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VCES = 1700 V
IC25 =42A
VCE(sat) = 6.0 V
tfi =50 ns
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
GCE
TO-247 AD (IXBH)
Features
zHigh Blocking Voltage
zJEDEC TO-268 surface and
JEDEC TO-247 AD
zFast switching
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
zMolding epoxies meet UL 94 V-0
flammability classification
Applications
zAC motor speed control
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
zSubstitutes for high voltage MOSFETs
Advantages
zLower conduction losses than MOSFETs
zHigh power density
zSuitable for surface mounting
zEasy to mount with 1 screw,
(isolated mounting screw hole)
DS98939(7/02)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 μA, VGE = 0 V 1700 V
VGE(th) IC= 750 μA, VCE = VGE 2.5 5.5 V
ICES VCE = 0.8 VCES TJ = 25°C50μA
VGE = 0 V TJ = 125°C 1.5 mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V 4.5 6.0 V
TJ = 125°C 5.0 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1700 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1700 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C42A
IC90 TC= 90°C21A
ICM TC= 25°C, 1 ms 1 20 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 ΩICM =90 A
(RBSOA) Clamped inductive load VCES = 1350 V
TSC VGE = 15 V, VCES = 1200V, TJ = 125°C
(SCSOA) RG = 10 Ω non repetitive 10 μs
PCTC= 25°C 350 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum Lead temperature for soldering 350 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 2 60 °C
MdMounting torque (M3) 1.13/10Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
TO-268 (IXBT)
(TAB)
G
E
BIMOSFETTM Monolithic
Bipolar MOS Transistor IXBH 42N170A
IXBT 42N170A
Advance Technical Information
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 AD Outline
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 15 24 S
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
Cies 3700 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 170 pF
Cres 45 pF
Qg155 nC
Qge IC= IC90, VGE = 15 V, VCE = 0.5 VCES 30 nC
Qgc 55 nC
td(on) 25 ns
tri 35 ns
td(off) 230 ns
tfi 50 ns
Eoff 2.8 mJ
td(on) 25 ns
tri 38 ns
Eon 5.0 mJ
td(off) 300 ns
tfi 120 ns
Eoff 6mJ
RthJC 0.35 K/W
RthCK (TO-247) 0.25 K/W
Reverse Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF= IC90, VGE = 0 V, Pulse test, 5.0 V
t< 300 us, duty cycle d < 2%
IRM IF= 25A, VGE = 0 V, -diF/dt = 50 A/us 15 A
trr vR= 100V 330 ns
Inductive load, TJ = 125°°
°°
°C
IC= IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 1.0 Ω
Inductive load, TJ = 25°°
°°
°C
IC= IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 1.0 Ω
Min Recommended Footprint
TO-268 Outline
IXBH 42N170A
IXBT 42N170A
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