BAR63-02W
Aug-27-20011
Silicon PIN Diode
PIN diode for high speed switching
of RF signals
Low forward resistance, small inductance
Very low capacitance
For frequencies up to 3 GHz
1VES05991
2
Type Marking Pin Configuration Package
BAR63-02W G 1 = C 2 = A SCD80
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR50 V
Forward current IF100 mA
Total power dissipation, TS = 115 °C Ptot 250 mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 150 °C
Storage temperature Tstg -55 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
140 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance