DHG 40 C 1200 HB advanced V RRM = 1200 V I FAV = 2x 20 A t rr = 75 ns Sonic Fast Recovery Diode High Performance Fast Recove Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DHG 40 C 1200 HB Backside: cathode Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: TO-247 Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant Ratings VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current t rr CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2007 IXYS all rights reserved typ. max. Unit 1200 V VR = 1200 V 30 A VR = 1200 V TVJ = 125 C 3 mA TVJ = 25 C 2.69 V 3.52 V IF = 20 A IF = 40 A IF = 20 A IF = 40 A rectangular, d = 0.5 for power loss calculation only R thJC min. TVJ = 25 C TVJ = 25 C TVJ = 150 C 2.35 V 3.29 V TC = 85C 20 A TVJ = 150C 1.60 V -55 33.8 m 0.90 K/W 150 C TC = 25 C 140 W t = 10 ms (50 Hz), sine TVJ = 45C 135 A TVJ = 25 C 19 A IF = TVJ = C tbd A TVJ = 25 C 75 ns TVJ = C tbd ns TVJ = 25 C tbd pF 20 A; VR = 800 V -di F /dt = 750 A/s VR = 600 V; f = 1 MHz Data according to IEC 60747and per diode unless otherwise specified 0629 DHG 40 C 1200 HB advanced Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 50 0.25 -55 Weight A K/W 150 C 6 MD mounting torque FC mounting force with clip 1) typ. 1) 0.8 20 g 1.2 120 Nm N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Logo Marking on product DateCode Assembly Code Ordering Standard D H G 40 C 1200 HB abcdef YYWW XXXXXX Part Name DHG 40 C 1200 HB Similar Part DHG40C1200PB DHG40C600HB DHG40C600PB IXYS reserves the right to change limits, conditions and dimensions. (c) 2007 IXYS all rights reserved Marking on Product DHG40C1200HB Package TO-220 TO-247 TO-220 Delivering Mode Tube = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) Base Qty Code Key 30 505138 Voltage class 1200 600 600 Data according to IEC 60747and per diode unless otherwise specified 0629 DHG 40 C 1200 HB advanced Outlines TO-247 Symbol A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 OP1 Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.291 IXYS reserves the right to change limits, conditions and dimensions. (c) 2007 IXYS all rights reserved Millimeters min max 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Data according to IEC 60747and per diode unless otherwise specified 0629