CLA 50 E 1200 HB
V = V
kA²s
kA²s
kA²s
kA²s
High Efficiency Thyristor
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
R/D
V
IA
V
T
1.32
R0.25 K/W
R/D
2 1
3
min.
50
Applications:
V
RSM/DSM
V1300
50T = 25°C
VJ
T = °C
VJ
mA4
Package:
Part number
V = V
R/D
T = 25°C
VJ
I = A
T
V
T = °C
C
125
P
tot
500 WT = 25°C
C
T
VJ
150 °C-40
V
I
RRM
=
=
1200
79
50
CLA 50 E 1200 HB
V
A
1200
max. non-repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
virt ua l j un ctio n temp e r ature
total power dissipation
Conditions Unit
1.60
T = 25°C
VJ
125
V
T0
V0.88T = °C
VJ
150
r
T
7.7 mΩ
V1.27T = °C
VJ
I = A
T
V
50
1.65
I = A
T
100
I = A
T
100
threshold voltage
slope resistance for power loss calculation only
Backside: anode
=50
A
● Housing:
Single Thyristor
TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
µA
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
125
V
RRM/DRM
V1200
max. re pe titiv e re vers e/forward blockin g volt a ge T = 25°C
VJ
IA79
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 1
P
P
GAV
W0.5
average gate power dissipation
C
J
25
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = °C
VJ
45
max. forward surge current
T = °C
VJ
150
I²t T = °C45
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
I
550
595
1.11
1.06
A
A
A
A
470
505
1.52
1.48
1200
300 µs
RMS forward current
T
(
RMS
)
T(RMS)
T(AV)M
180° sine
T
(
AV
)
M
average forward current
IXYS reserves the right to change limits, conditions and dimensions. 20101215e
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
http://store.iiic.cc/
CLA 50 E 1200 HB
(di/dt)
cr
A/µ
s
150
repetitive, I =
T
VJ
= 150°C
critical rate of rise of current
V
GT
gate trigger voltage V= 6 V T = °C25
(dv/dt) T = 150 °C
critical rate of rise of voltage
A/µ
s
500
V/µ
s
f = 50 Hz; t = 200 µs
IA;
V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
Symbol Definition Ratings
typ. max.min.Conditions Uni
t
40 A
T
P
= 0.3 di /dt A/µs=0.3
DDRM
cr
V = ⅔ V
D DRM
GK
1000
1.5
V
T= °C-40
VJ
I
GT
gate trigger current V= 6 V T = °C25
DVJ
50 m
A
T= °C-40
VJ
1.6
V
80 m
A
V
GD
gate non-trigger voltage T= °C
VJ
0.2
V
I
GD
gate non-trigger current 3m
A
V = ⅔ V
D DRM
150
latching current T= °C
VJ
125 m
A
I
L
25tµs
p
=10
IA;= 0.3 di /dt A/µs=0.3
holding current T= °C
VJ
100 m
A
I
H
25V= 6 V
D
R = ∞
GK
gate controlled delay tim e T= °C
VJ
2µst
gd
25
IA;= 0.3 di /dt A/µs=0.3
V = ½ V
D DRM
turn-off time T= °C
VJ
200 µst
q
di/dt = A/µs;10 dv/dt = V/µs20
V =
R
100 V; I A
T
=33
V = ⅔ V
D DRM
tµs
p
= 200
non-repetitive, I = 50 A
T
;
150
IXYS reserves the right to change limits, conditions and dimensions. 20101215e
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
http://store.iiic.cc/
CLA 50 E 1200 HB
I
RMS
A
per terminal 70
R
thCH
K/W0.25
M
D
Nm1.2
mounting torque 0.8
T
stg
°C150
storage temperature -55
Weight g6
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
F
C
N120
mount ing forc e with cl ip 20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
CLA 50 E 1200 HB 503748Tube 30
XXXXXX
YYWW
Logo
Marking on product
DateCode
Assembly Code
abcdef
Product Marking
C
L
A
50
E
1200
HB
Thyristor (SCR)
High Efficiency Thyristor
(up to 1200 V)
Single Part
TO-247AD (3)
=
=
=
CLA50E1200TC TO-268AA (D3Pak)
Similar Part Package
Marking on Pr oduct
CLA50E1200HB
1200
Voltage class
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Part number
IXYS reserves the right to change limits, conditions and dimensions. 20101215e
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
http://store.iiic.cc/
CLA 50 E 1200 HB
S
Ø
P
Ø
P1 D2
D1
E1
4
123
L
L1
2x
b2
3x
b
b4
2x
e
2x
E2
D
E
Q
A
A2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20101215e
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
http://store.iiic.cc/
CLA 50 E 1200 HB
10 100 1000
1
10
100
1000
0.01 0.1 1
0
100
200
300
400
500
600
700
800
900
0.0 0.5 1.0 1.5 2.0 2.5
0
20
40
60
80
100
120
140
160
0.001 0.01 0.1 1 10
0.0
0.1
0.2
0.3
ITSM
[A]
IT
[A]
VT[V]
t [s]
ZthJC
[K/W]
23456789
011
100
1000
10000
I
2
t
[A
2
s]
t [ms]
I
T(AV)M
[A]
T
C
[°C]
0 20 40 60 80 100 120 140 160
0
10
20
30
40
50
60
70
80
Fig. 1 Forward characteristics
T
VJ
= 125°C
Fig. 3 I
2
t versus time (1-10 ms)
t[s]
Fig. 6 Max. forward current
at case temperature
Fig. 2 Surge overload current
Fig. 7 Transient thermal impedance junction to case
1 10 100 1000 10000
0.1
1
10
I
G
[mA]
V
G
[V]
1: I
GT
,T
VJ
=125°C
2: I
GT
,T
VJ
=25°C
3: I
GT
,T
VJ
=-40°C
4: P
GAV
=0.5W
5: P
GM
=1W
6: P
GM
=10W
I
GD
,T
VJ
= 150°C
t
gd
[µs]
I
G
[mA]
typ. Limit
T
VJ
=125°C
T
VJ
=25°C
6
5
4
123
Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time t
gd
Ri ti
0.0075 0.0011
0.017 0.0019
0.057 0.0115
0.158 0.12
0.0105 0.5
T
VJ
= 125°C
T
VJ
=45°C
50 Hz, 80% V
RRM
T
VJ
=125°C
T
VJ
= 45°C
V
R
=0 V
IXYS reserves the right to change limits, conditions and dimensions. 20101215e
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
http://store.iiic.cc/
