DHG 40 C 1200 HB
advanced
ns
Sonic Fast Recovery Diod e
Symbol Definition
R a t i n g s
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
typ. max.
I
FSM
I
R
A
V
135
I
FAV
A
V
F
2.69
R
thJC
0.90 K/W
V
R
=
1 2 3
min.
20
t = 10 ms
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
V
RRM
V1200
30T
VJ
C=
T
VJ
°C=mA3
Package:
Part number
V
R
=
T
VJ
C
I
F
=A
V
T
C
=85°C
rectangular, d = 0.5
P
tot
140 WT
C
°C=
T
VJ
150 °C-55
V
I
RRM
FAV
=
=1200
20
20
T
VJ
=45°C
DHG 40 C 1200 HB
V
A
1200
V1200
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
Conditions Unit
3.52
T
VJ
°C=25
C
J
tbd pF
j
unction capacitance V= V;600 T
125
V
F0
V1.60T
VJ
= 150°C
r
F
33.8 Ω
f = 1 MHz = °C25
m
V2.35T
VJ
C
I
F
=A
V
20 150
3.29
I
F
=A40
I
F
=A40
2x
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
19 A
T
VJ
C
reverse recovery time
Atbd
75
tbd
ns
(50 Hz), sine
t
rr
=75 ns
Housing:
High Performance Fast Recove
Low Loss and Soft Recovery
Common Cathode
TO-247
rIndustry standard outline
rEpoxy meets UL 94V-0
rRoHS compliant
RVJ
I
RM
max. reverse recovery current
I
F
=A;20
25
T= °C
VJ
-di
F
=A/µs750/dtt
rr
V
R
=V800
T
VJ
C25
T= °C
VJ
µA
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
0629
Data according to IEC 60747and per diode unless otherwise specified
DHG 40 C 1200 HB
advanced
I
RMS
A
per pin 50
R
thCH
K/W0.25
M
D
Nm1.2
mounting torque 0.8
T
stg
°C150
storage temperature -55
Weight g6
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
F
C
N120
mounting force with clip 20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
DHG 40 C 1200 HB 505138Tube 30
XXXXXX
YYWW
Logo
Marking on product
DateCode
Assembly Code
abcdef
Product Marking
D
H
G
40
C
1200
HB
Part number
Diode
Sonic Fast Recovery Diode
extreme fast
Common Cathode
TO-247AD (3)
=
=
=
DHG40C1200PB
DHG40C600HB
DHG40C600PB
TO-220
TO-247
TO-220
Similar Part Package
1)
1
)
Ma r king on Pr o d uct
DHG40C1200HB
1200
600
600
Voltage class
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
RMS
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
0629
Data according to IEC 60747and per diode unless otherwise specified
DHG 40 C 1200 HB
advanced
Symbol Inches Millimeters
min max min max
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
ØP 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
ØP1 - 0.291 - 7.39
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
0629
Data according to IEC 60747and per diode unless otherwise specified