1N485B
1N485B, Rev. A
1N485B
Small Signal Diode
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
DO-35
Color Band Denotes Cathode
2003 Fairchild Semiconductor Corporation
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM Maximum Repet i tive Reverse Voltage 200 V
IF(AV) Average Recti f i ed Forward Current 200 mA
IFSM Non-repetitive P eak Forward Surge Current
Pulse Wi dth = 1.0 second
Pulse Wi dth = 1.0 microsecond
1.0
4.0
A
A
Tstg Storage Temperature Range -65 to +200 °C
TJ Operating Junction Tem perat ure 175 °C
Symbol
Parameter
Value
Units
PD Power Dissipation 500 mW
RθJA Thermal Resistance, Junction to Ambient 300 °C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
VR Breakdown Voltage IR = 5 µA 200 V
VF Forward Voltage IF = 100 m A 1.0 V
IR Reverse Current VR = 175 V
VR = 175 V, TA = 150°C 25
5 nA
µA
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Definition of Terms
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Advance Information
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No Identification Needed
Obsolete
This datasheet contains the design specifications for
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any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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ImpliedDisconnect
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