SMBTA 42M
Oct-14-19991
NPN Silicon High-Voltage Transistor
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: SMBTA 92M (PNP)
VPW05980
1
23
5
4
Type Marking Pin Configuration Package
SMBTA 42M s1D 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595
Maximum Ratings
Parameter Symbol UnitValue
V
VCEO 300Collector-emitter voltage
Collector-base voltage VCBO 300
6Emitter-base voltage VEBO
mADC collector current 500
IC
100Base current IB
Total power dissipation, TS ≤ 83 °C Ptot W1.5
150 °CJunction temperature Tj
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction ambient 1) RthJA ≤100 K/W
Junction - soldering point RthJS ≤45
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
SMBTA 42M
Oct-14-19992
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol UnitValues
typ. max.min.
DC characteristics
V(BR)CEO 300Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
- V-
V(BR)CBO 300Collector-base breakdown voltage
IC = 10 µA, IB = 0
--
V(BR)EBO 6 -Emitter-base breakdown voltage
IE = 10 µA, IC = 0
-
ICBO - 100Collector cutoff current
VCB = 200 V, IE = 0
nA-
ICBO - -Collector-base cutoff current
VCB = 200 V, TA = 150 °C
20 µA
- - 100
IEBO
Emitter cutoff current
VEB = 3 V, IC = 0
nA
DC current gain 1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
hFE
25
40
40
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VCEsat - - 0.5 V
Base-emitter saturation voltage 1)
IC = 20 mA, IB = 2 mA
VBEsat - - 0.9
AC Characteristics
--Transition frequency
IC = 10 mA, VCE = 20 V, f = 100 MHz
fTMHz50
-Collector-base capacitance
VCB = 20 V, f = 1 MHz
Ccb 3 pF-
1) Pulse test: t < 300µs; D < 2%
SMBTA 42M
Oct-14-19993
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
TA,TS
0
200
400
600
800
1000
1200
1400
mW
1800
P
tot
TS
0 20 40 60 80 100 120 °C 150
TA,TS
0
200
400
600
800
1000
1200
1400
mW
1800
P
tot
TA
0 20 40 60 80 100 120 °C 150
TA,TS
0
200
400
600
800
1000
1200
1400
mW
1800
P
tot
DC current gain hFE = f (IC)
VCE = 10V
EHP00844SMBTA 42/43
10
10 mA
h
C
10
5
FE
10
3
1
10
0
5
10 10 10
-1 0 1 2 3
Ι
5
10
2
555
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
SMBTA 42M
Oct-14-19994
Collector cutoff current ICBO = f (TA)
VCB = 160V
EHP00842SMBTA 42/43
10
0C
A
150
nA
CBO
10
4
1
10-1
5
50 100
5
102
100
5
Ι
T
max
typ
5
103
Collector current IC = f (VBE)
VCE = 10 V
EHP00843SMBTA 42/43
10
0V
BE
1.5
mA
C
10
3
1
10
-1
5
0.5 1.0
10
0
5
Ι
V
5
10
2
