
4
Absolute Maximum Ratings
Storage Temperature, TS –55˚C to +150˚C
Operating Temperature, TA –55˚C to +100˚C
Lead Solder Temperature, max.
(1.6 mm below seating plane)
260˚C for 10 s
Average Forward Current, IF 80 mA
Reverse Input Voltage, VR 6 V
Input Power Dissipation, PI 150 mW
Collector Current, IC 100 mA
Collector-Emitter Voltage, VCEO 30 V
Emitter-Collector Voltage, VECO 7 V
Collector-Base Voltage, VCBO 70 V
Collector Power Dissipation 150 mW
Total Power Dissipation 250 mW
Isolation Voltage, Viso
(AC for 1 minute, R.H. = 40 ~ 60%)
2500 Vrms
Solder Reow Temperature Prole
1. One-time soldering reow is recommended with-
in the condition of temperature and time prole
shown at right.
2. When using another soldering method such as in-
frared ray lamp, the temperature may rise partially
in the mold of the device. Keep the temperature on
the package of the device within the condition of (1)
above.
Note: Non-halide ux should be used.
30 seconds
60 ~ 150 sec 90 sec 60 sec
60 sec
25C
150C
200C
250C 260C (Peak Temperature)
217C
Time (sec)
Temperature (C)
* CTR = x 100%
IC
IF
Electrical Specications (TA = 25˚C)
Parameter Symbol Min. Typ. Max. Units Test Conditions
Forward Voltage VF– 1.2 1.5 V IF = 10 mA
Reverse Current IR– – 10 µA VR = 4 V
Terminal Capacitance Ct– 50 – pF V = 0, f = 1 KHz
Collector Dark Current ICEO – – 50 nA VCE = 10 V, IF = 0
Collector-Emitter Breakdown Voltage BVCEO 30 – – V IC = 0.1 mA, IF = 0
Emitter-Collector Breakdown Voltage BVECO 7 – – V IE = 10 µA, IF = 0
Collector-Base Breakdown Voltage BVCBO 70 – – V IC = 0.1 mA, IF = 0
Collector Current IC2 – – mA IF = 10 mA
*Current Transfer Ratio CTR 20 – – % VCE = 10 V
Collector-Emitter Saturation Voltage VCE(sat) – 0.1 0.5 V IF = 50 mA, IC = 2 mA
Response Time (Rise) tr– 3 – µs VCE = 10 V, IC = 2 mA
Response Time (Fall) tf– 3 – µs RL = 100 Ω
Isolation Resistance Riso 5 x 1010 1 x 1011 – Ω DC 500 V 40 ~ 60%
R.H.
Floating Capacitance Cf– 1 – pF V = 0, f = 1 MHz