
2SD880
NPN Silicon
Power Transistors
Features
• With TO-220 package
• Power amplifier applications
Maximum Ratings
Symbol
Rating Rating Unit
VCEO Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current 3 A
PC Collector power dissipation 1.5 W
TJ Junction Temperature -55 to +150 ℃
TSTG Storage Temperature -55 to +150 ℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter Min
Type
Max
Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=50mAdc, IB=0) 60 --- --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0) 60 --- --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0) 7 --- --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=60Vdc,IE=0) --- --- 100
uAdc
IEBO Emitter-Base Cutoff Current
(VEB=7Vdc, IC=0) --- --- 100
uAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio
(IC=500mAdc, VCE=5Vdc)
60
---
300
---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=3Adc, IB=300mAdc) ---
---
1
Vdc
VBE Base-Emitter Voltage
(IC=0.5Adc,VCE=5Vdc) ---
---
1
Vdc
fT Transistor Frequency
(IC=500mAdc, VCE=5Vdc) --- 3 --- MHz
Cob Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1MHz) --- 70 --- pF
ton Turn on time
--- 0.8
--- us
ts Storage time
--- 1.5
--- us
tf Fall time
IB1=-IB2=0.2A, IC=2A,
VCC=30V, PW=20us --- 0.8
--- us
Classification OF hFE(1)
Rank Q Y GR
Range 60-120 100-200 150-300
INCHES MM
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .380 .420 9.65 10.67
F ------ .250 ------ 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
N .080 .115 2.03 2.92
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220
PIN
PIN 1. BASE
PIN 2. COLLECTOR
1 2 3
PIN 3. EMITTER
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 2 2006/05/17
TM
Micro Commercial Components
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0