a. ~., 2$C2120 TRANSISTOR(NPN) TO-92 Plastic-Encapsulate Transistors FEATURES oga TO-92 | 1.EMITTER | 2.COLLECTOR & | Vierycso: 35 V 3. E ; ' | BAS ane fage junction temperature range : Tsg: -55C to + 1500 4123 Ts: 150 ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) Collector-base breakdown voltage ViBR)CBO {c= 0.1mA, le=0 35 Vv Collector-emitter breakdown voltage V(BR}CEO !c= 10 mA, !s=0 30 Vv Emitter-base breakdown voltage Vi(BRIEBO le= 0.1mA, ic=0 5 Vv Collector cut-off current cao Ves= 35 V, le=0 0.1 HA Collector cut-off current Iceo Voe= 25 V, la=0 0.1 BA Emitter cut-off current leao Veo= 5 V, lc=0 0.1 BA DC current gain hre Vce= 1 V, ic= 100 mA 100 320 Collector-emitter saturation voltage VcEsat ic= 500 mA, la= 20 mA 0.5 Vv Base-emitter voltage Vee Vce= 1 V, ic= 10 mA 0.8 Vv Transition frequency , fr Vce= 5 V, c= 10 mA 100 MHz CLASSIFICATION OF here Rank 0 Y Range 100-200 160-320Typical Characteristics COLLECTOR CURRENT Ic (mA) (Vv) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsst COLLECTOR POWER DISSIPATION Pc (mW) 0.01 Ic - VCE 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE VcR (V) VCE sat ~ Ic COMMON EMITTER Io /Ip=25 Ta= 100C 3 10 30 100 300 1000 COLLECTOR CURRENT Ic (mA) Pc ~ Ta Te=Ta INFINITE HEAT SINK @ NO HEAT SINK 20 40 60 80 100 120 140 160 180 AMBIENT TEMPERATURE Ta (C) DC CURRENT GAIN bre COLLECTOR CURRENT Ic (mA) 6 2$C2120 hreE - Ic 3 10 30 100 300 1000 COLLECTOR CURRENT Ic (mA) Ic ~ VBE COMMON EMITTER VcE=1V 0.2 0.4 06 0.8 1.0 12 BASE-EMITTER VOLTAGE Vpp (V)