
DHG 40 C 1200 HB
advanced
ns
Sonic Fast Recovery Diod e
Symbol Definition
R a t i n g s
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
typ. max.
I
FSM
I
R
A
V
135
I
FAV
A
V
F
2.69
R
thJC
0.90 K/W
V
R
=
1 2 3
min.
20
t = 10 ms
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
V
RRM
V1200
30T
VJ
V°C=
T
VJ
°C=mA3
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=85°C
rectangular, d = 0.5
P
tot
140 WT
C
°C=
T
VJ
150 °C-55
I
=
=1200
20
20
T
VJ
=45°C
DHG 40 C 1200 HB
1200
V1200
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
Conditions Unit
3.52
T
VJ
°C=25
C
J
tbd pF
unction capacitance V= V;600 T
125
V
F0
V1.60T
VJ
= 150°C
r
F
33.8 Ω
f = 1 MHz = °C25
m
V2.35T
VJ
=°C
I
F
=A
V
20 150
3.29
I
F
=A40
I
F
=A40
2x
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
19 A
T
VJ
=°C
reverse recovery time
Atbd
75
tbd
ns
(50 Hz), sine
t
=75 ns
● Housing:
High Performance Fast Recove
Low Loss and Soft Recovery
Common Cathode
TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
RVJ
I
RM
max. reverse recovery current
I
F
=A;20
25
T= °C
VJ
-di
F
=A/µs750/dtt
rr
V
R
=V800
T
VJ
=°C25
T= °C
VJ
µA
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
0629
Data according to IEC 60747and per diode unless otherwise specified