PNP SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 1 JUNE 94
FEATURES
* 60 Volt VCEO
* Gain of 10k at IC=100mA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -10 V
Continuous Collector Current IC-500 mA
Power Dissipation at Tamb
=25°C Ptot 625 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -60 V IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -60 V IC=-100µA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -10 V IE=-10µA, IC=0
Collector Cut-Off
Current
ICBO -100 nA VCB
=-50V, IE=0
Collector Cut-Off
Current
ICES -500 nA VCE
=-50V
Emitter Cut-Off
Current
IEBO -100 nA VEB
=-10V, IC=0
Collector-Emitter
On Voltage
VCE(sat) -1.5 V IC=-100mA, IB=-0.1mA*
Base-Emitter
Saturation Voltage
VBE(on) -2 V IC=-100mA, VCE=-5V*
Static Forward Current
Transfer Ratio
hFE 10k
10k
IC=-10mA, VCE
=-5V*
IC=-100mA, VCE=5V*
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
E-Line
TO92 Compatible
MPSA77P
3-83
C
B
E
