2N7002DW
Document number: DS30120 Rev. 14 - 2 1 of 4
www.diodes.com April 2012
© Diodes Incorporated
2N7002DW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) max ID max
TA = 25°C
60V 7.5Ω @ VGS = 5V 0.23A
Features and Benefits
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Totally Lead-Free & Fully RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2 and 3)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Motor control
• Power Management Functions
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
2N7002DW-7-F SOT363 3,000/Tape & Reel
2N7002DW-13-F SOT363 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017
Code J K L M N P R … Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View Top View
Internal Schematic
S
1
D
1
D
2
S
2
G
1
G
2
K72 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
K72
K72
YM
YM
2N7002DW
Document number: DS30120 Rev. 14 - 2 2 of 4
www.diodes.com April 2012
© Diodes Incorporated
2N7002DW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS ≤ 1.0MΩ V
DGR 60 V
Gate-Source Voltage Continuous VGSS ±20 V
Pulsed VGSS ±40 V
Continuous Drain Current (Note 6) VGS = 5V Steady
State
TA = 25°C
TA = 70°C
TA = 100°C ID 0.23
0.18
0.14 A
Maximum Continuous Body Diode Forward Current (Note 6) IS 0.53 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 0.8 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) TA = 25°C PD 0.31 W
TA = 70°C 0.2
TA = 100°C 0.12
Thermal Resistance, Junction to Ambient (Note 5) Steady state R
θ
JA 410 °C/W
Total Power Dissipation (Note 6) TA = 25°C PD 0.4 W
TA = 70°C 0.25
TA = 100°C 0.15
Thermal Resistance, Junction to Ambient (Note 6) Steady state R
θ
JA 318 °C/W
Thermal Resistance, Junction to Case (Note 6) Steady state R
θ
JC 135 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C IDSS ⎯ ⎯ 1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
1.0 ⎯ 2.0 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance @ TJ = 25°C
@ TJ = 125°C RDS (ON) ⎯ 3.2
4.4 7.5
13.5 Ω VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current ID
(
ON
)
0.5 1.0 ⎯ A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ⎯ ⎯ mS VDS =10V, ID = 0.2A
Diode Forward Voltage VSD ⎯ 0.78 1.5 V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss ⎯ 22 50 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ⎯ 11 25 pF
Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time tD
(
on
)
⎯ 7.0 20
ns VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V,
RGEN = 25Ω
Turn-Off Delay Time tD(off) ⎯ 11.0 20
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2N7002DW
Document number: DS30120 Rev. 14 - 2 3 of 4
www.diodes.com April 2012
© Diodes Incorporated
2N7002DW
0
0.2
0.4
0.6
0.8
1.0
012345
V , DRAIN-SOURCE VOL TAGE (V)
Fig. 1 On-Region Characteristics
DS
I, D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
D
0
1
2
3
4
5
00.2
R
,
N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN CURRENT (A)
Fig . 2 On-R esistanc e vs. Drai n Cu rre nt
D
6
7
0.4 0.6 0.8 1.0
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45 70 95 120 145
R
,
N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
T, JUNCTION TEMPERATURE ( C)
Fig . 3 On-R esistanc e vs. Junction Temp eratur e
j
°
0
V , GA TE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
0 2 4 6 81012141618
R, NORMALIZED
DRAI N-SOURCE ON-RESISTANCE
DS(ON)
Package Outline Dimensions
SOT363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
α 0° 8°
All Dimensions in mm
A
M
JL
D
B C
H
K
F
2N7002DW
Document number: DS30120 Rev. 14 - 2 4 of 4
www.diodes.com April 2012
© Diodes Incorporated
2N7002DW
Suggested Pad Layout
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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Copyright © 2012, Diodes Incorporated
www.diodes.com
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
X
Z
Y
C1
C2
C2
G
