25C D mM 8235605 o0o41oa T MASIEG | PNP Silicon Transistors STEMENS AKTIENGESELLSCHAF BC 160 an soma BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN 41873). The collector is electrically connected to the case. The transistors are intended for use as complementary transistors to BC 140 and BC 141 and are available upon request as matched pairs. Type Ordering code BC 160!) Q62702-C228 BC 160-6 Q62702-C228-V6 BC 160-10 0Q62702-C228-V10 BC 160-16 Q62702-C228-V16 BC 160 paired Q62702-C228-P 5 in BC 160/BC 140 paired | Q62702-C228-S2 2 BC 1611) Q62702-C252 Sa : BC 161-6 Q62702-C230 BC 161-10 Q62702-C231 _ BC 161-16 Q62702-C239 1351 6.6.0, BC 161 paired Q62702-C230-P BC 161/8C 141 paired Q62702-C230-S2 Approx. weight 1.5g Dimensionsinmm Maximum ratings BC 160 BC 161 ; Collector-base voltage -Vcgo 40 60 Vv Collector-emitter voltage ~Vceo 40 60 v Emitter-base voltage -Veso 5 5 Vv Collector current -Io 1 1 A Base current -Ih 0.1 0.1 A Junction temperature Tj 175 175 c Storage temperature range Tstg ~55 to +175 55 to +175 C Total power dissipation tot 3.7 3.7 Ww Thermal resistance Junction to ambient air Rina 4200 $200 K/AW Junction to case Rene $35 $35 K/W Static characteristics (T,,,, = 25C) The transistors BC 160 and BC 161 are grouped at J, = 100 mA and Vee = 1V according to the DC current gain hee, and are marked by numerals of the DIN standard series. For the Operating points quoted below, the following values apply: - Type BC 160, BC 161 fee group 6 10 16 wl hee hee hee Vee mA Ic/Ig Ic/Ig Iof/lg 0.1 46 80 120 |[- 100 63 (40 to 100) | 100 (63 to 160) 160 (100 to 250) | - 1000 15 20 30 1.0 (<1.7) 1) If the order does not include any exact indication of the current amplification group desired, a transistor of a current amplification group just available from stock will be delivarad. 4 1584 A-LL Rl.SIEMENS AKTIENGESELLSCHAF BC 160 BC 161. Static characteristics (Tam = 25C) BC 160 BC 161 } Collector cutoff current (-Vogs = 40 V or 60 V) Ices 10 (<100) 10(<100) | nA Collector cutoff current (-Vceg = 40 V or 6OV; . Tamb = 150C} Ices 10 (< 100) 10 (<100) | pA Collector-emitter breakdown voltage (Iceg = 50 mA pulse width = 200 usec: duty cycle 1%) -Vier;ceo | >40 >60 Vv Collector-emitter breakdown . voltage (Ices = 100 pA) Visrices >40 >60 Vv Emitter-base breakdown . voltage (~Jego = 100 pA) Viarjego | > 5 >5 V Collector-emitter saturation voltage (Ic = 0.5 A; Jg = 25 mA) Vegaat!! | 0.6 (< 1.0) 0.6 (<1.0) | V Conditions for matching pairs: h FEA _ = = _- . s . (Ig = 100 mA; Vce = 1) Area $1.25 1.25 Dynamic characteristics (Tamp = 25C) Transition frequency (J = 50 mA; Vce = 10 V; f = 20 MHz} & >50 >50 MHz Collector-base capacitance (-Veg = 10 V; f = 1 MHz) Ccso <30 | <30 pF Emitter-base capacitance (Veg = 0.5 V; f = 1 MHz) Ceso <180 <180 pf Test circuit: Vag Vee Switching times for transistors BC 160, BC 161: Dus Wap (-J,=100 mA; Jp, approx. /p2 approx. 5 mA) f<tins t <500 % <19ns on ns R502 tort <650 ns 1) The transistor is overloaded to such an extent that the DC current gain decreases to hee = 20 165 1585 A-12-25C D MM 235605 0004110 8 MESIEG "1-99.93 SIEMENS AKTIENGESELLSCHAF BC 160 Total power dissipation versus temperature Pro, = F(T): Ruy = parameter BC 160 Oto Prot 0 100 200 G Permissible pulse load KK fac = (0; v= parameter W we BC 160, BC 161 fine w b 10 6 wi 5 ao T 10? ww? gh gt 17 mm 0s _S 156; - 1586 A~-13 BC 161 Total power dissipation versus temperature Prot = f(T}: Rin = parameter Ww BC 161 4 to Prot 3 0 100 200C | DC current gain hee = f(c) Vee = 13 Tam = pararneter (common emitter configuration) BC 160, BC 161 10 102 0} 1 ad? 10 1 10'mAa 25C D MMH 8235605 OOO4LIL TMESIEG 9g 9B dik Oo SIEMENS AKTIENGESELLSCHAF oe BC 160 : BC 161 Gollectorexnitter saturation voltage rable a saturation voltage hee Sto; Tan = parameter hee = 10; Tap = parameter (common emitter configuration) {common emitter configuration) mA BC 160, BC 161 mA BC 160, BC 161 v wn Average values ome = Scattering fimit at 0 05 OV ~ Vee sat Wee se Collector cutoff current versus temperature Transition frequeney fy = f (Ic) fono = f (Temp) Veao = 60 V ("Vee = 10V) HA BC 160, 8C-161 MHz BC 160, 8C161 10 ~fog Average value Scattering 10 . Q 50 100 Oe 0 5 wi 6 6 Wm Tan es 158? A-14 _ 187 Peer are me mere)