BSM 15 GD 120 D2 IGBT Power Module * Power module * 3-phase full-bridge * Including fast free-wheel diodes * Package with insulated metal base plate Type VCE IC BSM 15 GD 120 D2 1200V 25A Package Ordering Code SIXPACK 1 C67076-A2504-A17 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 25 TC = 80 C 15 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 50 TC = 80 C 30 Ptot Power dissipation per IGBT TC = 25 C W 145 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC 0.86 Diode thermal resistance, chip case RthJCD 1.5 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 http://store.iiic.cc/ + 150 C -55 ... + 150 K/W sec 55 / 150 / 56 Feb-10-1997 BSM 15 GD 120 D2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.6 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 15 A, Tj = 25 C - 2.5 3 VGE = 15 V, IC = 15 A, Tj = 125 C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES mA VCE = 1200 V, VGE = 0 V, Tj = 25 C - 0.3 0.5 VCE = 1200 V, VGE = 0 V, Tj = 125 C - 1.2 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 150 AC Characteristics Transconductance gfs VCE = 20 V, IC = 15 A Input capacitance 5.5 pF - 1000 - - 150 - - 70 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 http://store.iiic.cc/ Feb-10-1997 BSM 15 GD 120 D2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82 Rise time - 55 110 tr nS VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82 Turn-off delay time - 45 90 td(off) ns VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Fall time - 400 600 - 70 100 tf VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Free-Wheel Diode Diode forward voltage VF V IF = 15 A, VGE = 0 V, Tj = 25 C - 2.4 2.9 IF = 15 A, VGE = 0 V, Tj = 125 C - 1.9 - Reverse recovery time trr s IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s, Tj = 125 C Reverse recovery charge - 0.1 - Qrr C IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C - 1 - Tj = 125 C - 3 - Semiconductor Group 3 http://store.iiic.cc/ Feb-10-1997 BSM 15 GD 120 D2 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 150 tp = 11.0s W 130 Ptot A IC 120 110 10 1 100 100 s 90 80 70 60 10 0 50 1 ms 40 30 10 ms 20 10 0 0 20 40 60 80 100 120 C 10 -1 0 10 160 10 1 10 DC 3 10 2 TC V VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 26 A K/W 22 IC ZthJC 20 18 10 -1 16 14 D = 0.50 12 0.20 10 10 -2 0.10 8 0.05 6 0.02 single pulse 0.01 4 2 0 0 20 40 60 80 100 120 C 160 10 -3 -5 10 TC Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 http://store.iiic.cc/ Feb-10-1997 BSM 15 GD 120 D2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 30 30 A A 26 IC 24 22 20 26 17V 15V 13V 11V 9V 7V IC 24 22 20 18 18 16 16 14 14 12 12 10 10 8 8 6 6 4 4 2 0 0 2 0 0 1 2 3 V 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 30 A 26 IC 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 http://store.iiic.cc/ Feb-10-1997 BSM 15 GD 120 D2 Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 15 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 20 V nF VGE 16 C 600 V 14 800 V 10 0 Ciss 12 10 8 Coss 10 -1 6 Crss 4 2 0 0 10 20 30 40 50 60 70 80 10 -2 0 nC 100 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 VCE 6 http://store.iiic.cc/ 0 200 400 600 800 1000 1200 V 1600 VCE Feb-10-1997 BSM 15 GD 120 D2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 82 par.: VCE = 600 V, VGE = 15 V, IC = 15 A 10 3 t 10 3 tdoff ns t tdoff ns tdon 10 2 tr 10 2 tr tdon tf 10 1 0 5 10 15 20 25 30 tf A IC 10 1 0 40 50 100 150 200 300 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 82 par.: VCE = 600V, VGE = 15 V, IC = 15 A E 10 10 mWs mWs 8 E 7 8 7 Eon 6 6 5 5 4 4 3 3 Eoff 2 2 1 1 0 0 5 10 Semiconductor Group 15 20 25 30 Eon A IC 40 7 http://store.iiic.cc/ 0 0 Eoff 50 100 150 200 300 RG Feb-10-1997 BSM 15 GD 120 D2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = (tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj Diode 10 1 30 A K/W 26 IF 24 ZthJC 10 0 22 20 10 -1 18 Tj=125C 16 Tj=25C D = 0.50 14 10 -2 12 0.20 0.10 10 0.05 8 10 6 -3 single pulse 0.02 0.01 4 2 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 -5 10 Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp VF 8 http://store.iiic.cc/ Feb-10-1997 BSM 15 GD 120 D2 Circuit Diagram Package Outlines Dimensions in mm Weight: 190 g Semiconductor Group 9 http://store.iiic.cc/ Feb-10-1997