© 1999 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ250 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C60A
IDM TC= 25°C, pulse width limited by TJM 240 A
IAR TC= 25°C60A
EAR TC= 25°C45mJ
EAS TC= 25°C 1.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 360 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in) from case for 10 s 3 00 °C
MdMounting torque TO-247 1.13/10 Nm/lb.in.
TO-264 0.9/6 Nm/lb.in.
Weight TO-247 6 g
TO-264 10 g
TO-268 4 g
HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Low Gate Charge and Capacitances
Features
!Low gate charge
!International standard packages
! Epoxy meet UL 94 V-0, flammability
classification
!Low RDS (on) HDMOSTM process
!Rugged polysilicon gate cell structure
!Avalanche energy and current rated
!Fast intrinsic Rectifier
Advantages
!Easy to mount
!Space savings
!High power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 250 V
VGS(th) VDS = VGS, ID = 4 mA 2 4 V
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = VDSS TJ = 25 °C50µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 47 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
G = Gate
S = Source TAB = Drain
98630 (6/99)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
G
S
TO-264 AA (IXFK)
S
GDD (TAB)
Advanced Technical Information
IXFH 60N25Q
IXFK 60N25Q
IXFT 60N25Q
VDSS = 250 V
ID25 = 60 A
RDS(on) = 47mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤250 ns
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 22 35 S
Ciss 5100 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MH z 1000 p F
Crss 400 pF
td(on) 27 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 60 ns
td(off) RG = 2.0 Ω (External), 80 ns
tf25 ns
Qg(on) 180 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 39 nC
Qgd 90 nC
RthJC 0.35 K/W
RthCK TO-247 0.25 K/W
TO-264 0.15 K/W
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
TO-268 Outline
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 60 A
ISM Repetitive; pulse width limited by TJM 240 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 2 50 ns
QRM 1µC
IRM 8 A
IF = IS -di/dt = 100 A/µs, VR = 100 V
IXFH 60N25Q IXFK 60N25Q
IXFT 60N25Q
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
