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TK36
www.dynexsemi.com
FEATURES
■High Surge Capability
APPLICATIONS
■High Power Drives
■High Voltage Power Supplies
■DC Motor Control
■Welding
■Battery Chargers
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-
Add K to type number for 3/4" 16 UNF thread, e.g. TK36 12K.
or
Add M to type number for M16 thread, e.g. TK36 12M.
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
VDRM 1200V
IT(AV) 245A
ITSM 5500A
dVdt* 200V/µs
dI/dt 500A/µs
*Higher dV/dt selections available
TK36
Phase Control Thyristor
Advance Information
Replaces January 2000 version, DS4255-4.0 DS4255-5.0 July 2001
TK36 12 M or K
TK36 10 M or K
TK36 08 M or K
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 100mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
Type Number Repetitive Peak
Voltages
VDRM VRRM
V
1200
1000
800
Fig. 1 Package outline
Outline type code: TO93.
See Package Details for further information.
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TK36
SURGE RATINGS
Conditions
10ms half sine; Tcase = 125oC
VR = 50% VRRM - 1/4 sine
10ms half sine; Tcase = 125oC
VR = 0
Max. Units
Symbol Parameter
ITSM Surge (non-repetitive) on-state current
I2tI
2t for fusing
ITSM Surge (non-repetitive) on-state current
I2tI2t for fusing 151.25 x 103A2s
5.5 kA
96.8 x 103A2s
4.4 kA
THERMAL AND MECHANICAL DATA
Conditions Min. Max. Units
Symbol Parameter
- 0.13 oC/W
Thermal resistance - junction to caseRth(j-c)
Mounting torque 35.0Nm
with mounting compound 0.06-oC/W
Thermal resistance - case to heatsinkRth(c-h)
Tvj Virtual junction temperature On-state (conducting) - 125 oC
dc
Tcase = 80˚C unless stated otherwise.
Symbol Parameter Conditions UnitsMax.
IT(AV) Mean on-state current
IT(RMS) RMS value
ITContinuous (direct) on-state current
Half wave resistive load 245 A
- 385 A
- 315 A
125 oC
Tstg Storage temperature range
Reverse (blocking)
-Mounting torque 30.0 35.0 Nm
-40 150 oC
-
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Symbol Parameter Conditions UnitsMax.
IT(AV) Mean on-state current
IT(RMS) RMS value
ITContinuous (direct) on-state current
Half wave resistive load 323 A
- 507 A
- 425 A
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TK36
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DYNAMIC CHARACTERISTICS
VTM
ParameterSymbol Conditions
Maximum on-state voltage At 600A peak, Tcase = 25oC
IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC
Gate source 20V, 20Ω
tr ≤ 0.5µs, Tj = 125˚C
dV/dt Maximum linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC, Gate open circuit
Min. Max. Units
- 1.3 V
-25mA
- 200 V/µs
Repetitive 50Hz - 500 A/µs
Non-repetitive - 800 A/µs
Rate of rise of on-state current
dI/dt
VT(TO) Threshold voltage At Tvj = 125oC
rTOn-state slope resistance At Tvj = 125oC
tgd Delay time
ILLatching current Tj = 25oC, VD = 12V
IHHolding current Tj = 25oC, VD = 12V, ITM = 1A
0.88-V
- 0.7 mΩ
- 1.5 µs
VD = 300V, IG = 1A, IT = 50A, dI/dt = 50A/µs,
dIG/dt = 1A/µs, Tj = 25oC
--mA
-50mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
VDRM = 12V, Tcase = 25oC, RL = 6Ω
ConditionsParameterSymbol
VGT Gate trigger voltage VDRM = 12V, Tcase = 25oC, RL = 6Ω
IGT Gate trigger current
VGD Gate non-trigger voltage At VDRM Tcase = 125oC, RL = 1kΩ
VFGM Peak forward gate voltage Anode positive with respect to cathode
VFGN Peak forward gate voltage Anode negative with respect to cathode
VRGM Peak reverse gate voltage
IFGM Peak forward gate current Anode positive with respect to cathode
PGM Peak gate power -
PG(AV) Mean gate power
- 3.0 V
- 200 mA
- 0.2 V
-30V
- 0.25 V
-5V
-4A
-16W
-3W
Typ. Max. Units
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TK36
CURVES SINUSOIDAL CURRENT WAVEFORM
RECTANGULAR CURRENT WAVEFORM
Fig.3 Maximum on-state power dissipation for sinusoidal
current waveform
Fig.2 Maximum (limit) on-state characteristics
Fig.4 Maximum allowable case temperature for sinusoidal
current waveform
Instantaneous on-state current, I
T
- (A)
0 2.0 4.0 6.0
Instantaneous on-state voltage, VT - (V)
0
1000
2000
3000
4000
5000 Measured under pulse conditions
Tj = 125˚C
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Fig.5 Maximum on-state power dissipation for rectangular
current waveform Fig.6 Maximum allowable case temperature for rectangular
current waveform
Fig.7 Gate trigger characteristics Fig.8 Transient thermal impedance - junction to case
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TK36
Fig.9 Multiplying factor for non-repetive sub-cycle surge on-
state current and I2t rating Fig.10 Multiplying factor for non-repetive surge
on-state current
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TK36
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PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
230 ± 10
8 min
35 max
12.3 min
Ø9 ± 0.5
230 ± 10
Ø4
18 ± 2
K = 27.0 ± 0.5
M = 18.0 ± 0.5
M = M16 x 2A
K = 3/4" 16 UNF
Hex. 32AF
Nominal weight: 290g
Mounting torque: 35Nm ±10%
Gate lead colour: White
Cathode lead colour: Red
Package outine type code: TO93
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TK36
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4255-5 Issue No. 5.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
