INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
11/24/04
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
Benefits
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• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 22
IC @ TC = 100°C Continuous Collector Current 12
ICM Pulsed Collector Current 44
ILM Clamped Inductive Load Current 44 A
IF @ TC = 25°C Diode Continuous Forward Current 22
IF @ TC = 100°C Diode Continuous Forward Current 10
IFM Diode Maximum Forward Current 44
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 156
PD @ TC = 100°C Maximum Power Dissipation 62
TJOperating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
W
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.8
RθJC Junction-to-Case - Diode ––– ––– 3.4
RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount––– ––– 62
RθJA Junction-to-Ambient (PCB Mount, steady state)––– ––– 40
Wt Weight ––– 1.44 ––– g
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
E
G
n-channel
C
VCES = 600V
IC = 12A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
D2Pak
IRGS10B60KD
TO-220AB
IRGB10B60KD TO-262
IRGSL10B60KD
PD - 94925A
IRG/B/S/SL10B60KDPbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 60 0 –– – –– – V V GE = 0V, IC = 500µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 IC = 10A, VGE = 15V
––– 2.20 2.50 V IC = 10A, VGE = 15V TJ = 150°C
VGE(th) Gate Threshold Voltage 3.5 4. 5 5.5 V V CE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage – – – -10 –– – mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C)
gfe Forward Transconductance ––– 7.0 ––– S VCE = 50V, IC = 10A, PW=80µs
ICES Zero Gate Voltage Collector Current ––– 3.0 150 µA V GE = 0V, VCE = 600V
––– 300 700 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ––– 1.30 1.45 I C = 10A
––– 1.30 1.45 V IC = 10A TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Ref.Fig.
5, 6,7
9,10,11
9,10,11
12
8
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) –– – 38 ––– IC = 10A
Qge Gate - Emitter Charge (turn-on) ––– 4. 3 –– – nC VCC = 400V
Qgc Gate - Collector Charge (turn-on) ––– 16.3 ––– VGE = 15V
Eon Turn-On Switching Loss ––– 140 247 µJ IC = 10A, VCC = 400V
Eoff Turn-Off Switching Loss ––– 250 360 VGE = 15V,RG = 47Ω, L = 200µH
Etot Total Switching Loss ––– 390 607 Ls = 150nH TJ = 25°C
td(on) Turn-On Delay Time ––– 30 39 IC = 10A, VCC = 400V
trRise Time ––– 20 29 VGE = 15V, RG = 47Ω, L = 200µH
td(off) Turn-Off Delay Time – –– 230 26 2 ns Ls = 150nH, TJ = 25°C
tfFall Time ––– 23 32
Eon Turn-On Switching Loss – – – 230 34 0 IC = 10A, VCC = 400V
Eoff Turn-Off Switching Loss ––– 350 464 µJ VGE = 15V,RG = 47Ω, L = 200µH
Etot Total Switching Loss ––– 580 804 Ls = 150nH TJ = 150°C
td(on) Turn-On Delay Time ––– 30 39 IC = 10A, VCC = 400V
trRise Time ––– 20 28 VGE = 15V, RG = 47Ω, L = 200µH
td(off) Turn-Off Delay Time – –– 250 27 4 ns Ls = 150nH, TJ = 150°C
tfFall Time ––– 26 34
Cies Input Capacitance ––– 620 ––– VGE = 0V
Coes Output Capacitance ––– 62 ––– pF VCC = 30V
Cres Reverse Transfer Capacitance ––– 22 ––– f = 1.0MHz
TJ = 150°C, IC = 44A, Vp =600V
VCC = 500V, VGE = +15V to 0V,
µs TJ = 150°C, Vp =600V,RG = 47Ω
VCC = 360V, VGE = +15V to 0V
Erec Reverse Recovery energy of the diode ––– 245 33 0 µJ TJ = 150°C
trr Diode Reverse Recovery time ––– 90 105 ns VCC = 400V, IF = 10A, L = 200µH
Irr Diode Peak Reverse Recovery Current ––– 19 22 A VGE = 15V,RG = 47Ω, Ls = 150nH
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
RBSOA Reverse Bias Safe Operting Area FULL SQUARE
SCSOA Short Circuit Safe Operting Area 10 –– – – ––
Ref.Fig.
CT1
CT4
CT4
13,15
WF1WF2
4
CT2
CT3
WF4
17,18,19
20, 21
CT4,WF3
CT4
RG = 47Ω
14, 16
CT4
WF1
WF2
Note to are on page 15
IRG/B/S/SL10B60KDPbF
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
0 20 40 60 80 100 120 140 160
TC (°C)
0
20
40
60
80
100
120
140
160
180
Ptot (W)
10 100 1000
VCE (V)
0
1
10
100
IC A)
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
IC (A)
10 µs
100 µs
1ms
DC
20 µs
0 20 40 60 80 100 120 140 160
TC (°C)
0
5
10
15
20
25
IC (A)
IRG/B/S/SL10B60KDPbF
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Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
0123456
VCE (V)
0
5
10
15
20
25
30
35
40
ICE (A)
VGE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
0123456
VCE (V)
0
5
10
15
20
25
30
35
40
ICE (A)
VGE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF (V)
0
5
10
15
20
25
30
35
40
IF (A)
-40°C
25°C
150°C
0123456
VCE (V)
0
5
10
15
20
25
30
35
40
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IRG/B/S/SL10B60KDPbF
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Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 5.0A
ICE = 10A
ICE = 15A
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 5.0A
ICE = 10A
ICE = 15A
0 5 10 15 20
VGE (V)
0
10
20
30
40
50
60
70
80
ICE (A)
TJ = 25°C
TJ = 150°C
TJ = 150°C
TJ = 25°C
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 5. 0A
ICE = 10A
ICE = 15A
IRG/B/S/SL10B60KDPbF
6www.irf.com
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=200µH; VCE= 400V
RG= 47Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=200µH; VCE= 400V
RG= 47Ω; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=200µH; VCE= 400V
ICE= 10A; VGE= 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=200µH; VCE= 400V
ICE= 10A; VGE= 15V
050 100 150
RG (Ω)
0
50
100
150
200
250
300
350
400
450
500
Energy (µJ)
EON
EOFF
0 5 10 15 20 25
IC (A)
0
100
200
300
400
500
600
700
800
Energy (µJ)
EOFF
EON
0 5 10 15 20 25
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
050 100 150
RG (Ω)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
IRG/B/S/SL10B60KDPbF
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Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C Fig. 18 - Typical Diode I RR vs. RG
TJ = 150°C; IF = 10A
Fig. 20 - Typical Diode Q RR
VCC= 400V; VGE= 15V;TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 10A; TJ = 150°C
050 100 150
RG (Ω)
0
5
10
15
20
25
IRR (A)
0500 1000 1500
diF /dt (A/µs)
0
5
10
15
20
25
IRR (A)
0 500 1000 1500
diF /dt (A/µs)
400
500
600
700
800
900
1000
1100
1200
QRR (µC)
22Ω
47Ω
100 Ω
10Ω
20A
10A
5.0A
0 5 10 15 20 25
IF (A)
0
5
10
15
20
25
IRR (A)
RG = 10 Ω
RG =22 Ω
RG =47 Ω
RG =100 Ω
IRG/B/S/SL10B60KDPbF
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Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
Fig. 23 - Typical Gate Charge vs. VGE
ICE = 10A; L = 600µH
Fig. 22- Typ. Capacitance vs. V CE
VGE= 0V; f = 1MHz
0 5 10 15 20 25
IF (A)
0
50
100
150
200
250
300
350
400
450
Energy (µJ)
22 Ω
10Ω
47 Ω
100 Ω
0 10203040
Q G, Total Gat e Charge (nC)
0
2
4
6
8
10
12
14
16
VGE (V)
300V
400V
110 100
VCE (V)
10
100
1000
Capacitance (pF)
Cies
Coes
Cres
IRG/B/S/SL10B60KDPbF
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Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0. 50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + T c
Ri (°C/W) τi (sec)
0.285 0.000134
0.241 0.000565
0.288 0.0083
τJ
τJ
τ1
τ1τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τ
C
Ci= i/Ri
Ci= τi/Ri
Ri (°C/W) τi (sec)
0.846 0.000149
1.830 0.001575
1.143 0.027005
τJ
τJ
τ1
τ1τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τ
C
Ci= i/Ri
Ci= τi/Ri
IRG/B/S/SL10B60KDPbF
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Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
1K
VCC
DUT
0
L
Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
L
Rg
80 V DUT
480V
+
-
DC
Driver
DUT
360V
IRG/B/S/SL10B60KDPbF
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-100
0
100
200
300
400
500
600
-0.20 0.00 0.20 0.40 0.60 0.80
time(µs)
V
CE
(V)
-2
0
2
4
6
8
10
12
I
CE
(A)
90% ICE
5% VCE
5% ICE
Eoff Loss
tf
-100
0
100
200
300
400
500
600
15.90 16.00 16.10 16.20
time (µs)
V
CE
(V)
-5
0
5
10
15
20
25
30
I
CE
(A)
TEST CURRENT
90% te st current
5% V
CE
10% test current
tr
Eon Los s
-600
-500
-400
-300
-200
-100
0
100
-0.15 -0.05 0.05 0.15 0.25
time (µS)
V
F
(V)
-20
-15
-10
-5
0
5
10
15
I
F
(A)
Peak
IRR
t
RR
Q
RR
10%
Peak
IRR
0
50
100
150
200
250
300
350
400
-5.00 0.00 5.00 10.00 15.00
time (µS)
V
CE
(V)
0
50
100
I
CE
(A)
VCE
I
CE
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4 Fig. WF4- Typ. S.C Waveform
@ TJ = 150°C using Fig. CT.3
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4 Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
IRG/B/S/SL10B60KDPbF
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TO-220AB Part Marking Information
EXAMPLE:
IN THE ASSEMBLY LINE "C"
THIS IS AN IRF1010
LOT CODE 1789
ASSEMBLED ON WW 19, 1997 PAR T NU MBE
AS S EMBL Y
LOT CODE
DATE CODE
YEAR 7 = 1997
LINE C
WEEK 1 9
LOGO
RECTIFIER
INTERNATIONAL
Note: "P" in assembly line
position indicates "Lead-Free"
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
IRG/B/S/SL10B60KDPbF
www.irf.com 13
D2Pak Part Marking Information
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: "P" in assembly line
position indicates "Lead-F ree"
F530S
THIS IS A N IRF530S WITH
LOT CO D E 8024
ASSEMBLED ON WW 02, 2000
IN THE ASS EMBLY LINE "L"
AS S EMBL Y
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBE
R
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
F530S
A = ASSEMBLY SITE CODE
WEEK 02
P = DE S IGNAT E S L EAD-F R E E
PRODUCT (OPTIONAL)
RECTIFIER
INTERNATIONAL
LOGO
LOT CODE
ASSEMBLY YEAR 0 = 2000
DATE CODE
PART NUM BER
IRG/B/S/SL10B60KDPbF
14 www.irf.com
AS S EMB LY
LOT CODE
RECTIFIER
INTERNATIONAL
ASSEMBLED O N WW 19, 1997
Note: "P" in as sembly line
position indicates "L ead-F ree"
IN THE ASSEMBLY LINE "C" LOGO
THIS IS AN IRL3103L
LOT CODE 1789
EXAMPLE:
LINE C
DATE CODE
WEE K 19
YEAR 7 = 1997
PART NUMBER
PART NUMBER
LOGO
LOT CODE
AS S EMB LY
INTERNATIONAL
RECTIFIER
PRODU CT (OPTIONAL)
P = DES IGNAT ES LEAD-FREE
A = ASS EMBL Y SITE CODE
WE EK 1 9
YEAR 7 = 1997
DATE CODE
OR
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IRG/B/S/SL10B60KDPbF
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Notes:
This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery.
VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 47Ω.
TO-220 package is not recommended for Surface Mount Application
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
F
EED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
F
EED DIRECTION
10. 9 0 ( . 4 29 )
10. 7 0 ( . 4 21 ) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957
)
23.90 (.941
)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362
)
MIN.
30.40 (1.197)
MAX.
26. 40 (1.039)
24. 40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/04
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/