HS1AFL - HS1MFL
Taiwan Semiconductor
1 Version:A1804
1A, 50V - 1000V High Efficient Surface Mount Rectifier
FEATURES
Glass passivated junction chip
Ideal for automated placement
Low profile package
Low power loss, high efficiency
Fast switching for high efficiency
Moisture sensitivity level: level 1, per J-STD-020
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
High frequency rectification
Freewheeling application
Switching mode converters and inverters in computer
and telecommunication.
MECHANICAL DATA
Case: SOD-123FL
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 0.019 g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF
1
A
VRRM
50 - 1000
V
IFSM
30
A
TJ MAX
150
°C
Package
SOD-123FL
SOD-123FL
PARAMETER
SYMBOL
HS1A
FL
HS1B
FL
HS1D
FL
HS1F
FL
HS1G
FL
HS1J
FL
HS1K
FL
HS1M
FL
UNIT
Marking code on the
device
HAF
HBF
HDF
HFF
HGF
HJF
HKF
HMF
Repetitive peak reverse
voltage
VRRM
50
100
200
300
400
600
800
1000
V
Reverse voltage, total rms
value
VR(RMS)
35
70
140
210
280
420
560
700
V
Forward current
IF
1
A
Surge peak forward
current, 8.3 ms single half
sine-wave superimposed
on rated load per diode
IFSM
30
A
Junction temperature
TJ
- 55 to +150
°C
Storage temperature
TSTG
- 55 to +150
°C
HS1AFL - HS1MFL
Taiwan Semiconductor
2 Version:A1804
PARAMETER
SYMBOL
TYP.
UNIT
Junction-to-lead thermal resistance per diode
RӨJL
17
°C/W
Junction-to-ambient thermal resistance per diode
RӨJA
85
°C/W
Junction-to-case thermal resistance per diode
RӨJC
19
°C/W
Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)
PARAMETER
CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Forward voltage per diode (1)
HS1AFL
HS1BFL
HS1DFL
HS1FFL
IF = 0.5A, TJ = 25°C
VF
0.82
-
V
IF = 1.0A, TJ = 25°C
0.89
0.95
V
IF = 0.5A, TJ = 125°C
0.67
-
V
IF = 1.0A, TJ = 125°C
0.75
0.81
V
Forward voltage per diode (1)
HS1GFL
IF = 0.5A, TJ = 25°C
VF
0.93
-
V
IF = 1.0A, TJ = 25°C
1.01
1.30
V
IF = 0.5A, TJ = 125°C
0.74
-
V
IF = 1.0A, TJ = 125°C
0.85
1.10
V
Forward voltage per diode (1)
HS1JFL
HS1KFL
HS1MFL
IF = 0.5A, TJ = 25°C
VF
1.21
-
V
IF = 1.0A, TJ = 25°C
1.36
1.70
V
IF = 0.5A, TJ = 125°C
0.94
-
V
IF = 1.0A, TJ = 125°C
1.10
1.38
V
Reverse current @ rated VR per diode (2)
TJ = 25°C
IR
-
5
µA
TJ = 125°C
-
150
µA
Junction capacitance
HS1AFL
HS1BFL
HS1DFL
HS1FFL
HS1GFL
1 MHz, VR=4.0V
CJ
11
-
pF
HS1JFL
HS1KFL
HS1MFL
6
-
pF
Reverse recovery time
HS1AFL
HS1BFL
HS1DFL
HS1FFL
HS1GFL
IF=0.5A ,IR=1.0A
IRR=0.25A
trr
-
50
ns
HS1JFL
HS1KFL
HS1MFL
trr
-
75
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
HS1AFL - HS1MFL
Taiwan Semiconductor
3 Version:A1804
ORDERING INFORMATION
ORDERING CODE
PACKAGE
PACKING
HS1AFL RVG
SOD-123FL
3,000 / 7" Plastic reel
HS1BFL RVG
SOD-123FL
3,000 / 7" Plastic reel
HS1DFL RVG
SOD-123FL
3,000 / 7" Plastic reel
HS1FFL RVG
SOD-123FL
3,000 / 7" Plastic reel
HS1GFL RVG
SOD-123FL
3,000 / 7" Plastic reel
HS1JFL RVG
SOD-123FL
3,000 / 7" Plastic reel
HS1KFL RVG
SOD-123FL
3,000 / 7" Plastic reel
HS1MFL RVG
SOD-123FL
3,000 / 7" Plastic reel
HS1AFL - HS1MFL
Taiwan Semiconductor
4 Version:A1804
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
0
0.5
1
1.5
25 50 75 100 125 150
Heat sink
5mm x 5mm
Cu pad test board
0.1
1
10
100
110 100
f=1.0MHz
Vsig=50mVp-p
HS1JFL - HS1MFL
HS1AFL - HS1GFL
0.001
0.01
0.1
1
10 20 30 40 50 60 70 80 90 100
TJ=25°C
TJ=125°C
HS1AFL - HS1FFL
0.1
1
10
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
Pulse width 300μs
1% duty cycle
TJ=25°C
TJ=125°C
HS1AFL - HS1FFL
CAPACITANCE (pF)
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
FORWARD VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
REVERSE VOLTAGE (V)
LEAD TEMPERATURE (°C)
HS1AFL - HS1MFL
Taiwan Semiconductor
5 Version:A1804
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Typical Reverse Characteristics
Fig.6 Typical Forward Characteristics
Fig.7 Typical Reverse Characteristics
Fig.8 Typical Forward Characteristics
0.001
0.01
0.1
1
10
10 20 30 40 50 60 70 80 90 100
TJ=125°C
TJ=25°C
HS1GFL
0.1
1
10
0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
HS1GFL
Pulse width 300μs
1% duty cycle
TJ=25°C
TJ=125°C
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
TJ=125°C
HS1JFL - HS1MFL
TJ=25°C
0.1
1
10
0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
Pulse width 300μs
1% duty cycle
TJ=25°C
TJ=125°C
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
FORWARD VOLTAGE (V)
HS1JFL - HS1MFL
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
FORWARD VOLTAGE (V)
HS1AFL - HS1MFL
Taiwan Semiconductor
6 Version:A1804
PACKAGE OUTLINE DIMENSIONS
SOD-123FL
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N = Marking Code
YW = Date Code
F = Factory Code
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
0.80
1.15
0.031
0.045
B
1.70
2.10
0.067
0.083
C
2.60
3.10
0.102
0.122
D
0.88
1.35
0.035
0.053
E
0.10
0.30
0.004
0.012
F
0.30
0.90
0.012
0.035
G
3.45
3.95
0.136
0.156
Symbol
Unit (mm)
Unit (inch)
A
1.4
0.055
B
1.2
0.047
C
3.1
0.122
D
1.9
0.075
E
4.3
0.169
HS1AFL - HS1MFL
Taiwan Semiconductor
7 Version:A1804
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.