Data Sheet, Doc. No. 5SYA 1424-01 08-2012
5SLD 1200J450350
HiPak DIODE Module
VRRM = 4500 V
IF = 2 x 1200 A
Ultra low-loss, rugged SPT+ diode
Smooth switching SPT+ diode for good EMC
AlSiC base-plate for high power cycling capability
AlN substrate for low thermal resistance
2 diodes in 1 package
Maximum rated values 1)
Symbol
Conditions
min
max
Unit
VRRM
Tvj ≥ 25 °C
4500
V
IF
1200
A
IFRM
tp = 1 ms, per Diode
2400
A
Ptot
TC = 25 °C, Tvj = 125 °C, per Diode
5300
W
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave, per Diode
9000
A
Visol
1 min, f = 50 Hz
10200
V
Tvj
150
°C
Tvj(op)
-50
125
°C
TC
-50
125
°C
Tstg
-50
125
°C
Ms
Base-heatsink, M6 screws
4
6
Nm
Mt1
Main terminals, M8 screws
8
10
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA 2039
2 5SLD 1200J450350 | Doc. No. 5SYA 1424-01 08-2012
Diode characteristic values 3)
Parameter
Symbol
Conditions
min
typ
max
Unit
Forward voltage 4)
VF
IF = 1200 A
Tvj = 25 °C
3.2
3.7
V
Tvj = 125 °C
3.5
4.0
V
Continuous reverse current
IR
VR = 4500 V
Tvj = 25 °C
0.5
mA
Tvj = 125 °C
23
46
mA
Reverse recovery current
Irr
VCC = 2800 V,
IF = 1200 A,
di/dt = 4.8 kA/µs
L = 150 nH, inductive load
switch: 5SNA 1200G450350
Per Diode
Tvj = 25 °C
1460
A
Tvj = 125 °C
1600
A
Recovered charge
Qrr
Tvj = 25 °C
1030
µC
Tvj = 125 °C
1660
µC
Reverse recovery time
trr
Tvj = 25 °C
1270
ns
Tvj = 125 °C
1860
ns
Reverse recovery energy
Erec
Tvj = 25 °C
1630
mJ
Tvj = 125 °C
2730
mJ
3) Characteristic values according to IEC 60747 – 2
4) Forward voltage is given at chip level
Package properties 5)
Parameter
Symbol
Conditions
min
typ
max
Unit
Diode thermal resistance
junction to case
Rth(j-c)DIODE
Per Diode
0.019
K/W
Diode thermal resistance 2)
case to heatsink
Rth(c-s)DIODE
Per Diode, grease = 1W/m x K
0.018
K/W
Partial discharge extinction voltage
Ve
f = 50 Hz, QPD 10 pC (acc. To IEC 61287)
5100
V
Comparative tracking index
CTI
600
Module stray inductance
Lσ AC
Per Diode
36
nH
Resistance, terminal-chip
RAA’+CC’
Per Diode
TC = 25 °C
0.2
mΩ
TC = 125 °C
0.3
2) For detailed mounting instructions refer to ABB Document No. 5SYA 2039
Mechanical properties 5)
Parameter
Symbol
Conditions
min
typ
max
Unit
Dimensions
L x W x H
Typical
130 x 140 x 48
mm
Clearance distance in air
da
according to IEC 60664-1
and EN 50124-1
Term. to base:
40
mm
Term. to term:
26
Surface creepage distance
ds
according to IEC 60664-1
and EN 50124-1
Term. to base:
64
mm
Term. to term:
56
Mass
m
1150
g
5) Package and mechanical properties according to IEC 60747 – 15
3 5SLD 1200J450350 | Doc. No. 5SYA 1424-01 08-2012
Electrical configuration
C (7)
A (6)
C (5)
A (4)
Outline drawing 2)
Note: all dimensions are shown in millimeters
2) For detailed mounting instructions refer to ABB Document No. 5SYA 2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
4 5SLD 1200J450350 | Doc. No. 5SYA 1424-01 08-2012
0
500
1000
1500
2000
2500
3000
3500
4000
0400 800 1200 1600 2000 2400
IF [A]
Erec [mJ], Irr [A], Qrr [µC]
VCC = 2800 V
Tvj = 125 °C
L = 150 nH
Erec
Irr
Qrr
VGE = ±15 V
RG = 1.5 ohm
CGE = 220 nF
Aux. switch:
5SNA 1200G450350
0
500
1000
1500
2000
2500
3000
3500
0 1 2 3 4 5 6 7
di/dt [kA/µs]
Erec [mJ], Qrr [µC], Irr [A]
VCC = 2800 V
IF = 1200 A
Tvj = 125 °C
L = 150 nH
RG = 6.8 ohm
RG = 4.7 ohm
RG = 3.3 ohm
RG = 2.2 ohm
RG = 1.5 ohm
RG = 1.0 ohm
Erec
Qrr
Irr
VGE = ±15 V, CGE = 220 nF
Aux. switch:
5SNA 1200G450350
Fig. 1
Typical reverse recovery characteristics vs. forward current
Fig. 2
Typical reverse recovery characteristics vs. di/dt
0
400
800
1200
1600
2000
2400
0 1 2 3 4 5
VF [V]
IF [A]
125 °C
25 °C
0
400
800
1200
1600
2000
2400
01000 2000 3000 4000 5000
VR [V]
IR [A]
VCC 3400 V
di/dt 6500 A/µs
Tvj = 125 °C
L 150 nH
Fig. 3
Typical diode forward characteristics chip level
Fig. 4
Safe operating area diode (SOA)
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t [s]
Zth(j-c) [K/W] DIODE
Zth(j-c) Diode
Analytical function for transient thermal impedance:
)e-(1R = (t)Z
n
1i
t/-
ic)-(jth
i
i
1
2
3
4
5
DIODE
Ri(K/kW)
12.5
4.37
2.16
i(ms)
192
22.6
3.1
Fig. 5
Thermal impedance vs. time
Related documents:
5SYA 2042 Failure rates of HiPak modules due to cosmic rays
5SYA 2043 Load – cycle capability of HiPaks
5SYA 2045 Thermal runaway during blocking
5SYA 2058 Surge currents for IGBT diodes
5SYA 2093 Thermal design of IGBT modules
5SZK 9111 Specification of environmental class for HiPak Storage
5SZK 9112 Specification of environmental class for HiPak Transportation
5SZK 9113 Specification of environmental class for HiPak Operation (Industry)
5SZK 9120 Specification of environmental class for HiPak
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Semiconductors
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Fax: +41 58 586 1306
E-Mail: abbsem@ch.abb.com
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5SLD 1200J450350 | Doc. No. 5SYA 1424-01 08-2012