BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBTA63/MMBTA64
Document number: BL/SSSTC124 www.galaxycn.com
Rev.A 1
FEATURES
z Epitaxial planar die construction. Pb
Lead-free
z Complementary NPN type available
(MMBTA13/MMBTA14).
z High current gain.
APPLICATIONS
z Ideal for medium power amplification and switching
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBTA63 2U SOT-23
MMBTA64 2V SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value UNIT
VCBO
collector-base voltage MMBTA63
MMBTA64
-30
-30 V
VCEO
collector-emitter voltage MMBTA63
MMBTA64
-30
-30 V
VEBO emitter-base voltage -10 V
ICcollector current (DC) -0.3 A
PCCollector dissipation 0.35 W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Tj ,Tstg junction and storage temperature -55-150 °C