Six IGBT
NX-Series Module
150 Amperes/1200 Volts
CM150DX-24S
103/13 Rev. 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Description:
Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
with each transistor having a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM150DX-24S is a 1200V (VCES),
150 Ampere Six IGBT Power
Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 150 24
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.98 152.0
B 2.44 62.0
C 0.67+0.04/-0.02 17.0+1.0/-0.5
D 5.39 137.0
E 4.79 121.7
F 4.33±0.02 110.0±0.5
G 3.89 99.0
H 3.72 94.5
J 0.53 13.5
K 0.15 3.81
L 1.64 41.66
M 0.30 7.75
N 1.95 49.53
P 0.9 22.86
Q 0.55 14.0
R 0.87 22.0
S 0.67 17.0
T 0.48 12.0
U 0.24 6.0
V 0.16 4.2
W 0.37 6.5
X 0.83 21.14
Y M6 M6
Z 1.53 39.0
Dimensions Inches Millimeters
AA 1.97±0.02 50.0±0.5
AB 2.26 57.5
AC 0.22 Dia. 5.5 Dia.
AD 0.6 15.0
AE 0.51 13.0
AF 0.27 7.0
AG 0.03 0.8
AH 0.81 20.5
AJ 0.12 3.0
AK 0.14 3.5
AL 0.26 6.5
AM 0.53 13.5
AN 0.15 3.81
AP 0.05 1.15
AQ 0.025 0.65
AR 0.29 7.4
AS 0.05 1.2
AT 0.17 Dia. 4.3 Dia.
AU 0.102 Dia. 2.6 Dia.
AV 0.088 Dia. 2.25 Dia.
AW 0.12 3.0
AX 0.49 12.5
AY 0.14 3.75
G2(38)
C2E1(24) C2E1(23)
Tr 2
Di2 Di1 Tr 1
Es2(39)
E2
(47)
C1
(48)
Th
TH1
(1)
TH2
(2)
G1(15)
Cs1(22)
Es1(16)
NTC
DETAIL "B"
A
D
E
FJ J
AR
Z
AA
AB
B
AH
AJ
AX
AW
AL
AM
AK
AE
S
AS
AN AQ
AF
AG
AY
AT
AU
AV
AP
G
H
P
C
X
T
T
S
S
Q
R
Q
N
V
U
U
W
AC (4 PLACES)
M
AD
KK
K
Y
(4 PLACES)
DETAIL "A"
DETAIL "B"
DETAIL "A"
12 345678910111213141516171819202122
23
24
48
47
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
To lerance Otherwise Specified (mm)
The tolerance of size between
terminals is assumed to ±0.4
Division of Dimension To lerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
L
CM150DX-24S
Six IGBT NX-Series Module
150 Amperes/1200 Volts
203/13 Rev. 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts
Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts
Collector Current (DC, TC = 120°C)*2,*4 IC 150 Amperes
Collector Current (Pulse)*3 ICRM 300 Amperes
Total Power Dissipation (TC = 25°C)*2,*4 Ptot 1150 Watts
Emitter Current (TC = 25°C)*2 IE*1 150 Amperes
Emitter Current (Pulse)*3 IERM*1 300 Amperes
Module
Characteristics Symbol Rating Units
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO 2500 Volts
Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max) 175 °C
Maximum Case Temperature*4 TC(max) 125 °C
Operating Junction Temperature, Continuous Operation (Under Switching) Tj(op) -40 to +150 °C
Storage Temperature Tstg -40 to +125 °C
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
23
24
48
47
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
0 0
29.0
40.8
38.1
29.1
LABEL SIDE
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
Th
0
28.7
37.440.5
78.5
Tr 2
Di2
Tr 1
Di1
CM150DX-24S
Six IGBT NX-Series Module
150 Amperes/1200 Volts
303/13 Rev. 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Electrical Characteristics, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V 1.0 mA
Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 5.4 6.0 6.6 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C*5 1.80 2.25 Volts
(Terminal) IC = 150A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts
IC = 150A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C*5 1.70 2.15 Volts
(Chip) IC = 150A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts
IC = 150A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts
Input Capacitance Cies 15 nF
Output Capacitance Coes VCE = 10V, VGE = 0V 3.0 nF
Reverse Transfer Capacitance Cres 0.25 nF
Gate Charge QG VCC = 600V, IC = 150A, VGE = 15V 350 nC
Turn-on Delay Time td(on) — 800 ns
Rise Time tr VCC = 600V, IC = 150A, VGE = ±15V, 200 ns
Turn-off Delay Time td(off) RG = 0Ω, Inductive Load 600 ns
Fall Time tf 300 ns
Emitter-Collector Voltage VEC*1 IE = 150A, VGE = 0V, Tj = 25°C*5 1.80 2.25 Volts
(Terminal) IE = 150A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts
IE = 150A, VGE = 0V, Tj = 150°C*5 — 1.80 — Volts
Emitter-Collector Voltage VEC*1 IE = 150A, VGE = 0V, Tj = 25°C*5 1.70 2.15 Volts
(Chip) IE = 150A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts
IE = 150A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts
Reverse Recovery Time trr*1 VCC = 600V, IE = 150A, VGE = ±15V 300 ns
Reverse Recovery Charge Qrr*1 RG = 0Ω, Inductive Load 8.0 µC
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 100A, VGE = ±15V — 24.2 — mJ
Turn-off Switching Energy per Pulse Eoff RG = 0Ω, Tj = 150°C 16.0 mJ
Reverse Recovery Energy per Pulse Err*1 Inductive Load — 12.2 — mJ
Internal Lead Resistance RCC' + EE' Main Terminals-Chip, 1.8 mΩ
Per Switch,TC = 25°C*4
Internal Gate Resistance rg Per Switch — 13 —
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
23
24
48
47
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
0 0
29.0
40.8
38.1
29.1
LABEL SIDE
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
Th
0
28.7
37.440.5
78.5
Tr 2
Di2
Tr 1
Di1
CM150DX-24S
Six IGBT NX-Series Module
150 Amperes/1200 Volts
403/13 Rev. 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)
NTC Thermistor Part
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R25 TC = 25°C*4 4.85 5.00 5.15 kΩ
Deviation of Resistance R/R TC = 100°C*4, R100 = 493Ω -7.3 +7.8 %
B Constant B(25/50) Approximate by Equation*6 — 3375 — K
Power Dissipation P25 TC = 25°C*4 10 mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per Inverter IGBT 0.13 K/W
Thermal Resistance, Junction to Case*4 Rth(j-c)D Per Inverter FWDi 0.23 K/W
Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied, 15 K/kW
Case to Heatsink*4 Per 1 Module*7
Mechanical Characteristics
Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb
Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb
Creepage Distance ds Terminal to Terminal 11.55 mm
Terminal to Baseplate 12.32 mm
Clearance da Terminal to Terminal 10.00 mm
Terminal to Baseplate 10.85 mm
Weight m — 350 — Grams
Flatness of Baseplate ec On Centerline X, Y*8 ±0 — ±100 µm
Recommended Operating Conditons, Ta = 25°C
DC Supply Voltage VCC Applied Across P-N Terminals 600 850 Volts
Gate-Emitter Drive Voltage VGE(on) Applied Across 13.5 15.0 16.5 Volts
G1-Es1/G2-Es2 Terminals
External Gate Resistance RG Per Switch 0 30
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 B(25/50) = In( R25)/( 11 )
R50 T25 T50
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
HEATSINK SIDE
– : CONCAVE
+ : CONVEX
– : CONCAVE
X
Y
+ : CONVEX
HEATSINK SIDE
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
23
24
48
47
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
0 0
29.0
40.8
38.1
29.1
LABEL SIDE
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
Th
0
28.7
37.440.5
78.5
Tr 2
Di2
Tr 1
Di1
CM150DX-24S
Six IGBT NX-Series Module
150 Amperes/1200 Volts
503/13 Rev. 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
0 1.0 0.5 2.51.5 2.0 3.0
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CHIP - TYPICAL)
102
103
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
10
6 8 10 1412 16 18 20
8
6
4
2
0
Tj = 25°C
IC = 300A
IC = 150A
IC = 60A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
0 2 4 6 8 10
0
VGE = 20V
10
11
12
13.5
15
9
Tj =
25°C
300
100
200
50
150
250
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
3.5
2.5
3.0
0
2.0
1.5
0.5
1.0
0300100 20050 150 250
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
CM150DX-24S
Six IGBT NX-Series Module
150 Amperes/1200 Volts
603/13 Rev. 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE VS. VCE
(TYPICAL)
100102
102
101
100
10-2
10-1
101
VGE = 0V
Cies
Coes
Cres
10-1
COLLECTOR CURRENT, IC, (AMPERES)
103
101102
102
101
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
tf
103
COLLECTOR CURRENT, IC, (AMPERES)
103
101102
102
101
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
tf
103
EXTERNAL GATE RESISTANCE, RG, ()
103
101
100
101
102
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 150A
Tj = 125°C
Inductive Load
tf
102
CAPACITANCE, Cies, Coes, Cres, (nF)
SWITCHING TIME, (ns)
SWITCHING TIME, (ns)
SWITCHING TIME, (ns)
CM150DX-24S
Six IGBT NX-Series Module
150 Amperes/1200 Volts
703/13 Rev. 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
EXTERNAL GATE RESISTANCE, RG, ()
103
101
100
101
102
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 150A
Tj = 150°C
Inductive Load
tf
102
GATE CHARGE, QG, (nC)
GATE CHARGE VS. VGE
20
0
15
10
5
0
100 200 300 500400
IC = 150A
VCC = 600V
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101102
102
101
103
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
Irr
trr
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101102
102
101
103
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
Irr
trr
SWITCHING TIME, (ns)
GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns)
REVERSE RECOVERY, Irr (A), trr (ns)
CM150DX-24S
Six IGBT NX-Series Module
150 Amperes/1200 Volts
803/13 Rev. 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
GATE RESISTANCE, RG, ()
102
10-1 100101
101
100
102
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
VCC = 600V
VGE = ±15V
IC/IE = 150A
Tj = 125°C
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
102
101
100
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
102
101
101102
100
103
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
Eon
Eoff
Err
Eon
Eoff
Err
Eon
Eoff
Err
GATE RESISTANCE, RG, ()
102
10-1 100101
101
100
102
VCC = 600V
VGE = ±15V
IC/IE = 150A
Tj = 125°C
Eon
Eoff
Err
101102103
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
CM150DX-24S
Six IGBT NX-Series Module
150 Amperes/1200 Volts
903/13 Rev. 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
100
10-1
10-2
10-3
10-5 10-3
10-4 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.13°K/W
(IGBT)
Rth(j-c) =
0.23°K/W
(FWDi)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')