IXYS reserves the right to change limits, conditions and dimensions.
CS 29
© 2003 IXYS All rights reserved
Symbol Conditions Maximum Ratings
IT(RMS) TVJ = TVJM 35 A
IT(AV)M TC = 95°C; 180° sine (IT(RMS) current limit) 23 A
ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A
VR = 0 V t = 8.3 ms (60 Hz), sine 215 A
TVJ = TVJM; t = 10 ms (50 Hz), sine 175 A
VR = 0 V t = 8.3 ms (60 Hz), sine 185 A
I2tTVJ = 45°C; t = 10 ms (50 Hz), sine 200 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 195 A2s
TVJ = TVJM; t = 10 ms (50 Hz), sine 155 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 145 A2s
(di/dt)cr TVJ = TVJM; repetitive, IT = 40 A 150 A/µs
f = 50 Hz; tP = 200 µs;
VD = 2/3 VDRM;
IG = 0.2 A; non repetitive, IT = IT(AV)M 500 A/µs
diG/dt = 0.2 A/µs
(dv/dt)cr TVJ = TVJM;V
DR = 2/3 VDRM; 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM;t
P = 30 µs 5 W
IT = IT(AV)M;t
P = 300 µs 2.5 W
PGAV 0.5 W
VRGM 10 V
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
VISOL 50/60 Hz RMS; IISOL ≤ 1 mA 2500 V~
TL1.6 mm from case; 10 s 260 °C
FCMounting force 11...65 / 2.4...11 N/lb
Weight 2g
VRRM = 800/1200 V
IT(RMS) = 35 A
IT(AV)M = 23 A
VRSM VRRM Type
VDSM VDRM
VV
800 800 CS 29-08io1C
1200 1200 CS 29-12io1C
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500 V electrical isolation
Low cathode-to-tab capacitance
(15 pF typical)
Planar passivated chips
Epoxy meets UL 94V-0
High performance glass passivated
chip
Long-term stability of leakage
current and blocking voltage
Applications
Motor control
Power converter
AC power controller
Light and temperature control
SCR for inrush current limiting
in power supplies or AC drive
Advantages
Space and weight savings
Simple mounting
98839A (04/28)
Phase Control Thyristor
ISOPLUS220TM
Electrically Isolated Back Surface
Preliminary Data Sheet
AC
G
ISOPLUS 220TM
Isolated back surface*
CS 29
© 2003 IXYS All rights reserved
Symbol Conditions Characteristic Values
IR, IDTVJ = TVJM; VR = VRRM; VD = VDRM ≤2mA
VTIT= 45 A; TVJ = 25°C ≤1.5 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.82 V
rT16.5 mΩ
VGT VD = 6 V; TVJ = 25°C ≤1.0 V
TVJ = -40°C ≤1.2 V
IGT VD = 6 V; TVJ = 25°C ≤65 mA
TVJ = -40°C ≤80 mA
VGD TVJ = TVJM; VD = 2/3 VDRM ≤0.2 V
IGD ≤5mA
ILTVJ = 25°C; tP = 10 µs; ≤150 mA
IG = 0.2; diG/dt = 0.2 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞≤50 mA
tgd TVJ = 25°C; VD = ½ VDRM;≤2µs
IG = 0.2 A; diG/dt = 0.2 A/µs
RthJC DC current 1.2 K/W
RthCK DC current typical 0.6 K/W
aMax. acceleration, 50 Hz 50 m/s2
See CS 30..io1 data sheet for electrical characteristic curves.
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time tgd
10 100 1000
1
10
100
1000
µs
t
gd
IG
1 10 100 1000 10000
0.1
1
10
IG
VG
mA
V
4
2
1
56
mA
typ. Limit
3
IGD, TVJ =125°C
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
TVJ = 25°C
ISOPLUS220 Outline
IXYS reserves the right to change limits, conditions and dimensions.
CS 29
© 2003 IXYS All rights reserved
0 20 40 60 80 100 120
0
10
20
30
40
50
60
70
80
IT(AV)M
0 10203040506070
0
20
40
60
80
100
120
140
0 25 50 75 100 125 150
0.001 0.01 0.1 1
0
100
200
300
400
0.0 0.5 1.0 1.5 2.0
0
20
40
60
80
100
ITSM
IT
A
VTt
s
PT
W
IT(AV)M
A
Tamb
°C
V
A
12345678910
1000
I2t
t
A2s
Tcase
A
°C
ms
500
2000
Fig. 3 Forward characteristics Fig. 4 Surge overload current
ITSM: crest value, t: duration
Fig. 5 I2t versus time (1-10 ms)
Fig. 6 Power dissipation versus forward current and ambient temperature
TVJ = 125°C
TVJ = 45°C
50Hz, 80%VRRM
TVJ = 125°C
DC
180° sin
120°
60°
30°
RthKA :
0.1 K/W
0.5 K/W
1 K/W
2 K/W
4 K/W
10 K/W
TVJ = 45°C
DC
180° sin
120°
60°
30°
VR = 0 V
TVJ = 25°C
TVJ = 125°C
