PD-9.540B IRFP254 International Rectifier HEXFET Power MOSFET @ Dynamic dv/dt Rating Repetitive Avalanche Rated D |solated Central Mounting Hole Fast Switching Ease of Paralleling @ Simple Drive Requirements Voss = 250V Rogvon) = 0.140 5 lp = 23A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247AC Absolute Maximum Ratings Parameter Max. Units Ip @ Te = 25C Continuous Drain Current, Vas @ 10 V 23 Ip @ To = 100C | Continuous Drain Current, Vas @ 10 V 15 A Ibm Puised Drain Current 92 Pp @ Tc = 25C __| Power Dissipation 190 WwW Linear Derating Factor 1.5 wre Vas Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy 410 mJ lan : Avalanche Current 23 A Ear Repetitive Avalanche Energy 19 mJ dv/dt Peak Diode Recovery dv/dt 48 Vins Ts Operating Junction and -55 to +150 TsTa Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 Ibfein (1.1 Nem) Thermal Resistance Parameter Min. Typ. Max. Units Rac Junction-to-Case _ _ 0.65 Recs Case-to-Sink, Flat, Greased Surface _ 0.24 _ C/W Roya Junction-to-Ambient _ _ 40 971IRFP254 Electrical Characteristics @ Tj = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Visr)pss Drain-to-Source Breakdown Voltage 250 _ _ Vj Ves=0V, Ip= 250A AV erypss/ATy| Breakdown Voltage Temp. Coefficient | 039 | | VPC | Reference to 25C, Ip= 1mA Rosvon) Static Drain-to-Source On-Resistance _ | 0.14 Q | Ves=10V, ln=14A Vesith) Gate Threshold Voltage 2.0 _ 4.0 V__ | Vos=Ves, Io= 250uA Ots Forward Transconductance VW _ _ S| Vps=50V, Ip=14A loss Drain-to-Source Leakage Current 2 HA Voe=250V, Ves-0V _ _ 250 Vps=200V, Ves=0V, Ty=125C less Gate-to-Source Forward Leakage _ 100 nA Vaes=20V Gate-to-Source Reverse Leakage _ | -100 Vas=-20V Qg Total Gate Charge = _ 140 Ip=23A Qgs Gate-to-Source Charge _ | 24 | nC | Vps=200V Qed Gate-to-Drain ("Miller") Charge _ _ 71 Vas=10V See Fig. 6 and 13 ta(on) Turn-On Delay Time _ 15 _ Vop=125V tr Rise Time _ 63 _ ns Ip=23A tatotfy Turn-Off Delay Time 74 Re=6.22 t Fall Time _ 50 _ Rp=5.40 See Figure 10 Lo Internal Drain Inductance | 50 _ eo oe ) i nH | from package (re Ls Internal Source Inductance 13 and center of die contact 8 Ciss Input Capacitance | 2700} Ves=0V Coss Output Capacitance | 620 | pF | Vpg= 25V Crss Reverse Transfer Capacitance _ 180 _ f=1,.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ _ 24 MOSFET symbol D (Body Diode) A showing the Ism Pulsed Source Current _ _ 92 integral reverse = @ (Body Diode) p-n junction diode. s Vsp Diode Forward Voltage _ _ 1.8 Vo | Ty=25C, Is=23A, Ves=0V br Reverse Recovery Time | 370 | 560 | ns | Ty=25C, IF=23A Qrr Reverse Recovery Charge _ 46 | 69 wC | difdt=100A/us @ ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp} Notes: Repetitive rating; pulse width limited by Isps23A, di/dt<180A/us, Vop<V(BR)Dss, max. junction temperature (See Figure 11) Tys150C Vpp=50V, starting Ty=25C, L=1.2mH Pulse width < 300 ps; duty cycle <2%. Re=250, las=23A (See Figure 12) 972Ip, Drain Current (Amps) Ip, Drain Current (Amps) 10 104 4.5V 20us PULSE WIDTH To = 25C 10 10 40 Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25C Vpg = 50V 20us PULSE WIDTH 4 9 10 Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics IRFP254 10! Ip, Drain Current (Amps) 20us PULSE WIDTH Te = 150C 409 100 101 Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=150C (Normalized) Rosyon), Drain-to-Source On Resistance VGS = 10V 0.0 -60 -40 -20 06 20 40 60 80 100 120 140 160 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 973IRFP254 6000 f = 4MHz Cgg + Cgg. Cas ga 4800/- Cds + 3600 2400 Capacitance (pF) 1200 Veg. Gate-to-Source Voltage (volts) SEE FIGURE 13 400 494 20 AQ 60 80 109 20 140 Vps, Drain-to-Source Voltage (volts) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 103 ~ OPERATION IN THIS AREA LIMITEO Q 5 BY Ros (ON) & = = ga Cc <x 102 3 z oO 5 5 wD 3 a Oo 2 Cc 2 10 a 3 a 5 fe as a z= = ~ 2)t j= 150C Ves = OV INGLE PULSE 105 1. . 2.0 2.5 1 2 5 40 2 5 102 2 5 103 Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 974Ip, Drain Current (Amps) 26 Fig 9. 50 Tc, Case Temperature (C) tafon) tr taco) tf Maximum Drain Current Vs. IRFP254 Ro i =" Vop Pulse Width < fps Duty Factor < 0.1% t ! 75 100 125 150 Ves _/ KA \ Fig 10b. Switching Time Waveforms Case Temperature Thermal Response (Zajc) =~ SINGLE PULSE (THERMAL RESPONSE) e F POM J+ t to] tel NOTES: 4. DUTY FACTOR, D=t1/t2 2. PEAK Ty=Pom x Zthyc + Te 107 108 104 108 10? 0.1 1 410 t;, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 975IRFP254 Vary tp to obtain required las Vps-__ / lag Vos > ee ee ee Fig 12b. Unclamped Inductive Waveforms 10V Va Charge + Fig 13a. Basic Gate Charge Waveform Eas, Single Pulse Energy (mJ) 1000 Ip TOP 410A 154 BOTTOM 23A B00 600 400 200 Dp = 50V 25 50 75 100 125 150 Starting Ty, Junction Temperature(C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Ig Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit See page 1505 Appendix B: Package Outline Mechanical Drawing See page 1511 Appendix C: Part Marking Information See page 1517 International Rectifier