© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/21/18
GEN2 SiC Schottky Diode
SiC Schottky Diode
LSIC2SD120D10, 1200 V, 10 A, TO-263-2L
RoHS
LSIC2SD120D10
Features
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• 175 °C maximum
operating junction
temperature
• Excellent surge capability
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
Maximum Ratings
Characteristics Symbol Conditions Value Unit
Repetitive Peak Reverse Voltage VRRM -1200 V
DC Blocking Voltage VRTj = 25 °C 1200 V
Continuous Forward Current IF
TC = 25 °C 28
A
TC = 125 °C 15
TC = 151 °C 10
Non-Repetitive Forward Surge Current IFSM TC = 25 °C, TP = 10 ms, Half sine pulse 80 A
Power Dissipation PTot
TC = 25 °C 136 W
TC = 110 °C 59
Operating Junction Temperature TJ--55 to 175 °C
Storage Temperature TSTG --55 to 150 °C
Soldering Temperature (reflow MSL1) Tsold -260 °C
Description
This series of silicon carbide (SiC) Schottky diodes has
negligible reverse recovery current, high surge capability,
and a maximum operating junction temperature of 175 °C.
This diode series is ideal for applications where improve-
ments in efficiency, reliability, and thermal management
are desired.
Case
12
21
Case
Circuit Diagram TO-263-2L Applications
• Boost diodes in PFC or
DC/DC stages
• Switch-mode power
supplies
• Uninterruptible power
supplies
• Solar inverters
• Industrial motor drives
• EV charging stations
Pb
• Littelfuse “RoHS” logo =
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
• Littelfuse “Pb-free” logo =
Pb-free lead plating
Environmental
RoHS
Pb
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/21/18
GEN2 SiC Schottky Diode
SiC Schottky Diode
LSIC2SD120D10, 1200 V, 10 A, TO-263-2L
Characteristics Symbol Conditions
Value
Unit
Min. Typ. Max.
Forward Voltage VF
IF = 10 A, TJ = 25 °C -1. 5 1. 8 V
IF = 10 A, TJ = 175 °C - 2.2
Reverse Current IR
VR = 1200 V , TJ = 25 °C - <1 100 μA
VR = 1200 V , TJ = 175 °C -10
Total Capacitance C
VR = 1 V, f =1 MHz - 582
pF
VR = 400 V, f = 1 MHz - 53
VR = 800 V, f = 1 MHz - 40
Total Capacitive Charge QC VR = 800 V, - 57 nC
Electrical Characteristics
Footnote: TJ = +25 °C unless otherwise specified
Thermal Characteristics
Characteristics Symbol Conditions
Value
Unit
Min. Typ. Max.
Thermal Resistance RθJC --1. 1 °C/W
Q
c
=
V
R
C(V)dV
∫
0
Figure 2: Typical Reverse CharacteristicsFigure 1: Typical Foward Characteristics
0
2
4
6
8
10
12
14
16
18
20
-0.5 0.51.5 2.53.5 4.5
Forward Current (A)
Forward Voltage (V)
TJ = 25
°C
TJ= 125
°C
TJ= 150
°C
°C
TJ= 175
TJ = -55
°C
Reverse Current, I
R
(A)
1E -8
1E -7
1E -6
1E -5
1E
-4
0200 400 600 80010001200
Reverse Voltage, V
R
(V)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/21/18
GEN2 SiC Schottky Diode
SiC Schottky Diode
LSIC2SD120D10, 1200 V, 10 A, TO-263-2L
Figure 5: Capacitance vs. Reverse Voltage Figure 6: Capacitive Charge vs. Reverse Voltage
Figure 4: Current Derating
Figure 3: Power Derating
0
20
40
60
80
100
120
140
160
25 50 75 100125 150175
Power (W)
Case Temperature (
°C
)
0
20
40
60
80
100
120
25 50 75 100125 150 175
Case Temperature (°C )
Forward Current (A)
10 % Duty
30 % Duty
50 % Duty
70 % Duty
DC
0
100
200
300
400
500
600
110100 1000
Capacitance (pF)
Voltage (V)
0
10
20
30
40
50
60
70
0200 400 600 800 1000
Capacive Charge (nC)
Voltage (V)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/21/18
GEN2 SiC Schottky Diode
SiC Schottky Diode
LSIC2SD120D10, 1200 V, 10 A, TO-263-2L
Figure 7: Stored Energy vs. Reverse Voltage Figure 8: Transient Thermal Impedance
0
2
4
6
8
10
12
14
16
18
0200 400600 8001000
Stored Energy (
μ
J)
Voltage (V)
1E-03
1E-02
1E-01
1E+00
1E-061E-05 1E-041E-03 1E-021E-01 1E+00
Normalized Transient Thermal Impedance
Pulse Width (s)
Single
0.01
0.02
0.05
0.1
0.3
0.5
Dimensions-Package TO-263-2L
Symbol Millimeters
Min Nom Max
A 4.30 4.50 4.70
A1 0.00 - 0.25
b0.70 0.80 0.90
b1 1. 17 1.27 1.37
c 0.46 0.50 0.60
c1 1.25 1.30 1.40
D 9.00 9.20 9.40
D1 6.50 6.70 6.90
E 9.80 10.00 10.20
E1 7.80 8.00 8.20
E2 9.70 9.90 10.10
e 5.08 BSC
H 15.00 15.30 15.60
L2.00 2.30 2.60
L1 1. 0 0 1.20 1.40
L2 0.254 BSC
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/21/18
GEN2 SiC Schottky Diode
SiC Schottky Diode
LSIC2SD120D10, 1200 V, 10 A, TO-263-2L
Packing Option
Part Number Marking Packing Mode M.O.Q
LSIC2SD120D10 SIC2SD120D10 Tape and Reel 800
Part Numbering and Marking System
SIC2SD120D10
SIC = SiC Diode
2 = Gen2
SD = Schottky Diode
D = TO-263 Package (2 Lead
)
YY = Year
WW = Week
YYWWF
ZZZZZZ-ZZ
F = Special Code
ZZZZZZ-ZZ = Lot Number
L
F120 = Voltage Rating (1200 V)
10 = Current Rating (10 A)
TO-263 Carrier Reel Specifications
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