1N5391S – 1N5399S
1.5A SILICON RECTIFIER
Data Sheet 2579, Rev. —
Features
Diffused Junction
Fast Switching for High Efficiency
High Current Capability and Low Forward Voltage Drop
Low Reverse Leakage Current
Surge Overload Rating to 50 A Peak
Plastic Material – UL Flammability Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.30 grams (approx.)
Mounting Position: Any
Marking: Type Number
Maximum Ratings and Electrical Characteristics @TBAB=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol 1N
5391S 1N
5392S 1N
5393S 1N
5395S 1N
5397S 1N
5398S 1N
5399S Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current
(Note 1) @T
BAB = 70°C IO 1.5 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method) IFSM 50 A
Forward Voltage @IBFB = 1.5A VFM 1.1 V
Peak Reverse Current @TBAB = 25°C
At Rated DC Blocking Voltage @TBAB = 100°C IRM 5.0
50 µA
Typical Junction Capacitance (Note 2) Cj 20 pF
Typical Thermal Resistance Junction to Ambient
(Note 1) RθJA 55 K/W
Operating Temperature Range Tj -65 to +150 °C
Storage Temperature Range TSTG -65 to +150 °C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
SENSITRON
SEMICONDUCTOR
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DO-41
Dim Min Max Min Max
A 25.4 — 1.000 —
B 4.06 5.21 0.159 0.205
C 0.71 0.864 0.028 0.034
D 2.00 2.72 0.079 0.107
In mm In inch
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1N5391S – 1N5399S
1.5A SILICON RECTIFIER
Data Sheet 2579, Rev. —
SENSITRON
SEMICONDUCTOR
0.01
0.1
1.0
10
0.6 0.8 1.0 1.2 1.4 1.6
I , INSTANTANE
O
US F
O
RWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
T=25°C
j
25 50 75 100 125 150 175
T AMBIENT TEMPERATURE (ºC)
A
Fi
g
. 1, Forward Current Deratin
g
Curve
I , AVERAGE FORWARD RECTIFIED CURRENT (A
)
(AV)
0
0.5
1.0
1.5
1.0
10
100
1.0 10 100
C
,
C
APA
C
ITAN
C
E
(
pF
)
j
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Junction Capacitance
T=25°C
j
f = 1MHz
1.0 10 100
0
10
20
30
40
50
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Peak Forward Surge Current
I , PEAK F
O
RWARD SURGE CURRENT (A)
FSM
8.3 ms SINGLE HALF SINE-WAVE
(JEDEC METHOD)
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
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