MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Transistors Diodes Nearest metal can Device | or E-line Device Type marking | equivalent | B.S. number* | Page Type marking | BS/CECC number | Page BFS36 u1 2N930 BS 9365 F014 13 BAW63 D1 BS 9302 F001* 15 BFS36A L2 2N929 BS9365 F013 13 BAW63A D2 BS9302 FO02* 15 BFS37 L3 2N2605 BS 9365 F026 13 BAW63B D3 BS 9302 FO03* 15 BFS37A L4 2N2604 BS 9365 F025 13 BAW64 D4 BS 9302 F004* 15 BFS38 c2 zve2 BS 9365 FOIE 13 BAW65 O05 BS 9302 FO05* 15 BFS38A c1 ZT80 BS 9365 F015 13 BAWE66 D6 BS 9302 FO06* 15 BFS39 C3 2783 BS9365 F017 13 BAW67 D7 BS 9302 F007* 15 BFS40 C5 ZT 182 BS 9365 F021 13 BAW68 D8 BS 9302 F008* 15 BFS40A c4 Z1180 BS 9365 F020 13 BZX88-C2V7 w4 15 BFS41 c6 ZT183 BS9365 F022 13 BZX88-C3V0 W5 15 BFS42 P1 Z2T93 BS 9365 F018 13 BZX88-C3V3 W6 15 BFS43 P2 ZT90 BS9365 F019 13 BZX88-C3V6 w7 15 BFS44 P3 ZT210 BS 9365 F023 13 BZX88-C3V9 ws 15 BFS45 P4 Z27T211 BS 9365 F024 13 BZX88-C4V3 ws 15 BFS46 H1 2N918 BS 9365 F047 14 BZx88-C4V7 21 15 BFS46A H2 ZTX321 BS 9365 F048 14 BZX88-C5V1 zZ2 15 BFT27 L5 2N2484 13 BZX88-C5V6 Z3 15 BSS47 L6 ZTX342 BS 9365 F027 13 BZX88-C6V2 Z4 15 BSS56 L7 ZTX341 13 BZX88-C6V8 Z5 15 BSV35 $2 2N2369 BS 9365 F037 14 BZX88-C7V5 Z6 15 BSV35A $1 2N708 BS 9365 F036 14 BZX88-C8V2 Zi 15 BSV36 $3 2N2475 BS 9365 F038 14 BZX88-C9V1 Z8 15 BSV37 $4 2N2894 BS 9365 F039 14 BZX88-C 10 zg 15 BZX88-C11 Y1 15 BZx88-C12 Y2 15 BZX88-C13 3 15 BZX88-C15 4 15 BZX88-C16 Y5 15 BZX88-C18 Y6 15 BZX88-C20 v7 15 BZX88-C22 Y8 15 BZX88-C24 Y9 15 BZX88-C27 x1 15 BZX88-C30 x2 16 BZX88-C33 x3 15 BZX88-C36 x4 15 BZX88-C39 X5 15 BZX88-C43 x6 15 BZX88-(C47 X7 15 *Category P. H14HIGH FREQUENCY TABLE 7NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details of the available range of Ferranti high frequency transistors. hre fr Min. | Noise Figure |Copo Max.| RF, Po or Max, at at at at 1MHz] RF, Pg at Type | Vcs |Vceol Ic - Package Min.|Max.) Ic Ic | N | Ic] f Vcp| mW | f Vv Vi IimA mA|MHz!/mA | dB |mA|MHz| pFj V_ | or dB | MHz 2N918 | 30 | 15 | | 20 _ | K6 | 1] 60) 1.7] 10 | 15dB |} 200 | TO-72 2N2708} 35 | 20 | | 30}200| 2 | 700] 2 \<8.5| 2 | 200/ 1.5) 15 | 15dB | 200} TO-18 TABLE 7a MEDIUM POWER R.F. TRANSISTORS TO 1 WATT Suitable for drivers and general purpose RF amplifiers. Maximum Rating R.F. Performance (Minimum) Type Package Vcso Vceo Vee Pout Pg Fo Volts Volts Volts Watts dB MHz 2N3866 55 30 28.0 0.7 8.5 400 | TO-39 2N4427 40 20 12.0 1.0 10.0 175 TO-39 HIGH VOLTAGE TABLE 8 NPN SILICON PLANAR HIGH VOLTAGE (LOW CURRENT) TRANSISTORS The transistors shown in this table are designed for general applications where device voltages in excess of 100 volts are required. Max Vceisat} Nee IcBo Max at at at Prot Type Ves | Vceo} Ic at Tamb |Package|Comple- ic | Ig | Min.{Max.] Ic Veg | =25C ment Vv ViimA|V |[mA|[mA mA} pA] V mw z7T91 120 | 100 | 1000]1.2 | 200 | 20 | 40 | 120 }200|] 1 | 100} 1000 | TO-39 _ zT92 120 | 100 | 1000/1.2 | 200 | 20} 65 | 200 }200| 1 | 100) 1000 | TO-39 _ ZT93 120 | 80 |1000/0.5 ; 150 | 15] 40 | 120 |150|0.1] 80] 1000 | TO-39 2N2102 | 120 | 65 |1000|0.5 | 150 | 15 | 40 | 120 | 150] 0.1] 120; 1000 | TO-39 | 2N4036 MC10ELECTRICAL CHARACTERISTICS N.P.N. SWITCHING TRANSISTORS Vee} Vce| ton | tote | hre > Vectsat) fr | Cobo Dice T Min.| Min.] Max.) Max. . at le Vee |Max. atlc tg |Min. |Max. Geomet e tee TyPe 7 Tv | ns | ns | Min.[Max.| mA] V | V | mA] mA [MHz| pF " 2N2218A | 75 | 40] 35 | 285) 40] 120| 150} 10 |0.3 | 150} 15 | 250] 8 G5 2N2219A | 75 | 40 | 35 | 285] 100] 300} 150/ 10 |0.3 | 150] 15 | 300}; 8 G5 2N2221A | 75 | 40 | 35 | 285] 40] 120) 150/10 | 0.3 | 150] 15 | 250) 8 G5 2N2222A | 75 | 40 | 35 | 285] 100} 300/ 150] 10 |0.3 | 150 | 15 300 | 8 G5 2N2218 60 30 | 35] 285! 40] 120] 150] 10 |0.4 | 150] 15 | 250] 8 G5 2N2219 60 30 | 35 | 285] 100] 300] 150); 10 | 0.4 | 150] 15 | 250; 8 G5 2N2221 60 30 | 35 | 285| 40] 120] 150) 10 | 0.4 | 150] 15 | 250] 8 G5 2N2222 60 30 | 35 | 285] 100] 300] 150) 10 | 0.4 | 150] 15 ; 250/ 8 G5 2N2369 40 15 12 18| 40] 120 10 1 10.24] 10 1|500/] 4 G18 2N2369A | 40 15 12 18| 40} 120 10 1 |0.2 10 1/500] 4 G18 P.N.P. SWITCHING TRANSISTORS Vep| Vce| ton | tore | *< bre Vce(sat) fr | Cobo . Min.) Min.}| Max.) Max. at le Vee |Max. at!le Ig |Min. |Max. Dice Type - Geometry Vv Vv ns | ns | Min.|Max.} mA} V Ve} mA | mA |MHz] pF 2N2907A | 60 60 | 45 | 100] 100 | 300 | 150 | 10 0.4; 150; 15 | 200] 8 G7 2N2907 60 40 | 45; 100] 100 | 300 | 150 | 10 0.4 | 150] 15 | 200] 8 G7 2N2894 12 12 60 90 40 | 150 30 0.5] 0.5 | 100 | 10 | 400 6 G8 N.P.N. HIGH FREQUENCY TRANSISTORS Mee | Mare TE Give | winat 8" at vec | Min. | Ma ; in. in. at Ie at Vce in. a at Vce in. jax. Dice T ice Type FT. | ma | Vv | mw | MHz | v | GHz} ae | Seomety 2N918 30 15 20 3 1 30 500 10.0 0.6 6 G14 Veeisat), fr and Cop, are parameters which are assembly dependent and figures quoted are those typically achieved on Ferranti assembly lines. SD12