Vishay Siliconix
Si1869DH
Document Number: 73449
S10-0792-Rev. C, 05-Apr-10
www.vishay.com
1
Load Switch with Level-Shift
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs: 1.8 V Rated
• ESD Protected: 2000 V On Input Switch,
VON/OFF
• 165 mΩ Low RDS(on)
• 1.8 to 20 V Input
• 1.5 to 8 V Logic Level Control
• Low Profile, Small Footprint SC70-6 Package
• Adjustable Slew-Rate
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Level Shift for Portable Devices
DESCRIPTION
The Si1869DH includes a p- and n-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1869DH operates on
supply lines from 1.8 V to 20 V, and can drive loads up to
1.2 A.
PRODUCT SUMMARY
VDS2 (V) RDS(on) (Ω)I
D (A)
1.8 to 20
0.165 at VIN = 4.5 V ± 1.2
0.222 at VIN = 2.5 V ± 1.0
0.303 at VIN = 1.8 V ± 0.7
APPLICATION CIRCUITS
VOUT
GND
LOAD
VIN
ON/OFF
R2
R2
1
2, 3
C1
6
4
6
5
R1
Q1
Q2
Si1869DH
Co
Ci
Switching Variation
R2 at VIN = 2.5 V, R1 = 20 kΩ
0
5
10
15
20
25
30
35
40
0246810
R2 (kΩ)
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
trtd(on)
td(off)
tf
(Time µs)
Note: For R2 switching variations with other VIN/R1
combinations see Typical Characteristics
* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
The Si1869DH is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
COMPONENTS
R1 Pull-Up Resistor Typical 10 kΩ to 1 MΩ*
R2 Optional Slew-Rate Control Typical 0 to 100 kΩ*
C1 Optional Slew-Rate Control Typical 1000 pF
www.vishay.com
2
Document Number: 73449
S10-0792-Rev. C, 05-Apr-10
Vishay Siliconix
Si1869DH
FUNCTIONAL BLOCK DIAGRAM
Notes:
a. Surface mounted on FR4 board.
b. VIN = 20 V, VON/OFF = 8 V, TA = 25 °C.
c. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Marking Code
VC XX
Lot T raceability
and Date Code
Part # Code
YY
SC
70-6
Top View
6
4
1
2
3
5
S2
ON/OFF
R1, C1
D2
D2
R2
Ordering Information: Si1869DH-T1-E3 (Lead (Pb)-free)
Si1869DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
D2
S2
ON/OFF
R2 1
4
6
5Q1
Q2
Si1869DH
R1,
C1
2, 3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage (D2-S2) VDS - 20
VInput Voltage VIN 20
ON/OFF Voltage VON/OFF 8
Load Current Continuousa, b
IL
± 1.2
APulsedb, c ± 3
Continuous Intrinsic Diode ConductionaIS- 0.4
Maximum Power DissipationaPD1.0 W
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω)ESD 2kV
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (Continuous Current)aRthJA 100 125 °C/W
Maximum Junction-to-Foot (Q2) RthJF 44 55
SPECIFICATIONS TJ = 25 °C unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
OFF Characteristics
Reverse Leakage Current IFL VIN = 8 V, VON/OFF = 0 V 1 µA
Diode Forward Voltage VSD IS = - 0.4 A 0.4 0.6 1.1 V
ON Characteristics
Input Voltage Range VIN 1.8 20 V
Drain to Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA- 20
On-Resistance (P-Channel) at 1 A RDS(on)
VON/OFF = 1.5 V, VIN = 4.5 V, ID = 1.2 A 0.132 0.165
ΩVON/OFF = 1.5 V, VIN = 2.5 V, ID = 1.0 A 0.177 0.222
VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.7 A 0.242 0.303
On-State (P-Channel) Drain-Current ID(on)
VIN-OUT ≤ 0.2 V, VIN = 5 V, VON/OFF = 1.5 V 1 A
VIN-OUT ≤ 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 1
Document Number: 73449
S10-0792-Rev. C, 05-Apr-10
www.vishay.com
3
Vishay Siliconix
Si1869DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VDROP vs. IL at VIN = 4.5 V
VDROP vs. IL at VIN = 1.8 V
VDROP Variance vs. Junction Temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0 0.5 1.0 1.5 2.0 2.5 3.0
IL (A)
(V)VDROP
VON/OFF = 1.5 V to 8 V
TJ = 125 °C
TJ = 25 °C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0 0.2 0.4 0.6 0.81.0 1.2 1.4 1.6
IL (A)
(V)VDROP
VON/OFF = 1.5 V to 8 V
TJ = 125 °C
TJ = 25 °C
- 0.10
- 0.06
- 0.02
0.02
0.06
0.10
- 50 - 25 0 25 50 75 100 125 150
TJ- Junction Temperature (°C)
Variance (V)
VDROP
IL = 0.7 A
VON/OFF = 1.5 V to 8 V
VIN = 4.5 V
VIN = 1.8 V
VDROP vs. IL at VIN = 2.5 V
VDROP vs. VIN at IL = 0.7 A
On-Resistance vs. Input Voltage
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0 0.5 1.0 1.5 2.0 2.5
IL (A)
(V)VDROP
VON/OFF = 1.5 V to 8 V
TJ = 125 °C
TJ = 25 °C
0.0
0.1
0.2
0.3
0.4
0.5
0123456
VIN (V)
(V)VDROP
VON/OFF = 1.5 V to 8 V
TJ = 125 °C
TJ = 25 °C
0.0
0.1
0.2
0.3
0.4
0.5
0123456
- On-Resistance (Ω)
RSS(on)
VIN (V)
IL = 0.7 A
VON/OFF = 1.5 V to 8 V
TJ = 125 °C
TJ = 25 °C
www.vishay.com
4
Document Number: 73449
S10-0792-Rev. C, 05-Apr-10
Vishay Siliconix
Si1869DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized On-Resistance
vs. Junction Temperature
Switching Variation
R2 at VIN = 2.5 V, R1 = 20 kΩ
Switching Variation
R2 at VIN = 4.5 V, R1 = 300 kΩ
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
TJ- Junction Temperature (°C)
IL = 0.7 A
VON/OFF = 1.5 V to 8 V
VIN = 1.8 V
VIN = 4.5 V
RDS(on) - On-Resistance
(Normalized)
0
5
10
15
20
25
30
35
40
0246810
R2 (kΩ)
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
(
Time µs)
trtd(on)
td(off)
tf
0
50
100
150
200
250
0 20406080 100
R2 (kΩ)
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
(Time µs)
td(on)
tr
td(off)
tf
Switching Variation
R2 at VIN = 4.5 V, R1 = 20 kΩ
Switching Variation
R2 at VIN = 1.8 V, R1 = 20 kΩ
Switching Variation
R2 at VIN = 2.5 V, R1 = 300 kΩ
R2 (kΩ)
(Time
tr
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
tf
td(on)
td(off)
µs)
0
4
8
12
16
20
0246810
0
20
40
60
80
100
0246810
R2 (kΩ)
(Time µs)
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
td(on)
tr
tf
td(off)
0
50
100
150
200
0 20406080 100
R2 (kΩ)
(Time µs)
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
tf
td(off)
tr
td(on)
Document Number: 73449
S10-0792-Rev. C, 05-Apr-10
www.vishay.com
5
Vishay Siliconix
Si1869DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73449.
Switching Variation
R2 at VIN = 1.8 V, R1 = 300 kΩ
0
50
100
150
200
020406080100
R2 (kΩ)
(Time µs)
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
tf
td(off)
tr
td(on)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 00601110-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 100 °C/W
3. TJM - T
A = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3 10-2 01110-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
