Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 (V) 1.8 to 20 RDS(on) () ID (A) 0.165 at VIN = 4.5 V 1.2 0.222 at VIN = 2.5 V 1.0 0.303 at VIN = 1.8 V 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a single SC70-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si1869DH operates on supply lines from 1.8 V to 20 V, and can drive loads up to 1.2 A. * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFETs: 1.8 V Rated * ESD Protected: 2000 V On Input Switch, VON/OFF * 165 m Low RDS(on) * 1.8 to 20 V Input * 1.5 to 8 V Logic Level Control * Low Profile, Small Footprint SC70-6 Package * Adjustable Slew-Rate * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * Level Shift for Portable Devices APPLICATION CIRCUITS 40 Si1869DH tf 35 2, 3 4 IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F 30 VOUT VIN Q2 25 C1 6 Time (s) R1 6 20 td(off) 15 5 ON/OFF Co LOAD 10 Q1 5 tr td(on) 0 Ci 0 1 2 4 6 8 10 R2 (k) R2 GND R2 Note: For R2 switching variations with other VIN/R1 combinations see Typical Characteristics Switching Variation R2 at VIN = 2.5 V, R1 = 20 k COMPONENTS R1 Pull-Up Resistor Typical 10 k to 1 M* R2 Optional Slew-Rate Control Typical 0 to 100 k* C1 Optional Slew-Rate Control Typical 1000 pF The Si1869DH is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. * Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 73449 S10-0792-Rev. C, 05-Apr-10 www.vishay.com 1 Si1869DH Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM SC70-6 Si1869DH Top View 4 2, 3 D2 S2 R2 1 6 Q2 R1, C1 6 2 5 ON/OFF VC D2 3 4 R1, C1 XX YY D2 Marking Code 5 Lot Traceability and Date Code S2 Q1 ON/OFF Part # Code Ordering Information: Si1869DH-T1-E3 (Lead (Pb)-free) Si1869DH-T1-GE3 (Lead (Pb)-free and Halogen-free) R2 1 ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage (D2-S2) VDS - 20 Input Voltage VIN 20 ON/OFF Voltage Load Current 1.2 IL Pulsedb, c V 8 VON/OFF Continuousa, b Unit 3 A Continuous Intrinsic Diode Conductiona IS - 0.4 Maximum Power Dissipationa PD 1.0 TJ, Tstg - 55 to 150 C ESD 2 kV Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 ) W THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambient (Continuous Current)a RthJA 100 125 Maximum Junction-to-Foot (Q2) RthJF 44 55 Unit C/W SPECIFICATIONS TJ = 25 C unless otherwise noted Parameter Symbol Test Conditions Reverse Leakage Current IFL VIN = 8 V, VON/OFF = 0 V Diode Forward Voltage VSD IS = - 0.4 A Min. Typ. Max. Unit 1 A 0.4 0.6 1.1 V OFF Characteristics ON Characteristics 1.8 20 Input Voltage Range VIN Drain to Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 A VON/OFF = 1.5 V, VIN = 4.5 V, ID = 1.2 A 0.132 0.165 RDS(on) VON/OFF = 1.5 V, VIN = 2.5 V, ID = 1.0 A 0.177 0.222 0.242 0.303 On-Resistance (P-Channel) at 1 A - 20 VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.7 A On-State (P-Channel) Drain-Current ID(on) VIN-OUT 0.2 V, VIN = 5 V, VON/OFF = 1.5 V 1 VIN-OUT 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 1 V A Notes: a. Surface mounted on FR4 board. b. VIN = 20 V, VON/OFF = 8 V, TA = 25 C. c. Pulse test: pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73449 S10-0792-Rev. C, 05-Apr-10 Si1869DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.6 0.6 0.5 0.5 0.4 0.4 VDROP (V) V DROP (V) VON/OFF = 1.5 V to 8 V TJ = 125 C 0.3 TJ = 25 C 0.2 VON/OFF = 1.5 V to 8 V TJ = 125 C 0.3 0.2 TJ = 25 C 0.1 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.0 3.0 0.5 1.0 1.5 2.0 IL (A) IL (A) VDROP vs. IL at VIN = 4.5 V VDROP vs. IL at VIN = 2.5 V 2.5 0.5 0.6 VON/OFF = 1.5 V to 8 V VON/OFF = 1.5 V to 8 V 0.5 0.4 V DROP (V) VDROP (V) 0.4 TJ = 125 C 0.3 TJ = 25 C 0.3 0.2 TJ = 125 C 0.2 0.1 0.1 TJ = 25 C 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 1 2 3 5 IL (A) VIN (V) VDROP vs. IL at VIN = 1.8 V VDROP vs. VIN at IL = 0.7 A 6 0.5 0.10 IL = 0.7 A VON/OFF = 1.5 V to 8 V IL = 0.7 A VON/OFF = 1.5 V to 8 V R SS(on) - On-Resistance () 0.06 VIN = 1.8 V V DROP Variance (V) 4 VIN = 4.5 V 0.02 - 0.02 0.4 0.3 TJ = 125 C 0.2 TJ = 25 C 0.1 - 0.06 - 0.10 - 50 0.0 - 25 0 25 50 75 100 125 TJ - Junction Temperature (C) VDROP Variance vs. Junction Temperature Document Number: 73449 S10-0792-Rev. C, 05-Apr-10 150 0 1 2 3 4 5 6 VIN (V) On-Resistance vs. Input Voltage www.vishay.com 3 Si1869DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1.6 20 IL = 0.7 A VON/OFF = 1.5 V to 8 V VIN = 4.5 V tf VIN = 1.8 V 1.2 td(off) 16 Time ( s) R DS(on) - On-Resistance (Normalized) 1.4 1.0 0.8 12 IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F 8 4 tr 0.6 - 50 td(on) 0 - 25 0 25 50 75 100 125 0 150 2 4 TJ - Junction Temperature (C) 6 8 10 R2 (k) Switching Variation R2 at VIN = 4.5 V, R1 = 20 k Normalized On-Resistance vs. Junction Temperature 100 40 tf 35 IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F 25 80 Time ( s) Time ( s) 30 20 td(off) 15 tf IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F 60 40 10 td(off) 20 5 tr td(on) tr 0 0 0 2 4 6 8 0 10 td(on) 2 4 R2 (k) 6 8 10 R2 (k) Switching Variation R2 at VIN = 2.5 V, R1 = 20 k Switching Variation R2 at VIN = 1.8 V, R1 = 20 k 250 200 td(off) td(off) 200 150 Time ( s) Time ( s) 150 IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F 100 IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F 100 tf tf 50 50 tr td(on) td(on) tr 0 0 0 www.vishay.com 4 20 40 60 80 100 0 20 40 60 80 R2 (k) R2 (k) Switching Variation R2 at VIN = 4.5 V, R1 = 300 k Switching Variation R2 at VIN = 2.5 V, R1 = 300 k 100 Document Number: 73449 S10-0792-Rev. C, 05-Apr-10 Si1869DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 200 td(off) IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F Time ( s) 150 100 tf 50 td(on) tr 0 0 20 40 60 80 100 R2 (k) Switching Variation R2 at VIN = 1.8 V, R1 = 300 k 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73449. Document Number: 73449 S10-0792-Rev. C, 05-Apr-10 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1