MPSA44
MPSA45
SILICON
HIGH VOLTAGE
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSA44 and
MPSA45 are silicon NPN transistors designed for
high voltage applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL MPSA44 MPSA45 UNITS
Collector-Base Voltage VCBO 500 400 V
Collector-Emitter Voltage VCEO 400 350 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 300 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance JA 200 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C) MPSA44 MPSA45
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=400V - 100 - - nA
ICBO V
CB=320V - - - 100 nA
ICES V
CE=400V - 500 - - nA
ICES V
CE=320V - - - 500 nA
IEBO V
EB=4.0V - 100 - 100 nA
BVCBO I
C=100μA 500 - 400 - V
BVCES I
C=100μA 500 - 400 - V
BVCEO I
C=1.0mA 400 - 350 - V
BVEBO I
E=10μA 6.0 - 6.0 - V
VCE(SAT) I
C=1.0mA, IB=0.1mA - 0.40 - 0.40 V
VCE(SAT) I
C=10mA, IB=1.0mA - 0.50 - 0.50 V
VCE(SAT) I
C=50mA, IB=5.0mA - 0.75 - 0.75 V
VBE(SAT) I
C=10mA, IB=1.0mA - 0.75 - 0.75 V
hFE V
CE=10V, IC=1.0mA 40 - 40 -
hFE V
CE=10V, IC=10mA 50 200 50 200
hFE V
CE=10V, IC=50mA 45 - 45 -
hFE V
CE=10V, IC=100mA 40 - 40 -
fT V
CE=10V, IC=10mA, f=10MHz 20 - 20 - MHz
Cob V
CB=20V, IE=0, f=1.0MHz - 6.0 - 6.0 pF
Cib V
EB=0.5V, IC=0, f=1.0MHz - 110 - 110 pF
TO-92 CASE
R1 (18-March 2014)
www.centralsemi.com
MPSA44
MPSA45
SILICON
HIGH VOLTAGE
NPN TRANSISTORS
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (18-March 2014)
MPSA44
MPSA45
SILICON
HIGH VOLTAGE
NPN TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (18-March 2014)
www.centralsemi.com
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