% are
indicated by a “B” instead of a “C”.
2. SPE CIALS AVAILABLE INCLUDE
Nominal zener voltages between the voltages shown and tighter vol tage tolerances. For detailed information on price,
availability and delivery, contact your nearest Tak Cheong representative.
3. ZENER VOLTAGE (VZ) MEASUREMENT
VZ is measured aft er the test current has been applied t o 40 ±10msec., while maintaining the lead temperature (TL) at 30°C
±1°C and 3/8” lead length.
4. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from the 60 cycle AC voltage, which resul ts when an AC current having an RMS value
equal to 10% of the DC zener current (IZT or IZK) is superimposed on IZT or IZK.
5. SURGE CURRENT (Ir) NON-REP ETITIVE
The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of ½ square
wave or equivalent sine wave puls e of 1/120 second durat i on superimposed on the test current IZT per JEDEC registration;
however, act ual device capability is as described in figure 5 of the General Data DO-41 Glass.
BZX85C3V3 through BZX85C100 Series
http://www.takcheong.com
3
ELECTRICAL CHARACTERISTICS (TA = 25ºC unless otherwise noted, VF = 1.2 V Max @ IF = 200mA for all types)
Zener Voltage (Note 7 & 8.) Zener Impedance (Note 9.) Leakage Current
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
Ir
(Note 10.)
Device
(Note 6.) Device
Marking Min Nom Max (mA) (Ω
ΩΩ
Ω)(
Ω
ΩΩ
Ω)(mA) (µ
µµ
µA Max) (Volts) (mA)
BZX85C13 BZX85C13 12.4 13 14.1 20 10 400 0.5 0.5 9.1 344
BZX85C15 BZX85C15 13.8 15 15.6 15 15 500 0.5 0.5 10.5 304
BZX85C16 BZX85C16 15.3 16 17.1 15 15 500 0.5 0.5 11 285
BZX85C18 BZX85C18 16.8 18 19.1 15 20 500 0.5 0.5 12.5 250
BZX85C20 BZX85C20 18.8 20 21.2 10 24 600 0.5 0.5 14 225
BZX85C22 BZX85C22 20.8 22 23.3 10 25 600 0.5 0.5 15.5 205
BZX85C24 BZX85C24 22.8 24 25.6 10 25 600 0.5 0.5 17 190
BZX85C27 BZX85C27 25.1 27 28.9 8 30 750 0.25 0.5 19 170
BZX85C30 BZX85C30 28 30 32 8 30 1000 0.25 0.5 21 150
BZX85C33 BZX85C33 31 33 35 8 35 1000 0.25 0.5 23 135
BZX85C36 BZX85C36 34 36 38 8 40 1000 0.25 0.5 25 125
BZX85C39 BZX85C39 37 39 41 6 45 1000 0.25 0.5 27 115
BZX85C43 BZX85C43 40 43 46 6 50 1000 0.25 0.5 30 110
BZX85C47 BZX85C47 44 47 50 4 90 1500 0.25 0.5 33 95
BZX85C51 BZX85C51 48 51 54 4 115 1500 0.25 0.5 36 90
BZX85C56 BZX85C56 52 56 60 4 120 2000 0.25 0.5 39 80
BZX85C62 BZX85C62 58 62 66 4 125 2000 0.25 0.5 43 70
BZX85C68 BZX85C68 64 68 72 4 130 2000 0.25 0.5 47 65
BZX85C75 BZX85C75 70 75 80 4 150 2000 0.25 0.5 51 60
BZX85C82 BZX85C82 77 82 87 2.7 200 3000 0.25 0.5 56 55
BZX85C91 BZX85C91 85 91 96 2.7 250 3000 0.25 0.5 62 50
BZX85C100 BZX85C100 96 100 106 2.7 350 3000 0.25 0.5 68 45
6. TOLERANCE AND TYPE NUMBER DESIGNATION
Tolerance designation – the type numbers listed have zener voltage min/max limits as shown. Devic e t oleranc e of ±2% are
indicated by a “B” instead of a “C”.
7. SPECI ALS AVAIL ABLE IN CL UDE
Nominal zener voltages bet ween the volt ages shown and tight er vol tage tolerances. For detailed information on price,
availability and delivery, contact your nearest Tak Cheong represent ative.
8. ZENER VOLTAGE (VZ) MEASUREMENT
VZ is measured after the test current has been applied to 40 ±10msec., while maintaining the lead temperature (TL) at 30°C
±1°C and 3/8” lead length.
9. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from the 60 cycle AC voltage, which results when an AC current having an RMS value
equal to 10% of the DC zener current (IZT or IZK) is superimposed on IZT or IZK.
10. SURGE CURRENT (Ir) NON-REP ETITIVE
The rat i ng listed in the electrical characteris t ic s table is maximum peak, non-repet itive, reverse surge current of ½ square
wave or equival ent sine wave pulse of 1/120 second duration superim posed on the test current IZT per JEDEC regist ration;
however, actual device capabilit y is as described in fi gure 5 of the General Data DO-41 Glass.
BZX85C3V3 through BZX85C100 Series
http://www.takcheong.com
4
Figure 1. Power Temperature Derating Curve
TL, LEAD TEMPERATURE (°C)
0
0.1
0.5
0.9
1.3
1.7
PD, STEADY STATE POWER DISSIPATION (WATTS)
20 40 60 80 100 120 140 160 180 200
BZX85C3V3 through BZX85C100 Series
http://www.takcheong.com
5
Figure 2. Temperature Coefficients
(-55 °C to +150 °C temperature range; 90% of the units are in the ranges indicated.)
a. Range for Units to 12 Volts b. Range for Units to 12 to 100 Volts
+12
+10
+8
+6
+4
+2
0
-2
-4
VZ, ZENER VOLTAGE (VOLTS)
θV
Z, TEMPERATURE COEFFICIENT (mV/ °C)
100
70
50
30
20
10
7
5
3
2
1
10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS)
θVZ, TEMPERATURE COEFFICIENT (mV/°C)
VZ @IZT
RANGE
RANGE V Z @IZT
Figure 3. Typical Thermal Resistance
versus Lead Length Figure 4. Effect of Zener Current
175
150
125
100
75
50
25
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
L, LEAD LENGTH TO HEAT SINK (INCHES)
θJL, JUNCTION-TO-LEAD THERMAL RESISTANCE (mV/ °C)
θVZ, TEMPERATURE COEFFICIENT (mV/ °C)
+6
+4
+2
0
-2
-4
VZ, ZENER VOLTAGE (VOLTS)
VZ @ I Z
TA
20 mA
0.01 mA
1 mA
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: EFFECT TEMPERATURE COEFFICIENTS
Figure 5. Maximum Surge Power
100
70
50
30
20
10
7
5
3
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
PW, PULSE WIDTH (ms)
This graph represents 90 percentile data points.
For worst case design characteristics, multiply surge power by 2/3.
Ppk , PEAK SURGE POWER (WATTA)
11 V - 100 V NONREPETITIVE
3.3 V - 10 V NONREPETITIVE
5% DUTY CYCLE
10% DUTY CYCLE
20% DUTY CYCLE
RECT ANGULAR
WAVEFORM
TJ = 25°C PRIOR TO
INITIAL PULSE
23456789
10 11 12
345678
= 25 °C
BZX85C3V3 through BZX85C100 Series
http://www.takcheong.com
6
VF , FORWARD VOLTAGE (VOLTS)
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
1000
500
200
100
50
20
10
5
2
1
IF, FOR WARD CURRENT (mA)
MAXIMUM
150 °C
75°C
0°C
25°C
Figure 6. Effect of Zener Current
on Zener Impedance Figure 7. Effect of Zener Voltage
on Zener Impedance
Figure 8. T ypical Leakage Current
1000
500
200
100
50
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
IZ, ZENER CURRENT (mA)
ZZ, DYNAMIC IMPEDANCE (OHMS)
1000
700
500
200
100
70
50
20
10
7
5
2
1
1 2 100
VZ, ZENER VOLTAGE (V)
35 710 2030 5070
ZZ, DYNAMIC IMPEDANCE (OHMS)
10000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
IR, LEAKAGE CURRENT (m A)
3 456 78 9101112131415
VZ , NOMINAL ZENER VOLTAGE (VOLTS)
+25 °C
+125 °C
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
TJ = 25 °C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
6.2 V
27 V
VZ = 2.7 V
47 V
TJ = 25 °C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
20 mA
5 mA
IZ = 1 mA
0 V BIAS
1 V BIAS
400
300
200
100
50
20
10
8
4
1 2 5 10 20 50 100
VZ, NOMINAL VZ (VOLTS)
C, CAP ACIT ANCE (pF)
50% OF BREAKDOWN BIAS
MINIMUM
Figure 9. T ypical Capacitance versus VZ
Figure 10. Typical Forward Characteristics
BZX85C3V3 through BZX85C100 Series
http://www.takcheong.com
7
APPLICATION NOTE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA.
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
is the power dissipation. The value for θLA will vary and
depends o n the device mounting method. θLA is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
TJ = TL + ∆TJL.
∆TJL is the increase in junction temperature above the lead
temperature and may be found as follows:
∆TJL = θJLPD.
θJL may be determined from Figure 3 for dc power
conditions. For worst-case design, using expected limits of
IZ, limits of PD and the extremes of TJ(∆TJ) may be
estimated. Changes in voltage, VZ, can then be found from:
∆V = θVZ ∆TJ.
θVZ, the zener voltage temperature coefficient, is found
from Figure 2.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 5. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 5 be exceeded.
