MITSUBISHI HVIGBT MODULES CM1200HC-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-34H IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 570.25 4 - M8 NUTS 570.25 C C E E 20 C CM E G E 140 1240.25 C 30 C E E CIRCUIT DIAGRAM G C 2.5 6 - 7 MOUNTING HOLES 5 18.5 61.5 11 18 28 +10 38 +10 14.5 5 screwing depth min. 7.7 35 screwing depth min. 11.7 LABEL 31.5 16.5 3 - M4 NUTS HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HC-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width Conditions VGE = 0V, Tj = 25C VCE = 0V, Tj = 25C TC = 85C Pulse (Note 1) Pulse TC = 25C, IGBT part (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1150V, VCES 1700V, VGE = 15V Tj = 125C Ratings Unit 1700 20 1200 2400 1200 2400 10400 -40 ~ +150 -40 ~ +125 -40 ~ +125 4000 V V A A A A W C C C V 10 s ELECTRICAL CHARACTERISTICS Symbol Cies Coes Cres Qg Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge VEC (Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2) Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy ICES VGE(th) IGES VCE(sat) Note 1. 2. 3. 4. VCE = VCES, VGE = 0V, Tj = 25C Min -- Limits Typ -- Max 20 IC = 120mA, VCE = 10V, Tj = 25C 4.5 5.5 6.5 V -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.50 2.95 117 16.7 6.3 11.0 2.25 1.75 -- -- 400 -- -- 440 -- 350 180 0.5 3.25 -- -- -- -- -- 2.90 -- 1.60 1.30 -- 2.70 0.80 -- 2.70 -- -- A Item Conditions VGE = VGES, VCE = 0V, Tj = 25C IC = 1200A, VGE = 15V, Tj = 25C IC = 1200A, VGE = 15V, Tj = 125C (Note 4) (Note 4) VCE = 10V, f = 100kHz VGE = 0V, Tj = 25C VCC = 850V, IC = 1200A, VGE = 15V, Tj = 25C IE = 1200A, VGE = 0V, Tj = 25C (Note 4) IE = 1200A, VGE = 0V, Tj = 125C (Note 4) VCC = 850V, IC = 1200A, VGE = 15V RG(on) = 2, Tj = 125C, Ls = 100nH Inductive load VCC = 850V, IC = 1200A, VGE = 15V RG(off) = 2, Tj = 125C, Ls = 100nH Inductive load VCC = 850V, IC = 1200A, VGE = 15V RG(on) = 2, Tj = 125C, Ls = 100nH Inductive load Unit mA V nF nF nF C V s s mJ/pulse s s mJ/pulse s C mJ/pulse Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HC-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, grease = 1W/m*K Min -- -- -- Limits Typ -- -- 10.0 Max 12.0 20.0 -- Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item M Mounting torque -- CTI da ds LC-E(int) Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part Min 7.0 3.0 1.0 -- 600 10.0 15.0 -- Limits Typ -- -- -- 1.0 -- -- -- 18 Max 13.0 6.0 2.0 -- -- -- -- -- Unit N*m kg -- mm mm nH HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HC-34H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 2400 2400 Tj = 25C VCE = 10V VGE = 15V 2000 2000 VGE = 12V 1600 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) VGE = 20V VGE = 10V 1200 800 VGE = 8V 400 1600 1200 800 400 Tj = 25C Tj = 125C 0 1 2 3 4 5 0 6 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 12 5 5 VGE = 15V EMITTER-COLLECTOR VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0 4 3 2 1 4 3 2 1 Tj = 25C Tj = 125C 0 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT (A) Tj = 25C Tj = 125C 0 0 400 800 1200 1600 2000 2400 EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HC-34H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules GATE CHARGE CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 103 20 VGE = 0V, Tj = 25C f = 100kHz 7 5 VCC = 850V, IC = 1200A Tj = 25C GATE-EMITTER VOLTAGE (V) 3 2 CAPACITANCE (nF) Cies 102 7 5 3 2 Coes 101 7 5 Cres 16 12 8 4 3 2 100 -1 10 5 7 101 0 5 7 102 2 3 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (C) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2400 VCC = 850V, VGE = 15V RG(on) = RG(off) = 2 Tj = 125C, Inductive load 1200 SWITCHING ENERGIES (mJ/pulse) 2 3 VCC = 850V, IC = 1200A VGE = 15V Tj = 125C, Inductive load Eon 1000 800 Eoff 600 400 Erec 200 SWITCHING ENERGIES (mJ/pulse) 1400 5 7 100 2 3 2000 Eon 1600 1200 Eoff 800 400 Erec 0 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT (A) 0 0 4 8 12 16 20 GATE RESISTANCE () HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HC-34H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 101 7 5 102 VCC = 850V, VGE = 15V RG(on) = RG(off) = 2 Tj = 125C, Inductive load REVERSE RECOVERY TIME (s) td(off) 100 7 5 td(on) 3 tf 2 10-1 7 5 tr 3 2 2 101 3 2 2 100 2 3 5 7 103 2 3 7 5 trr 3 2 10-1 1 10 5 7 104 2 3 5 7 102 2 3 5 7 103 101 2 3 5 7 104 COLLECTOR CURRENT (A) EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1.2 1.0 102 7 5 2 5 7 102 7 5 lrr 3 2 2 3 103 7 5 3 10-2 1 10 7 5 3 3 3000 Single Pulse, TC = 25C Rth(j-c)Q = 12K/kW Rth(j-c)R = 20K/kW 0.8 0.6 0.4 VCC 1150V, VGE = +/-15V Tj = 125C, RG(off) 2 2500 COLLECTOR CURRENT (A) SWITCHING TIMES (s) 2 104 VCC = 850V, VGE = 15V RG(on) = RG(off) = 2 Tj = 125C, Inductive load 7 5 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 2000 1500 1000 500 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) 0 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005