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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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1. Product profile
1.1 General description
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted
Device (SMD) plastic packages.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors;
R1 = 10 k, R2 = 47 k
Rev. 5 — 12 November 2013 Product data sheet
Table 1. Product overview
Type number Package PNP/PNP
complement NPN/PNP
complement Package
configuration
NXP JEITA
PEMH9 SOT666 - PEMB9 PEMD9 ultra small and flat lead
PIMH9 SOT457 SC-74 - - small
PUMH9 SOT363 SC-88 PUMB9 PUMD9 very small
100 mA output current capability Reduces component count
Built-in bias resistors Reduces pick and place costs
Simplifies circuit design AEC-Q101 qualified
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transis tor
VCEO collector-emitter voltage open base - - 50 V
IOoutput current - - 100 mA
R1 bias resistor 1 (input) 7 10 13 k
R2/R1 bias resistor ratio 3.7 4.7 5.7
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 2 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 GND (emitter) TR1
2 input (base) TR1
3 output (collector) TR2
4 GND (emitter) TR2
5 input (base) TR2
6 output (collector) TR1
001aab555
6 45
1 32
65 4
123
R2
TR1 TR2
R1
R2 R1
sym063
Tabl e 4. Ordering information
Type number Package
Name Description Version
PEMH9 - plastic surface-mounted package; 6 leads SOT666
PIMH9 SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT4 57
PUMH9 SC-88 plastic surface-mounte d package; 6 leads SOT363
Table 5. Marking codes
Type number Marking code[1]
PEMH9 H9
PIMH9 H9
PUMH9 H*9
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 3 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transis tor
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 6 V
VIinput voltage
positive - +40 V
negative - 6V
IOoutput current - 100 mA
ICM peak collector current single pulse;
tp1ms -100mA
Ptot total power dissipation Tamb 25 C
PEMH9 (SOT666) [1] -200mW
PIMH9 (SOT457) [1] 250 mW
PUMH9 (SOT363) [1] -200mW
Per device
Ptot total power dissipation Tamb 25 C
PEMH9 (SOT666) [1] -300mW
PIMH9 (SOT457) [1] 400 mW
PUMH9 (SOT363) [1] -300mW
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 4 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
(1) SOT457; FR4 PCB, standard footprint
(2) SOT363 and SOT666; FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves
Tamb (°C)
-75 17512525 75-25
006aac766
200
300
100
400
500
Ptot
(mW)
0
(1)
(2)
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Per transis tor
Rth(j-a) thermal resistance from
junction to ambient in fre e ai r
PEMH9 (SOT666) [1] - - 625 K/W
PIMH9 (SOT457) [1] - - 500 K/W
PUMH9 (SOT363) [1] - - 625 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient in fre e ai r
PEMH9 (SOT666) [1] - - 417 K/W
PIMH9 (SOT457) [1] - - 313 K/W
PUMH9 (SOT363) [1] - - 417 K/W
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 5 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
FR4 PCB, standard footprint
Fig 2. Per transistor: T ransient thermal impedance from junction to ambient as a function of pulse duration for
PEMH9 (SOT666); typical values
FR4 PCB, standard footprint
Fig 3. Per transistor: T ransient thermal impedance from junction to ambient as a function of pulse duration for
PIMH9 (SOT457); typical values
006aac751
10-5 1010-2
10-4 102
10-1 tp (s)
10-3 103
1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75 0.5
0.33 0.2
0.1
0.05
0.02 0.01
0
006aac767
10-5 1010-2
10-4 102
10-1 tp (s)
10-3 103
1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75 0.5
0.33 0.2
0.1
0.05
0.02 0.01
0
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 6 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
FR4 PCB, standard footprint
Fig 4. Per transistor: T ransient thermal impedance from junction to ambient as a function of pulse duration for
PUMH9 (SOT363); typical values
006aac750
10-5 1010-2
10-4 102
10-1 tp (s)
10-3 103
1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75 0.5
0.33
0.2
0.1 0.05
0.02 0.01
0
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 7 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
7. Characteristics
[1] Characteristics of built-in transistor
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transis tor
ICBO collector-base cut-off
current VCB =50V; I
E= 0 A - - 100 nA
ICEO collector-emitter cut-off
current VCE =30V; I
B= 0 A - - 100 nA
VCE =30V; I
B=0A;
Tj= 150 C--5A
IEBO emitter-base cut-off
current VEB =5V; I
C=0A - - 150 A
hFE DC current gain VCE =5V; I
C= 5 mA 100 - -
VCEsat collector-emitter
saturation voltage IC=5mA; I
B=0.25mA - - 100 mV
VI(off) off-state input voltage VCE =5V; I
C= 100 A- 0.70.5V
VI(on) on-state input voltage VCE =0.3V; I
C=1mA 1.4 0.8 - V
R1 bias resistor 1 (input) 7 10 13 k
R2/R1 bias resistor ratio 3.7 4.7 5.7
Cccollector capacitance VCB =10V; I
E=i
e=0A;
f=1MHz --2.5pF
fTtransition frequency VCE =5V; I
C=10mA;
f=100MHz [1] -230-MHz
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 8 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
VCE =5V
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =40 C
IC/IB=20
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =40 C
Fig 5. DC current gain as a function of collector
current; typical values Fig 6. Collec tor-emitter satu ration voltage as a
function of collector current; typical values
VCE =0.3V
(1) Tamb =40 C
(2) Tamb =25C
(3) Tamb = 100 C
VCE =5V
(1) Tamb =40 C
(2) Tamb =25C
(3) Tamb = 100 C
Fig 7. On-state input voltage as a function of
collector current; typical valu es Fig 8. Off-state input voltage as a function of
collector current; typical values
IC (mA)
10-1 102
101
006aac784
102
10
103
hFE
1
(1)
(2)
(3)
006aac785
IC (mA)
10-1 102
101
10-1
1
VCEsat
(V)
10-2
(1)
(2)
(3)
006aac786
IC (mA)
10-1 102
101
1
10
VI(on)
(V)
10-1
(1)
(2)
(3)
IC (mA)
10-1 101
006aac787
1
10
VI(off)
(V)
10-1
(1)
(2)
(3)
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 9 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
f=1MHz; T
amb =25CV
CE =5V; T
amb =25C
Fig 9. Collector capacitance as a function of
collector-base voltage; typical values Fig 10. Transition frequency as a function of collector
current; typical values of built-in transistor
VCB (V)
0504020 3010
006aac788
1
2
3
Cc
(pF)
0
006aac757
IC (mA)
10-1 102
101
102
103
fT
(MHz)
10
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 10 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
9. Package outline
Fig 11. Package outline PEMH9 (SOT666 ) Fig 12. Package outline PIMH9 (SOT457)
Fig 13. Package outline PUMH9 (SOT363)
Dimensions in mm 04-11-08
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.27
0.17
0.5
pin 1 index
123
456
0.6
0.5
0.3
0.1
04-11-08Dimensions in mm
3.0
2.5 1.7
1.3
3.1
2.7
pin 1 index
1.9
0.26
0.10
0.40
0.25
0.95
1.1
0.9
0.6
0.2
132
4
56
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0 1.35
1.15
2.2
1.8 1.1
0.8
0.45
0.15
132
465
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 11 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
10. Soldering
Fig 14. Reflow soldering footprint PIMH9 (SOT457)
Fig 15. Wave soldering footprint PIMH9 (SOT457)
solder lands
solder resist
occupied area
solder paste
sot457_fr
3.45
1.95
2.8253.3
0.45
(6×)0.55
(6×)
0.7
(6×)
0.8
(6×)2.4
0.95
0.95
Dimensions in mm
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 12 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
Fig 16. Reflow soldering footprint PUMH9 (SOT363)
Fig 17. Wave soldering footprint PUMH9 (SOT363)
solder lands
solder resist
occupied area
solder paste
sot363_fr
2.65
2.35 0.4 (2×)
0.6
(2×)
0.5
(4×)
0.5
(4×)
0.6
(4×)
0.6
(4×)
1.5
1.8
Dimensions in mm
sot363_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
5.3
1.3 1.3
1.5
0.3
1.5
4.5
2.45
2.5
Dimensions in mm
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 13 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
Fig 18. Reflow soldering footprint PEMH9 (SOT666)
solder lands
placement area
occupied area
solder paste
sot666_fr
2.75
2.45
2.1
1.6
0.4
(6×)
0.55
(2×)
0.25
(2×)
0.6
(2×)
0.65
(2×)
0.3
(2×)
0.325
(4×)
0.45
(4×)
0.5
(4×)
0.375
(4×)
1.72
1.7
1.0750.538
Dimensions in mm
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 14 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
11. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change
notice Supersedes
PEMH9_PIMH9_PUMH9 v.5 20131112 Product data sheet - PIMH9_PUMH9_PEMH9 v.4
Modifications: •The format of this document has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Section 1 “Product profile”: updated
•Section 4 “Marking”: updated
•Figure 1 to 10: added
•Section 5 “Limiting values”: updated
•Section 6 “Thermal characteristics”: updated
•Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage, Vi(off) redefined
to VI(off) off-state input voltage, ICEO updated, fT added
•Section 8 “Test in f ormation”: added
•Section 9 “Package outline”: superse ded by minimized package outline drawings
•Section 10 “Soldering”: added
•Section 12 “Legal information”: updated
PIMH9_PUMH9_PEMH9 v.4 20040414 Product data sheet - PIMH9_PUMH9_PEMH9 v.3
PIMH9_PUMH9_PEMH9 v.3 200309 15 Product specification -
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 15 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificat io n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an inf ormation
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidenta l ,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semi conductors’ aggreg ate and cumulative liabil ity towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless ot herwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applicat ions where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications an d ther efo re su ch inclusi on a nd/or use is at the cu stome r's own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
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agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
PEMH9_PIMH9_PUMH9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 12 November 2013 16 of 17
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
No offer to sell or license — Nothing in this document may be interpret ed or
construed as an of fer to sell product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of th e
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
© NXP B.V. 2013. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 November 2013
Document identifier: PEMH9_PIMH9_PUMH9
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
13 Contact information. . . . . . . . . . . . . . . . . . . . . 16
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17