MPSA62 MPSA65
MPSA63 MPSA66
MPSA64
SILICON
PNP DARLINGTON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSA62 series
devices are silicon PNP Darlington transistors,
manufactured by the epitaxial planar process, designed
for applications requiring extremely high gain.
MARKING: FULL PART NUMBER
TO-92 CASE
MPSA63 MPSA65 UNITS
MAXIMUM RATINGS: (TA=25°C) SYMBOL MPSA62 MPSA64 MPSA66 UNITS
Collector-Base Voltage VCBO 20 30 30 V
Collector-Emitter Voltage VCES 20 30 30 V
Emitter-Base Voltage VEBO 10 10 8.0 V
Continuous Collector Current IC 500 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance JA 200 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
MPSA62 MPSA63 MPSA64 MPSA65 MPSA66
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
ICBO V
CB=15V - 100 - - - - - - - - nA
ICBO V
CB=30V - - - 100 - 100 - 100 - 100 nA
IEBO V
EB=10V - 100 - 100 - 100 - - - - nA
IEBO V
EB=8.0V - - - - - - - 100 - 100 nA
BVCES IC=100μA 20 - 30 - 30 - 30 - 30 - V
VCE(SAT) IC=10mA, IB=10μA - 1.0 - - - - - - - - V
VCE(SAT) IC=100mA, IB=0.1mA - - - 1.5 - 1.5 - 1.5 - 1.5 V
VBE(ON) VCE=5.0V, IB=10mA - 1.4 - - - - - - - - V
VBE(ON) VCE=5.0V, IB=100mA - - - 2.0 - 2.0 - 2.0 - 2.0 V
hFE VCE=5.0V, IC=10mA 20K - 5K - 10K - 50K - 75K -
hFE VCE=5.0V, IC=100mA - - 10K - 20K - 20K - 40K -
fT V
CE=5.0V, IC=100mA, f=100MHz - - 125 - 125 - - - - - MHz
fT V
CE=10V, IC=30mA, f=50MHz - - - - - - 100 - 100 - MHz
Cob VCB=10V, IE=0, f=100kHz 2.5 (TYP) 2.5 (TYP) 2.5 (TYP) 2.5 (TYP) 2.5 (TYP) pF
NF VCE=5.0V, IC=1.0mA,
RS=100kΩ, f=1.0kHz 2.0 (TYP) 2.0 (TYP) 2.0 (TYP) 2.0 (TYP) 2.0(TYP) dB
R1 (18-March 2014)
www.centralsemi.com