Advanced sensor technologies for today's breakthrough applications. . PerkinElmer Optoelectronics provides Sensor, Lighting and Medical Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer, automotive, medical, analytical and defense markets. With development and manufacturing centers around the world, the company is able to leverage and align global resources to serve customers through innovation and operational excellence. With in-house sensor design and vertically integrated manufacturing including low-cost packaging centers, PerkinElmer sells more than 150 million optical sensors each year. Consistent with PerkinElmer Optoelectronics' policy of continually updating and improving its products, the type designation and data are subject to change, unless otherwise arranged. No obligations are assumed for notice of change of future manufacture of these devices or materials. Copyright(c)2007 PerkinElmer Optoelectronics. All rights reserved. The PerkinElmer logo and design are registered trademarks of PerkinElmer, Inc. TPMI(R), SerinusTM and DigiPyroTM are trademarks of PerkinElmer, Inc. or its subsidiaries, in the United States and other countries. All other trademarks not owned by PerkinElmer, Inc. or its subsidiaries that are depicted herein are the property of their respective owners. Information furnished by PerkinElmer Optoelectronics is believed to be accurate and reliable. However, no responsibility is assumed by PerkinElmer Optoelectronics for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent right of PerkinElmer, Inc. table of contents Detectors Thermopile Detectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pyroelectric Infrared Detectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Photodiodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Phototransistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Infrared Switches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Photocells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Analog Optical Isolators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Channel Photomultipliers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Photon Counting Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Solid State Emitters Infrared Emitting Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Laser Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Imaging Components Line Scan Imagers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 CMOS Photodiode Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 CCD Linear Array Cameras . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Special Purpose CCD Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 thermopile detectors Features * Available in TO-39 and TO-46 housings * Available in isothermal housing options * Integrated signal processing ASIC available (TPMI(R)) * Single, dual or quad elements * 8-element line arrays and 4x4 matrix arrays with various lens optics and integrated ASIC with multiplexer * Various filters for optical broadband or narrow-band applications * Excellent repeatability of electro-optical parameters * Ambient temperature reference (thermistor or high stability Si-spreading resistor) included * High chip sensitivity of several 10 V/W; DC radiation sensitive * Extremely low temperature coefficient of sensitivity and resistivity * Constant response over the infrared spectrum due to patented absorber technology * The absence of microphonic noise effects * Low susceptibility to electromagnetic pulses (EMP) due to the low internal resistance (<100 k) * Rugged construction based on CMOS silicon micromachining technology Description Thermopile detectors directly sense thermal radiation, providing the perfect device for remotely measuring temperatures without the need for any mechanical chopper. PerkinElmer's proprietary and innovative Si-based micromachining technology guarantees a new generation of components: extreme long-term stability, very low temperature coefficient in sensitivity, and excellent repeatability of electro-optical parameters. Thermopile sensors allow remote temperature sensing at a low system cost. The sensor does not require cooling, and can reach an accuracy of 1C, dependent on the measurement range. For narrow temperature ranges, as in body temperature measurement, a precision of 0.1C is possible. Typical Applications * Remote temperature sensing, hand-held or industrial pyrometers * Ear or body thermometers * Temperature control in copiers and printers * Sensor modules for control of air condition systems (heat management, home, automotive) * Temperature-sensor modules in home appliances * Sensor arrays for spatial temperature measurements (imaging applications) * Presence detection * Sensors with infrared bandpass filters for gas detection by infrared absorption * Fire detection * Industrial drying Single-Element Thermopile Detectors: TPS Series The different available chip sizes and packaging types, together with the variety in window openings with and without a silicon lens, different filters, enable the adaptation of the PerkinElmer thermopiles to virtually every application where a remote temperature measurement or control is needed. Datasheets available upon request. 2 www.optoelectronics.perkinelmer.com Thermopile Modules with Integrated Signal Processing: TPMI(R) Series For convenient use, PerkinElmer offers thermopile sensors with an integrated electronic circuit for the necessary signal condition and ambient temperature compensation - the TPMI(R). This very compact and miniature thermopile module is offered as a fully calibrated, ready-to-go sensor. Various temperature ranges and optics are available. Isothermal Housing Fast temperature changes and temperature gradients are known to influence the output signal of thermal radiation sensors such as thermopiles and generate a measurement error. Therefore, PerkinElmer has developed a novel housing concept with large thermal mass and thermal conductivity. This sensor provides a stable signal even in demanding industrial, automotive, or medical applications such as ear thermometers, where high accuracy is required while the sensor is exposed to external heat sources. Dual- and Quad-Element Types: TPS 2, TPS 4 Series PerkinElmer offers thermopile detectors with two or four channels, each of which can be equipped with one of the many available infrared spectral bandpass filters. The main application of multiple channel thermopiles is gas detection through IR absorption. Prominent gases to be detected are CO2, hydrocarbons and CO. Thermopile Line and Matrix Arrays: TPL, TPA Series The new TPA- (matrix array) and TPL- (line array) series offer multi-element thermopile arrays combined with an optical lens, amplifier, and interface electronics (multiplexer, ambient temperature sensor) in a compact TO-39-type housing. Array sensors are sold as a modular type, i.e. on a PCB with external data memory. These TPA- and TPL-Modules are precalibrated with the data stored in an EEPROM. All thermopile detectors are RoHS compliant. Thermopile Detectors Single Element Thermopile Detectors Technical Specification Dual and Quad Element Thermopile Detectors General Data Tc of sensitivity (absolute value): 0.02%/K Tc of resistance (absolute value): 0.02%/K Max. operating temperature: -20 to 100C Max. storage temperature: -40 to 100C Thermistor BETA: 3964 K Option for all types: 8-14 m Pyrometry filter: G9 DC Output Voltage Time Field of Sensitivity at Tamb = 25C Constant View V/W Tobj = 40C (mV) ms Part Number Housing TPS 332 TO-46 100 35 1.6 Active Area mm2 TP Chip Resistance k Thermistor 25 0.7 x 0.7 75 100 30 k TPS 334 TO-39 60 35 0.74 25 0.7 x 0.7 75 TPS 334 G9 TO-39**** 60 20 0.4 35 0.7 x 0.7 75 30 TPS 334 L5.5 TO-39** 7 55 0.3 25 0.7 x 0.7 75 30 TPS 336-IRA TO-39*** 15 35 1.0 25 0.7 x 0.7 75 30 TPS 232 TO-46 110 36 0.73 16 round, 0.5 87 100 TPS 23B Isothermal TO-46 90 36 0.65 16 round, 0.5 TPS 535 TO-39 80 20 1.5 35 1.2 x 1.2 Test conditions: T = 25C Field of view: at 50% intensity points Noise: r.m.s., 300 K * 500 K black body ** with 5.5 mm lens 87 Spreading resistor 1 50 30 *** with int. reflector **** with 8...12 m IR window Dual and Quad Thermopile Detectors for Optical Gas Detection Technical Specification DC Time Field of Sensitivity Constant View V/W ms Part Number Housing TPS 2534 TO-39** 2x90 42 TPS 4339 TO-39*** 4x60 75 Test conditions: T = 25C Field of view: at 50% intensity points Noise: r.m.s., 300 K Active Area mm2 TP Chip Resistance k Noise Hz nV/ NEP Hz nW/ D* Hz/W cm 35 1.2x.1.2 50 29 0.7 1.8x108 30 25 0.7x0.7 75 35 0.5 1.5x108 100 * 500 K black body ** with 2 channels *** with 4 channels Thermistor (25C) k Above data are referenced without the bandpass filter. Option for all types: individual bandpass filters for each channel Line and Matrix Arrays Technical Specification Part Number Number of Pixels Housing TPLM 086 L5.5 TO-39 on PCB 8 element line Optics 41x6 f/1 optics, f=5.5 mm Output Voltage V (80C object, 20C ambient) Noise Hz mV/ (.5-20Hz) Object Temperature -20-100C 0.95 0.4 or -20-200C TPAM 166 L3.9 TO-39 on PCB 4x4 matrix 41x32 f/1 optics, f=3.9 mm Output resistance: 200 Power up time: 0.3 s Sample frequency: 3 kHz Test conditions: T = 25C Operating voltage: 5 V Operating current: 1 mA Zero signal offset: VDD/2 Thermopile Sensors in TO-46 (left) (TPS 332, TPS 232) and Isothermal (right) (TPS 23B) Housing Field of View 0.95 -20-100C Max. operating temperature: storage temperature: Temperature reference slope: Temperature reference offset: 0.4 -20-100CMax. -40-100C 10 mV/K 0 mV TPMI(R) Modules Technical Specification Part Number Housing Optics a2TPMI 334 TO-39 window opening 2.5 mm 60 a2TPMI 334 L5.5 TO-39 integrated Si lens, 5.5 mm focal length 7 (D:S = 8:1) a2TPMI 334 IRA TO-39 internal mirror 15 (D:S = 4:1) Field of View Technical Specification Object Temperature Range Analog Output Supply Voltage Optics Field of View A2TPMI334-L5.5 TO-39, 8.3 mm height OAA180 / 6264 (without pins) -20-180C 0-5 V 5V Si-lens 7 A2TPMI334-L5.5 TO-39, 8.3 mm height OAA060 / 6266 (without pins) -20-60C 0-5 V 5V Si-lens 7 -20-60C 0-5 V 5V infrared window 60 Mfr Type A2TPMI334 OAA060 / 6259 Thermopile TPMI(R) Modules with Si-Lens Optics Package TO-39, 4.2 mm height (without pins) For further details please contact us. www.optoelectronics.perkinelmer.com 3 pyroelectric infrared detectors Features * Low noise, high responsivity * Excellent common mode balance for Dual Element types * Available in TO-39, TO-5 housings * Various filter windows for broad band or narrow band applications * Single and Dual channel devices * Dual and Quad-type elements for intrusion applications * Thermally compensated versions for single element types Typical Applications * Intrusion alarm * Motion detection * Ceiling mount presence detection * Gas analysis * Gas alarm * Non-contact infrared measurements Datasheets available upon request. Pyroelectric Basics Pyroelectric materials produce a charge shift when they undergo a change in thermal energy. This effect is applied for detectors that show an output signal similar to alternative current with a change of incident infrared radiation. Such pyroelectric detectors are used in all kinds of motion detection. Detectors based on the same principle are applied for gas monitoring based on the spectral absorption method. Dual Element Types Dual Element Detectors combine two elements which are connected in reverse polarity to each other to one FET source follower output. Typical applications: intrusion alarm PIR, motion detection for light switches. Four Element Two Channel Types Four Element Detectors combine four elements to two FET outputs. The two individual channels allow signal processing to avoid false alarms and provide redundancy. Typical applications: high end intrusion alarms. Ceiling Mount Detectors Ceiling Mount Detectors have a special element configuration suitable for ceiling lens designs. They combine two or four elements to one FET output. Different window sizes for cost optimization and optional RF protection is available. Applications: presence detection and alarms. Single Element Detectors This range of detectors offer one element with source follower output. Different element sizes are available. Most of the preferred types have built-in thermal compensation. Special IR windows of narrow bandwidth are offered. Applications: non-contact temperature measurements and gas monitors. Dual Channel Detectors These special designs offer two Single Element Detectors in one TO-5 case. Each one is equipped with its individual filter and provides its own output. This is also available in temperature compensated version. Various narrow-band filter windows can be chosen. Application: gas monitor, gas alarms. DigiPyroTM Family To enable total digital electronics, PerkinElmer introduces a new family of pyrodetectors with digital output. All pyroelectric infrared detectors are RoHS compliant. 4 www.optoelectronics.perkinelmer.com Pyroelectric Infrared Detectors Dual Element Detectors Technical Specification Part Number Housing LHi 944 TO-39 LHi 958 TO-5 LHi 968 TO-5 LHi 874 TO-39 LHi 878 TO-5 Responsivity V/W typ (1 Hz) Noise Vpp typ NEP Hz typ W D* Hz/W typ cm Field of View Element Size Horizontal Vertical mm2 4000 20 7.5 x10-10 1.9x107 110 110 2x1/2x1 3700 20 8.1x10-10 1.75x107 110 110 2x1/2x1 3800 20 8.0x10-10 1.9x107 100 100 2x1/2x1 4000 20 7.5x10-10 1.9x107 90 95 2x1/2x1 4000 20 7.5x10-10 1.9x107 90 95 2x1/2x1 Four Element Two Channel Detectors General Data Max. operating temperature: -40 to +85C Max. storage temperature: -40 to +85C Operating voltage: 2 to 12 V/47 k Load resistor Offset voltage: 0.2 to 1.5 V/47 k Load resistor Technical Specification Part Number Housing Responsivity V/W typ (1 Hz) Noise Vpp typ NEP Hz typ W D* Hz/W typ cm LHi 1148 TO-5 4500 30 8.6x10-10 14x107 108 67 0.8x1.2 ea. 30 -10 14x107 108 67 0.9532 ea. LHi 1548 TO-5 6500 8.6x10 Field of View Element Size Horizontal Vertical mm2 Ceiling Mount Application Detectors Technical Specification Part Number Housing Responsivity V/W typ (1 Hz) Noise Vpp typ NEP Hz typ W D* Hz/W typ cm Field of View X Y Element Size mm2 LHi 906 TO-5 3000 20 7.5x10-10 719x107 150 150 2.66 ea. (round) LHi 1128 TO-5 8000 40 7.5x10-10 28x107 156 144 1x1 (4 elements) PYQ 1398 TO-5 8000 40 7.5x10-10 28x107 103 103 1x1 (4 elements) Single Element Detectors Technical Specification Part Number Housing Responsivity V/W typ (10 Hz) Noise nVRMS(10Hz) NEP Hz typ W D* Hz/W typ cm LHi 807 TO-5 640 600 9.4x10-10 16x107 -10 Field of View X Y Element Size mm2 135 120 1.5x1.5 LHi 807 TC TO-5 320 300 9.4x10 16x107 135 120 1.5x1.5 PYS 4198 TC TO-5 150 150 10x10-10 18x107 130 110 2x2 Field of View X (ea.) Y (ea.) These types offer special narrow band windows. Dual Channel Detectors Technical Specification Part Number Table Key Responsivity Noise NEP D* 100C Black Body, 1Hz electr.Bandwidth 1 to 10 Hz Bandwidth 100C Black Body, 1Hz electr.Bandwidth, 1Hz 100C Black Body, 1Hz electr.Bandwidth, 1Hz Housing Responsivity V/W typ (10 Hz) Noise nVRMS(10 Hz) NEP Hz typ W D* Hz/W typ cm Element Size mm2 LHi 814 G1/G20 TO-5 640 600 9.4x10-10 16x107 77 95 LHi 814 G2/G20 TO-5 640 600 9.4x10-10 16x107 77 95 1.5x1.5 (ea.) PYS 3228 TC TO-5 320 300 9.4x10-10 16x107 77 95 1.5x1.5 (ea.) 1.5x1.5 (ea.) These types offer special narrow band windows in pair, one channel as reference. All data refer to 25C www.optoelectronics.perkinelmer.com 5 gas sensors Benefits * No service requirement. * Digital output, self-monitoring and diagnostic features - enhanced ease of use. * Long-term stability: The system has a long service life without gradual degradation. * Contamination proof: no chemical sensitivity to other gases or aerosols, no poisoning effects, temporary or permanent. * System self-diagnosis: A system failure automatically produces a notification - no degradation goes unnoticed. * Selectivity: The sensor reacts precisely to the type of gas determined by the absorption region, with negligible response to other gases within the mixture. SerinusTM CO2 Sensor (PYM 122-1): Air Quality SerinusTM CO2 Sensor (PYM 122-2): Air Safety Natural Gas Alarm Sensor (PYM 151) PerkinElmer introduces a number of gas sensors based on a common platform, all based on the principle of non-dispersive infrared radiation absorption (NDIR). A robust thermal IR source and a highly reliable dual channel pyroelectric detector are the core of the sensor cell, which is detemined in size by an absorption chamber. In the event of the specified gas diffusing into the chamber, the signal is reduced accordingly and the included electronics generate a signal output. Pyroelectric detectors are especially suited for optical IR-based gas detection due to their robustness and low sensitivity to environmental temperature influences. A selective IR window in the detector allows the precise spectral selection of a gas. Appropriate electronics are required for obtaining a user-friendly signal. A microprocessor converts the amplified sensor signal into a gas concentration value. The PerkinElmer gas sensor range is featured with pre-programmed calibration and enables safe long term operation. The gas sensors include the following versions: SerinusTM CO2 Sensor (PYM 122-1): Air Quality Calibrated to meet the air quality application range of 0 to 5000 ppm CO2 content. It provides a 16-bit digitally coded output signal and two additional fixed trigger levels as switched outputs (800 ppm / 1500 ppm). SerinusTM CO2 Sensor (PYM 122-2): Air Safety Calibrated to meet the air quality application range of 0 to 10% CO2 content. It provides a 16-bit digitally coded output signal and two additional fixed trigger levels as switched outputs (2% / 5%). Natural Gas Alarm Sensor (PYM 151-1 / PYM 152-1) Designed for natural gas alarm applications. It fully meets requirements of EN 50194 standard for gas alarm, calibrated to offer a Pre-Alert at 6% LEL and Main Alert at 12% LEL. It provides a 16-bit digitally coded output signal and self-diagnosis. 6 www.optoelectronics.perkinelmer.com Pyroelectric Infrared Detectors SerinusTM CO2 Sensor (PYM 122-1): Air Quality SerinusTM CO2 Sensor (PYM 122-2): Air Safety The perfect range of sensors to cover all applications of sensing CO2 in air, whether for comfort, energy management, air processing, air safety and cooling refrigerant supervision. SerinusTM CO2 Sensor (PYM 122) Natural Gas Alarm Sensor (PYM 151-1 / PYM 152-1) For natural gas alarm applications, providing EN standard required values such as Pre-Alert at 6% LEL and Main Alert at 12% LEL. It is the perfect solution for commercial and industrial gas alarm applications for all available mixtures of natural gas. Technical Specification PYM 122-1 Air Quality Units PYM 122-2 Air Safety Units Range 0...5000 ppm 0...10 % Resolution 1 ppm 0.1 % Remark CO2 Accuracy 50 ppm 0.2 % +/- 5% of measured value Reproducibility 10 ppm 0.2 % +/- 1% of measured value Pre-Alert Trigger Level S1 800 ppm 2 % Main Alert Trigger Level S2 1500 ppm 5 % Outputs S1, S2 30 V/100 mA Warm-Up Time 120 s 120 Response Time 30 s Long-Term Stability +/- 50 30 V/100 mA typical typical open collector max. s at 20C, after 1 hour with power off. max. 30 s 63% change of output upon step concentration change. ppm/yr +/- 0.2 %/yr max. max. Operating Voltage 5.0+/- 0.5 Volt 5.0+/- 0.5 Volt Current Consumption 240 150 mA mA 240 150 mA mA Operating Temperature Ranges -10 to +50 C -10 to +50 C Storage Temperature Range -20 to +60 C -20 to +60 C Environmental Humidity 95% R.H. 95% R.H. non condensing Expected Life-Span 10 years 10 years @ 25C, 50% r.H. DC max. Average max. typical Technical Specification PYM 151 PYM 152 Units Remark Units Range 0...20 % LEL 0...20 % LEL Resolution 1 % LEL 1 % LEL Reproducibility 2 % LEL 2 % LEL Pre-Alert Trigger Level S1 6 % LEL 6 % LEL Main Alert Trigger Level S2 12 % LEL 12 % LEL Outputs S1, S2 30 V/100 mA Warm-Up Time 120 s 120 Response Time 30 s Long-Term Stability +/- 0.5 Operating Voltage 5.0+/- 0.5 Current Consumption 240 150 Operating Temperature Ranges -10 to +50 30 V/100 mA Natural Gas +/- 1% of measured value typical typical open collector max. s at 20C, after 1 hour with power off. max. 30 s 63% change of output upon step concentration change. max. % LEL/a. +/- 0.5 % LEL/a. Volt 5.0+/- 0.5 Volt mA mA 240 150 mA mA max. DC max. Average C -10 to +50 C C -20 to +60 C 95% R.H. 95% R.H. non condensing 10 years 10 years @ 25C, 50% r.H. Storage Temperature Range -20 to +60 Environmental Humidity Expected Life-Span max. typical Natural Gas Alarm Sensor (PYM 151-1 / PYM 152-1) www.optoelectronics.perkinelmer.com 7 Pyroelectric Infrared Detectors DigiPyroTM digital output pyrodetectors Key Features and Benefits * Digital output sensor "direct link" interface * Infrared window 5.5...14 m transmission * High level electrical performance Low EMI sensitivity Unique responsivity Strong power rejection ratio Applications * Intrusion alarm applications * Motion activated switches Dual Element Detector PYD 1998 Triple Channel Quad Element Detector PYQ 2898 PerkinElmer presents the first detector series to dramatically differ from previous generations: the DigiPyroTM technology offers digital signal outputs via a special one wire direct link feature. The electronics include analog-to-digital conversion, on-chip low-power oscillator and the serial interface. As sensing elements, either dual element or quad element configurations are offered. PYD 1998 Dual Element Standard dual element configuration in TO-5 housing, offering one output in 15 bit digitized format - "direct link" = one wire interface feature. General Characteristics Pyro Element Pair A/D Conversion Serial Interface direct link Parameter Symbol Min. Typ. Max. Units Operating Voltage VDD 3.0 5 5.5 V Supply Current IDD 30 40 Responsivity 3.3 DigiPyroTM PYD 1998 A 4 Noise Serial Interface Refresh Frequency Oscillator VDD = 5 V kV/W 20 tREP Remarks 50 Vpp 3.70 ms ADC Counts of Bits 15 bits 1st bit is "0" ADC Resolution 14 bits Max. count = 214 ADC Sensitivity 6.0 6.5 7.0 ADC Offset 6200 8250 11000 Internal Clock Frequency FCLK 60 70 90 V/count counts kHz PYQ 2898 Triple Channel Quad Element High end version with 2 pairs of elements representing 2 channels and an additional temperature reference channel, quad element configuration in TO-5 housing offering 42 bit "direct link" interface. General Characteristics Pyro Element Pair A/D Conversion Serial Interface direct link Parameter Symbol Min. Typ. Max. Units Operating Voltage VDD 3.0 5.0 5.5 V Supply Current IDD 60 A (DC) 3.3 4 Responsivity Noise Pyro Element Pair Oscillator Tref Serial Interface Refresh Frequency VDD = 4 V kV/W 50 Vpp 137 Hz ADC Counts of Bits 42 bits ADC Resolution 14 bits Max. count = 214 ADC Sensitivity 6.1 6.5 7.0 V/count ADC Offset 7000 8192 9200 counts 60 70 90 kHz -5 5 counts/K % -10C to +80C -40C to +120C Internal Clock Frequency DigiPyroTM PYQ 2898 20 fREP Remarks fCLK Temperature Reference Gain Linearity 96 Operating Temperature T0 -40 85 C The electrical parameters may vary from specified values in accordance with their temperature dependence. Storage Temperature Ts -40 85 C Avoid storage in humid environments. Above mentioned are the main characteristical data of this new series. Unless specified differently, all data refer to 25C environmental temperature. Detailed datasheets and further application notes and application kits are available. 8 www.optoelectronics.perkinelmer.com Photodiodes photodiodes Features * Low-cost visible and near-IR photodetector * Excellent linearity in output photocurrent over 7 to 9 decades of light intensity * Fast response times * Available in a wide range of packages including epoxy-coated, transfer-molded, cast, and hermetic packages, as well as in chip form or surface mounting technology * Low noise * Mechanically rugged, yet compact and lightweight * Available as duals, quads or as linear arrays * Usable with almost any visible or near-infrared light source such as solid state laser diodes, LEDs, neon, fluorescent, incandescent bulbs, lasers, flame sources, sunlight, etc. * Can be designed and tested to meet the requirements of your application Typical Applications * Fiber-optic communications * Instrumentation * High-speed switching * Spot position tracking and measurement * Photometry * Data transmission * UV light meters * Fluorescent light detection * Laser range finding * Barcode scanning * Laser safety scanning * Distance measurement Datasheets available upon request. Description PerkinElmer Optoelectronics offers a broad array of Silicon and InGaAs PIN and APDs. InGaAs Avalanche Photodiodes The high-quality InGaAs avalanche photodiodes (APDs) are packaged in hermetically sealed TO cans and ceramic blocks designed for the 900 to 1700 nm wavelength region. InGaAs PIN Photodiodes High-quality Indium Gallium Arsenide photodiodes designed for the 900 to 1700 nm wavelength region, these photodiodes are available in standard sizes ranging from 50 microns to 5 mm in diameter. Packages include ceramic submount, TO packages, and chip form. Silicon Avalanche Photodiodes These are reliable, high-quality detectors in hermetically sealed TO packages designed for high-speed and high-gain applications. A "reach-through" structure is utilized which provides very low noise performance at high gains and a full range of active areas. Silicon PIN Photodiodes Offered for low- to high-speed applications, these PINs are designed for the 250 nm to 1100 nm range. Standard sizes range from 100 microns to 10 mm in diameter. Silicon PN Photodiodes This format includes a variety of high-volume, low-cost silicon photodiodes that meet the demanding requirements of today's commercial and consumer markets. Selective Photodiodes These GaP and GaAIAs-based photodiodes provide high sensitivity and a narrow spectral response without additional filtering. As SMD components they are ready for automated treatment. Alternate Source/Second Source Photodiodes PerkinElmer's nearest equivalent devices are selected on the basis of general similarity of electro-optical characteristics and mechanical configuration. Interchangeability in any particular application is not guaranteed, suitability should be determined by the customer's own evaluation. Detector Modules Preamplifier modules are hybrid devices with a photodiode and a matching amplifier in a compact hermetic TO package. An integral amplifier allows for better ease of use and noise bandwidth performance. 14-pin, DIL, and/or fibered packaged modules are available on a custom basis. All photodiodes are RoHS compliant. www.optoelectronics.perkinelmer.com 9 photodiodes InGaAs APDs--900 nm to 1700 nm Technical Specification Part Number Standard Package Photo Sens. Resp. Dark Spect. Noise Cap. Bandwidth NEP @ VOP Diam. A/W Curr. Curr. Dens. @100 kHz GHz 1550 nm for Hz) Cd (pF) into 50 W pW/ Hz Gain=10 V m @1300 nm @1550 nm Id (nA) In (pA/ C30645EH TO window 80 8.4 9.4 10 0.25 1.2 1 0.13 40-70 C30645ECERH Ceramic 80 8.4 9.4 10 0.25 1 1 0.13 40-70 C30662EH TO window 200 8.4 9.4 50 1 2.5 0.2 0.15 40-70 C30662ECERH Ceramic 200 8.4 9.4 50 1 2.5 0.2 0.15 40-70 Test conditions: T = 22C Indium Gallium Arsenide PIN Photodiodes, Large-Area, and Small-Area Indium Gallium Arsenide APDs * High responsivity * Low capacitance for high bandwidths * Available in various hermetic packages InGaAs PIN Large-Area--900 nm to 1700 nm Technical Specification Part Number Standard Package Photo Sens. Resp. Dark NEP @ Cap. Bandwidth Max. Power Bias Volt Diam. A/W Curr. 1300 nm @100 kHz MHz for .15 dB for These Hz Cd (pF) into 50 W Linearity (dBm) Specs V mm @850 nm @1300 nm @1550 nm Id (nA) pW/ C30619GH TO-18 0.5 0.2 0.86 0.95 5 <0.1 8 350 >+13 5 C30641GH TO-18 1 0.2 0.86 0.95 5 <0.1 40 75 >+13 2 C30642GH TO-5 2 0.2 0.86 0.95 10 0.1 350 20 +11 0 C30665GH TO-5 3 0.2 0.86 0.95 25 0.2 1000 3 +11 0 C30723GH TO-8 5 0.2 0.86 0.95 30 0.3 2500 2.5 +11 0 Test conditions: T = 22C InGaAs PIN Small-Area--900 nm to 1700 nm Technical Specification Part Number Standard Package Photo Sens. Resp. Dark Spect. Noise Cap. Bandwidth NEP @ Bias Volt Diam. A/W Curr. Curr. Dens. @100 kHz GHz 1550 nm for These Hz) Hz Specs V m @1300 nm @1550 nm Id (nA) In (pA/ Cd (pF) into 50 pW/ Ceramic 50 0.86 0.95 0.5 <0.02 0.35 >3.5 <0.02 C30637ECERH Ceramic 75 0.86 0.95 0.8 <0.02 0.4 3.5 <0.02 5 5 C30617ECERH Ceramic 100 0.86 0.95 1 <0.02 0.55 3.5 <0.02 5 C30617BH Ball lens 100 0.8 0.9 1 <0.02 0.8 3.5 <0.02 5 C30618ECERH Ceramic 350 0.86 0.95 2 0.02 4 0.8 0.02 5 C30618GH TO window 350 0.86 0.95 2 0.02 4 0.8 0.02 5 Active Area (mm2) Sensitivity (A/W) Rise/Fall Time tr/tf (us) Spectral Range @0.5 max. (nm) Test conditions: T = 22C Selective Photodiodes Based on III-V Materials Technical Specification Selective Photodiode SR10SPD 470-0.9 * Surface mounting device * High sensitivity * Narrow spectral response without additional filtering 10 Part Number Package* Reverse Voltage (V) SR10SPD 470-0.9 SMD (A3) 10 0.03 0.7 0.18 N/A 425-585 SR10SPD 525-0.9 SMD (A3) 5 0.005 0.73 0.25 N/A 480-560 SR10SPD 660-0.9 SMD (A3) 10 0.04 0.62 0.42 0.027 620-700 SR10SPD 880-0.9 SMD (A3) 5 0.001 0.73 0.25 N/A 820-935 * All packages are listed on our website. www.optoelectronics.perkinelmer.com Dark Current (nA) Photodiodes Si APD--Standard Types-400 nm to 1100 nm Technical Specification Part Number Photo Standard Sens. Diam. Package mm Resp. 900 nm A/W Dark Curr. Id (nA) Spect. Noise Cap. Resp. Curr. Dens. @100 kHz: Time Hz) In (pA/ Cd (pF) tr (ns) NEP @ 900 nm Hz fW/ VOP Range V C30817EH TO-5 0.8 75 50 0.5 2 2 7 275-425 C30872EH TO-8 3 45 100 0.5 10 2 11 275-425 C30902EH TO-18 0.5 77 (@ 830 nm) 15 0.2 1.6 0.5 3 (@ 830 nm) 180-250 C30902SH TO-18 0.5 128 (@ 830 nm) 15 0.1 1.6 0.5 0.86 (@ 830 nm) 180-250 C30916EH TO-5 1.5 70 100 0.5 3 2 8 275-425 NEP Hz fW/ VOP Range V Test conditions: T = 22C Silicon Avalanche Photodiodes * Hermetically sealed packages Si APD--Arrays Quadrant and Linear-400 nm to 1100 nm Technical Specification Part Number Photo Standard Sens. Diam. Package mm Resp. A/W Dark Curr. Id (nA) Spect. Noise Curr. Dens. Hz) In (pA/ Cap. Resp. @100 kHz Time Cd (pF) tr (ns) C30927EH-01 TO-8 1.5 total 15 (@ 1060 nm) 25 0.5 1 3 C30927EH-02 TO-8 1.5 total 62 (@ 900 nm) 25 0.5 1 3 8 (@ 900 nm) 275-425 C30927EH-03 TO-8 1.5 total 55 (@ 830 nm) 25 0.5 1 3 9 (@ 830 nm) 275-425 C30985EH Custom 0.3 pitch 31 (@ 830 nm) 1 0.1 0.5 2 3 (@ 830 nm) 250-425 NEP @ 900 nm Hz fW/ VOP Range V 33 (@ 1060 nm) 275-425 Test conditions: T = 22C Si APD--Low Cost, High Volume-400 nm to 1000 nm Technical Specification Part Number Photo Resp. Standard Sens. Diam. @900 nm Package mm A/W Dark Spect. Noise Cap. Resp. Curr. Curr. Dens. @100 kHz Time Hz) Cd (pF) Id (nA) In (pA/ tr (ns) C30724EH TO-18 0.5 9 (@ M=15) 25 0.1 1 5 11 120-200 C30724PH Plastic 0.5 9 (@ M=15) 25 0.1 1 5 11 120-200 C30737EH -500 TO-18 0.5 47 (@ I-800 nm M=100) 20 0.3 2.5 0.3 6.4 (@ 800 nm 120-200 M=100) Test conditions: T = 22C Si APD--TE-Cooled Technical Specification Photo Resp. Sens. Diam. @830 nm mm A/W Dark Spect. Noise Cap. Resp. Curr. Curr. Dens. @100 kHz Time Hz) Cd (pF) tr (ns) Id (nA) In (pA/ NEP @ 830 nm Hz fW/ ADP VOP Range V Part Number Standard Package C30902SH-TC TO-66 0.5 128 2 0.04 1.6 0.5 0.3 160-250 C30902SH-DTC TO-66 0.5 128 1 0.02 1.6 0.5 0.16 160-250 Test conditions: T = 0C for -TC and -20C for -DTC ADP VOP Range: temperature dependent www.optoelectronics.perkinelmer.com 11 photodiodes Si APD--NIR-Enhanced-400 nm to 1100 nm Technical Specification Photo Resp. Sens. Diam. @1060 nm mm A/W Dark Spect. Noise Cap. Resp. NEP @ Curr. Curr. Dens. @100 kHz Time 900 nm m=15 Hz) Cd (pF) tr (ns) Hz Id (nA) In (pA/ fW/ VOP Range V Part Number Standard Package C30954EH TO-5 0.8 36 50 0.5 2 2 14 C30955EH TO-5 1.5 34 100 0.5 3 2 15 275-425 C30956EH TO-8 3 25 100 0.5 10 2 20 275-425 NEP @ 830 nm Hz fW/ VOP Range V 275-425 Test conditions: T = 22C Si APD--Lightpipe Silicon Avalanche Photodiodes * Low cost, high volume Technical Specification Photo Resp. Sens. Diam. @830 nm mm A/W Dark Spect. Noise Cap. Resp. Curr. Curr. Dens. @100 kHz Time Hz) Cd (pF) tr (ns) Id (nA) In (pA/ Part Number Standard Package C30921EH TO-18 0.5 77 15 0.23 1.6 0.5 3 180-250 C30921SH TO-18 0.5 128 15 0.11 1.6 0.5 0.86 180-250 Test conditions: T = 22C Si APD--Radiation Detection Technical Specification Photo Sens. Diam. mm Resp. A/W Dark Curr. Id (nA) Spect. Noise Curr. Dens. Hz) In (pA/ C30626FH 5x5 22 (@900 nm) 250 C30703FH 10x10 16 (@530 nm) 10 Part Number Test conditions: T = 22C 12 www.optoelectronics.perkinelmer.com Cap. @100 kHz Cd (pF) Resp. Time tr (ns) NEP @ Peak Hz fW/ VOP Range V 0.5 30 5 23 (@900 nm) 275-425 0.7 120 5 40 (@530 nm) 275-425 Photodiodes Si PINs--Window and Lightpipe Packages, Fast Response-400 nm to 1100 nm Technical Specification Part Number Standard Package C30971EH TO-18 Photo Resp. Dark Sens. Diam. @830 nm Curr. Id mm A/W nA 0.5 0.5 Spect. Noise Cap. Curr. Dens. @100 kHz Hz) In (fA/ Cd (pF) 10 57 Resp. Time tr (ns) NEP @ 830 nm Hz fW/ Bias Volt for These Specs V 1.6 0.5 113 100 NEP @ 900 nm Hz fW/ Bias Volt for These Specs V Test conditions: T = 22C Si PINs--Large Area, Fast Response-400 nm to 1100 nm Technical Specification Silicon PIN Photodiodes and Modules * Broad range of photosensitive areas * Low operating voltage * Hermetically sealed packages * SMD-devices Photo Resp. Sens. Diam. @900 nm mm A/W Part Number Standard Package FFD-100H TO-5 2.5 FFD-200H TO-8 5.1 Dark Curr. Id nA Spect. Noise Curr. Dens. Hz) (fA/ Cap. @100 kHz Cd (pF) Resp. Time tr (ns) 0.58 2 25 8.5 3.5 44 15 0.58 4 36 30 5 62 15 Resp. Time tr (ns) NEP @ 900 nm Hz fW/ Bias Volt for These Specs V Test conditions: T = 22C Si PINs--Quadrant-220 nm to 1100 nm Technical Specification Part Number Standard Package Photo Sens. Diam. total mm Resp. @900 nm A/W Dark Curr. Id nA Spect. Noise Cap. Curr. Dens. @100 kHz Hz) In (fA/ Cd (pF) C30845EH TO-5 8 0.6 7 47 8 6 79 45 YAG-444-4AH Custom 11.4 0.4 @1.06 m 40 118 9 25 295 180 NEP @ 900 nm Hz fW/ Bias Volt for These Specs V Test conditions: T = 22C Si PINs--Standard N-Type-400 nm to 1100 nm Technical Specification Si PIN - Surface Mounting Device CFD10 * Large radiant sensitivity area Photo Sens. Diam. mm Resp. @900 nm A/W Dark Curr. Id nA Spect. Noise Cap. Curr. Dens. @100 kHz Hz) In (fA/ Cd (pF) Resp. Time tr (ns) Part Number Standard Package C30807EH TO-18 1 0.6 1 18 2.5 3 30 45 C30808EH TO-5 2.5 0.6 3 31 6 5 52 45 C30822EH TO-8 5 0.6 5 40 17 7 67 45 C30809EH TO-8 8 0.6 7 47 35 10 79 45 C30810EH Custom 11.4 0.6 30 98 70 12 163 45 Test conditions: T = 22C Si PIN-Diodes--Surface Mounting Devices Technical Specification Part Number CR50DE * Solid state ceramic chip * High thermal conductivity * Special type (CR50DE-DLF) with daylight filter on request Package* Reverse Voltage (V) Dark Current (nA) Active Area (mm2) Sensitivity (A/W) Rise/Fall Time tr/tf (us) Capacitance (pf) PFD10 SMD (D) 32 5 6.71 0.6 200 25 CR10DE Ceramic SMD (A1) 50 0.5 0.31 0.5 3 2.5 CR50DE Ceramic SMD (A2) 50 0.5 0.31 0.5 3 2.5 SR10BP SMD (A3) 170 10 0.65 N/A 10 10 SR10BP-B SMD (A3) 170 10 0.65 N/A 10 10 * All packages are listed on our website. www.optoelectronics.perkinelmer.com 13 photodiodes Si PINs--UV Enhanced, Low Noise-220 nm to 1100 nm Technical Specification Photo Sens. Diam. mm Resp. A/W @250 nm @900 nm Part Number Standard Package UV-040BQH TO-8 1 0.12 UV-100BQH TO-8 2.5 0.12 UV-215BQH TO-8 5.4 0.12 UV-245BQH TO-8 4.4x4.7 0.12 Shunt Resis. Rd MW Spect. Noise Curr. Dens.: Hz) In (fW/ Cap. @100 kHz: Cd (pF) NEP @ 900 nm Hz fA/ 0.58 2000 0.58 1000 3 25 5 4 120 0.58 7 250 8 450 25 0.58 375 7 375 20 Test conditions: T = 22C Silicon PINs--UV Enhanced Si PIN Modules--Low Bandwidth-1 kHz to 50 kHz Technical Specification Photo Sens. Diam. mm Resp. MV/W @250 nm @900 nm Spect. Noise Volt. Dens. Hz) Vn (V/ NEP @ 900 nm Hz pW/ Bandwidth kHz into 50 W Bias Volt for These Specs V Part Number Standard Package HUV-2000BH Custom 5.4 24 116 2.5 0.02 2 0 HUV-1100BGH TO-5 2.5 24 116 20 0.17 20 0 Test conditions: T = 22C Si PIN & APD Modules--High Bandwidth-40 MHz to 100 MHz Technical Specification PIN Photo Sens. or APD Standard Diam. Used Package mm Part Number Resp. @900 nm kV/W Lin.Volt. Spect. Noise Out. Swing Volt. Dens. Hz) (V) 50 Vn (nV/ NEP Bandwidth Photo. Diod. @900 nm MHz (3 dB, Bias Hz into 50 ) pW/ Volt V C30608EH C30971 (Si PIN) P 0.5 32 (@ 830 nm) 0.7 60 1.8 (@ 830 nm) 50 12 C30950EH C30817 (Si APD) L 0.8 560 0.7 20 0.036 50 275-425 C30817 (Si APD) N 0.8 1000 0.7 25 0.025 40 275-425 C30919EH (temp. compens.) Typical Characteristics @ T = 22C Si InGaAs APD Modules--High Bandwidth-50 MHz to 200 MHz Technical Specification APD Chip C30659900-R5BH C30902E (Si APD) 900 L 0.5 400 0.7 15 40 200 180-260 C30659900-R8AH C30817E (Si APD) 900 L 0.8 3000 0.7 35 12 50 275-435 C306591060-R8BH C30954E (Si APD) 1060 L 0.8 200 0.7 20 100 200 275-425 C306591060-3AH C30956E (Si APD) 1060 L 3 280 0.7 25 90 50 275-425 C30659C30645E 1550 1550-R08BH (InGaAs APD) L 0.08 90 0.7 20 220 200 40-70 C30659C30662E 1550 1550-R2AH (InGaAs APD) L 0.2 340 0.7 45 130 50 40-70 Optimum Standard Resp. Package Typical Characteristics @ T = 22C, 50 load 14 Bandwidth Photo. Diod. Photo Sens. Resp. @ Lin. Volt. Spect. Noise Diam. of APD Out Volt. Dens. NEP @ MHz Bias Hz) fW/ Hz mm (kv/W) Swing (V) Vn (nV/ (-3 dB) Volt V Part Number www.optoelectronics.perkinelmer.com Photodiodes Silicon PN--VTS Series (Low Capacitance, Large Area) Technical Specification Part Number I sc mA TC I sc %/C ID nA TC I D %/C R SH M CJ nF SR A/W Re A/(W/cm2) t R /t F sec V oc V TC V oc Active Area mV/C mm2 VTS__80H 3 0.2 200 +11 0.3 7.5 0.2 0.7 13 0.45 -2.6 392 VTS__81H 1.5 0.2 100 +11 0.6 3.5 0.2 0.34 6.4 0.45 -2.6 187 VTS__82H 0.69 0.2 50 +11 1.2 1.75 0.2 0.16 3.4 0.45 -2.6 93 VTS__83H 0.64 0.2 50 +11 1.2 1.75 0.2 0.15 3.4 0.45 -2.6 85 VTS__84H 0.33 0.2 40 +11 1.5 1 0.2 0.07 1.8 0.45 -2.6 42 VTS__85H 0.16 0.2 20 +11 3 0.5 0.2 0.04 1.2 0.45 -2.6 21 VTS__86H 0.080 0.2 10 +11 6 0.25 0.2 0.02 0.75 0.45 -2.6 10 Electro-optical characteristics @ 25C Silicon PN Photodiodes Table Key VTS Series ISC TC ISC ID TC ID RSH CJ SR RE tR/tR VOC TC VOC Short-Circuit Current H=1000 lux, 2850 K ISC Temperature Coefficient H=1000 lux, 2850 K Dark Current H=0, VR=100 mV ID Temperature Coefficient H=0, VR=100 mV Shunt Resistance H=0, VR=10 mV Junction Capacitance H=0, V=0 V, 1 MHz Sensitivity @ 400 nm Responsivity 400 nm, 0.18 A/W Rise/Fall Time @ 1 K load VR=1 V, 830 nm Open-Circuit Voltage H=1000 lux, 2850 K VOC Temperature Coefficient H=1000 lux, 2850 K Silicon PN - VTA Series Arrays Technical Specification Part Number Elements Active Area mm2 VTA1264H 64 1.4097 Pitch mm IL Uniformity ID nA max. 2.12 1.5 (max./min.) 0.09 CJ pF SR A/W range nm p nm 200 max. 0.3 min. 300-1100 925 Electro-optical characteristics @ 25C Table Key VTA Series Arrays 550 nm, 30 nW/cm2 IL uniformity SR 550 nm H=0, VR=0 CJ H=0, VR= 10 mV ID Active Area Per Element www.optoelectronics.perkinelmer.com 15 photodiodes Silicon PN--VTP Series (Fast Response, High Dark Resistance) Technical Specification Part Number I sc A TC I sc %/C V oc mV TC V oc mV/C ID nA max. R SH G CJ pF Re A/(W/cm2) SR A/W range nm p nm V BR V Package Active Area mm2 VTP100H 55 0.24 300 -2 30 0.25 50 max. 0.047 0.5 725-1150 925 140 Flat Sidelooker IRT 7.45 VTP100CH 70 0.2 350 -2 30 0.25 50 max. 0.05 0.55 400-1150 925 140 Flat Sidelooker 7.45 VTP1012H 17 0.2 350 -2 7 0.5 6 max. 0.011 0.55 400-1150 925 140 TO-46 1.6 VTP1112H 90 0.2 350 -2 7 0.5 6 max. 0.033 0.55 400-1150 925 140 TO-46 Lensed 1.6 VTP1188SH 200 0.2 330 -2 30 67 180 -- 0.55 400-1100 925 -- Lensed Ceramic 11 VTP1220FBH 0.7 min. 0.2 280 -2 10 -- 18 max. -- 0.27 400-725 550 140 T1-3/4 flat IRB 1.219 2.326 VTP1232H 100 min. 0.2 420 min. -2 25 -- 180 max. 0.076 0.6 400-1100 920 -- T1-3/4 VTP1232FH 21 min. 0.2 420 -2 25 -- 180 max. -- 0.6 400-1100 920 -- T1-3/4 flat 2.326 VTP1332H 75 min. 0.2 420 -2 25 -- 180 max. -- 0.55 725-1150 920 -- T1-3/4 IRT 2.326 VTP1332FH 17 min. 0.2 420 -2 25 -- 180 max. -- 0.55 725-1150 920 -- T1-3/4 flat IRT 2.326 VTP3310LAH 36 0.2 350 -2 35 10 25 max. 0.015 0.55 400-1150 925 140 T1 0.684 VTP3410LAH 22 0.26 350 -2 35 10 25 max. 0.013 0.55 700-1150 925 140 T1 IRT 0.684 VTP413H 120 0.2 350 -2 30 0.25 50 max. 0.078 0.55 400-1150 925 140 Lensed sidelooker 7.45 VTP4085H 200 0.2 330 -2 100 2 350 -- 0.55 400-1100 925 -- Ceramic 21 VTP4085SH 200 0.2 330 -2 50 4 350 -- 0.55 400-1100 925 -- Ceramic 21 VTP5050H 70 0.2 350 -2 18 0.25 24 max. 0.05 0.55 400-1150 925 140 TO-5 7.45 VTP6060H 200 0.2 350 -2 35 100 60 max. 0.14 0.55 400-1150 925 140 TO-8 20.6 VTP7110H 9 0.2 350 -2 35 7 25 max. 0.015 0.55 400-1150 925 140 Lateral 0.684 VTP7210H 7 0.26 350 -2 35 7 25 max. 0.015 0.55 700-1150 925 140 Lateral IRT 0.684 VTP7840H 70 0.2 325 -2 20 0.25 40 max. -- 0.55 725-1150 925 1@10 mA Lensed Sidelooker IRT 5.27 VTP8350H 80 0.2 350 -2 30 100 50 max. 0.06 0.55 400-1150 925 140 Ceramic 7.45 VTP8440H 55 0.2 350 -2 15 0.5 15 max. 0.025 0.55 400-1150 925 140 8 mm Ceramic 5.16 VTP8551H 70 0.2 350 -2 30 0.15 50 max. 0.05 0.55 400-1150 925 140 Mini-DIP 7.45 VTP8651H 55 0.24 300 -2 30 0.15 50 max. 0.045 0.5 725-1150 925 140 Mini-DIP IRT 7.45 VTP8740__TRH 90 0.2 325 min. -2 20 0.25 50 max. -- 0.6 400-1150 925 33 min. SMT Clear plastic 5.269 VTP8840__TRH 60 0.5 325 min. -2 20 0.25 50 max. -- 0.6 725-1150 925 33 min. SMT IRT 5.269 VTP9412H 17 0.2 350 -2 7 0.4 6 max. 0.011 0.55 400-1150 925 140 6 mm Ceramic 1.6 Electro-optical characteristics @ 25C Table Key VTP Series ISC TC ISC VOC TC VOC ID RSH CJ RE SR range p VBR IRT IRB 16 Short-Circuit Current H=100 fc, 2850 K ISC Temperature Coefficient, 2850 K Open-Circuit Voltage H=100 fc, 2850 K VOC Temperature Coefficient, 2850 K Dark Current H=0, VR=10, 50, 100 V Shunt Resistance H=0, V=10 mV Junction Capacitance H=0, V=0, 3, 15 V Responsivity 880-940 nm Sensitivity @ Peak Spectral Application Range Spectral Response @ Peak Breakdown Voltage Infrared Transmitting Infrared Blocking www.optoelectronics.perkinelmer.com Photodiodes Silicon PN--VTD Series (Alternate Source/Second Source) Technical Specification t R /t F nsec SR A/W range nm p nm 500 max. -- 0.55 400-1150 860 60 50 0.6 400-1100 900 30 60 50 0.6 725-1150 940 40 min. Mini DIP IRT 7.45 30 25 50 0.6 400-1100 900 50 SMT 7.45 -2 30 80 max. 50 0.6 725-1150 940 40 min. SMT IRT 7.45 -2.6 30. 72 20 0.6 800-1100 925 50 TO-92 IRT (Round Lens) 7.41 -2.6 30 72 20 0.6 400-1100 925 50 TO-92 (Round Lens) 7.41 350 -2.6 30 72 20 0.6 750-1100 925 50 TO-92 IRT (Flat Lens) 7.41 0.2 365 -2.6 30 72 20 0.6 400-1100 925 50 TO-92 (Flat Lens) 7.41 -- -- -- 10 70 15 0.6 400-1100 960 -- Black Ceramic 84.64 Part Number I sc A TC I sc %/C V oc mV VTD31AAH 150-225 0.2 350 VTD34H 70 0.2 365 VTD34FH -- -- 350 VTD34SMH 70 0.2 365 VTD34FSMH 55 -- 350 VTD205H 25 0.2 350 VTD205KH 80 0.2 365 VTD206H 25 0.2 VTD206KH 80 VTH2090H 800 TC V oc mV/C ID nA max. CJ pF -2 50 -2 30 -2 -2 V BR V Package Active Area mm2 5 min. Ceramic 16.73 40 min. Mini DIP 7.45 Electro-optical characteristics @ 25C Table Key VTD Series / VTB Series ISC TC ISC VOC TC VOC ID Short-Circuit Current 940 nm, H=0.5 mW/cm2 (VTD205, VTD206) H=5 mW/cm2, 2850 K (VTD31AA, VTB Series) 100 Lux, 2850 K (VTD34, VTD205K) 100 Lux, 2856 K (VTD206K) ISC Temperature Coefficient 2850 K (VTD31AA, VTD34, VTD34F, VTB Series) 2856 K (VTD205, VTD205K, VTD206, VTD206K) Open-Circuit Voltage 940 nm, H=0.5 mW/cm2 (VTD 205, VTD205K, VTD206, VTD206K) 2850 K (VTD31AA, VTD34, VTD34F) VOC Temperature Coefficient 2850 K (VTD31AA, VTD34, VTD34F, VTB Series) 2856 K (VTD205, VTD205K, VTD206, VTD206K) Dark Current H=0, VR=2 V (VTB Series) H=0, VR=10 V (VTD34, VTD34F, VTD205, VTD205K, VTD206, VTD206K, VTB100) RSH TC RSH CJ H=0, VR=15 V (VTD31AA) Shunt Resistance H=0, V=10 mV (VTB Series) RSH Temperature Coefficient H=0, V=10 mV (VTB Series) Junction Capacitance H=0, VR=0 V, 1 MHz (VTD205, VTD205K, VTD206, VTD206K) tR/tR @ 1 MHz, VR=0 V (VTD34, VTD34F) H=0, V=0 V (VTD31AA, VTB Series) Rise/Fall Time @ RL=50 , VR=5 V, 850 nm (VTD205, VTD205K, VTD206, VTD206K) @ RL=1 k Lead, VR=10 V, 833 nm (VTD34, VTD34F) SR range p VBR Sensitivity @ Peak 365 nm (VTB Series) Spectral Application Range Spectral Response @ Peak Breakdown Voltage www.optoelectronics.perkinelmer.com 17 Photodiodes photodiodes Silicon PN--VTB Series (Blue Enhanced, Ultra High Dark Resistance) Technical Specification Part Number I sc A TC I sc %/C V oc mV TC V oc mV/C ID pA max. R SH G TC R SH %/C CJ nF SR A/W range nm p nm V BR V Package Active Area mm2 VTB100H 65 0.12 490 -2 500 1.4 -8 2 max. 0.1 320-1100 920 40 Flat Sidelooker 7.45 VTB1012H 13 0.12 490 -2 100 0.25 -8 0.31 0.09 320-1100 920 40 TO-46 1.60 VTB1012BH 1.3 0.02 420 -2 100 0.25 -8 0.31 -- 330-720 580 40 TO-46 IRB 1.60 VTB1013H 13 0.12 490 -2 20 7 -8 0.31 0.09 320-1100 920 40 TO-46 1.60 VTB1013BH 1.3 0.02 420 -2 20 7 -8 0.31 -- 330-720 580 40 TO-46 IRB 1.60 VTB1112H 60 0.12 490 -2 100 0.25 -8 0.31 0.19 320-1100 920 40 TO-46 Lensed 1.60 VTB1112BH 6 0.02 420 -2 100 0.25 -8 0.31 -- 330-720 580 40 TO-46 IRB Lensed 1.60 VTB1113H 60 0.12 490 -2 20 7 -8 0.31 0.19 320-1100 920 40 TO-46 Lensed 1.60 VTB1113BH 6 0.02 420 -2 20 7 -8 0.31 -- 330-720 580 40 TO-46 IRB Lensed 1.60 VTB4051H 200 0.12 490 -2 250 0.56 -8 3 0.1 320-1100 920 40 Ceramic 14.8 VTB5051H 130 0.12 490 -2 250 0.56 -8 3 0.1 320-1100 920 40 TO-5 14.8 VTB5051BH 13 0.02 420 -2 250 0.56 -8 3 -- 330-720 580 40 TO-5 IRB 14.8 VTB5051JH 130 0.12 490 -2 250 0.56 -8 3 0.1 320-1100 920 40 TO-5 14.8 14.8 VTB5051UVH 130 0.12 490 -2 250 0.56 -8 3 0.1 200-1100 920 40 TO-5 VTB5051UVJH 130 0.12 490 -2 250 0.56 -8 3 0.1 200-1100 920 40 TO-5 14.8 VTB6061H 350 0.12 490 -2 2000 0.1 -8 8 0.1 320-1100 920 40 TO-8 37.7 VTB6061BH 35 0.02 420 -2 2000 0.1 -8 8 -- 330-720 580 40 TO-8 IRB 37.7 VTB6061CIEH 12 -- -- -- 2000 0.1 -8 8 -- 475-650 555 -- TO-8 37.7 VTB6061JH 350 0.12 490 -2 2000 0.1 -8 8 0.1 320-1100 920 40 TO-8 37.7 VTB6061UVH 350 0.12 490 -2 2000 0.1 -8 8 0.1 200-1100 920 40 TO-8 37.7 VTB6061UVJH 350 0.12 490 -2 2000 0.1 -8 8 0.1 200-1100 920 40 TO-8 37.7 VTB8341H 60 0.12 490 -2 100 1.4 -8 1 0.1 320-1100 920 40 Ceramic 5.16 18 VTB8440H 45 0.12 490 -2 2000 0.07 -8 1 0.1 320-1100 920 40 8 mm Ceramic 5.16 VTB8440BH 5 0.02 420 -2 2000 0.07 -8 1 -- 330-720 580 40 8 mm Ceramic IRB 5.16 VTB8441H 45 0.12 490 -2 100 1.4 -8 1 0.1 320-1100 920 40 8 mm Ceramic 5.16 VTB8441BH 5 0.02 420 -2 100 1.4 -8 1 -- 330-720 580 40 8 mm Ceramic IRB 5.16 VTB9412H 13 0.12 490 -2 100 0.25 -8 0.31 0.09 320-1100 920 40 6 mm Ceramic 1.60 VTB9412BH 1.3 0.02 420 -2 100 0.25 -8 0.31 -- 330-720 580 40 6 mm Ceramic IRB 1.60 VTB9413H 13 0.12 490 -2 20 7 -8 0.31 0.09 320-1100 920 40 6 mm Ceramic 1.60 VTB9413BH 1.3 0.02 420 -2 20 7 -8 0.31 -- 330-720 580 40 6 mm Ceramic IRB 1.60 www.optoelectronics.perkinelmer.com Phototransistors phototransistors Features * Low-cost visible and near-IR photodetection * Available with gains from 100 to over 1500 * Moderately fast response times * Available in a wide range of packages including epoxy-coated, transfer-molded, cast, hermetic packages, chip form and surface mounting technology * Usable with almost any visible or near-infrared light source such as IREDs, neon, fluorescent, incandescent bulbs, lasers, flame sources, sunlight, etc. * Same general electrical characteristics as familiar signal transistors Typical Applications * Computer/business equipment * Write-protect control * Margin controls--printers * Industrial * LED light source--light pens * Security systems * Safety shields * Consumer * Coin counters * Lottery card readers * Position sensors--joysticks * Remote controllers--toys, appliances, audio/visual equipment * Games--laser tag * Camera shutter control Principle of Operation Phototransistors are solid-state light detectors that possess internal gain. They can be used to provide either an analog or digital output signal. Description Phototransistors are photodiode-amplifier combinations integrated within a single silicon chip. These are combined to overcome the major fault of photodiodes: unity gain. Many applications demand a greater output signal from the photodetector than can be generated by a photodiode alone. While the signal from a photodiode can always be amplified through use of an external op-amp or other circuitry, this approach is often not as practical or as cost-effective as the use of phototransistors. The phototransistor can be viewed as a photodiode whose output photocurrent is fed into the base of a conventional small-signal transistor. While not required for operation of the device as a photodetector, a base connection is often provided, allowing the designer the option of using base current to bias the transistor. The typical gain of a phototransistor can range from 100 to over 1500. Phototransistors can be used as ambient-light detectors. When used with a controllable light source, typically an IRED, they are often employed as the detector element for optoisolators and transmissive or reflective optical switches. All phototransistors are RoHS compliant. Absolute Maximum Ratings Maximum Temperatures -25C to 80C (CR10TE, CR50TE) Storage and Operating: -40C to 100C -40C to 110C (VTT1015, VTT1016, VTT1017, VTT1115, VTT1116, and VTT1117) -40C to 85C (VTT7222, VTT7223, VTT7225, VTT7122, VTT7123, and VTT7125) -40C to 70C (VTT9002, VTT9003, VTT9102, and VTT9103) Continuous Power Dissipation: 50 mW 100 mW (VTT9002, VTT9003, VTT9102, and VTT9103) 200 mW (CR10TE, CR50TE) 250 mW (VTT1015, VTT1016, VTT1017, VTT1115, VTT1116, and VTT1117) Derate above 30C: 0.71 mW/C 2.5 mW/C (VTT9002, VTT9003, VTT9102, and VTT9103) 3.12 mW/C (VTT1015, VTT1016, VTT1017, Datasheets available upon request. VTT1115, VTT1116, and VTT1117) 0.91 mW/C (VTT7122, VTT7123, VTT7125) Maximum Current: 25 mA 200 mA (VTT1015, VTT1016, VTT1017, VTT1115, VTT1116, and VTT1117) Lead-Soldering Temperature: 260C (1.6 mm from case, 5 sec. max.) www.optoelectronics.perkinelmer.com 19 phototransistors .025'' x .025'' NPN Phototransistors Technical Specification Part Number NPN Phototransistors 0.25", small area, high speed 0.04", medium area, high sensitivity 0.05", large area, high sensitivity Table Key IC ICEO VBR(CEO) VBR(ECO) VCE(SAT) tR/tF Light Current Dark Current H=0 Collector Breakdown IC=100 A, H=0 Emitter Breakdown IE=100 A, H=0 Saturation Voltage IC=1 mA, H=400 fc Rise/Fall Time IC=1 mA, RL=100 Light Current H fc (mW/cm2) mA min. V CE =5 V Dark Current nA V CE max. Volts V BR(CEO) Volts min. V BR(ECO) Volts min. V CE(SAT) Volts max. t R /t F sec, typ. Angular Response 1/2 VTT1222WH 1.9 100 (5) 10 20 50 6 0.25 2 40 VTT1223WH 1.5 100 (5) 10 20 40 6 0.25 3 40 VTT1225H 4 100 (5) 100 10 30 5 0.25 1.5 5 VTT1226H 7.5 100 (5) 100 10 30 5 0.25 3 5 VTT1227H 12 100 (5) 100 10 30 5 0.25 4 5 VTT1322WH 0.8 100 (5) 10 20 50 6 0.25 2 40 VTT1323WH 1 100 (5) 10 20 40 6 0.25 3 40 VTT3122EH 1.2 100 (5) 100 20 40 6 0.25 2.5 8 VTT3123EH 4 100 (5) 100 10 30 4 0.25 4 8 VTT3323LAH 2 20 (1) 100 10 30 5 0.25 3 10 VTT3324LAH 4 20 (1) 100 10 30 5 0.25 4 10 VTT3325LAH 6 20 (1) 100 10 30 5 0.25 5 10 VTT3423LAH 1 20 (1) 100 10 30 5 0.25 3 10 VTT3424LAH 2 20 (1) 100 10 30 5 0.25 4 10 VTT3425LAH 3 20 (1) 100 10 30 5 0.25 5 10 VTT7122H 1 100 (5) 100 10 30 5 0.25 2 36 VTT7123H 2 100 (5) 100 10 30 5 0.25 2 36 VTT7125H 4.5 100 (5) 100 10 30 5 0.25 2 36 VTT7222H 0.9 100 (5) 100 10 30 5 0.25 2 36 VTT7223H 1.8 100 (5) 100 10 30 5 0.25 2 36 VTT7225H 4 100 (5) 100 10 30 5 0.25 4 36 V BR(CEO) Volts min. V BR(ECO) Volts min. V CE(SAT) Volts max. t R /t F sec, typ. Angular Response 1/2 10 Electro-Optical Characteristics @ 25C Clear T- 1 3/4 (5 mm) Plastic Package VTT1212 VTT1223W VTT1227 VTT1214 VTT1225 VTT1222W VTT1226 IRT T-1 3/4 (5mm) Plastic Package VTT1322W VTT1312 VTT1323W VTT1314 .04'' x .04'' NPN Phototransistors Technical Specification Part Number Light Current H fc (mW/cm2) mA min. V CE =5 V Dark Current nA V CE max. Volts VTT1212H 2 20 (1) 100 10 30 5 0.25 4 VTT1214H 4 20 (1) 100 10 30 5 0.25 6 10 VTT1312H 1 20 (1) 100 10 30 5 0.25 4 10 Coax Hermetic (with case lead) VTT3122E VTT3123E VTT1314H 2.4 20 (1) 100 10 30 5 0.25 6 10 VTT9002H 2 100 (5) 100 10 30 6 0.55 4 50 Clear Long T- 1 (3 mm) Plastic Package VTT3323LA VTT3324LA VTT3325LA VTT9003H 5 100 (5) 100 10 30 6 0.55 6 50 VTT9102H 6 100 (5) 100 5 30 4 0.55 6 42 IRT Long T- 1 (3 mm) Plastic Package VTT3423LA VTT3424LA VTT3425LA VTT9103H 13 100 (5) 100 5 30 4 0.55 10 42 Electro-Optical Characteristics @ 25C Molded, Lensed Lateral Package VTT7122 VTT7123 VTT7125 IRT Molded, Lensed Lateral Package VTT7222 VTT7223 VTT7225 Clear Epoxy TO-106 Ceramic Package VTT9002 VTT9003 Epoxy Lensed TO-106 Ceramic Package VTT9102 VTT9103 20 www.optoelectronics.perkinelmer.com Phototransistors TO-46 Flat Window Package VTT1015 VTT1016 VTT1017 TO-46 Lensed Package VTT1115 VTT1116 .05'' x .05'' NPN Phototransistors Technical Specification Table Key IC ICEO VBR(CEO) VBR(ECO) VCE(SAT) tR/tF Light Current Dark Current H=0 Collector Breakdown IC=100 A, H=0 Emitter Breakdown IE=100 A, H=0 Saturation Voltage IC=1 mA, H=400 fc Rise/Fall Time IC=1 mA, RL=100 Light Current H fc (mW/cm2) mA min. V CE =5 V Part Number VTT1117 Dark Current nA V CE max. Volts V BR(CEO) Volts min. V BR(ECO) Volts min. V CE(SAT) Volts max. t R /t F sec, typ. Angular Response 1/2 VTT1015H 0.4 100 (5) 25 20 40 6 0.4 5 35 VTT1016H 1 100 (5) 25 20 30 6 0.4 5 35 VTT1017H 2.5 100 (5) 25 10 20 4 0.4 8 35 VTT1115H 1 20 (1) 100 10 30 6 0.4 5 15 VTT1116H 2 20 (1) 100 10 30 4 0.4 8 15 VTT1117H 4 20 (1) 100 10 30 4 0.4 8 15 Electro-Optical Characteristics @ 25C I Technical Specification Part Number CR10TE CR50TE Package* Ceramic Spectral Range Peak Sensitivity Wavelength Vce (nm) (V) P-Current Dark Current (nA) Active Area (mm2) Rise/Fall Time Orientation 400-1070 850 40 3 400 0.19 10/10 High Vce 400-1070 850 40 3 400 0.19 10/10 High Vce SMD (A1) Ceramic SMD (A2) * All packages are listed on our website. CR10TE * Surface mounting device * Solid state ceramic chip * High thermal conductivity * Special type (CR10TE-DLF) with daylight filter on request www.optoelectronics.perkinelmer.com 21 infrared switches Features * Contains no mechanical parts to wear out * Provides non-contact sensing of objects * Low power consumption, compatible with solid-state electronics * Low cost * Capable of sensing any opaque object * Small size * Custom mechanical configurations available * Can be specially selected or built to meet the requirements of your particular application Typical Applications * Printers and typewriters * Paper sensor * Paper-feed detector * Imprinting head position detector * Floppy disk drives * Track-zero sensor * Index sensor * Disk-in sensor * Vending machines * Coin sensor * Detection of goods * Mechanism position * Facsimiles * Original width detection * Initial position detection * Final position detection * Industrial * Rotational speed / position detection (encoder) * Distance detection * Object sensor * VHS / VHSC / 8 mm VCR * Tape start * Tape load * Tape end * Copiers * Paper-presence detection * Toner-density control * Paper-carrier detection Datasheets available upon request. 22 www.optoelectronics.perkinelmer.com Description PerkinElmer Optoelectronics' infrared switches are ideal for noncontact sensing applications. The emitter is generally an IR LED and the detector is either a phototransistor or a photodarlington. Optoswitches, Optical Hybrids, and Custom Optical Assemblies Optoswitches, optical hybrids, custom assemblies, photodiodes, phototransistors, IR emitters, and photoconductive cells are commonly used in industrial, commercial, and consumer electronics applications. This product line is one of the broadest in the industry and includes a variety of standard catalog products as well as custom design and manufacturing capabilities. Approximately 75% of the products shipped are custom designed and tested to serve the needs of specific OEM applications. Reflective Optoswitches Reflective optical switches combine an infrared-emitting diode (IRED) with an NPN phototransistor or photodarlington in a onepiece, sealed, IR-transmitting plastic case or ceramic SMD-package. Sealed construction improves resistance to moisture and debris. Units are available with PC-board mounting leads (VTR16D1), or 12-inch, #26 AWG flying leads (VTR17D1). Transmissive Optoswitches Interrupter-type optical switches combine an infrared-emitting diode (IRED) with an NPN phototransistor. Units are available in two different case styles; a one-piece, sealed, IR-transmitting plastic case (VTL11 and VTL13 series) and an opaque case (VTL23 series). Options also include apertures-over-detector and/or emitter, and either PC-board mount leads or 12-inch, #26 AWG leads (VTL13 only). All infrared switches are RoHS compliant. General Characteristics Parameter Symbol Conditions Input IRED Reverse Voltage VR IR=100 A 2 V min. Continuous Forward Current IF Output Detector Derate 0.73 mA/C 40 mA max. above 30C Forward Voltage Drop VF IF=20 mA Collector Breakdown Voltage VBR(CEO) IC=100 A 30 V min. Emitter Breakdown Voltage VBR(ECO) IC=100 A IE=100 A (VTR) 5 V min. 3 V min. (VTL23DxA) 4.5 V (CRS) Power Dissipation PD Derate 0.91 mW/C above 30C 50 mW max. 1.8 V max. (@ 25C unless otherwise noted) Absolute Maximum Ratings Maximum Temperatures -25C to 85C (CRS) Storage and Operating: -40C to 85C Lead-Soldering Temperature: 260C (1.6 mm from case, 5 sec. max.) Infrared Switches VTR Series Technical Specification Light Current, Ip Part Test Conditions VCE Volts d inches (mm) Number mA min. IF mA Output Element Detector Device 0.3 20 5 0.1 (2.5) 0.1 0 5 VTR17D1H 0.3 20 5 0.1 (2.5) 0.1 0 5 Phototransistor VTR24F1H 6.0 20 30 2.0 (50.8) -- -- -- Photodarlington The light current is measured using a 90% reflective surface at a specified distance. Transmissive Optoswitches VTL11d Series, VTL13D Series, VTL23DxA Series Dark Current Test Conditions IF mA VCE Volts VTR16D1H Specification Notes The case material is polysulfone and should be cleaned with alcohol or freon TF only. Avoid chlorinated hydrocarbons and solvents such as acetone or toluene, as damage may result. Infrared Interruptive Switches-- Reflective Optoswitches VTR Series A max. Phototransistor fluorescent lamp perpendicular to the sensing axis, the detector current will be typically 3 A. The same illumination concentric to the sensing axis will result in a detector current of 50 A. Equivalent light from an incandescent lamp will result in significantly greater currents. With the specified IRED forward current and no reflecting surface, the crosstalk is typically less than 3 A. The dark current is measured with the part totally shielded from ambient light. With 2150 lux (200 fc) from a cool white Accommodates most applications. VTL11D (P.C.B. Mount Leads), 13D (12 inch, #26 AWG Leads) Series Technical Specification Light Current, Ip Part Test Cond. Number mA min. IF mA VCE Volts Dark Current Test Cond. nA max. IF mA VCE Volts Saturation Volts Test Cond. Aperture Combination Volts max. IF mA IC mA Emitter Detector D1H 0.5 20 5 100 0 10 0.4 20 0.25 none none D1-20H 0.15 20 5 100 0 10 0.4 20 0.25 0.02" w none D3H 2 20 5 100 0 10 0.4 20 1.8 none none D3-20H 0.6 20 5 100 0 10 0.4 20 1.8 0.02" w none D5-20H 0.15 20 5 100 0 10 0.4 20 0.25 0.02" w 0.01" w D6-20H 0.075 20 5 100 0 10 0.4 20 0.25 0.02" w 0.005" w D7H 0.75 20 5 100 0 10 0.4 20 0.25 D7-20H 0.225 20 5 100 0 10 0.4 20 0.25 Specification Notes The dark current is measured with the part totally shielded from ambient light. With 2150 lux (200 fc) from a cool white fluorescent lamp perpendicular to the sensing axis, the detector current will be typically 3 A. Equivalent light from an incandescent lamp will result in significantly greater currents. none 0.02" w 0.02" w 0.02" w The case material is polysulfone and should be cleaned with alcohol or freon TF only. Avoid chlorinated hydrocarbons and solvents such as acetone or toluene, as damage may result. VTL11D7-20, VTL13D7-20, accommodate most applications. The other parts in this series are available only for specialized, high-volume applications The aperture used for these slotted switches are 0.04" (1.02 mm) high. VTL23DxA (P.C.B. Mount Leads) Series Technical Specification Light Current, Ip Part Test Cond. Number mA min. IF mA VCE Volts Dark Current Test Cond. nA max. IF mA VCE Volts Saturation Volts Test Cond. Volts max. I F mA I C mA Aperture Combination Emitter Detector VTL23D0A21H 0.2 20 10 100 0 10 0.4 20 0.1 VTL23D0A22H 0.2 20 10 100 0 10 0.4 20 0.1 0.02" w 0.02" w VTL23D1A00H 0.5 20 10 100 0 10 0.4 20 0.4 0.04" w 0.04" w VTL23D1A22H 0.5 20 10 100 0 10 0.4 20 0.4 0.02" w 0.02" w VTL23D2A00H 2.5 20 10 100 0 10 0.6 20 1.8 0.04" w 0.04" w VTL23D3A00H 1.0 10 10 100 0 10 0.4 10 0.8 0.04" w 0.04" w Specification Notes The dark current is measured with the part totally shielded from ambient light. 0.02" w 0.01" w and ketones. Methanol isopropanol alcohols are recommended as cleaning agents. VTL23D2A00 and VTL23D3A00 contains a visible lightblocking dust cover over the apertures. VTL23D1A22 accommodate most applications. The other parts in this series are available only for specialized, highvolume applications. The plastic case can be damaged by chlorinated hydrocarbons Aperture Length is 0.075" Technical Specification CRS20 * Surface mounting device * complete ceramic housing * High thermal conductivity Part Number CRS20 Package* Collector Emitter Breakdown (VCEO) Emitter Collector Breakdown (VECO) Dark Current ICEO (nA) Rise/Fall time tr/tf (ns) Forward Voltage VF (V) Forward Current IF (mA) Wavelength (nm) Ceramic SMD (H) 40 4.5 400 10 1.2-1.4 60 950 * All packages are listed on our website. www.optoelectronics.perkinelmer.com 23 photocells Features * Lowest-cost visible detector * Available in low-cost plasticencapsulated packages as well as hermetic packages (TO-46, TO-5, TO-8) * Responsive to both very low light levels (moonlight) and to very high light levels (direct sunlight) * Wide dynamic range: resistance changes of several orders of magnitude between "light" and "no light" * Low noise distortion * Maximum operating voltages of 50 to 400 Volts are suitable for operation on 120/240 VAC * Available in center-tap dual-cell configurations as well as specially selected resistance ranges for special applications * Easy to use in DC or AC circuits * Usable with almost any visible or near-infrared light source such as LEDS; neon; fluorescent, incandescent bulbs, lasers; flame sources; sunlight; etc. * Available in a wide range of resistance values Typical Analog Applications * Auto-focus for slide projector * Colorimetric test equipment * Densitometer * Electronic scales--dual-cell * Automated rear-view mirror Typical Digital Applications * Automatic headlight dimmer * Night light control * Oil burner flame out * Street light control * Absence/presence (beam breaker) * Position sensor Datasheets available upon request. 24 www.optoelectronics.perkinelmer.com Description Photocells or Light-Dependent Resistors can provide a very economical and technically superior solution for many applications where the presence or absence of light is sensed (digital operation) or where the intensity of light needs to be measured (analog operation). Semiconductor light detectors can be divided into two major categories: junction and bulk-effect devices. Junction devices, when operated in the photoconductive mode, utilize the reverse characteristic of a PN junction. Under reverse bias, the PN junction acts as a light-controlled current source. Output is proportional to incident illumination and is relatively independent of applied voltage. Silicon photodiodes are examples of this type of detector. In contrast, bulk-effect photoconductors have no junction. The bulk resistivity decreases with increasing illumination, allowing more photocurrent to flow. This resistive characteristic gives bulk-effect photoconductors a unique quality: signal current from the detector can be varied over a wide range by adjusting the applied voltage. To clearly make this distinction, PerkinElmer Optoelectronics refers to its bulk-effect photoconductors as photoconductive cells or, simply, photocells. Photocells are thin-film devices made by depositing a layer of a photoconductive material on a ceramic substrate. Metal contacts are evaporated over the surface of the photoconductor and external electrical connection is made to these contacts. These thin films of photoconductive material have a high sheet resistance. Therefore, the space between the two contacts is made narrow and interdigitated for low cell resistance at moderate light levels. Photocells VT Series Technical Specification Part Number VT Series Resistance (Ohms) Sensitivity (, typ.) Response Time @ 1fc Max. Volts ms, typ. 10 lux 2850 K 2 fc 2850 K Dark Material LOG (R10/R100) LOG (100/10) V, pk Rise (1-1/e) Fall (1/e) min. typ. max. typ. min. sec. Type VT20N1 8k 16 k 24 k 8k 200 k 5 0 0.8 100 78 8 VT20N2 16 k 34 k 52 k 17 k 500 k 5 0 0.8 100 78 8 VT20N3 36 k 72 k 108 k 36 k 1M 5 0 0.8 100 78 8 VT20N4 76 k 152 k 230 k 76 k 2M 5 0 0.8 200 78 8 VT23N1 20 k 40 k 60 k 20 k 500 k 5 3 0.85 100 35 5 VT23N2 42 k 86 k 130 k 43 k 1M 5 3 0.85 100 35 5 VT23N3 90 k 180 k 270 k 90 k 2M 5 3 0.85 100 35 5 VT30N1 6k 12 k 18 k 6k 200 k 5 0 0.75 100 78 8 VT30N2 12 k 24 k 36 k 12 k 500 k 5 0 0.8 200 78 8 VT30N3 24 k 48 k 72 k 24 k 1M 5 0 0.8 200 78 8 VT30N4 50 k 100 k 150 k 50 k 2M 5 0 0.8 300 78 8 VT30CT 10 k 20 k 30 k 10 k 500 k 5 0 0.8 200 78 8 VT33N1 20 k 40 k 60 k 20 k 500 k 5 3 0.9 100 35 5 VT33N2 40 k 80 k 120 k 40 k 1M 5 3 0.9 200 35 5 VT33N3 80 k 160 k 240 k 80 k 2M 5 3 0.9 200 35 5 VT33CT 60 k 120 k 180 k 60 k 1M 5 3 0.9 200 35 5 VT Series Technical Specification Specification Notes Photocells categorized into groups by resistance. All groups must be purchased together and PerkinElmer maintains the right to determine the product mix among these groups. Dimensions controlled at base of package. Photocells are tested at either 1 fc or 10 lux. 2 fc. typical values shown in the tables are for reference only. Cells are light-adapted at 30-50 fc. The photocell "grid" pattern can vary from that shown. PerkinElmer reserves the right to change mix grid patterns on any standard product. The resistance for any standard cell is controlled at only one light level. If the resistance at other light levels is a concern, please contact us. Part Number Resistance (Ohms) Sensitivity (, typ.) Response Time @ 1fc Max. Volts ms, typ. 10 lux 2850 K 2 fc 2850 K Dark Material LOG (R10/R100) LOG (100/10) V, pk Rise (1-1/e) Fall (1/e) min. typ. max. typ. min. sec. Type VT43N1 4k 8k 12 k -- 300 k 30 3 0.9 250 90 VT43N2 8k 16 k 24 k -- 300 k 30 3 0.9 250 90 18 VT43N3 16 k 32 k 48 k -- 500 k 30 3 0.9 400 90 18 18 VT43N4 33 k 66 k 100 k -- 500 k 30 3 0.9 400 90 18 VT50N1 4k 8k 12 k 4k 200 k 5 0 0.75 200 78 8 VT50N2 8k 16 k 24 k 8k 500 k 5 0 0.75 200 78 8 VT50N3 16 k 32 k 48 k 16 k 1M 5 0 0.8 300 78 8 VT53N1 16 k 32 k 48 k 16 k 1M 5 3 0.85 200 35 5 VT53N2 32 k 76 k 96 k 38 k 2M 5 3 0.85 200 35 5 VT53N3 66 k 132 k 200 k 66 k 3M 5 3 0.85 300 35 5 VT Series Technical Specification Part Number Resistance (Ohms) Sensitivity (, typ.) Response Time @ 1fc Max. Volts ms, typ. 10 lux 2850 K 2 fc 2850 K Dark Material LOG (R10/R100) LOG (100/10) V, pk Rise (1-1/e) Fall (1/e) min. typ. max. typ. min. sec. Type VT80N1 4k 8k 12 k 4k 100 k 5 0 0.8 100 78 VT80N2 8k 16 k 24 k 8k 500 k 5 0 0.8 200 78 8 VT83N1 6k 12 k 18 k 6k 100 k 5 3 0.95 100 35 5 VT83N2 12 k 28 k 36 k 14 k 500 k 5 3 0.95 200 35 5 VT83N3 24 k 48 k 72 k 24k 1M 5 3 0.95 200 35 5 VT83N4 50 k 100 k 150 k 50 k 2M 5 3 0.95 200 35 5 VT83CT 30 k 60 k 90 k 30 k 1M 5 3 0.90 100 35 5 VT90N1 6k 12 k 18 k 6k 200 k 5 0 0.8 100 78 8 VT90N2 12 k 24 k 36 k 12 k 500 k 5 0 0.8 100 78 8 VT90N3 25 k 50 k 75 k 25 k 1M 5 0 0.85 100 78 8 VT90N4 50 k 100 k 150 k 50 k 2M 5 0 0.9 100 78 8 VT93N1 12 k 24 k 36 k 12 k 300 k 5 3 0.9 100 35 5 VT93N2 24 k 48 k 72 k 24 k 500 k 5 3 0.9 100 35 5 VT93N3 50 k 100 k 150 k 50 k 500 k 5 3 0.9 100 35 5 VT93N4 100 k 200 k 300 k 100 k 500 k 5 3 0.9 100 35 5 www.optoelectronics.perkinelmer.com 8 25 photocells A10 Series Technical Specification Part Number A10 Series Typical Electro-Optical Characteristics R10 range R100 typ. R 01 min. R 05 min. 10/100 peak k k M M typ. nm T op range C Limit Values T st range TC 10 lux ton typ. t off typ. Vmax. Pmax. C %/k msec msec V mW A106009 4-11 2 0.04 0.12 0.65 600 -20-+70 -20-+80 0.4 50 40 100 A106011 9-20 3.5 0.06 0.18 0.65 600 -20-+70 -20-+80 0.3 60 40 150 90 A106012 16-33 5 0.18 0.5 0.7 600 -20-+70 -20-+80 0.35 50 35 150 90 90 A106013 27-94 8 0.5 1.5 0.8 600 -20-+70 -20-+80 0.4 35 30 150 90 A106014 77-340 15 1.5 5 0.9 600 -20-+70 -20-+80 0.5 25 20 150 90 A106031 60-130 23 0.4 1.2 0.65 600 -20-+70 -20-+80 0.3 60 40 300 90 A106032 120-210 35 1 3 0.7 600 -20-+70 -20-+80 0.35 50 35 300 90 A106033 200-580 50 3 9 0.8 600 -20-+70 -20-+80 0.4 35 30 300 90 A106034 500-1200 100 5 15 0.9 600 -20-+70 -20-+80 0.5 25 20 300 90 A105009 4-11 2 0.04 0.12 0.65 530 -20-+70 -20-+80 0.3 70 50 100 90 A105011 9-22 4 0.05 0.15 0.6 530 -20-+70 -20-+80 0.2 70 50 150 90 A105013 36-88 12 0.4 1.2 0.7 530 -20-+70 -20-+80 0.3 50 30 150 90 All readings taken at standard light A (2854 K color temperature) after 2 hours of preillumination at 500 lux. A90 Series Technical Specification Part Number Table Key R 10 R 100 R01 R05 10/1oo peak Top Tst TC ton toff Vmax Pmax Resistance at E=10 lux light intensity Resistance at E=100 lux light intensity Dark Resistance after 1 sec (E=0) Dark Resistance after 5 sec (E=0) Sensitivity log (R10/R100)/log (100 lux/10 lux) Peak Spectral Sensitivity Operating Temperature Storage Temperature Thermal Coefficient Rise Time to 63% of final I (R10) Decay Time to 37% of initial I (R10) Maximum Operating Voltage at E=0 lux Power Dissipation at 25C Ambient Temperature Typical Electro-Optical Characteristics R10 range R100 typ. R 01 min. R 05 min. 10/100 peak k k M M typ. nm T op range C Limit Values T st range TC 10 lux ton typ. t off typ. Vmax. Pmax. C %/k msec msec V mW A906009 4-11 2 0.04 0.12 0.65 600 -20-+70 -20-+80 0.4 50 40 100 A906011 9-20 3.5 0.06 0.18 0.65 600 -20-+70 -20-+80 0.3 60 40 150 90 A906012 16-33 5 0.18 0.5 0.7 600 -20-+70 -20-+80 0.35 50 35 150 90 A906013 27-94 8 0.5 1.5 0.8 600 -20-+70 -20-+80 0.4 35 30 150 90 A906014 77-340 15 1.5 5 0.9 600 -20-+70 -20-+80 0.5 25 20 150 90 A906031 60-130 23 0.4 1.2 0.65 600 -20-+70 -20-+80 0.3 60 40 300 90 A906032 120-210 35 1 3 0.7 600 -20-+70 -20-+80 0.35 50 35 300 90 A906033 200-580 50 3 9 0.8 600 -20-+70 -20-+80 0.4 35 30 300 90 A906034 500-1200 100 5 15 0.9 600 -20-+70 -20-+80 0.5 25 20 300 90 A905012 18-44 7 0.15 0.45 0.65 530 -20-+70 -20-+80 0.2 60 40 150 90 A905013 36-88 12 0.4 1.2 0.7 530 -20-+70 -20-+80 0.3 50 30 150 90 A905014 70-200 20 1 3 0.75 530 -20-+70 -20-+80 0.3 40 30 150 90 A995011 9-22 4 0.05 0.15 0.6 530 -20-+70 -20-+80 0.2 70 50 150 90 A995012 18-44 7 0.15 0.45 0.65 530 -20-+70 -20-+80 0.2 60 40 150 90 A995013 36-88 12 0.4 1.2 0.7 530 -20-+70 -20-+80 0.3 50 30 150 90 A995014 70-200 20 1 3 0.75 530 -20-+70 -20-+80 0.3 40 30 150 90 All readings taken at standard light A (2854 K color temperature) after 2 hours of preillumination at 500 lux. 26 90 www.optoelectronics.perkinelmer.com Photocells B90 Series Technical Specification Part Number Typical Electro-Optical Characteristics R10 range R100 typ. R 01 min. R 05 min. 10/100 peak k k M M typ. nm T op range C Limit Values T st range TC 10 lux ton typ. t off typ. Vmax. Pmax. C %/k msec msec V mW B906032 5-13 2 0.1 0.3 0.7 600 -20-+70 -20-+80 0.3 50 35 300 200 B906033 11-40 5 0.2 0.6 0.8 600 -20-+70 -20-+80 0.4 35 25 300 200 All readings taken at standard light A (2854 K color temperature) after 2 hours of preillumination at 500 lux. D99 Series Technical Specification B90 Series Part Number Typical Electro-Optical Characteristics R10 range R100 typ. R 01 min. R 05 min. 10/100 peak k k M M typ. nm T op range C Limit Values T st range TC 10 lux ton typ. t off typ. Vmax. Pmax. C %/k msec msec V mW D996011 1.5-3 0.6 0.01 0.03 0.6 600 -20-+70 -20-+80 0.3 60 35 150 200 D996012 2.8-6 0.8 0.03 0.09 0.7 600 -20-+70 -20-+80 0.35 50 30 150 200 D996013 4.5-13 1.5 0.1 0.3 0.8 600 -20-+70 -20-+80 0.4 35 25 150 200 D996022 8-15 2.5 0.09 0.27 0.7 600 -20-+70 -20-+80 0.35 50 30 150 200 D996023 12-35 4 0.5 1.5 0.8 600 -20-+70 -20-+80 0.4 35 25 150 200 All readings taken at standard light A (2854 K color temperature) after 2 hours of preillumination at 500 lux. M99 Series Technical Specification D99 Series Part Number Typical Electro-Optical Characteristics R10 range R100 typ. R 01 min. R 05 min. 10/100 peak k k M M typ. nm T op range C Limit Values T st range TC 10 lux ton typ. t off typ. Vmax. Pmax. C %/k msec msec V mW M996011a 1.5-5 0.7 0.05 0.15 0.7 600 -20-+70 -20-+80 0.3 50 30 100 200 M996011b 0.8-2 0.4 0.05 0.15 0.65 600 -20-+70 -20-+80 0.3 40 30 100 200 All readings taken at standard light A (2854 K color temperature) after 2 hours of preillumination at 500 lux. U11 Series Technical Specification Part Number M99 Series R10 k Typical Electro-Optical Characteristics R100 typ. R 01 min. R 05 min. 10/10 peak k m m min. nm t op range C Limit Values t st range TC 10 lux ton typ. t off typ. Vmax Pmax C %/K msec msec V mW U116012 20-50 8 0.12 0.36 0.7 550 -20-+70 -20-+80 0.3 50 40 150 U116013 35-220 15 0.4 1.2 0.85 550 -20-+70 -20-+80 0.35 40 30 150 50 U116014 150-1000 35 1 3 0.95 550 -20-+70 -20-+80 0.4 30 25 150 50 U116032 100-320 40 1 3 0.7 550 -20-+70 -20-+80 0.3 40 30 400 50 U116033 250-1100 75 2 6 0.85 550 -20-+70 -20-+80 0.35 30 25 400 50 50 All readings taken at standard light A (2854 K color temperature) after 2 hours of preillumination at 500 lux. U11 Series www.optoelectronics.perkinelmer.com 27 analog optical isolators Features * High input-to-output voltage isolation * True resistance element output * Single- or dual-element outputs available * Low cost * Suitable for AC or DC use * Wide range of input-to-output characteristics * Low drive current * Low "on" resistance, high "off " resistance * Complete solid-state construction Typical Applications * DC isolators * Feedback elements in automatic gain control circuits * Audio limiting and compression * Noiseless switching * Logic interfacing * Remote gain control for amplifiers * Photochoppers * Noiseless potentiometers Principle of Operation Analog Optical Isolators are used in many different types of circuits and applications. Available Related Products VTL5C series LT3011 series LT9900 series Description PerkinElmer Optoelectronics has been a leading manufacturer of analog optical isolators (AOI) for over twenty years and makes a broad range of standard parts under its trademark VACTROL(R). There are many kinds of optical isolators, but the most common is the LED/phototransistor type. Other familiar types use output elements such as light-sensitive SCRs, Triacs, FETs and ICs. The major application for these silicon-based devices is to provide electrical isolation of digital lines connected between different pieces of equipment. The principle of operation is very simple. When an input current is applied to the LED, the output phototransistor turns on. The only connection between the LED and phototransistor is through light--not electricity--thus the term optical isolator. These optical isolators are primarily digital in nature with fast response times for interfacing with logic gates. Rise and fall times of a few microseconds, faster for some isolators, are typical. The AOI also uses an optical link between input and output. The input element is an LED and the output element is always a photoconductive cell or, simply a photocell. Together, the coupled pair act as an electrically variable potentiometer. Since the output element of the AOI is a resistor, the voltage applied to this output resistor may be DC and/or AC and the magnitude may be as low as zero or as high as the maximum voltage rating. Because the input will control the magnitude of a complex waveform in a proportional manner, this type of isolator is an analog-control element. AOIs may be used in the ON-OFF mode but the fastest response time is only in the millisecond range. A level-sensitive Schmitt trigger is required between the AOI and logic gates when used in digital circuits. Absolute Maximum Ratings @ 25 Maximum Temperatures Storage and Operating: -40C to 75C Cell Power: Derate Above 30C: 175 mW 3.9 mW/C LED Current: Derate Above 30C: 40 mA 0.9 mA/C LED Reverse Breakdown Voltage: 3.0 V LED Forward Voltage Drop @ 20 mA: 2.0 V (1.65 V Typ.) VTL5C8 = 2.8 V (2.2 V typ.) VTL5C9 = 2.8 V (2.2 V typ.) VTL5C10 = 2.8 V (2.2 V typ.) Datasheets available upon request. 28 www.optoelectronics.perkinelmer.com Minimum Isolation Voltage @ 70% Rel. Humidity: 2500 VRMS Output Cell Capacitance: 5.0 pF Input/Output Coupling Capacitance: 0.5 pF Optical Isolators VTL Series Technical Specification Part Number Analog Optical Isolators-- VTL5C Series PerkinElmer Optoelectronics' line of AOIs consists of a light-tight package which houses a light source and one or more photoconductive cells. Through control of the input current or voltage applied to the AOI, the output resistance can be varied. The output resistance can be made to switch between an "on" and "off" state or made to track the input signal in an analog manner. Because a small change in input signal can cause a large change in output resistance, AOIs have been found to provide a very economical and technically superior solution for many applications. On Resistance Off Resistance Material Input Dark @ 10 sec. min. Type Current Adapted typ. Slope Dynamic Range Cell Voltage Response Time Turn-on to 63% Turn-off (Decay) Final RON typ. to 100 max. VTL5C1 1 1 mA 10 mA 40 mA 20 k 600 200 50 M 15 100 db 100 V 2.5 ms 35 ms VTL5C2 0 1 mA 10 mA 40 mA 5.5 k 800 200 1 M 24 69 db 200 V 3.5 ms 500 ms VTL5C2/2 0 5 mA 40 mA 2.5 k 700 1 M 20 65 db 50 V 7 ms 150 ms VTL5C3 3 1 mA 10 mA 40 mA 30 k 5 k 1.5 k 10 M 20 75 db 250 V 2.5 ms 35 ms VTL5C3/2 3 1 mA 40 mA 55 k 2 k 10 M 19 71 db 100 V 3 ms 50 ms VTL5C4 4 1 mA 10 mA 40 mA 1.2 k 125 75 400 k 18.7 72 db 50 V 6 ms 1.5 sec VTL5C4/2 4 1 mA 10 mA 1.5 k 150 400 k 8.3 68 db 30 V 6 ms 1.5 sec VTL5C6 0 1 mA 10 mA 40 mA 75 k 10 k 2 k 100 M 16.7 88 db 250 V 3.5 ms 50 ms (1 M) VTL5C7 7 0.4 mA 2 mA 5 k 1.1 k 1 M 5.7 75 db 50 V 6 ms 1 sec. (100 k) VTL5C8 0 1 mA 4 mA 16 mA 4.8 k 1.8 k 1 k 10 M 8 80 db 500 V 4 ms 60 ms VTL5C9 1 2 mA 7.3 112 db 100 V 4 ms 50 ms 4 1 mA 400 50 M VTL5C10 400 k 3.8 75 db 50 V 1 ms 1.5 sec 630 Specification Notes LED Current: Since the input has a substantially constant voltage drop, a current-limiting resistance is required. to a specified value is increased at reduced input drive while the conductance decay time to a specified value is decreased. ON Resistance: Dark adapted resistance measured after 24 or more hours of no input. Typical matching and tracking from 0.4 to 40 mA is 25%. OFF Resistance: Measured 10 sec. after removal of the input. The ultimate resistance is many times greater than the value at 10 sec. Response Time: Ascent measured to 63% of final conductance from the application of 40 mA input. The conductance rise time Measured 5 sec. after removal of the input. The ultimate resistance is many times greater than the value at 5 sec. VTL5C9 response times are based on a 2 mA input. VTL5C10 response times are based on a 10 mA input for ascent time and a 1 mA input for decay time. LT Series Technical Specification LT Series Table Key LT Series R1mA R20mA R01 R05 Top Tst Vi TC Ton Toff Cs Vmax Pmax Output Resistance at If=1 mA Output Resistance at If=20 mA Dark Resistance after 1 sec (If=0) Dark Resistance after 5 sec (If=0) Operating Temperature Range Storage Temperature Range Input/Output Insulation Voltage Module Thermal Coefficient Rise Time to 63% of final R20 Decay Time to 37% of initial R20 Output Capacity Operating Voltage at If=0 Output Power Dissipation at 25C Part Number Typical Electro-Optical Characteristics R1mA R20mA typ. R 01 min. R 05 min. t op range k k M M C t st range C V i min. TC 10 lux V %/K Limit Values ton t off typ. Cs max. Vmax Pmax msec pF V mW msec LT3011-2 -- 1 3 9 -20-+60 -20-+80 2500 2 10 10 2 50 50 LT3011 -- 0.32 0.1 0.3 -20-+70 -20-+70 2500 0.4 50 40 2 100 75 LT9909 0.7-1.2 0.35 0.06 0.18 -20-+70 -20-+70 1000 0.4 40 40 1 50 50 LT9910 1.2-2.5 0.7 0.06 0.18 -20-+70 -20-+70 1000 0.4 40 40 1 50 50 LT9911 2-5 1.5 0.1 0.3 -20-+70 -20-+70 1000 0.4 50 40 1 100 50 LT9912 4.5-9 2 0.2 0.6 -20-+70 -20-+70 1000 0.4 40 30 1 100 50 LT9913 8-16 3.5 0.5 1.5 -20-+70 -20-+70 1000 0.4 35 30 1 100 50 LT9914 14-25 6 0.7 2.1 -20-+70 -20-+70 1000 0.4 35 30 1 100 50 All readings taken at standard light A (2854 K color temperature) after 2 hours of preillumination at 500 lux. Input/Output Coupling Capacity: Reverse Voltage: Diode Forward Current: 1 pF max. 4 V max. 25 mA max. DC www.optoelectronics.perkinelmer.com 29 channel photomultipliers CPM Features * Ultra-high anode sensitivity up to 107 A/W * Extremely low dark current, typically 3 pA @ 106 gain * Very low equivalent noise input (down to 10-17 W) * High stability in dark current ("no bursts") * High gain exceeding 108 * Compact dimensions * High dynamic range * Wide spectral response through multiple window materials * High resolution * Fast response time * High immunity to magnetic fields * Rugged design Module Features * High dynamic range * No cooling required * Very high stability in noise level * Adjustable gain * Active quenching circuit for high light protection * Gateable CPM input * Optical fiber read-out possible * 5 volts operating voltage * Monitor voltage output Typical Applications * Photon detection and counting * Fluorescence and luminescence measurements * Analytical and clinical instrumentation * Particle sizing (molecular imaging) Available Related Products CPM: 1/3" C900 series 1/2" C1300 series 3/4" C1900 series Modules * MD Series DC-Module--contains the CPM, a high-voltage power supply, an amplifier with I/U conversion, and an active quenching circuit for high light protection. * MP Series Photon Counting Module--The Photon Counting Head MP series contains the Channel Photomultiplier, a highvoltage power supply, a discrimination amplifier and a pulse shaper for fast output pulses. * MH Series Channel Photomultiplier Head Module--The Channel Photomultiplier module MH series is designed for both photon counting and DC operating modes. It contains an adjustable high-voltage supply and a Channel Photomultiplier. * MP 96X-2, MP 97X-2 Single Photon Counting Module-- These modules are specially designed for particle sizing measurement with 530 nm and 632 nm laser excitation light. Based on the standard multialkali photocathode, the sensitive diameter is reduced to 2 mm in order to achieve an excellent low dark- count performance. Power Supply * CHV 30N--A self-contained high-voltage supply specially designed for the Channel Photomultipliers CPM C900, C1300 and C1900. It provides the matching voltages for the cathode, channel entrance, and channel end. * CHV 30P--The equivalent power supply for positive high voltage, suitable for photon counting and pulse mode applications. All given values are nominal/typical at 20C ambient temperature; specifications are subject to change without notice. High voltage power supply: CHV 30N CHV 30P Principle of Operation The CPM converts a very low light level into photoelectrons through a semitransparent photocathode deposited on the inner surface of the entrance window. On their way from the cathode to the anode, the photoelectrons pass through a narrow semiconductive channel. Each time the electrons hit the inner surface of the curved channel, multiple secondary electrons are emitted. This effect occurs multiple times along the path, leading to an avalanche effect with a gain exceeding 108. The curved shape of the glass tube improves the multiplication effect. Datasheets available upon request. Please ask for our RoHS compliant products. CPM modules: MD series MP series MH series MP 96X-2, MP 97X-2 MP-RS232 series 30 Description PerkinElmer Optoelectronics' Channel Photomultiplier (CPM) is an ultra-high sensitivity optical detector capable of replacing conventional photomultipliers (PMTs). This device uses a proprietary detector principle to produce ultra-high gain and dynamic range, extremely low noise, and fast response within a compact form factor. These detectors are available as components or in complete modules designed for DC operation and photon counting. All modules are gateable by an external TTL pulse for time-resolved measurements. www.optoelectronics.perkinelmer.com Channel Photomultipliers CPM--1/3" C 900 Series Technical Specification Channel Photomultipliers-- CPM Format 1/3" Spectral Response /nm ENI (W) Dark Current pA Model Dark Counts per Second (cps) Model 115-200 C911 1x10-17 2 C911P 115-200 C921 0.1 1x106 1x10-17 10 C921P 165-320 C922 1 1x106 1x10-17 10 C922P 165-650 C942 1 3x106 1x10-17 80 C942P 10 185-650 C943 3x106 1x10-17 80 C943P 10 300-650 C944 3x10 1x10-17 80 C944P 10 165-850 C962 2x106 4x10-17 1000 C962P 100 185-850 C963 2x106 4x10-17 1000 C963P 100 165-900 C972 6 2x10 1.5x10-16 5000 C972P 500 185-900 C973 2x106 1.5x10-16 5000 C973P 500 165-650 C982 3x106 6x10-18 25 C982P 3 185-650 C983 3x106 6x10-18 25 C983P 3 300-650 C984 3x106 6x10-18 25 C984P 3 165-750 C992 3x106 2x106 1x10-17 50 C992P 5 185-750 C993 3x106 2x106 1x10-17 50 C993P 5 Useful Area: Window Material: Electron Multiplication: Supply Voltage (V): Current Amplification: Bias Current (A): Anode Current: Single Photo Electron gain: @140 nm @200 nm @400 nm @560 nm A/W A/W A/W A/W 6x105 6 Ambient Temperature (C): Photocathode Material: Min. 5 mm diameter MgF2, Quartz or UV Glass Channel Electron Multiplier 2400 (Max. 3000) 5x107 50 Max. 10 A (Max. 30 sec.) 3x106 Max. 50 CsI, CsTe, Low-noise Bialkali, Bialkali, Low-noise Multialk., Multialk. Extended Red Multialk, yellow enhanced. Linear Anode Current: Max. (DC linearity limit) 10% of Bias Current Response Time Rise Time (ns): 3 Pulse Width/FWHM (ns): 6 Peak to Valley: 10:1 CPM--1/2" C 1300 Series Technical Specification Channel Photomultipliers-- CPM Formats 1/2"and 3/4" Spectral Response /nm Model Dark Current pA Model Dark Counts per Second (cps) 115-200 C1311 115-320 C1321 1x106 2x10-17 8 C1311P 0.4 2x10-17 40 C1321P 165-320 C1322 1x106 4 2x10-17 40 C1322P 165-650 C1342 4 3x106 2x10-17 320 C1342P 40 185-650 300-650 C1343 3x106 2x10-17 320 C1343P 40 C1344 3x106 2x10-17 320 C1344P 165-850 C1362 40 2x106 8x10-17 4000 C1362P 400 185-850 165-900 C1363 2x106 8x10-17 4000 C1363P 400 C1372 2x106 3x10-16 20000 C1372P 2000 185-900 C1373 165-650 C1382 3x106 2x106 3x10-16 20000 C1373P 2000 1x10-17 100 C1382P 185-650 C1383 10 3x106 1x10-17 100 C1383P 300-650 10 C1384 3x106 1x10-17 100 C1384P 10 165-750 C1392 3x106 2x106 2x10-17 200 C1392P 20 185-750 C1393 3x106 2x106 2x10-17 200 C1393P 20 @140 nm @200 nm @400 nm @560 nm A/W A/W A/W A/W Useful Area: Window Material: Supply Voltage (V): Current Amplification: Bias Current (A): Response Time Rise Time (ns): Pulse Width/FWHM (ns): 6x105 Min. 9 mm diameter MgF2, Quartz, UV Glass or Borosil. 2400 (Max. 3000) 5x107 50 3 6 ENI (W) Peak to Valley: Photocathode Material: Linear Anode Current: Anode Current: Single Photoelectron gain: Ambient Temperature (C): 10:1 CsI, CsTe, Low-noise Bialkali, Bialkali, Low-noise, Multialk., Multialk. Extended Red Multialk, yellow enhanced. Max. (DC linearity limit) 10% of Bias Current Max. 10 A (Max. 30 sec.) 3x106 Max. 50 www.optoelectronics.perkinelmer.com 31 channel photomultipliers CPM--3/4" C 1900 Series Technical Specification Spectral Response /nm Model 115-200 C1911 115-320 C1921 1x106 165-320 C1922 1x106 165-650 @140 nm @200 nm @400 nm @560 nm A/W AW A/W A/W 6x105 Dark Counts per Second (cps) ENI (W) Dark Current pA Model 3x10-17 20 C1911P 1 3x10-17 100 C1921P 10 3x10-17 100 C1922P 10 C1942 6 3x10 3x10-17 800 C1942P 100 185-650 C1943 3x106 3x10-17 800 C1943P 100 300-650 C1944 3x10 3x10-17 800 C1944P 100 165-850 C1962 2x106 1x10-16 10000 C1962P 1000 185-850 C1963 2x106 1x10-16 10000 C1963P 1000 165-900 C1972 6 2x10 5x10-16 50000 C1972P 5000 185-900 C1973 2x106 5x10-16 50000 C1973P 5000 165-650 C1982 3x106 2x10-17 250 C1982P 25 185-650 C1983 3x106 2x10-17 250 C1983P 25 300-650 C1984 3x106 2x10-17 250 C1984P 25 165-750 C1992 3x106 2x106 3x10-17 500 C1992P 50 185-750 C1993 3x106 2x106 3x10-17 500 C1993P 50 6 Useful Area: Window Material: Min. 15 mm diameter MgF2, Quartz, UV Glass or Borosil. Electron Multiplication: Channel Electron Multiplier Supply Voltage (V): 2400 (Max. 3000) Current Amplification: 5x107 Bias Current (A): 50 Anode Current: Max. 10 A (Max. 30 sec.) Single Photoelectron gain: 3x106 Ambient Temperature (C): Max. 50 Photocathode Material: CsI, CsTe, Low-noise Bialkali, Bialkali, Low-noise Multialk., Multialk. Extended Red Multialk, yellow enhanced. Linear Anode Current: Max. (DC linearity limit) 10% of Bias Current Response Time Rise Time (ns): 3 Pulse Width/FWHM (ns): 6 Peak to Valley: 10:1 Power Supply--CHV30N Technical Specification Part Number Voltage Channel Entrance Voltage Cathode Output Current Long Term Stability typ. Output Ripple typ. Supply Voltage CHV30N -2900 V max. -3000 V max. 100 A max. < 1E-5 < 50 mVpp 5V Test conditions: T = 20C Voltage channel entrance: Voltage cathode: Long-term stability @ VSET: Weight: Operating temperature: Storage temperature: Power Supply CHV30N (CHV30P) and a CPM of the C9xx series Power Supply--CHV30P Technical Specification Part Number Voltage Anode Voltage Cathode typ. Voltage Channel Entrance typ. Output Current Long Term Stability typ. Output Ripple typ. Supply Voltage CHV30P +3000 V max. 0V 90 V 100 A max. < 1E-5 < 30 mVpp 5V Test conditions: T = 20C Voltage Anode: Voltage cathode: Voltage channel entrance: Long-term stability @ VSET: Weight: Operating temperature: Storage temperature: 32 VSET=0-2.9 V Vgate=low or open <<1 E-5 45 g 0-50C -20-60C www.optoelectronics.perkinelmer.com @ VSET=0-3 V 190 V--when gated @ VA 1400 V <<1 E-5 45 g 0-50C -20-60C Channel Photomultipliers CPM Module--1/3" 900 Series Technical Specification Spectral Response /nm Model ENI (W) Dark Current/Offset Voltage @1x106 Gain & 1 V/20 nA Model Dark Counts per Second (cps) Model Dark Current pA @5x107 Gain Model ENI (W) Dark Counts per Second (cps) 165-650 MD 942 1x10-17 185-650 MD 943 1x10-17 3 pA/150 V MP 942 10 MH 942 80 MH 942P 1x10-17 10 MP 943 10 MH 943 80 MH 943P 1x10-17 165-850 MD 962 4x10-17 10 30 pA/1.5 mV MP 962 MP 962-2 100 40 MH 962 1000 MH 962P 4x10-17 100 185-850 MD 963 4x10-17 30 pA/1.5 mV MP 963 MP 963-2 100 40 MH 963 1000 MH 963P 4x10-17 100 165-900 MD 972 1.5x10-16 200 pA/10 mV MP 972 MP 972-2 500 160 MH 972 5000 MH 972P 1.5x10-16 400 185-900 MD 973 1.5x10-16 200 pA/10 mV MP 973 MP 973-2 500 160 MH 973 5000 MH 973P 1.5x10-16 400 165-650 MD 982 6x10-18 MP 982 3 MH 982 25 MH 982P 6x10-18 3 185-650 MD 983 6x10-18 MP 983 3 MH 983 25 MH 983P 6x10-18 3 300-650 MD 984 6x10-18 MP 984 3 MH 984 25 MH 984P 6x10-18 3 165-750 MD 992 1x10-17 MP 992 5 MH 992 50 MH 992P 1x10-17 5 185-750 MD 993 1x10-17 MP 993 5 MH 993 50 MH 993P 1x10-17 5 3 pA/150 V 1 pA/50 V 1 pA/50 V 1 pA/50 V 2 pA/100 V 2 pA/100 V Photocathode Diameter: 5 mm (MP 9xx-2 types: 2 mm) Window Material: Quartz or UV Glass Additional models on request Photocathode Material: Low-noise Bialkali, Bialkali, Low-noise Multialk., Multialk. Extended Red Multialk, yellow enhanced. Quantum Efficiency: 20% typical (Ext. Red MA: 10% typical) CPM Module--1/2" 1300 Series Technical Specification Spectral Response /nm Model ENI (W) Dark Current/Offset Voltage @1x106 Gain & 1 V/20 nA 12 pA/600 V Model Dark Counts per Second (cps) Model Dark Current pA @5x107 Gain Model ENI (W) Dark Counts per Second (cps) MP1342 40 MH1342 320 MH1342P 2x10-17 40 MP1343 40 MH1343 320 MH1343P 2x10-17 40 400 MH1362 4000 MH1362P 8x10-17 400 165-650 MD1342 2x10-17 185-650 MD1343 2x10-17 12 pA/600 V 165-850 MD1362 8x10-17 120 pA/6 mV MP1362 185-850 MD1363 8x10-17 120 pA/6 mV MP1363 400 MH1363 4000 MH1363P 8x10-17 400 165-900 MD1372 3x10-16 800 pA/40 mV MP1372 2000 MH1372 20000 MH1372P 3x10-16 2000 185-900 MD1373 3x10-16 800 pA/40 mV MP1373 2000 MH1373 20000 MH1373P 3x10-16 2000 165-650 MD1382 1x10-17 MP1382 10 MH1382 100 MH1382P 1x10-17 10 185-650 MD1383 1x10-17 MP1383 10 MH1383 100 MH1383P 1x10-17 10 300-650 MD1384 1x10-17 MP1384 10 MH1384 100 MH1384P 1x10-17 10 165-750 MD1392 2x10-17 MP1392 20 MH1392 200 MH1392P 2x10-17 20 185-750 MD1393 2x10-17 MP1393 20 MH1393 200 MH1393P 2x10-17 20 4 pA/200 V 4 pA/200 V 4 pA/200 V 8 pA/400 V 8 pA/400 V Photocathode Diameter: Min. 9 mm Window Material: Quartz or UV Glass Additional models on request Photocathode Material: Low-noise Bialkali, Bialkali, Low-noise Multialk., Multialk. Extended Red Multialk, yellow enhanced. Quantum Efficiency: 20% typical (Ext. Red MA: 10% typical) CPM Module--3/4" 1900 Series Technical Specification CPM Modules-- 3/4" 1900 Series Spectral Response /nm Dark Current/Offset Voltage @1x106 Gain ENI (W) & 1 V/20 nA Model Dark Counts per Second (cps) Model Dark Current pA @5x107 Gain Model ENI (W) Dark Counts per Second (cps) Model 165-650 MD1942 3x10-17 30 pA/1.5 mV MP1942 100 MH1942 800 MH1942P 185-650 MD1943 -17 3x10-17 3x10 30 pA/1.5 mV MP1943 100 100 MH1943 800 MH1943P 3x10-17 165-850 MD1962 1x10-16 300 pA/15 mV 100 MP1962 1000 MH1962 10000 MH1962P 1x10-16 1000 185-850 MD1963 1x10-16 165-900 MD1972 -16 300 pA/15 mV MP1963 1000 MH1963 10000 MH1963P 1x10-16 1000 5x10 2 nA/100 mV MP1972 5000 MH1972 50000 MH1972P 5x10-16 185-900 5000 MD1973 5x10-16 2 nA/100 mV 5000 MH1973 50000 MH1973P 5x10-16 5000 165-650 MD1982 2x10-17 10 pA/500 V MP1973 MP1982 25 MH1982 250 MH1982P 2x10-17 25 185-650 MD1983 2x10-17 MP1983 25 MH1983 250 MH1983P 2x10-17 25 300-650 MD1984 2x10-17 MP1984 25 MH1984 250 MH1984P 2x10-17 25 165-750 MD1992 3x10-17 MP1992 50 MH1992 500 MH1992P 3x10-17 50 185-750 MD1993 3x10-17 MP1993 50 MH1993 500 MH1993P 3x10-17 50 10 pA/500 V 10 pA/500 V 16 pA/800 V 16 pA/800 V Photocathode Diameter: Min. 15 mm Window Material: Quartz or UV Glass Additional models on request Photocathode Material: Low-noise Bialkali, Bialkali, Low-noise Multialk., Multialk. Extended Red Multialk, yellow enhanced. Quantum Efficiency: 20% typical (Ext. Red MA: 10% typical) www.optoelectronics.perkinelmer.com 33 photon counting modules Features * Peak photon-detection efficiency @ 650 nm: 65% typical * Active area: SPCM-AQR-1X: 180 m * User friendly * Gated input * Single +5 V supply Typical Applications * Particle sizing * Ultra-sensitive fluorescence * Photon-correlation spectroscopy * LIDAR * Optical range finding * Adaptive optics * Astronomical observation Datasheets available upon request. Description PerkinElmer Optoelectronics provides photon counting modules based on both APDs and innovative Channel Photomultipliers. APD Based Single Photon Counting Modules The Single Photon Counting Module (SPCM) is a self-contained photon counter which covers the wavelength range from 400 nm to 1100 nm, with photon detection efficiencies exceeding 60% at 650 nm. It has an integral 2-stage TE cooler, cooler controller, amplifier, discriminator and TTL output driver. It also contains a high-voltage DC-to-DC converter and is powered from a single 5 V source. The module utilizes a patented active-quench circuit which allows it to count over 30 million photons per second. The photosensitive area is 180 , and units are available with dark-count rates less than 25 counts / second. SPCM-AQ4C Single Photon Counting Array The SPCM-AQ4C is a 4-channel photon counting card capable of detecting single photons of light over a wavelength range from 400 nm to 1100 nm. Each channel is independent from the others. The SPCM-AQ4C utilizes a unique silicon avalanche photodiode (SliKTM) with a circular active area whose peak photon-detection efficiency exceeds 60% at 650 nm. Each photodiode is both thermoelectrically cooled and temperature controlled, ensuring stabilized performance despite changes in the ambient temperature. All standard Single Photon Counting Modules are RoHS compliant. 34 www.optoelectronics.perkinelmer.com Photon Counting Modules SPCM-AQR-1X Series Technical Specification Parameter Typical Supply current Power cable total resistance 175 m Photon detection efficiency (Pd) @ 400 nm 650 nm 830 nm 1060 nm 5% 65% 45% 2% Dark count (cps) = SPCM-AQR-10 SPCM-AQR-11 SPCM-AQR-12 SPCM-AQR-13 Case operating temperature Output pulse width Pd variation 5C to 40C case temperature 1-3% Dark count (cps) = SPCM-AQR-14 SPCM-AQR-15 SPCM-AQR-16 1000-1500 500-1000 250-500 100-250 Average dark count variation at constant case temperature (6 hrs @ 25C) SPCM-AQR-10/11/12/13 SPCM-AQR-14/15/16 Single-photon timing resolution Output count rate before saturation SPCM-AQ4C Single Photon Counting Array 0.2 Active area (diameter) @ min. Pd Pd variation at constant case temperature (2 h @ 25C) Single Photon Counting Module - SPCM Parameter Supply voltage 0.5 Amps Linearity correction factor @1 Mc/s @5 Mc/s @10 Mc/s @20 Mc/s @25 Mc/s Average dark count variation at 5C to 40C case temperature SPCM-AQR-10/11/12/13 SPCM-AQR-14/15/16 10% max. 1 max. Gate threshold voltage: (@ Vsupply = 5 V) Low level (sink current >90 mA) 5V 5-40C 31ns 4-10% 50-100 50 max. 25 max. 20% max. 2 max. 500 ps Dead time (Count rates below 5 Mc/s) 30 ns 30 Mc/s Afterpulsing probability 0.5% Gating turn on/off (50 output) Disable = TTL Low Enable = TTL High 26 ns 52 ns 1.02 1.19 1.48 2.82 4.91 Settling time following power up (1% stability) @ 1 meg counts/sec and 25C Typical Threshold setting required on counter for digital output pulse (terminate in 50 ) 15 S Gate threshold voltage: (@ Vsupply = 5 V) High level (sink current >30 mA) 0 V-0.4 V 1V 3.5-5.25 V Test Conditions: T=22C SPCM-AQ4C Technical Specification Parameter Supply currents: @+2 V @+5 V @+30 V Typical Parameter Typical 1 Amp 0.2 Amps 0.01 Amps Maximum power consumption: @+2 V @+5 V @+30 V Counts/Second 6 Watts max. 5 Watts max. 1.2 Watts max. Supply voltage 1.95 V-2.05 V 4.75 V-5.25 V 29 V-31 V Operating temperature (heatsink) Photon detection efficiency (per channel) @400 nm @650 nm @830 nm Dark count (per channel) 5C-40C Average dark count variation per channel @ constant heatsink temp. 10% Average dark count variation per channel @ 5 to 40C heatsink temp. Timing resolution 500 ps Dead time Output pulse width 25 ns Maximum count rate* Continuous Gate threshold voltage: (@ Vsupply = 5 V) Low level (sink current >90 mA) Test Conditions: T=22C 1.5 Mc/s Afterpulsing probability 0 V-0.4 V Gate threshold voltage: (@ Vsupply = 5 V) High level (source current >30 mA) 2.5% 60% 45% 500 counts/sec. 20% 50 ns 4 Mc/s 0.3% 3.5 V-5.25 V *500 ms duration, 25% duty cycle www.optoelectronics.perkinelmer.com 35 infrared emitting diodes Features 880 nm * Nine standard packages in hermetic and low-cost epoxy * End- and side-radiating packages * Graded output * High efficiency GaAIAs, 880 nm LPE process delivers twice the power of conventional GaAs 940 nm emitters Features 940 nm * Three standard packages in hermetic and low-cost epoxy * End-radiating packages * High power GaAs, 940 nm LPE process Features 770 nm, 870 nm, 950 nm * Multiple SMD-packages on ceramic substrate * High thermal conductivity * Superior light uniformity * Wide viewing angle * End-to-end and side-to-side stackable Typical Applications * Computer/business equipment * Write-protect control * Margin controls--printers * Industrial * LED light source--light pens * Security systems * Safety shields * Consumer * Coin counters * Lottery card readers * Position sensors--joysticks * Remote controllers--toys, appliances, audio/visual equipment * Games--laser tag * Camera shutter control Description Light Emitting Diodes (LEDs) are solid-state P-N junction devices that emit light when forward biased. An IRED is an Infrared Emitting Diode, a term specifically applied to PerkinElmer IR emitters. Unlike incandescent lamps, which emit light over a very broad range of wavelengths, LEDs emit light over such a narrow bandwidth that they appear to be emitting a single "color". Their small size, long operating lifetimes, low power consumption, compatibility with solid-state drive circuitry, and relatively low cost make LEDs the preferred light source in many applications. Principle of Operation Because they emit at wavelengths which provide a close match to the peak spectral response of silicon photodetectors, both GaAs and GaAIAs IREDs are often used with phototransistors. All infrared emitting diodes are RoHS compliant. Datasheets available upon request. 36 www.optoelectronics.perkinelmer.com LEDs are made from a wide range of semiconductor materials. The emitted peak wavelength depends on the semiconductor material chosen and how it is processed. LEDs can be made that emit in the visible or near-infrared part of the spectrum. The P-N junction is formed by doping one region of the material with donor atoms and the adjacent region with acceptor atoms. Like all P-N junction devices, LEDs exhibit the familiar diode current-voltage characteristics. LEDs emit light only when they are biased in the forward direction. Under forward-biased conditions, carriers are given enough energy to overcome the potential barrier existing at the junction. After crossing the junction, these carriers will recombine. A percentage of the carriers will recombine by a radiative process in which the hole-electron recombination energy is released as a photon of light. The remaining carriers recombine by a non-radiative process and give up their energy in the form of heat. The amount of light generated, or power output of the LED, varies almost linearly with forward current. Doubling the forward current approximately doubles the power output. 880 nm IREDs This series of infrared emitting diodes (IREDs) consists of three standard chips in nine different packages that provide a broad range of mounting, lens and power-output options. 940 nm IREDs This series of infrared emitting diodes (IREDs) consists of two standard chips in three different packages. Infrared Emitting Diodes VTE 880 nm Series Technical Specification Part Number Infrared Emitting Diodes-- VTE Formats 880 nm and 940 nm GaAlAs Infrared Emitting Diodes TO-46 Flat Window Package VTE1063 TO-46 Lensed Package VTE1163 T- 1 3/4 (5 mm) Plastic Package VTE1261 VTE1281F VTE1291-2 VTE1262 VTE1281W-1 VTE1291W-1 VTE1281-1 VTE1281W-2 VTE1291W-2 VTE1281-2 VTE1291-1 T- 1 3/4 (5 mm) Bullet Package VTE1285 VTE1295 Coax Hermetic (with case lead) VTE3175L VTE3176L Long T-1 (3 mm) Plastic Package VTE3372LA VTE3374LA Molded Lateral Package VTE7172 VTE7173 GaAs Infrared Emitting Diodes TO-46 Flat Window Package VTE1013 TO-46 Lensed Package VTE1113 Long T-1 Plastic Package VTE3322LA VTE3324LA Output Radiant Total Test Current Irradiance E e Irradiance Cond . 2 Distance Diameter Intensity I e Power I FT mA mW/cm min. typ. mm mm mW/sr min. PO mW typ. Pulsed Forward Drop VF @ IFT volts typ. max. Half Power Beam Angle 1/2 typ. VTE1063H 3.8 5 36 6.4 49 80 1000 2.8 3.5 VTE1163H 22 28 36 6.4 285 110 1000 2.8 3.5 10 VTE1261H 3 3.9 36 6.4 39 20 100 1.5 2 10 VTE1262H 4 5.2 36 6.4 52 25 100 1.5 2 10 VTE1281-1H 2.5 3.3 36 6.4 32 20 100 1.5 2 10 10 35 VTE1281-2H 5 6.5 36 6.4 65 25 100 1.5 2 VTE1281FH 0.16 0.21 36 6.4 2.1 20 100 1.5 2 45 VTE1281W-1H 1.2 1.6 36 6.4 16 20 100 1.5 2 25 VTE1281W-2H 2.5 3.3 36 6.4 32 25 100 1.5 2 25 VTE1285H 3 5.5 36 6.4 39 20 100 1.5 2 8 VTE1291-1H 2.5 3.3 36 6.4 32 20 100 1.5 2 12 12 VTE1291-2H 5 6.5 36 6.4 65 25 100 1.5 2 VTE1291W-1H 1.2 1.6 36 6.4 16 20 100 1.5 2 25 VTE1291W-2H 2.5 3.3 36 6.4 32 25 100 1.5 2 25 VTE1295H 3 5.5 36 6.4 39 20 100 1.5 2 8 VTE3175LH 0.65 -- 13.6 5.1 1.2 -- 20 1.3 1.8 10 VTE3176LH 1.65 -- 13.6 5.1 3.1 -- 20 1.3 1.8 10 VTE3372LAH 2 2.6 10.16 2.1 2 3 20 1.3 1.8 10 VTE3374LAH 4 5.2 10.16 2.1 4.1 5 20 1.3 1.8 10 VTE7172H 0.4 0.6 16.7 4.6 1.1 2.5 20 1.3 1.8 25 VTE7173H 0.6 0.8 16.7 4.6 1.7 5 20 1.3 1.8 25 Electro-Optical Characteristics @ 25C VTE 940 nm Series Technical Specification Part Number Output Radiant Total Test Current Irradiance E e Irradiance Cond . 2 Distance Diameter Intensity I e Power I FT mA mW/cm min. typ. mm mm mW/sr min. PO mW typ. Pulsed Forward Drop VF @ IFT volts typ. max. Half Power Beam Angle 1/2 typ. VTE1013H 2.1 2.7 36 6.4 27 30 1000 1.9 2.5 35 VTE1113H 12 15 36 6.4 156 30 1000 1.9 2.5 10 VTE3322LAH 1 1.3 10.16 2.1 1 1.5 20 1.25 1.6 10 VTE3324LAH 2 2.6 10.16 2.1 2 2.5 20 1.25 1.6 10 Electro-Optical Characteristics @ 25C I Technical Specification CR50IRDA * Surface mounting device e Part Number Package* Peak Wavelength Radiant Flux CR10IRD Ceramic SMD (A1) 770 6.3 2.4 40/30 1.75 1.6 75 Anode CR10IRDA Ceramic SMD (A1) 870 20 8.2 30/15 1.5 1.4 75 Anode CR10IRH Ceramic SMD (A1) 870 10.6 4.5 1500/800 N/A 1.35 75 Anode CR10IRK Ceramic SMD (A1) 950 11.4 4.4 500/500 1.35 1.2 80 Anode 50 mA 20 mA Rise/Fall Time tr/tf (ns) Forward Voltage VF 50 mA 20 mA Forward Current Orientation IF CR50IRD Ceramic SMD (A2) 770 6.3 2.4 40/30 1.75 1.6 75 Anode CR50IRDA Ceramic SMD (A2) 870 20 8.2 30/15 1.5 1.4 75 Cathode CR50IRH Ceramic SMD (A2) 870 10.6 4.5 1500/800 N/A 1.35 75 Anode CR50IRK Ceramic SMD (A2) 950 11.4 4.4 500/500 1.35 1.2 80 Cathode * All packages are listed on our website. www.optoelectronics.perkinelmer.com 37 laser diodes Typical Applications * Laser range finding * LIDAR * High speed switching * Laser scanning * Fiber optic instrumentation * YAG laser simulation Description Pulsed Laser Diodes These devices range in wavelength from 850 nm to 1550 nm and are produced using Molecular Beam Epitaxy (MBE) and MOCVD growth techniques. Fiber optic pigtailed devices employ an advanced fibre alignment process yielding highly stable fiber to laser diode positioning. Alternative packages and fiber optic core diameters may be supplied on a custom basis. Datasheets available upon request. Multiple Epi-Cavity Lasers In order to multiply the power output of our laser diodes while not increasing the drive current, we offer epitactically stacked devices which contain a series of 2 to 3 active laser diode layers. This way the double or triple power output (compared to single devices) is generated within a height of 10 m. The width of the optically active area on the laser crystal is variable, standard types have 75 and 225 m. High Energy Laser Diodes--Quasi CW Lasers These devices have been designed specifically to meet the demanding requirements of laser initiated ordnance (LIO) applications. Product offerings include a 9.0 mm TO-style package and an 8 pin miniDIL pigtailed package equipped with a rear facet monitor photodiode and 100/140 Im optical fiber. The 980 nm laser chip employs advanced epitaxial materials and processing techniques, providing reliable high optical power output capability and significant power retention at elevated temperatures. Alternate package outlines and fiber optic core diameters may be considered on a custom basis. Please ask for our RoHS compliant products. 38 www.optoelectronics.perkinelmer.com Laser Diodes Multiple Quantum Well Types-850 nm Technical Specification Laser Diode S-Package Part Number Preferred Package Peak Output Power Pko (W) Peak Forward Current IF (A) Pulse Width tw (ns) Maximum Duty Factor DF (%) Beam Diverg. QxQ^ (deg.) FWHM Number of Diode Elements PFAS1S03H TO-52 PFAS1S09H TO-52 5.5 7 50 0.025 12x30 1 17 20 50 0.025 12x30 PFAS1S12H 1 TO-52 26 30 50 0.025 12x30 1 PFAS1S16H TO-52 34 40 50 0.025 12x30 1 PFAS2S09H TO-52 34 20 50 0.025 12x30 2 PFAS2S12H TO-52 52 30 50 0.025 12x30 2 PFAS3S12H TO-52 78 30 50 0.025 12x30 3 Pulse Width tw (ns) Maximum Duty Factor DF (%) Beam Diverg. QxQ^ (deg.) Number of Diode Elements Test conditions: T = 22C Multiple Quantum Well Types-905 nm-PGA Series Technical Specification Laser Diode O-Package Part Number Preferred Package Peak Output Power Pko (W) Peak Forward Current IF (A) PGAS1S03H TO-52 5.5 7 150 0.1 10x25 1 PGAS1S06H TO-52 12 15 150 0.1 10x25 1 PGAS1S09H TO-52 18 22 150 0.1 10x25 1 PGAS1S12H TO-52 24 30 150 0.1 10x25 1 PGAS1S16H TO-52 33 40 150 0.1 10x25 1 PGAS1S24H TO-52 49 60 150 0.1 10x25 1 PGAS3S06H TO-52 34 15 150 0.1 10x30 3 PGAS3S09H TO-52 50 22 150 0.1 10x30 3 PGAS3S12H TO-52 67 30 150 0.1 10x30 3 PGAS4S12H TO-52 90 30 150 0.1 10x30 4 PGAS4S16H TO-52 120 40 150 0.1 10x30 4 Test conditions: T = 22C Laser Diode AA-Package www.optoelectronics.perkinelmer.com 39 laser diodes Multiple Quantum Well Types-905 nm-PGEW Series Technical Specification Part Number Standard Package Peak Output Power Pko (W) Peak Forward Current IF (A) Pulse Width tw (ns) Maximum Duty Factor DF (%) Beam Diverg. QxQ^ (deg.) Number of Diode Elements PGEW1S03H TO-52 plastic PGEW1S09H TO-52 plastic 4.5 7 30 0.0075 10x25 1 15 25 30 0.0075 10x25 PGEW2S09H 1 TO-52 plastic 30 25 30 0.0075 10x30 PGEW3S09H 2 TO-52 plastic 45 25 30 0.0075 10x30 3 Test conditions: T = 22C Laser Diode W-Package Double Heterostructure Types-1550 nm Technical Specification Peak Output Power Pko (W) Peak Forward Current IF (A) Pulse Width tw (ns) Maximum Duty Factor DF (%) Beam Diverg. QxQ^ (deg.) FWHM Number of Diode Elements CD9.0CAP 4 20 200 0.05 20x40 1 TO-52 4 20 200 0.05 20x40 1 CD9.0CAP 8 20 100 0.025 20x40 2 Part Number Standard Package PVGR1S06H PVGS1S06H PVGR2S06H PVGS2S06H TO-52 8 20 100 0.025 20x40 2 PVGR4S12H CD9.0CAP 50 75 50 .025 20x40 4 Test conditions: T = 22C Laser Diode R-Package Laser Diode M-Package 40 www.optoelectronics.perkinelmer.com Laser Diodes Quantum Well Types-980 nm Technical Specification Part Number Standard Package Peak Output Power Pko (W) Peak Forward Current IF (A) Pulse Width tw (ms) Maximum Duty Factor DF (%) Beam Diverg. QxQ^ (deg.) FWHM Fibre Optic Core/Clad Diam. (m) C86118EH CD9.0CAP 1.5 2 10 10 10x35 -- C86155E-10 miniDIL 1.2 2 10 10 -- 100/140 C86159E-09 miniDIL 2 4 10 10 -- 200/240 Test conditions: T = 22C Laser Diode F-Package Double Heterostructure and Quantum Well Types-850 nm and 1064 nm Technical Specification Please ask for additional package options. Part Number Standard Package Centre Wavelength I0 (nm) Peak Output Power Pko (W) C86153E-12 14 pin DIL C86119EH 10/32 COAX C86120E-10 14 pin DIL Peak Forward Current IF (A) Pulse Width tw (ns) Maximum Duty Factor DF (%) Beam Diverg. QxQ^ (deg.) FWHM Fibre Optic Core/Clad Diam. (m) 62.5/125 850 1.0 5 200 0.1 -- 1064 2 4 200 0.1 10x40 -- 1064 0.4 4 200 0.1 -- 100/140 Test conditions: T = 22C Multiple Epi-Cavity Lasers 905 nm, TO-52 Technical Specification Laser diode Maximum Duty Factor DF (%) Emitter Size (m2) Beam Diverg. QxQ^ (deg.) FWHM Output Power (W) Pulse Width tw (ns) Max Peak Current (A) Number of Cavities DPGAS1S03H 0.1 75x10 10x25 15 100 10 2 TPGAS1S03H 0.1 75x10 10x25 23 100 10 3 DPGAS1S09H 0.1 225x10 10x25 48 100 30 2 TPGAS1S09H 0.1 225x10 10x25 75 100 30 3 TPGAS2S09H 0.1 225x175 10x30 142 100 30 2x3 TPGAS3S09H 0.1 225x325 10x30 200 100 30 3x3 DPGA and TPGA laser diodes are based on the PGA type. Response time is below 1 ns. Multiple Epi-Cavity Lasers 905 nm, Plastic, TPGEW series Technical Specification Comparison of the Optical Near Field of Laser Diodes with One, Two or Three Epitaxial Layers Laser diode Maximum Duty Factor DF (%) Peak Output Power Pko (W) Peak Forward Current IF (A) Pulse Width tw (ns) Number of Cavities DPGEW1S09H 0.1 50 30 100 2 TPGEW1S09H 0.1 75 30 100 3 The near-field height of single, dual, and triple epitaxial cavity lasers is 1, 7, and 10 m, respectively, with a width of 225 m each. Multiple epitaxial cavity lasers with smaller widths (for example, 75 m for coupling into multimode fibers) are also available. www.optoelectronics.perkinelmer.com 41 line scan imagers Features * 2500:1 dynamic range * Ultra-low image lag * Electronic exposure control * Antiblooming control * Square pixels with 100% fill factor * Extended spectral range - 200-1000 nm Typical Applications * High-speed document reading * Web inspection * Mail sorting * Production measurement * Position sensing * Spectroscopy Principle of Operation Line scan sensors are ideal for imaging objects in motion on webs or conveyors. Datasheets available upon request. Description Line scan sensors are ideal for imaging objects in motion on webs or conveyors. Applications range from inspection of lead frames and labels to scanning mail and parcels. P-Series Linear Photodiode Array Imagers In P-series linear imagers, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and highspeed, charge-coupled scanning to offer an uncompromising solution to the increasing demands of advanced imaging applications. These high-performance imagers feature low noise, high sensitivity, impressive charge-storage capacity, and lag-free dynamic imaging in a convenient 1-output architecture. The 14 m square contiguous pixels in these imagers reproduce images with minimum information loss and artifact generation, while their unique photodiode structure provides excellent blue response extending below 200 nm in the ultraviolet. The two-phase CCD readout registers require only modest clocking voltages, yet achieve excellent charge-transfer efficiency. Additional electrodes provide independent control of exposure and antiblooming. Finally, high-sensitivity readout amplifiers provide a large-output signal to relax the noise requirements on the camera electronics that follow. These versatile imagers are available in array lengths of 512 to 4096 elements with either low-cost glass or UV-enhanced fused silica windows. PerkinElmer Optoelectronics also maintains capabilities to manufacture line scan imagers up to 8192 pixels combined with 4 outputs and 7 or 14m pixels with existing designs. Contact PerkinElmer for more information. All line scan imagers are RoHS compliant. 42 www.optoelectronics.perkinelmer.com Line Scan Imagers P Series Technical Specification Pixel Count Elements Pixel Size m Number of Outputs Spectral Response Range nm Pixel Data Rate MHz Dynamic Range Horizontal Clocking typ. RL0512P 512 14x14 1 200-1000 40 2500:1 2o@5V RL1024P 1024 14x14 1 200-1000 40 2500:1 2o@5V RL2048P 2048 14x14 1 200-1000 40 2500:1 2o@5V HL2048P 2048 14 2 200-1000 80 2500:1 2o@5V HL4096P 4096 14 2 200-1000 80 2500:1 2o@5V Part Number 0C min. to +55C max. -25C min. to +85C max. <1% 600 mV Spectral Sensitivity Curve 90 90 80 70 70 60 60 50 50 40 40 Left Scale 30 30 20 20 10 10 0 250 350 450 550 650 750 850 Wavelength (nm) QE (%) Right Scale 80 Responsivity (V/ J/cm2) Line Scan Imagers--P Series Operating Temperature: Storage Temperature: Lag: Saturation Voltage: 0 950 1050 www.optoelectronics.perkinelmer.com 43 cmos photodiode arrays Features * 2.5 mm photodiode aperture * Extremely low dark leakage current * Low power dissipation * Clock-controlled sequential readout at rates up to 1 MHz * Single-supply operation with HCMOS-compatible inputs * Single shift register design * Wide dynamic range * Differential video output for clock noise cancellation * High saturation charge 10 pC (25 m) or 20 pC (50 m) * Antiblooming function for low crosstalk * Line Reset Mode for simultaneous reset of all photodiodes * Wide spectral response: 300 to 1000 nm * Polished fused silica window * On-chip diodes (two) for temperature monitoring Typical Applications * Spectroscopy * Colorimetry Description For nearly thirty years, PerkinElmer Optoelectronics has been a leader in the development of sensors for spectroscopy. In spectroscopy and other instrumentation applications, large pixels, very high charge storage capacity, low readout noise and dark current, and direct access to the charge packet are all critical to delivering the high dynamic range and linear response demanded. The CMOS photodiode array architecture meets all of these needs in a way no other sensor technology can match. L-Series Visible Range Spectroscopy Arrays PerkinElmer Optoelectronics' L-series CMOS linear photodiode arrays offer a high-quality, low-cost solution for spectroscopy and colorimetry applications in the 300-1000 nm range. The L-Series family's combination of high sensitivity, low dark current, low switching noise and high saturation charge provides excellent dynamic range and great flexibility in setting integration time. L-series sensors consist of a linear array of silicon photodiodes, each connected to a MOS switch for readout controlled by an integrated shift register scanning circuit. Under external clock control, the shift register sequentially enables each of the switches, directing the charge on the associated photodiode to an output line. A dummy output provides clock noise cancellation. L-series devices are mounted in ceramic side-brazed, 22-pin, dual-inline packages with ground and polished fused silica windows and are pin-compatible with earlier PerkinElmer SBand TB-series sensors. Datasheets available upon request. L-series models are available with pixel spacings of 25 m and 50 m and lengths from 128 to 1024 pixels. All models feature a 2500 m pixel aperture to simplify alignment in spectroscopic instruments. All CMOS photodiode arrays are RoHS compliant. 44 www.optoelectronics.perkinelmer.com CMOS Photodiode Arrays L Series Technical Specification Part Number Video Capacitance @ 5 V bias @ 2.5 V bias pF pF Sensitivity C/J/cm2 Saturation Exposure nJ/cm2 Saturation Charge pC Dynamic Range Dark Current typ. pA RL1201 -- 6.7 2x10-4 50 10 70,000 0.2 RL1202 -- 10.2 2x10-4 50 10 70,000 0.2 RL1205 -- 15.4 2x10-4 50 10 70,000 0.2 RL1210 -- 28.7 2x10-4 50 10 70,000 0.2 RL1501 9.1 -- 4x10-4 50 20 100,000 0.4 RL1502 14 -- 4x10-4 50 20 100,000 0.4 RL1505 25 -- 4x10-4 50 20 100,000 0.4 L-Series Linear CMOS Spectroscopy Sensor-- 25 or 50 m Pitch, 2.5 mm Aperture Sensitivity Exposure/ Saturation Charge: Dark Current: Maximum dark current 1.5 x average dark current * 128, 256, 512 or 1024 photodiode elements with 25 m center-to-center spacing * 128, 256, or 512 photodiode elements with 50 m center-to-center spacing Spectral Response Peak: 650 nm, Range: 300-1000 nm typ. Operating Temperature: Storage Temperature: 0C min. to 55C max. -78C min. to +85C max. Measured at 2.5 V video line bias average 600-700 nm, includes 8% window loss Center-to-center spacing: RL12XX, 25 m RL15XX, 50 m Quantum Efficiency 90 80 70 QE (%) 60 50 40 30 20 10 0 250 350 450 550 650 750 850 Wavelength (nm) 950 1050 www.optoelectronics.perkinelmer.com 45 SmartBlueTM Features * High Speed, up to 80 MHz data rate. * 14 m square pixels in 512, 1024, 2048 or 4096 element resolutions. * Small size 101.6 x 57.2 x 38.1 mm * 8/10/12- bit output format * High line rates up to 68 kHz * 66 db Dynamic Range * High Sensitivity Pinned Photo Diode CCD Sensor * CameraLinkTM base output * User Controlled Smart Pixel Correction * Antiblooming control * Single 12 VD.C. power supply * Electronic exposure control * Adjustable gain levels * Real time status LEDs * CE mark certified The new SmartBlueTM digital linescan cameras incorporate the latest in photodiode array technology based on the industry standard Reticon(R) devices with state of the art electronics and a robust industrial camera housing. The linescan photodiode array is a Pinned Photodiode Charge Couple Device which allows for high sensitivity, fast readout, while maintaining high dynamic range, and low image lag. The new SmartBlueTM cameras are cost effective high performance digital linescan cameras, and feature a CameraLinkTM digital interface. These cameras feature geometrically precise photodiode CCD image sensor with 14 um square pixels with resolutions of 512, 1024, 2048 and 4096 pixels. This "next generation" array can achieve data rates up to 80 MHz with superior noise immunity, precise linearity, and high CTE. The SmartBlueTM digital cameras are designed for high line rate applications with low to moderate light conditions and where small size, and low cost are required. All SmartBlueTM cameras are RoHS compliant. Typical Applications * High speed inspection * Postal / parcel sorting * Web inspection * Surface inspection * OCR / barcode reading General Characteristics SmartBlue 512, 1024, 2048 SmartBlue 4096 46 www.optoelectronics.perkinelmer.com Pixel Size 14x14 Number of Pixels 512, 1024, 2048, 4096 Window Material Glass / Fused Silica m Spectral Range 200-1100 nm Data Rate 40 x 1 or 40 x 2 MHz Output Format 8 / 10 / 12 bits Data Interface CameraLinkTM, Base Control Interface CameraLinkTM serial Input Supply 12 +/-10% V.D.C Dynamic Range 66 dB CCD Linear Array Cameras Principle of Operation The two-point Flat Field pixel correction circuits give the user the flexibility of correcting video data to compensate for non-uniformities in lighting, lens, or CCD sensor variations. Adjustable gain and offset controls allow users to compensate for variations in illumination found in the "real-world" applications. The robust design in conjunction with PerkinElmer's ultra modern manufacturing techniques allows the SmartBlueTM camera to deliver consistent, reliable performance while the rugged industrial design metal housing provides the maximum protection in a variety of harsh environments and factory floor conditions. SmartBlueTM cameras transform light imaged during an exposure period into a digital video signal. Antiblooming structures within the CCD sensor ensure superior performance over a wide range of lighting conditions. User defined control is possible for line rate, exposure time, video gain and offset. SmartBlueTM cameras have an internal self diagnostics with real time status LEDs in addition to a test pattern mode to allow the user to quickly debug and isolate potential problems within an imaging system. In the self diagnostic test pattern mode, an internal pattern generator will output data via the CameraLinkTM interface while the status LEDs will indicate operation of the camera communication control signals. The SmartBlueTM linescan cameras may be interfaced to any CameraLinkTM compatible frame grabber card, allowing for a tested, `plug and play' imaging solution. Typical high performance linescan applications include lumber processing, document scanning, dimensional gauging, biomedical imaging, bar code scanning, and many more industrial and scientific measurement applications. Spectral Sensitivity Curve (1x Gain) Technical Specification Part Number Resolution Window Max. Line Rate (kHz) SB5440CLG-011 512 Glass 68 SB5440CLG-011 512 F Silica 68 SB1440CLG-011 1024 Glass 36.4 SB1440CLG-011 1024 F Silica 36.4 SB2480CLG-011 2048 Glass 37.3 SB2480CLG-011 2048 F Silica 37.3 SB4480CLG-011 4096 Glass 19.1 SB4480CLG-011 4096 F Silica 19.1 www.optoelectronics.perkinelmer.com 47 Special Purpose CCD Sensors cooled ccd sensors Features * 363,000 picture elements (pixels) in a 1100x330 configuration * 24 m square pixels * 2-phase buried channel process * On-chip amplifier for low noise and high-speed readout * Dynamic range greater than 25,000:1 * On-chip temperature sensor * Two-stage TE cooler integrated into the package * Hermetically sealed * 100% fill factor * 10 MHz data rate General Characteristics Parameter Symbol Min. Typ. Format Pixel Size 24x24 m 26.4x7.92 mm Dynamic Range DR Full Well Charge QSAT 250 300 Ke- Saturation Voltage VSAT 1000 1200 mV 25,000:1 Dark Current MPP DL 1 3 Photo Response Non Uniformity PRNU 5 10 % Dark Signal Uniformity DSNU 2 5 % Charge Transfer Efficiency CTE >0.9999 Operating Frequency Dynamic Range: Full Well Charge: Dark Current MPP: Read Noise: 4 fclock V/e10 10 Full well/read noise, MPP mode RLoad = 5.1 k, MPP mode MPP mode at -15C Measured at 500 kHz at -15C Typical Applications * Semiconductor inspection * Wafer inspection * Sorting applications Datasheets available upon request. Operating Temperature: 48 0C min. to 50C max. * In readout direction ** In TDI direction www.optoelectronics.perkinelmer.com Technical Specification PT1109AAQ-711 Pixel Count* pA/cm2 >0.99995 Output Amplifier Gain tdi imagers PT1109AAQ-711 Features * 1024 pixel x 96 stage * Unidirectional operation * 20 MHz data rate * High dynamic range (>5000:1) * Line rates to 19 kHz * Quantum efficiency of 42% at 700 nm * 13 m x 13 m pixel size * >0.99995 horizontal, >0.9999 vertical CTE at maximum saturation exposure Units Imaging Area Read Noise Typical Applications * Spectroscopy * Fluorescence microscopy * Luminescence * Protein quantification Max. 1100x330 1024 active elements Extra Stages* 8 Pixel Size 13x13 m Number of Directions 1 Integration Stages** 96 Extra Stages** 1 Number of Outputs 1 Pixel Rate 20 MHz Line Output Rate (max.) 18.1 kHz Pixel Fill Factor 100% Net Quantum Efficiency >42% at 700 nm Power Dissipation -- Well Capacity 400,000 electrons per pixel RMS Noise -- Dynamic Range >5000:1 CTE @ Qsat >0.99995 (horizontal) >0.9999 (vertical) Photo Response Non-Uniformity (PRNU) +/-10% Spectral Response 400-1000 nm Dark Current -- Sensitivity 3.5 V/electron Operating Temperature 0 to 55C Package Type 32 pin ceramic MHz e- . Optoelectronics Headquarters: PerkinElmer Optoelectronics, 44370 Christy Street, Fremont, CA 94538-3180, USA P: (+1) 510-979-6500, (+1) 800-775-6786 (toll-free), F: (+1) 510-687-1140, opto@perkinelmer.com North America Customer Support Hub, 22001 Dumberry Road, Vaudreuil-Dorion, Quebec, Canada J7V 8P7 P: (+1) 450-424-3300, (+1) 866-574-6786 (toll-free), F: (+1) 450-424-3345, opto@perkinelmer.com Asia Headquarters, 47 Ayer Rajah Crescent #06-12, Singapore 139947 P: (+65) 6775-2022, (+65) 67704-366, F: (+65) 6775-1008, opto.Asia@perkinelmer.com www.optoelectronics.perkinelmer.com 600113_02 CAT0407 European Headquarters, Wenzel-Jaksch-Str. 31, 65199 Wiesbaden, Germany P: (+49) 611-492-247, F: (+49) 611-492-170, opto.Europe@perkinelmer.com