© by SEMIKRON B 5 – 19
SEMITRANS
®
M
Power MOSFET Modules
SKM 151 F
Features
•N Channel, enhancement mode
•Fast inverse diode
•Short internal connections
avoid oscillations
•Switching kW’s in less than 1 µs
•Isolated copper baseplate
•All electrical connections on top
for easy busbaring
•Large clearances and creepage
distances
•UL recognized, file no. E 63 532
Typical Applications
•Switched mode power supplies
•DC servo and robot drives
•DC choppers
•Resonant and welding inverters
•Induction heaters
•AC motor drives
•Laser power supplies
•UPS equipment
•Plasma cutting
•Not suitable for linear
amplification
This is an electrostatic dischar-
ge sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Absolute Maximum Ratings
Symbol Conditions
1)
Values Units
V
DS
500 V
V
DGR
R
GS
= 20 kΩ500 V
I
D
56 A
I
DM
224 A
V
GS
± 20 V
P
D
700 W
T
j
, T
stg
– 55 . . .+150 °C
V
isol
AC, 1 min 2 500 V
humidity DIN 40 040 Class F
climate DIN IEC 68 T.1 55/150/56
Inverse Diode
I
F
= – I
D
56 A
I
FM
= – I
DM
224 A
Characteristics
Symbol Conditions
1)
min. typ. max. Units
V
(BR)DSS
V
GS
= 0, I
D
= 0,25 mA 500 – – V
V
GS(th)
V
GS
= V
DS
, I
D
= 1 mA 2,1 3,0 4,0 V
I
DSS
V
GS
= 0, T
j
= 25 °C – 50 250 µA
V
DS
= 500 V T
j
= 125 °C – 300 1000 µA
I
GSS
V
GS
= 20 V, V
DS
= 0 – 10 100 nA
R
DS(on)
V
GS
= 10 V, I
D
= 36 A – 90 110 mΩ
g
fs
V
DS
= 25 V, I
D
= 36 A 20 30 – S
C
CHC
– – 160 pF
C
iss
V
GS
= 0 – 22 30 nF
C
oss
V
DS
= 25 V – 1,6 2,4 nF
C
rss
f = 1 MHz – 0,6 1 nF
L
DS
– – 20 nH
t
d(on)
V
DD
= 250 V – 60 – ns
t
r
I
D
= 36 A – 35 – ns
t
d(off)
V
GS
= 10 V – 350 – ns
t
f
R
GS
= 3,3 Ω–70– ns
Inverse Diode
V
SD
I
F
= 110 A, V
GS
= 0 – 1,3 1,6 V
t
rr
T
j
= 25 °C
2)
– 200 280 ns
T
j
= 150 °C
2)
– 350 500 ns
Q
rr
T
j
= 25/150 °C
2)
– 1,5/8,5 2,5/12 µC
I
RRM
T
j
= 25/150 °C
2)
– 12/28 – A
Thermal Characteristics
R
thjc
– – 0,18 °C/W
R
thch
M
1
, surface 10 µm – – 0,05 °C/W
Mechanical Data
M
1
to heatsink, SI Units 4 – 6 Nm
to heatsink, US Units 35 – 53 lb.in.
M
2
for terminals, SI Units 2,5 – 3,5 Nm
for terminals, US Units 22 – 2 4 lb.in.
a – – 5x9,81 m/s
2
w – – 150 g
Case → page B 5 – 2 D 15
1)
T
case
= 25 °C, unless otherwise specified
.
2)
I
F
= – I
D,
V
R
= 100 V, – di
F
/dt = 100 A/µs
SEMITRANS M1
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© by SEMIKRON B 5 – 21
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© by SEMIKRONB 5 – 22 0896
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