© 2007 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ 500 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 62 A
IDM TC= 25°C, pulse width limited by TJM 150 A
IAR TC= 25°C 62 A
EAR TC= 25°C 80 mJ
EAS 5.0 J
PDTC= 25°C 800 W
TJ -55 to +150 °C
TJM 150 °C
Tstg -55 to +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
FcMounting force 20...120/4.5...27 N/lb.
Weight 10 g
N-Channel Enhancement Mode
Features
zDesigned for linear operation
zInternational standard package
zUnclamped Inductive switching (UIS)
rated
zMolding epoxies meet UL 94 V-0
flammability classification
Applications
zProgrammable loads
zCurrent regulators
zDC-DC converters
zBattery chargers
zDC choppers
zTemperature and lighting controls
Advantages
zEasy to mount
zSpace savings
zHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BVDSS VGS = 0 V, ID = 1 mA 500 V
VGS(th) VDS = VGS, ID = 250 μA35V
IGSS VGS = ±30 V, VDS = 0 V ±200 nA
IDSS VDS = VDSS TJ = 25°C50μA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 20 V, ID = 0.5 ID25 0.10 Ω
Note 1
G = Gate D = Drain
S = Source TAB = Drain
Linear Power MOSFET
With Extended FBSOA IXTB62N50L
DS99336A(03/07)
Preliminary Technical Information
VDSS = 500 V
ID25 = 62 A
RDS(on) ≤≤
≤≤
≤ 0.1 ΩΩ
ΩΩ
Ω
PLUS 264TM (IXTB)
S
GD(TAB)
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTB62N50L
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS = 10 V; ID = 0.5 • ID25, Note 1 10 15 20 S
Ciss 11500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1460 pF
Crss 210 pF
td(on) 36 ns
trVGS = 15 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 85 ns
td(off) RG= 2 Ω (External), 110 ns
tf75 ns
Qg(on) 550 nC
Qgs VGS = 20 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 115 nC
Qgd 180 nC
RthJC 0.156 °C/W
RthCS 0.15 °C/W
Safe Operating Area Specification
Symbol Test Conditions Min. Typ. Max.
SOA VDS = 400 V, ID = 0.75 A, TC = 90°C 300 W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 62 A
ISM Repetitive; pulse width limited by TJM 176 A
VSD IF = IS, VGS = 0 V, 1.5 V
Note 1
trr IF = IS, -di/dt = 100 A/μs, VR = 100V 500 ns
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
PLUS 264TM (IXTB) Outline
Ref: IXYS CO 0113 R0
Note 1: Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %
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© 2007 IXYS CORPORATION, All rights reserved
IXTB62N50L
Fig. 2. Extended Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
0 2 4 6 8 101214161820
V
D S
- Volts
I
D
- Am peres
VGS
= 2 0V
18V
16V
9V
8V
14V
10V
12V
Fig. 3. Output Characteristics
@ 125ºC
0
10
20
30
40
50
60
70
02468101214
V
D S
- Volts
I
D
- Amp eres
VGS
= 20 V
16V
14V
12V
7V
6V
9V
8V
10V
Fig. 1. Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
0123456
V
D S
- Volts
I
D
- Ampere s
VGS
= 2 0V
18V
16V
14V
8V
7V
9V
10V
12V
Fig. 4. R
DS(on)
Normalized to 0.5 I
D25
V
alue
vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50-25 0 255075100125150
T
J
- Degrees Centigrade
R
D S (on)
- Normalized
ID = 6 2 A
ID
= 3 1A
VGS
= 20V
Fig. 6. Drain Current vs. Case
Temperature
0
10
20
30
40
50
60
70
-50-25 0 255075100125150
T
C
- Degrees Centigrade
I
D
- Am peres
Fig. 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0 153045607590105120135150
I
D
- Amperes
R
D S (on)
- Norm alized
TJ = 125ºC
TJ = 25 ºC
VGS = 20 V
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTB62N50L
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - pF
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
18
20
0 100 200 300 400 500
Q
G
- nanoCoulombs
V
G S
- Vo l t s
V
DS
= 250V
I
D
= 31 A
I
G
= 10 m A
Fig. 7. Input Admittanc e
0
10
20
30
40
50
60
70
80
90
100
5 6 78 91011121314
V
G S
- Volts
I
D
- Amp eres
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
3
6
9
12
15
18
21
24
27
30
0 102030405060708090100
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40 ºC
25ºC
125ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
25
50
75
100
125
150
175
200
225
250
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
V
S D
- Volts
I
S
- Amp eres
T
J
= 125ºC
T
J
= 25 ºC
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© 2007 IXYS CORPORATION, All rights reserved
IXTB62N50L
Fig. 12. Forward-Bias Safe
Operating Area @ T
C
= 25ºC
0.1
1
10
100
1000
10 100 1000
V
D S
- Volts
I
D
- Am peres
100µs
1ms
DC
T
J
= 150ºC
R
DS(
on
)
Lim it
10ms
25µs
Fig. 13. Forward-Bias Safe
Operating Area @ T
C
= 90ºC
0.1
1
10
100
1000
10 100 1000
V
D S
- Volts
I
D
- Am peres
100µs
1ms
DC
T
J
= 150ºC
R
DS(
on
)
Limit
10ms
25µs
Fi g. 14. Maximu m Transien t Th ermal I mped ance
0.001
0.010
0.100
1.000
0.1 1 10 100 1000
Pulse Width - milliseconds
Z (th) J C - (ºC/W)
IXYS REF: T_62N50L (9N) 4-05-07-A.xls
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