IRFP32N50KS
12/18/01
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SMPS MOSFET HEXFET® Power MOSFET
VDSS RDS(on)typ. ID
500V 0.135Ω32A
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 32
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 20 A
IDM Pulsed Drain Current 130
PD @TC = 25°C Power Dissipation 460 W
Linear Derating Factor 3.7 W/ °C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 13 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case ) °C
Mounting torque, 6-32 or M3 screw 10lb*in (1.1N*m)
Absolute Maximum Ratings
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 450 mJ
IAR Avalanche Current––– 32 A
EAR Repetitive Avalanche Energy––– 46 mJ
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.26
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40
Thermal Resistance
Avalanche Characteristics
lSwitch Mode Power Supply (SMPS)
lUninterruptible Power Supply
lHigh Speed Power Switching
lHard Switched and High Frequency
Circuits
Benefits
Applications
lLow Gate Charge Qg results in Simple
Drive Requirement
lImproved Gate, Avalanche and Dynamic
dv/dt Ruggedness
lFully Characterized Capacitance and
Avalanche Voltage and Current
lLow RDS(on)
PD - 94360
SMD-247
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Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– VV
GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.54 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 0.135 0.16 ΩVGS = 10V, ID = 32A
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
––– ––– 50 µA VDS = 500V, VGS = 0V
––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ 32A, di/dt ≤ 197A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting T J = 25°C, L = 0.87mH, RG = 25Ω,
IAS = 32A,
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 14 ––– ––– SV
DS = 50V, ID = 32A
QgTotal Gate Charge ––– ––– 190 ID = 32A
Qgs Gate-to-Source Charge ––– ––– 59 nC VDS = 400V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 84 VGS = 10V
td(on) Turn-On Delay Time ––– 28 ––– VDD = 250V
trRise Time ––– 120 ––– ID = 32A
td(off) Turn-Off Delay Time ––– 48 ––– RG = 4.3Ω
tfFall Time ––– 54 ––– VGS = 10V
Ciss Input Capacitance ––– 5280 ––– VGS = 0V
Coss Output Capacitance ––– 550 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 45 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 5630 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 155 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 265 ––– VGS = 0V, VDS = 0V to 400V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, I S = 32A, V GS = 0V
trr Reverse Recovery Time ––– 530 800 ns TJ = 25°C, IF = 32A
Qrr Reverse RecoveryCharge ––– 9.0 13.5 µC di/dt = 100A/µs
IRRM Reverse RecoveryCurrent ––– 30 ––– A
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
S
D
G
Diode Characteristics
32
130 A
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
IRFP32N50KS
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
5.0V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
5.0V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
0.1
1
10
100
1000
4578911 12
V = 50V
20
µ
s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 150 C
J°
T = 25 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
32A
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100 1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
040 80 120 160 200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D32A
V = 100V
DS
V = 250V
DS
V = 400V
DS
0.1
1
10
100
1000
0.2 0.6 0.9 1.3 1.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J°
T = 25 C
J°
1
10
100
1000
10 100 1000 10000
OPERATION IN THIS AREA LIMITED
BY RDS
(
on
)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRFP32N50KS
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Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0
5
10
15
20
25
30
35
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFP32N50KS
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QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Fig 13a. Gate Charge Test Circuit Fig 13b. Basic Gate Charge Waveform
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
Fig 12d. Unclamped Inductive Waveforms
Fig 12c. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
160
320
480
640
800
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
14A
20A
32A
IRFP32N50KS
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRFP32N50KS
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SMD-247 Part Marking Information
SMD-247 Package Outline
2X R
Ø
A
0.25 [.010] D B
0.25 [.010] D C A
C
B
D
123
4
2.65 [.104]
2.15 [.085]
0.20 [.225] D
2X
0.25 [.010] DB
0.95 [.037]
0.35 [.014]
2X
1. DIMENSIONING & TOLER ANCING PE R ASME Y14 .5M-1994.
4. TO- 247 S MD IS A MODIFIED TO-247AC.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INC HES].
2. CONTROL LING DIMENSION: MILLIMETER.
NOTES:
3 - SOUR CE
4 - DRAIN
MOSFET
1 - GATE
2 - DRAIN 3 - EMITTER
4 - COL L ECT OR
2 - COL L ECT OR
1 - GATE
IGBT
LEAD AS SIGNMENTS
3.0 [.118]
MAX.
2.75 [.108]
2.25 [.089]
3.65 [.143]
3.55 [.140]
2X
5.45 [.215] 1. 40 [. 055]
1.00 [.040]
20.30 [.799]
19.70 [.776]
5.65 [.222]
4.65 [.183]
5.50 [.217]
0.80 [.031]
0.40 [.016]
4
2.50 [.099]
1.50 [.060]
5.30 [.208]
4.70 [.186] 13. 70 [.539]
13.50 [.532]
16.20 [.637]
16.00 [.630]
15.90 [.625]
15.30 [.603]
5.70 [.224]
5.30 [.209]
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
PART N UMBER
ASSEMBLY LOT CODE 3A1Q
THIS IS AN IRFP450S WITHEXAMPLE:
LOT CODE
ASSEMBLY 3A1Q 9906
INTERNATIONAL IRFP450S
RECTIFIER
LOGO
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/01
