IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate. Low noise recovery: Ultra soft fast recovery diode. High thermal fatigue durability: (delta Tc=70K, N>30,000cycles) AlSiC base-plate/AlN substrate o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Symbol Unit Collector Emitter Voltage Gate Emitter Voltage VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) +0 Notes: (1) Recommended Value 1.80.2/15 -3N*m MBN1500E33E2 V V 3,300 20 o 1,500 (Tc=95 C) A 3,000 1,500 A 3,000 o C -40 ~ +150 o C -50 ~ +125 VRMS 6,000(AC 1 minute) 2/15 (1) N*m 6 (2) (2) Recommended Value 5.50.5N*m ELECTRICAL CHARACTERISTICS Item Symbol Unit Collector Emitter Cut-Off Current I CES mA Gate Emitter Leakage Current IGES nA Collector Emitter Saturation Voltage VCE(sat) V Gate Emitter Threshold Voltage Input Capacitance Internal Gate Resistance Rise Time Turn On Time Switching Times Fall Time Turn Off Time VGE(TO) Cies Rge tr ton tf toff V nF VFM V trr s Peak Forward Voltage Drop Reverse Recovery Time s Min. Typ. Max. -500 2.5 5.5 1.6 2.0 0.9 2.7 2.2 - 20 2.95 3.1 6.3 195 1.3 2.0 3.0 1.7 4.4 2.6 2.6 12 60 +500 3.5 7.5 2.6 3.5 2.6 5.5 3.0 - 0.2 0.8 1.2 Test Conditions o VCE=3,300V, VGE=0V, Tj=25 C o VCE=3,300V, VGE=0V, Tj=125 C o VGE=20V, VCE=0V, Tj=25 C o IC=1,500A, VGE=15V, Tj=125 C o IC=1,500A, VGE=15V, Tj=150 C o VCE=10V, IC=1,500mA, Tj=25 C o VCE=10V, VGE=0V, f=100kHz, Tj=25 C o VCE=10V, VGE=0V, f=100kHz, Tj=25 C VCC=1,650V, Ic=1,500A Ls=100nH RG=2.7 /2.7 , CGE=330nF (3) o VGE=15V, Tj=125 C o IF=1,500A, VGE=0V, Tj=125 C o IF=1,500A, VGE=0V, Tj=150 C Vcc=1,650V, IF=1,500A, Ls=100nH o Tj=125 C Eon(10%) 2.9 3.6 o Tj=125 C 3.2 Eon(full) o 3.5 Tj=150 C VCC=1,650V, Ic=1,500A, Eoff(10%) 2.2 2.6 o Tj=125 C Ls=100nH, RG=2.7 /2.7 , Turn Off Loss J/P 2.4 CGE=330nF (3) Eoff(full) o 2.5 Tj=150 C V =15V GE Err(10%) 1.4 1.9 o Tj=125 C Reverse Recovery Loss J/P 1.7 Err(full) o 2.1 Tj=150 C Notes:(3) RG and CGE value are the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. DWN. * Please contact our representatives at order. M.Nakamura '10.04.30 * For improvement, specifications are subject to change without notice. CHKD. Y.Koike '10.04.30 * For actual application, please confirm this spec sheet is the newest revision. APPD. Turn On Loss J/P M.Hiyoshi '10.04.30 http://store.iiic.cc/ P1 IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 THERMAL CHARACTERISTICS Item Stray inductance module Thermal Impedance IGBT FWD Contact Thermal Impedance Symbol Unit Min. Typ. LSCE Rth(j-c) Rth(j-c) nH - 12 - Rth(c-f) K/W K/W - Max. Conditions 0.0078 Junction to case 0.0156 Case to fin (grease=1W/(mK), 0.005 heat-sink flatness 50um) MODULE MECHANICAL CHARACTERISTICS Item Unit Weight Stray inductance in module Terminal Resistance Comparative Tracking Index Module base plate Material Baseplate Thickness Insulation plate Material Terminal Surface treatment Case Material Fire and Smoke Category g LS(CM-EM) LS(ES-EM) LS(CM-CS) RTerminal (CTI) nH m mm Characteristics 1,300 12 3.8 6.4 0.09 600 Al-SiC 5 Al N Ni plating Poly-Phenilene Sulfide I2 / F3 http://store.iiic.cc/ Conditions Collector-main to Emitter-main Emitter-sense to Emitter-main Collector-main to Collector sense Collector-main to Emitter-main NFF 16-102 P2 IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 DEFINITION OF TEST CIRCUIT Ls LLOAD Vcc Rg G/D Cge Fig.1 Switching test circuit Ic Vce Ls= VL dIc ( d )t=t L t 0 VL tL Fig.2 Definition of stray inductance Ic Ic Vce 90% Vce Vce 0.1Vce 90% Irm 0 0 Vge 10% t1 10% 10% 10% t t tr ton t3 t4 t2 0 90% t tf toff t7 t8 t6 t8 Eon(10%)= Ic Vce dt t3 Eoff(10%)= Ic Vce dt t7 t6 t2 Eon(Full)= Ic Vce dt 0.5Irm 0.1IF 0 t t Vge t5 t4 t1 0 10% Eoff(Full)= Ic Vce dt t5 Fig.3 Definition of switching loss http://store.iiic.cc/ trr IF -Ic t9 t11 t12 t10 t12 Err(10%)= IFVce dt t11 t10 Err(Full)= IF Vce dt t9 P3 IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 CHARACTERISTICS CURVE STATIC CHARACTERISTICS TYPICAL TYPICAL 3,000 Tc=25 VGE=15V 3,000 Tc=125 13V VGE=15V 13V 2,500 2,500 11V Collector Current, IC(A) Collector Current, IC(A) 11V 2,000 1,500 2,000 1,500 1,000 1,000 9V 9V 500 500 7V 7V 0 0 0 2 4 0 6 Collector-Emitter Voltage, VCE(V) 2 4 6 Collector-Emitter Voltage, VCE(V) Collecter Current vs. Collector to Emitter Voltage Collecter Current vs. Collector to Emitter Voltage TYPICAL TYPICAL 3000 3000 Tc=150 VGE=15V VGE=0V 13V 2500 2500 Tc=25 Forward Current, IF(A) Collector Current, IC(A) 11V 2000 1500 2000 1500 1000 1000 Tc=125 9V Tc=150 500 500 7V 0 0 0 2 4 6 0 1 2 3 4 Forward Voltage, VF(V) Collector-Emitter Voltage, VCE(V) Collecter Current vs. Collector to Emitter Voltage http://store.iiic.cc/ Forward Voltage of free-wheeling diode 5 P4 IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 DYNAMIC CHARACTERISTICS DEPENDENCE OF CURRENT TYPICAL 10.0 TYPICAL 6.0 Conditions Conditions Ls=100nH Vcc=1650V VG=15V RG=2.7 CGE=330nF Tc=125 9.0 8.0 Eon(full) 150) Conditions Conditions Ls=100nH Vcc=1650V VG=15V RG=2.7 CGE=330nF Tc=125 5.5 5.0 V CE IC Eoff(full) (150 ) IC V CE 0 10% 10% V GE 0 Eon(full) t4 t2 t1 t3 6.0 T4 Eon(10%) = (IC x VCE) dt T3 T2 Eon( full ) = (IC x VCE) dt 5.0 T1 4.0 Eon(full) -40) Eon(10%) 3.0 Turn-off Loss, Eoff(J/pulse) Turn-on Loss, Eon(J/pulse) 4.5 7.0 10% 0 4.0 10% V GE t 0 Eoff(full) t8 t6 t5 t7 3.5 T8 Eoff(10%) = (IC x VCE) dt T7 T6 Eoff( full) = (IC x VCE) dt 3.0 T5 2.5 Eoff(10%) Eoff(full) -40 2.0 1.5 2.0 1.0 1.0 0.5 0.0 0.0 0 500 1000 1500 2000 2500 3000 Collector Current, IC(A) TYPICAL Conditions Conditions Reverse Recovery Loss, Err(J/pulse) Err(full) (150 ) Ls=100nH Vcc=1650V VG=15V RG=2.7 CGE=330nF Tc=125 2.5 Err(full) 2.0 Err(full) -40 1.5 Err(10%) 1.0 V CE 0.1V CE IRM 0 0.1IF t IF - IC t12 t9 t11 Err (10%) = T12 T11 Err ( full ) = 0.0 T10 T9 0 500 1000 1500 2000 1000 1500 2000 2500 Turn-off Loss vs. Collector Current 3.5 0.5 500 Collector Current, IC(A) Turn-on Loss vs. Collector Current 3.0 0 t10 (IC x VCE) dt (IC x VCE) dt 2500 3000 Forward Current, IF(A) Recovery Loss vs. Forward Current http://store.iiic.cc/ 3000 P5 IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 TYPICAL TYPICAL 6.0 6.0 Conditions Conditions ton 4.0 toff 3.0 Ls=100nH Vcc=1650V VG=15V RG=2.7 CGE=330nF Tc=125 5.0 tr 2.0 Switching time, ton, tr, toff, tf, trr (s) 5.0 Switching time, ton, tr, toff, tf, trr (s) Conditions Conditions Ls=100nH Vcc=1650V VG=15V RG=2.7 CGE=330nF Tc=150 toff 4.0 tr 3.0 2.0 tf tf 1.0 1.0 trr trr 0.0 0.0 0 500 1000 1500 2000 2500 3000 TYPICAL 6.0 Conditions Conditions Ls=100nH Vcc=1650V VG=15V RG=2.7 CGE=330nF Tc=-40 4.0 ton 3.0 toff tr 2.0 1.0 trr tf 0.0 0 500 1000 1500 2000 500 1000 1500 2000 2500 Switching time vs. Collector current Switching time vs. Collector current 5.0 0 Collector Current, IC(A) Collector Current, IC(A) Switching time, ton, tr, toff, tf, trr (s) ton 2500 3000 Collector Current, IC(A) Switching time vs. Collector current http://store.iiic.cc/ 3000 P6 IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 DEPENDENCE OF Rg TYPICAL TYPICAL 6.0 3.0 Conditions Conditions 5.0 Ls=100nH Vcc=1650V IC=1500A VG=15V CGE=330nF Tc=125 2.5 Eoff(full) Eon(full) Turn-off Loss, Eoff(J/pulse) Turn-on Loss, Eon(J/pulse) Conditions Conditions Ls=100nH Vcc=1650V IC=1500A VG=15V CGE=330nF Tc=125 4.0 3.0 Eon(10%) 2.0 Eoff(10%) 2.0 1.5 1.0 IC V CE IC V CE 10% 0 10% 10% 0 t 0 V GE 0 1.0 10% V GE 0.5 t5 t7 t1 t3 t8 t6 t4 t2 T8 Eoff (10%) = (IC x VCE ) dt T4 Eon(10%) = (IC x VCE ) dt T7 T3 T6 Eoff ( full ) = (IC x VCE) dt T2 Eon( full ) = (IC x VCE ) dt T5 T1 0.0 0.0 0 1 2 3 4 5 0 Gate Resistance, RG() TYPICAL Conditions Conditions IRM 0.1IF 0 t IF - IC t12 t9 t11 Err(10%) = T12 T11 Reverse Recovery Loss, Err(J/pulse) V CE 0.1V CE Err( full ) = Err(full) T10 T9 t10 (IC x VCE) dt (IC x VCE ) dt 2.0 1.5 Err(10%) 1.0 0.5 0.0 0 1 2 3 Turn-off Loss vs. Gate Resistance 3.0 2.5 2 Gate Resistance, RG() Turn-on Loss vs. Gate Resistance Ls=100nH Vcc=1650V IC=1500A VG=15V CGE=330nF Tc=125 1 3 4 5 Gate Resistance, RG() Recovery Loss vs. Gate Resistance http://store.iiic.cc/ 4 5 P7 IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 OUTLINE DRAWINGS Unit in mm C C C E E E C G E Circuit diagram Baseplate flatness test (1)Convex measurement Convex max +250m (2) 8 points gap measurement Gap +50m m m 6. 25 m m 01 1 122mm 158.2mm 160mm Convex measurement area Base gap measurement points http://store.iiic.cc/ P8 IGBT MODULE Spec.No.IGBT-SP-08002 R5 P9 MBN1500E33E2 TRANSIENT THERMAL IMPEDANCE Maximum Transient thermal impedance : Rth(j-c) (K/W) 0.1 FWD 0.01 I GBT 0.001 0.0001 0.001 0.01 0.1 1 10 Time : t(s) Transient Thermal Impedance Curve RBSOA IC( to be turned off ) (A) 3500 3000 2500 VCE( spike Voltage ) IC( to be turned off ) 2000 Conditions: Vcc 2000V, Ic 3000A, Rg 2.7 , Cge 330nF 1500 o Ic o VGE=+-15V, -40 C Tj 150 C, Ls 290nH, on pulse width 10us ( Vce spike voltage and Ls are defined at auxiliary terminal) 1000 500 0 Definition of RBSOA waveform 0 0 500 1000 1500 2000 2500 3000 3500 VCE( spike Voltage ) (V) (at auxiliary terminal) Reverse bias safe operation area ( RBSOA ) http://store.iiic.cc/ Vce t IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 QG-VG CURVE TYPICAL Conditions:Ls=100nH, VCC=1650V, IC=1500A, o VGE=+/-15V, Tj=25 C, 15 10 VGE (V) 5 0 -5 -10 -15 -12 -10 -8 -6 -4 -2 0 2 C) QG ( 4 6 8 10 12 QG-VGE curve Cies,Coes,Cres Curve TYPICAL 1000 Conditions Tj=25 f=100kHz Cies Cies, Coes, Cres (nF) 100 10 Coes Cres 1 0.1 1.0 10.0 100.0 Collector to Emitter Voltage, VCE (V) Capacitance vs. Collector to Emitter Voltage http://store.iiic.cc/ P10 IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 COSMIC RAY FAILURE RATE TYPICAL 10000 Expected Failure Rate (Fit) 1000 100 10 1 0 1400 1600 1800 2000 2200 Vce (V DC) Expected Cosmic Ray Failure Rate (at Sea Level) Negative environmental impact material Please note the following materials are contained in the product, in order to keep characteristic and reliability level. Material Contained part Lead (Pb) and its compounds Solder Arsenic and its compounds Si chip http://store.iiic.cc/ P11 IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. 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