© 2011 IXYS CORPORATION, All Rights Reserved DS99336B(11/11)
VDSS = 500V
ID25 = 62A
RDS(on) ≤≤
≤≤
≤ 100mΩΩ
ΩΩ
Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C62A
IDM TC= 25°C, Pulse Width Limited by TJM 150 A
IATC= 25°C80A
EAS TC= 25°C5J
PDTC= 25°C 800 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
FCMounting Force 30..120/6.7..27 N/lb.
Weight 10 g
IXTB62N50L
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 500 V
VGS(th) VDS = VGS, ID = 250μA 3.0 5.5 V
IGSS VGS = ± 30V, VDS = 0V ± 200 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 1 mA
RDS(on) VGS = 20V, ID = 0.5 • ID25, Note 1 100 mΩ
Features
zFast Intrinsic Diode
zAvalanche Rated
zLow RDS(ON) and QG
zLow Package Inductance
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zProgrammable Loads
zDC-DC Converters
zCurrent Regulators
zBattery Chargers
zDC Choppers
zTemperature and Lighting
Controls
G = Gate D = Drain
S = Source Tab = Drain
PLUS264TM
Tab
S
G
D
LinearTM Power MOSFET
w/Extended FBSOA
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTB62N50L
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 10 15 20 S
Ciss 11.5 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1460 pF
Crss 210 pF
td(on) 36 ns
tr 85 ns
td(off) 110 ns
tf 75 ns
Qg(on) 550 nC
Qgs VGS = 20V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 115 nC
Qgd 180 nC
RthJC 0.156 °C/W
RthCS 0.15 °C/W
Safe Operating Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA VDS = 400V, ID = 750mA, TC = 90°C 300 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 62 A
ISM Repetitive, Pulse Width Limited by TJM 176 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 500 ns
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IF = IS, VGS = 0V
-di/dt = 100A/μs, VR = 100V
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
PLUS264TM (IXTB) Outline
© 2011 IXYS CORPORATION, All Rights Reserved
IXTB62N50L
Fig. 1. Output Characteristics @ TJ = 25ºC
0
10
20
30
40
50
60
0123456
V
DS
- Vo lts
I
D
- Amperes
V
GS
= 20V
16V
14V
10
V
7
V
8
V
9
V
12
V
Fig. 2. Extended Output Characteristics @ T J = 25ºC
0
20
40
60
80
100
120
140
0 2 4 6 8 101214161820
V
DS
- Vo lts
I
D
- Amperes
V
GS
= 20V
16V
14
V
8
V
7
V
9
V
10
V
12
V
Fig. 3. Output Characteristics @ T J = 125ºC
0
10
20
30
40
50
60
02468101214
V
DS
- Vo lts
I
D
- Amperes
8V
7V
6V
V
GS
= 20V
14V
9
V
10
V
12
V
Fig. 4. RDS(on) Normalized to ID = 31A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Deg r ees Ce nti grade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 62A
I
D
= 31A
Fig. 5. RDS(on) Normalized to ID = 31A Value vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
0 20406080100120140
I
D
- A mperes
R
DS(on)
- Normalized
V
GS
= 20V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temp er atur e
0
10
20
30
40
50
60
70
-50 -25 0 25 50 75 100 125 150
T
C
- Deg r ees Ce nti grade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTB62N50L
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
4567891011121314
V
GS
- Volt s
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. T ransconductance
0
5
10
15
20
25
30
0 102030405060708090100
I
D
- Amp e res
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
40
80
120
160
200
240
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
18
20
0 50 100 150 200 250 300 350 400 450 500 550
Q
G
- NanoCoul ombs
V
GS
- Volts
V
DS
= 250V
I
D
= 31A
I
G
= 10mA
Fi g . 11. Cap aci tan ce
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lt s
Capacit ance - Pi coFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maxi mum Transi en t Thermal Impedan ce
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
© 2011 IXYS CORPORATION, All Rights Reserved
IXTB62N50L
IXYS REF: T_62N50L(9N) 11-04-11-B
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 25º C
0.1
1
10
100
1000
10 100 1,000
V
DS
- Vo lts
I
D
- Amp e re s
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
10ms
1ms
R
DS(on)
Limit
DC
25µs
Fig. 14. Forward-Bias Safe Operating Area
@ T
C
= 90ºC
0.1
1
10
100
1000
10 100 1,000
V
DS
- Volt s
I
D
- Am peres
T
J
= 150ºC
T
C
= 90ºC
Single Pulse
100µs
10ms
1ms
R
DS(on)
Limit
DC
25µs
