KST-B015-001 1
STB772
PNP Silicon Transistor
Description
• Suitable for low voltage large current drivers
• Excellent hFE Linearity
• Complementary pair with STD882
• Switching Application
Ordering Information
Type NO. Marking Package Code
STB772 STB772 MPT
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
PIN Connections
1. Emitter
2. Collector
3. Base
2.5±0.1.
1
6.5±0.2
1.2 Max.
5.0±0.2
3.4±0.2
21.5±1.0
2.0±0.1
0.5±0.2
1.1±0.1
8.5±0.2
12.5 Min.
0.4~0.6
0.70 Max.
23
KST-B015-001 2
STB772
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO -15 V
Collector-Emitter voltage VCEO -12 V
Emitter-Base voltage VEBO -5 V
Collector current IC-5 A
Collector dissipation PC1.2 W
Junction temperature Tj150 °C
Storage temperature Tstg -55~150 °C
* : When mounted on 40×40×0.8mm ceramic substate
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -15 - - V
Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V
Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -5 - - V
Collector cut-off current ICBO VCB=-12V, IE=0 - - -1 µA
Emitter cut-off current IEBO VEB=-5V, IC=0 - - -1 µA
hFE1 VCE=-2V, IC=-500mA 160 - 320 -
DC current gain hFE2 VCE=-2V, IC=-3A 40 - - -
Collector-Emitter on voltage VCE(sat1) IC=-3A, IB=-150mA - - -0.5 V
Base-Emitter on voltage VBE(sat) IC=-3A, IB=-150mA - - -1.2 V
Transition frequency fTVCB=-5V, IC=-500mA - 150 - MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - - 50 pF
KST-B015-001 3
STB772
Electrical Characteristic Curves
Fig. 4 VCE
(
sat
)
- IC
Fig. 1 Pc - Ta Fig. 2 Ic - VBE
Fig. 4 VCE
(
sat
)
- IC
Fig. 3 hFE - IC
