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BAW56T / BAV70T / BAV99T — Fast Switching Diode
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAW56T / BAV70T / BAV99T Rev. 1.0
August 2015
BAW56T / BAV70T / BAV99T
Fast Switching Diode
Features
• Fast Switching Diodes with Trr < 4.0 nsec
• Surface Mount Device at 0.95 mm Maximum Height
• MSL 1 per J-STD-020
• Pb Free and RoHS Compliant
• Matte Sn Lead Finish
• Green Mold Compound
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
BAW56T JD SOT-523 3L Tape and Reel
BAV70T JJ SOT-523 3L Tape and Reel
BAV99T JE SOT-523 3L Tape and Reel
Symbol Parameter Value Unit
VRRM Maximum Repetitive Reverse Voltage 85 V
IF(AV) Average Rectified Forward Current Single Diode 150 mA
Dual Diodes 75
TJOperating Junction Temperature 125 °C
TSTG Storage Temperature Range -55 to +125 °C
SOT-523
BAW56T
3
1 2
3
1 2
3
1 2
BAV70T BAV99T
BAW56T / BAV70T / BAV99T — Fast Switching Diode
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAW56T / BAV70T / BAV99T Rev. 1.0 2
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Note:
1. Device mounted on FR-4 PCB minimum land pad
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Parameters are tested per individual diode.
Symbol Parameter Value Unit
PDPower Dissipation 150 mW
RθJA Thermal Resistance, Junction-to-Ambient 500 °C/W
ψJL Junction-to-Lead The rmal Characteristics,
Thermocouple Soldered to Cathode 195 °C/W
Symbol Parameter Conditions Min. Max. Unit
BVRReverse Breakdown Voltage IR = 1 μA85V
IRReverse Leakage Current VR = 75 V 2 μA
VR = 25 V 0.03
VFForward Voltage
IF = 1 mA 0.7 15
V
IF = 10 mA 0.855
IF = 50 mA 1.00
IF = 150 mA 1.25
CDDiode Capa citance VR = 0 V, f = 1 MHz 4 pF
Trr Reverse Recovery Time IF = IR = 10 mA, IRR = 0.1 x IR
RL = 100 Ω4ns
BAW56T / BAV70T / BAV99T — Fast Switching Diode
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAW56T / BAV70T / BAV99T Rev. 1.0 3
Typical Performance Characteristics
Figure 1. Forward Voltage vs. Forward Current Figure 2. Reverse Current vs. Reverse Voltage
Figure 3. Reverse Voltage vs. Reverse Current Figure 4. Power Derating Curve
Figure 5. Total Capacitance vs. Reverse Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.01 0.1 1 10 100
TA = -40oC
TA = 25oC
TA = 150oC
IF - FORWARD CURRENT (mA)
VF - FORWARD VOLTAGE (V)
10 20 30 40 50 60 70 80 90 100
10-2
10-1
100
101
102
103
104
105
TA = 150oC
TA = 25oC
TA = - 40oC
IR - REVERSE CURRENT (nA)
VR - REVERSE V O LTAGE (V)
1 10 100
140
145
150
155
160
165
170
TA = 25oC
VR - REVERSE VOLTAGE (V)
IR - REVERSE CURRENT (μA)
0 25 50 75 100 125 150
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
PD - POWER DISSIPATION (W)
TL - LEAD TEMPERATURE (oC)
w.r.t. Cathode
0123456789101112131415
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
BAV99T
BAV70T
CJ - JUNCTION CAPACITANCE (pF)
VR - REVERSE V O LTAGE (V)
BAW56T
BAW56T / BAV70T / BAV99T — Fast Switching Diode
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAW56T / BAV70T / BAV99T Rev. 1.0 4
Physical Dimensions
Figure 6. 3-Lead, SOT523
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© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I76
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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