COMSET SEMICONDUCT ORS 1/2
BDX20
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
VCBO Collector to Base Voltage -60 V
VCEO #Collector-Emitter Voltage -140 V
VCEX Collector-Emitter Voltage VBE=1.5 V -160 V
VEBO Emitter-Base Voltage -7 V
ICCollector Current – Continuous -10 A
IBBase Current – Continuous -7 A
PTOT Total D evice Dissipation 117 Watts
TJJunction Temperature 200 °C
TSStorage Temperature -65 to
+200 °C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
RthJC Thermal Resistance, Junction to Case 1.5 °C/W
PNP SILICON TRANSISTORS EPITAXIAL BASE
LF Large Signal Power Amplification
High Current Fast Switching
Thermal Fatigue Inspection
COMSET SEMICONDUCT ORS 2/2
BDX20
EL ECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
VCEO(SUS) Collector-Emitter Sustaining
Voltage (*) IC=-200 mA, IB=0 -140 - - V
VCEX Collector-Emitter
Break do wn Voltag e (*) IC=-100 mA, VBE=1.5 V -160 - - V
VCE=-140 V, VBE=1.5 V - - -1.0
ICEX Collector Cutoff Current VCE=- 140 V, VBE=1.5 V, TCASE=150°C - - -10 mA
ICBO Collector-Base Cutoff
Current VCB=- 140 V, IE=0 - - -1.0 mA
IEBO Emitter-Base Cutoff Current VBE=-7.0 V, IC=0 - - -5.0 mA
IC=-3.0 A, VCE=-4.0 V 20 - 70
h21E Static Forward Current
Transfer Ratio (*) IC=10 A, VCE=-4.0 V - 10 - -
IC=-3.0 A, IB=-0.3 A - - - 1.0
VCE(SAT) Collector-Emitter Saturation
Voltage (*) IC=-10 A, IB=-2 A - - -5.0 V
IC=-3.0 Adc, VCE=-4.0 V - -1.7 -
VBE Base-Emitter Voltage (*) IC=-10 A, VCE=-4.0 V - -5.7 - V
fTTransition Frequency VCE=-10 V, IC=-1.0 Adc, f=1.0 MHz 4 - - MHz
In accordance with JEDEC Registration Data
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
MECHANICAL DATA CAS E TO-3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Pin 1 : Base
Pin 2 : Collector
Case : Emitter
