TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
September 9, 2001
1
Not Recommended for New Designs
TriQuint Recommends the TGA4509-EPU be used for New Designs
27- 32 GHz Ka Band HPA TGA1193-EPU
Key Features
• 0.25 um pHEMT Technology
• 15dB Nominal Gain at 30GHz
• 31.5dBm Psat @ 30GHz Typical
• 37dBm OTOI Typical at 30GHz
• Bias 7 V @ 1.26A
• Chip Dimensions 3.14 mm x 2.63 mm
Primary Applications
• Ka Band Sat-Com Ground Terminals
• Point-to-Point Radio
• Point-to-Multipoint Hubs
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Preliminary Measured Results
TGA1193 Small Signal Gain
0
2
4
6
8
10
12
14
16
18
20
24 25 26 27 28 29 30 31 32 33 34
Frequency (GHz)
Gain (dB)
TGA1193 P1dB
25
27
29
31
33
35
27 28 29 30 31 32
Frequency (GHz)
P1dB (dBm)
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
September 9, 2001
2
Not Recommended for New Designs
TriQuint Recommends the TGA4509-EPU be used for New Designs
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TGA1193-EPU
TGA1193Typical S-Parameters
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
September 9, 2001
3
Not Recommended for New Designs
TriQuint Recommends the TGA4509-EPU be used for New Designs
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TGA1193-EPU
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
September 9, 2001
4
Not Recommended for New Designs
TriQuint Recommends the TGA4509-EPU be used for New Designs
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TGA1193-EPU
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
September 9, 2001
5
Not Recommended for New Designs
TriQuint Recommends the TGA4509-EPU be used for New Designs
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Reflow process assembly notes:
· AuSn (80/20) solder with limited exposure to temperatures at or above 300§C
· alloy station or conveyor furnace with reducing atmosphere
· no fluxes should be utilized
· coefficient of thermal expansion matching is critical for long-term reliability
· storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
· vacuum pencils and/or vacuum collets preferred method of pick up
· avoidance of air bridges during placement
· force impact critical during auto placement
· organic attachment can be used in low-power applications
· curing should be done in a convection oven; proper exhaust is a safety concern
· microwave or radiant curing should not be used because of differential heating
· coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
· thermosonic ball bonding is the preferred interconnect technique
· force, time, and ultrasonics are critical parameters
· aluminum wire should not be used
· discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
· maximum stage temperature: 200§C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA1193-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
