BTF50060-1TEA
Smart High-Side Power Switch, One Channel
High PWM Frequencies
Datasheet, Rev. 1.0, June 2010
Automotive
Datasheet 2 Rev. 1.0, 2010-06-24
BTF50060-1TEA
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.3 Definition of Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.2 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1 Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1.1 Switching a Resisitve Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1.2 Switching an Inductive Load - Infineon® SMART CLAMPING . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.1.3 Switching a Capacitive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.1.4 Inverse Load Current Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3.1 Protection by Over Current Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3.2 Protection by Over Temperature Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.3.3 Infineon® INTELLIGENT LATCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.3.4 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.3.5 Protection during Loss of Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.3.6 Protection during Loss of Load or Loss of VS Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.3.7 Protection during ESD or Over Voltage Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4 Diagnosis Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
5.4.1 Sense Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
5.4.2 Enhancing Accuracy of the Sense Output by End of Line Calibration . . . . . . . . . . . . . . . . . . . . . . . 22
5.4.3 Short-to-Battery detection / Open Load Detection in OFF state . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.5 Undervoltage Shutdown & Restart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6 Electrical Characteristics BTF50060-1TEA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.1 Electrical Characteristics Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.2 Parameter dependencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
6.2.1 Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
6.2.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
6.2.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
6.2.4 Diagnosis Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
7 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
7.1 Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
8 Package Outlines and Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
PG-TO252-5-311
Type Package Marking
BTF50060-1TEA PG-TO252-5-311 F50060A
Datasheet 3 Rev. 1.0, 2010-06-24
Smart High-Side Power Switch, One Channel
High PWM Frequencies
BTF50060-1TEA
1Overview
Application
• Driving all types of resistive, inductive and capacitive loads
• Most suitable for driving loads with PWM frequency from 0Hz (DC
operation) up to 33kHz and above
• Drives valves, coils, and motors, with inrush currents up to 60 A
Features
• Optimized for PWM frequencies of approx. 25 kHz
• 3.3V and 5V compatible logic inputs
• Advanced analog load current sense signal
• Designed for easy current sense calibration
• Embedded diagnosis features (e.g. open load in ON and OFF state)
• Embedded protection functions (e.g. over current shutdown, over temperature shutdown)
•Infineon
® INTELLIGENT LATCH
•Infineon
® SMART CLAMPING
• Green Product (RoHS compliant)
• AEC Qualified
Description
Embedded in a PG-TO252-5-311 package, the BTF50060-1TEA is a 6mΩ single channel Smart High-Side Power
Switch. It is based on Smart power chip on chip technology with a P-channel vertical power MOSFET, providing
protective and diagnostic functions. It is specially designed to drive loads in the harsh automotive environment.
Table 1 Product Summary
Parameter Symbol Values
Range of typical PWM frequencies fPWM 0 Hz ... 33 kHz
Maximum On-state Resistance at Tj = 150 °CRDS(ON)_150 12 mΩ
Nominal Supply Voltage Range for Operation VS(NOM) 6 V … 19 V
Nominal Load Current (DC operation) IL(NOM) 16.5 A
Typical Stand-by Current at Tj = 25 °CIS(OFF) 5 µA
Minimum short circuit current shutdown threshold IL(SC) 60 A
Maximum reverse battery voltage -VS(REV) 16 V
Datasheet 4 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Block Diagram
Embedded Protection Functions
•Infineon
® INTELLIGENT LATCH - resettable latch resulting from protective switch OFF
• Over current protection by short-circuit shutdown
• Overload protection by over-temperature shutdown
•Infineon
® SMART CLAMPING
Embedded Diagnosis Functions
• Advanced analog load current sense signal with defined positive offset current; enabling load diagnosis like
Open Load in ON state, overload
• Providing defined fault signal
• Open Load detection in OFF state
• Short-to-battery detection
2 Block Diagram
Figure 1 Block Diagram of BTF50060-1TEA
For a Diagram of Diagnosis & Protection block, please see Figure 15.
ESD + over voltage protection
BlockDiagram.emf
Vs
OUT
IN
GND
IS
Diagnosis
&
Protection
Sense output
Input circuit
RIN
Temp
Gate
driver
Smart
Clamping
A
Datasheet 5 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Pin Configuration
3 Pin Configuration
3.1 Pin Assignment
Figure 2 Pin Configuration
3.2 Pin Definitions and Functions
3.3 Definition of Terms
Figure 3 shows all terms used for currents and voltages in this data sheet, with associated convention for positive
values.
Figure 3 Definition of currents and voltages
Pin Symbol Function
1GND Ground; Ground connection for control chip.
2IN Input; Digital 3.3 V and 5 V compatible logic input; activates power switch if set to
HIGH level; Includes internal pull-down resistor RIN.
Tab; 31)
1) Tab and pin 3 are internally connected. Pin 3 is cut.
OUT Output; Protected high side power output
4IS Sense; Provides analog sense current signal and defined fault signal.
5Vs Supply Voltage; Positive supply voltage for Logic and Power Stage2)
2) PCB traces have to be designed to withstand maximum current occuring in the application.
PinConfiguration .emf
1
2
3
4
5
GND
(OUT)
IN
IS
VS
OUT (TAB)
Terms.emf
VIN
OUT
VS
VOUT
IS
IN
VS
IIN
IGND
GND IS
IIS
IL
VSIS
VIS
VSD
Datasheet 6 Rev. 1.0, 2010-06-24
BTF50060-1TEA
General Product Characteristics
4 General Product Characteristics
4.1 Absolute Maximum Ratings
Table 2 Absolute Maximum Ratings 1)
Tj = -40°C to 150°C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter Symbol Values Unit Note /
Test Condition
Number
Min. T
y
p
.Max.
Supply voltages
Supply Voltage VS-0.3 28 V – P_4.1
Reverse Polarity Voltage on
pin GND, IS
|-VS(REV)|0 16V
2), 3) P_4.2
Supply voltage for short
circuit protection
VBAT(SC)
4) 028VRECU =20mΩ,
RCable =6mΩ/m,
LCable =1µH/m,
l=0or5m,
see
Chapter 5.3.1
P_4.3
Supply voltage for load dump
protection
VS(LD) –45VRI=2Ω 5) ,
RL=1.0Ω,
td=400ms
P_4.4
Short Circuit Capability
Short circuit cycle capability nRSC1 –1 E6
(Grade A)
–4) P_4.21
IN + IS + GND pin
Voltage at IN pin VIN -0.3 6 V – P_4.5
Current through IN pin IIN -2 2 mA t < 2min P_4.6
Voltage at IS pin VIS -0.3 VSV – P_4.7
Current through IS pin IIS -2 10 mA – P_4.8
Current through GND pin IGND -2 10 mA – P_4.9
Power stage
Load current IL-IL(SC) IL(SC) A – P_4.10
Maximum energy dissipation
for switching OFF an
inductive load
- single pulse
EAS –280mJVS= 13.5V
IL(0) =20A
Tj(0) =150°C
See Figure 4 and
Chapter 5.1.2
P_4.11
Maximum energy dissipation
for switching OFF an
inductive load
- repetitive pulse
EAR –84mJVS= 13.5V
IL(0) =20A
Tj(0) =105°C
See Figure 4 and
Chapter 5.1.2
P_4.13
Temperatures
Junction Temperature Tj-40 150 °C – P_4.14
Datasheet 7 Rev. 1.0, 2010-06-24
BTF50060-1TEA
General Product Characteristics
Figure 4 Maximum energy dissipation for switching OFF an inductive load EA vs. load current
Dynamic temperature
increase while switching
∆Tj– 60 K – P_4.15
Storage Temperature Tstg -55 150 °C – P_4.16
ESD Susceptibility
ESD Resistivity HBM
all Pins to GND
VESD1 -2 2 kV HBM6) P_4.17
ESD Resistivity HBM
VSvs. GND, VSvs. OUT,
OUT vs. GND
VESD2 -4 4 kV HBM6) P_4.18
ESD Resistivity CDM
all pins to GND
VESD3 -500 500 V CDM7) P_4.19
ESD Resistivity CDM
corner pins
VESD4 -750 750 V CDM7) P_4.20
1) Not subject to production test, specified by design.
2) In case of reverse polarity voltage on pin IN, IIN needs to be limited (see P_4.6) by external resistor RINPUT, see Figure 45.
3) In case of reverse polarity voltage, current through the OUT pin needs to be limited by external circuitry to prevent over
heating (see P_4.14). Power dissipation during reverse polarity voltage can be calculated by Equation (3). Please note,
build-in protection functions are not available during reverse polarity condition.
4) In accordance to AEC Q100-012 and AEC Q101-006. Test aborted after 1 E6 cycles.
5) VS(LD) is set up without the DUT connected to the generator per ISO 7637-1.
6) ESD susceptibility, HBM according to EIA/JESD 22-A114B
7) ESD susceptibility, Charged Device Model “CDM” EIA/JESD22-C101 or ESDA STM5.3.1
Table 2 Absolute Maximum Ratings (cont’d)1)
Tj = -40°C to 150°C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter Symbol Values Unit Note /
Test Condition
Number
Min. T
y
p
.Max.
1
10
100
1000
10 100
IL(0) [A]
EA [mJ]
E_AR (Tj(0) = 105°C)
E_AS (Tj(0) = 150°C)
Datasheet 8 Rev. 1.0, 2010-06-24
BTF50060-1TEA
General Product Characteristics
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
Datasheet 9 Rev. 1.0, 2010-06-24
BTF50060-1TEA
General Product Characteristics
4.2 Functional Range
Figure 5 Overview of functional ranges
Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the Electrical Characteristics table.
Table 3 Functional Range
Parameter Symbol Values Unit Note /
Test Condition
Number
Min. T
y
p
.Max.
Nominal Supply Voltage
Range for Operation
VS(NOM) 6 19 V – P_4.23
Extended Supply Voltage
Range for Operation
VS(EXT) VS(UV)ON
1)
1) see Chapter 5.5, Undervoltage turn ON voltage and Undervoltage turn OFF voltage
28 V 2)
2) In extended supply voltage range, the device is functional but electrical parameters are not specified.
P_4.24
Extended Supply Voltage
Range for short dynamic
undervoltage swings
VS(DYN) VS(UV)OFF
1) VS(UV)ON
1) V2)3)
3) Operation only if supply voltage was in range of VS(EXT) before undervoltage swing. Otherwise, device will stay OFF.
P_4.25
Junction Temperature Tj-40 150 °C – P_4.26
V
S
V
S(UV)OFF
V
S(UV)ON
6V 19V
28V
V
S(NOM)
V
S(EXT)
V
S(DYN)
FunctionalRange.emf
13.5V
Datasheet 10 Rev. 1.0, 2010-06-24
BTF50060-1TEA
General Product Characteristics
4.3 Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go
to www.jedec.org.
Figure 6 and Figure 7 are showing the typical thermal impedance of BTF50060-1TEA mounted according to
Jedec JESD51-2,-5,-7 at natural convection on FR4 1s and 2s2p board. The product (chip + package) was
simulated on a 76,4 x 114,3 x 1,5 mm board with 2 inner copper layers (2x 70µm Cu, 2 x 35µm Cu). Where
applicable, a thermal via array under the exposed pad contacted the first inner copper layer. The PCB layer
structure is shown in Figure 8. The PCB layout is shown in Figure 9.
Table 4 Thermal Resistance
Parameter Symbol Values Unit Note /
Test Condition
Number
Min. Typ. Max.
Thermal Resistance -
Junction to Case
RthJC
1)
1) Not subject to production test, specified by design.
– 1 1.1 K/W – P_4.27
Thermal Resistance -
Junction to Ambient - 2s2p
RthJA_2s2p
1) –22–K/W
2)
2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(Chip+Package) was simulated on a 76.2 × 114.3 × 1.5 mm board with 2 inner copper layers (2 × 70 mm Cu, 2 × 35 mm
Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer.
P_4.29
Figure 6 Typical Transient Thermal Impedance
Zth(JA) =f(tP) for different cooling areas
Figure 7 Typical Transient Thermal Impedance
Zth(JA) =f(tP) for PWM operation with
duty cycles D = t/tperiod on a 2s2p PCB
Datasheet 11 Rev. 1.0, 2010-06-24
BTF50060-1TEA
General Product Characteristics
Figure 8 Cross section of 1s and 2s2p PCB used for ZthJA simulation
Figure 9 Front view of PCB layout used for ZthJA simulation
1.5mm
70µm
35µm
0.3mm
PCB 2s2p.emf
2s2p PCB
1.5mm
70µm
PCB 1s.emf
1s PCB
600mm²
300mm²
min
PCB front.emf
Datasheet 12 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Functional Description
5 Functional Description
5.1 Power Stage
The power stage is built by a P-channel vertical power MOSFET (DMOS). The ON-state resistance RDS(ON)
depends on the supply voltage VS as well as the junction temperature Tj. Figure 26 shows the dependencies for
the typical ON-state resistance. The behavior in reverse polarity is described in Chapter 5.3.4. A HIGH signal at
the input pin (see Chapter 5.2) causes the power DMOS to switch ON. A LOW signal at the input pin causes the
power DMOS to switch OFF.
5.1.1 Switching a Resisitve Load
Defined slew rates for turn ON and OFF as well as edge shaping support PWM’ing of the load while achieving
lowest EMC emission at minimum switching losses. Figure 10 shows the typical timing when switching a resistive
load. Please note: if the devices logic is inactive, e.g. because the IN signal was LOW for t > tRESET, the logic of
the device needs a wake-up time of twake for turning the output ON in addition to the turn ON time tON. See also
Figure 11.
Figure 10 Switching a resistive load
SwitchingResistiveLoad_F .emf
V
OUT
t
V
IN
10% V
S
30% V
S
70% V
S
90% V
S
t
ON
t
OFF
(dV/dt)
ON
(dV/dt)
OFF
t
r
t
f
V
IN(H),min
V
IN(L),max
t
Datasheet 13 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Functional Description
Figure 11 Wake up timing
5.1.2 Switching an Inductive Load - Infineon® SMART CLAMPING
When switching OFF inductive loads with no path for load current freewheeling available, the output voltage VOUT
drops below ground potential due to the involved inductance ( -diL/dt = -vL/L ; -VOUT ≅ -VL ). To prevent the
destruction of the device due to high voltages, there is a voltage clamp mechanism implemented that keeps the
negative output voltage at a certain level (-VOUT=VS-VSD(CL)). Please refer to Figure 1 and Figure 12 for details.
Figure 12 Switching an inductance
Nevertheless, the energy capability of the device is limited because the energy is converted into heat. That’s why
the maximum allowed load inductance is limited as well. Please see Figure 4 for limitations of energy and load
inductance.
For calculationg the demagnization energy, Equation (1) may be used:
(1)
The equation can be simplified under the assumption of RL = 0 Ω to:
(2)
The BTF50060-1TEA provides Infineon® SMART CLAMPING functionality. To optimize the energy capability for
single and parallel operation, the clamp voltage VSD(CL) increases over the junction temperature Tj and load current
IL. Figure 30 shows the dependency from Tj for the typical VSD(CL). Please refer also to Figure 15.
t
t
wake-up.emf
V
IN
V
OUT
t
I
IS
t
wake
+t
sIS(ON)
I
IS(OFFSET)
t
RESET
t
wake
+t
ON
t > t
RESET
t < t
RESET
t
ON
t
sIS(ON)
V
OUT
SwitchingInductance.e mf
t
I
L
t
V
S
ON OFF
V
SD(CL)
EAVSDCL()
L
RL
------
×VSVSDCL()
–
RL
-------------------------------- 1RLIL
×
VSD CL()
VS
–
----------------------------------
+
ln IL
+××=
E
A
1
2
---LI
L
2VSDCL()
VSDCL()VS
–
--------------------------------
×××=
Datasheet 14 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Functional Description
5.1.3 Switching a Capacitive Load
A capacitive load’s dominant characteristic is it’s inrush current. The BTF50060-1TEA can support inrush currents
up to IL(SC). If the inrush current reaches IL(SC), the device may detect a short circuit condition and switches OFF.
For a description of the short circuit protection mechanism, please refer to Chapter 5.3.1.
5.1.4 Inverse Load Current Operation
In case of a negative load current, e.g. caused by load operating as a generator, the device can not block a current
flowing through the intrinsic body diode. See Figure 13. The power stage of the device can be switched ON or
stays ON as long as VIN = HIGH, reaching the same RDS(ON) as for positive load currents, if no fault condition is
detected. In case of fault condition, the logic of the device will switch OFF the power stage and supply a fault signal
IIS(fault). Since the device can not block a negative load current (even under fault conditions), it can not protect itself
from overload condition. In the application, overload conditions, e.g. over temperature, must not occur during
inverse load current operation.
Figure 13 Inverse load current operation
5.2 Input Circuit
The input circuitry is compatible with 3.3 and 5V micro controllers. If VIN is set to VIN = VIN(H) (VIN = HIGH), the
device will turn ON. See Figure 10 for the timings. If VIN is set to VIN = VIN(L) (VIN = LOW), the power stage of the
device will be turned OFF. The input circuitry has a hysteresis ∆VIN. The input circuitry is compatible with PWM
applications. Figure 14 shows the electrical equivalent input circuitry. The logic of the BTF50060-1TEA stays
active for a delay time tRESET after the switch OFF signal.
Figure 14 Input pin circuitry
Applying an input voltage of VIN > 20V (absolute maximum ratings exceeded!) may force the BTF50060-1TEA to
deactivate parts of the logic circuitry. This includes the undervoltage shutdown, the undervoltage restart delay, and
the analog sense function. In this case, also the short circuit shutdown threshold IL(SC) is set to typically 50A, and
LOAD
GND
logic
Invers.emf
V
S
OUT
G
-IL(inv)
IN
GND
RIN
InputCircuitry.emf
Datasheet 15 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Functional Description
the latch reset time tRESET is reduced to typically 200µs. To reset this behavior, set input voltage to VIN = LOW for
t>300µs.
Datasheet 16 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Functional Description
5.3 Protection Functions
The BTF50060-1TEA provides embedded protective functions. Integrated protection functions are designed to
prevent the destruction of the IC from fault conditions described in the data sheet. Fault conditions are considered
as “outside” normal operating range. Protection functions are designed for neither continuous nor repetitive
operation.
In case of overload, high inrush currents, or short circuit to ground, the BTF50060-1TEA offers several protection
mechanisms. Figure 15 describes the functionality of the diagnosis and protection block.
Figure 15 Diagram of Diagnosis & Protection block
5.3.1 Protection by Over Current Shutdown
The internal logic permanently monitors the load current IL. In the event of a load current exceeding the short circuit
shutdown threshold (IL>IL(SC)), the output will switch OFF with a latching behavior. During an over current
shutdown, an overshooting IL(SC)peak may occur, depending on the short circuit impedances. For the case the
device is in ON state while short circuit appears, the typical overshooting IL(SC)peak as a function of the steepness
of the short circuit current dISC/dt, see Chapter 6.2.3.
For a detailed description of the latching behavior, please see Chapter 5.3.3.
At lower supply voltages the current tripping level IL(SC) will decrease depending on the supply voltage. At VS =
4.7V, the current tripping level will be reduced to IL(SC)LV. Please refer to Figure 32 for typical current tripping level
IL(SC) as a function of the supply voltage VS.
Diagnosis & Protection
DiagnosisProtection.emf
Temp
Input
circuit
Sense
output I
IS(fault)
0
1
≥1
A
Gate
driver
Undervoltage protection
V
S(UV)
delay = t
d(UV)
no delay
&
INTELLIGENT LATCH
T
jt
I
L(SC)
≥1
QS
QR
Open Load at OFF
V
OUT(OL)
ENABLE
Vs
OUT
1
delay = t
RESET
no delay
timer reset
No FAULT
IN
No Undervoltage
R
OUT(GND)
Datasheet 17 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Functional Description
5.3.2 Protection by Over Temperature Shutdown
The internal logic permanently monitors the junction temperature of the output stage. In the event of an over
temperature (Tj > Tjt) the output will immediately switch OFF with a latching behavior, see Chapter 5.3.3 for
details.
5.3.3 Infineon® INTELLIGENT LATCH
The BTF50060-1TEA provides Infineon® INTELLIGENT LATCH to avoid permanent resetting of a protective,
latched switch OFF caused by over current shutdown or over temperature shutdown) in PWM applications. To
reset a latched protective switch OFF the fault has to be acknowledged by commanding the input LOW for a
minimum duration of treset. See Figure 16 for details.
Figure 16 Infineon® INTELLIGENT LATCH - fault acknowledge and latch reset
5.3.4 Reverse Polarity Protection
Reverse polarity condition is the mix-up of the power supply connections of the entire application. This means,
application GND connector is connected to positive supply voltage, while Vs pin is connected to negative supply
voltage or ground potential. See Figure 17 and Figure 45.
Figure 17 Reverse polarity condition
t
INTELLIGENTLATCH.emf
V
IN
t
I
IS
I
IS(fault)
t
over temperature /
short circuit
t
V
OUT
t
RESET
t
RESET
I
IS(OFFSET)
latch reset latch reset
LOAD
GND
Revers.emf
V
S
OUT
-VS(rev) -IL
R
IS
R
SENSE
R
INPUT
-IIN
logic
Datasheet 18 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Functional Description
Under reverse polarity condition, the output stage can not block a current flow. It will conduct a load current via
the intrinsic body diode. The current through the output stage has to be limited either by the load itself or by
external circuitry, to avoid over heating of the power stage. Power losses in the power stage during reverse polarity
condition can be calculated by Equation (3):
(3)
Additionally, the current into the logic pins has to be limited to the maximum current described in Chapter 4.1 with
an external resistors. Figure 46 shows a typical application. Resistors RINPUT and RSENSE are used to limit the
current in the logic of the device and in the ESD protection stage. The recommended value for RINPUT = RSENSE =
10kΩ. As long as |-VS(rev)| < 16V, the current through the GND pin of the device is blocked by an internal diode.
5.3.5 Protection during Loss of Ground
In case of loss of the module ground or device ground connection (GND pin) the device protects itself by
automatically turning OFF (when it was previously ON) or remains OFF (even if the load remains connected to
ground), regardless if the input is driven HIGH or LOW. In case GND recovers the device may need a reset via
the IN pin to return to normal operation.
5.3.6 Protection during Loss of Load or Loss of VS Condition
In case of loss of load with charged primary inductances the maximum supply voltage has to be limited. It is
recommended to use a Z-diode, a varistor (VZa < 40V) or VS clamping power switches with connected loads in
parallel.
In case of loss of a charged inductive load, disturbances on pin OUT may require a reset on IN pin for the device
to regain normal operation.
In case of loss of VS connection with charged inductive loads, a current path with load current capability has to be
provided, to demagnetize the charged inductances. It is recommended to use a diode, a Z-diode or a varistor
(VZb <16V, VZL +VD<16V).
For higher clamp voltages currents through all pins have to be limited according to the maximum ratings. Please
see Figure 18 and Figure 19 for details.
Figure 18 Loss of VS
Prev ILrev()
–()VSD rev()
–()×=
LossOfVs.emf
V
D
V
ZL
LOAD
V
Zb
LOAD
V
Za
GND
logic
V
S
OUT
Sm ar t
Clamping
GND
logic
V
S
OUT
Sm ar t
Clamping
Datasheet 19 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Functional Description
Figure 19 Loss of load
5.3.7 Protection during ESD or Over Voltage Condition
All logic pins have ESD protection. A dedicated clamp mechanism protects the logic IC against transient over
voltages. See Figure 20 for details.
Figure 20 Over voltage protection
In the case (VS > max VS(SC))&(VS < VSD(CL)), the output transistor is still operational and follows the input.
Parameters are no longer warranted and lifetime is reduced compared to normal mode. This specially impacts the
short circuit robustness, as well as the maximum energy EAS the device can handle.
The BTF50060-1TEA provides Infineon® SMART CLAMPING functionality, which suppresses non nominal over
voltages by actively clamping the over voltage across the power stage and the load. This is achieved by controlling
the clamp voltage VSD(CL) depending on the junction temperature Tj and the load current IL. See Figure 15 for
details. Please refer also to Chapter 5.1.2.
V
Zb
LOAD
V
Za
LossOfLoad.emf
GND
logic
V
S
OUT
Sm ar t
Clamping
ESD protection
IS
OverVoltageProtection.emf
V
S
Over voltage
protection
V
Z(IC)
IN
OUT
GND
Datasheet 20 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Functional Description
5.4 Diagnosis Functions
For diagnosis purpose, the BTF50060-1TEA provides an enhanced analog sense signal at the pin IS. For an
overview of the diagnosis functions, you may have a look at Figure 15 “Diagram of Diagnosis & Protection
block”.
5.4.1 Sense Output
The current sense output is a current source driving a signal IIS proportional to the load current (see Equation (5))
as long as no “hard” failure mode occurs (short circuit to GND / over temperature) and VSIS = VS - VIS > 3V. It is
activated and deactivated by the input signal. Usually, in the application a pull-down resistor RIS is connected
between the current sense pin IS and GND pin. A typical value is RIS =1.0kΩ. Figure 46 shows a simplified
application setup.
Table 5 is giving a quick reference for the logic / analog state of the IS pin during device operation.
In case a short circuit or an over temperature condition is detected, the sense output is supplying a fault signal
IIS(fault). The fault signal is reset by an input signal being LOW for t > tRESET. As long as an open load, short-to-VS
or inverse operation is detected while the device is in OFF state, the sense output also supplies the fault signal
IIS(fault). The timings and logic of the IS pin are described in Figure 21. During output turning ON or OFF, the sense
signal is invalid. Please note: if the devices logic is inactive, e.g. because the IN signal was LOW for t > tRESET, the
logic of the device needs a wake-up time of twake for activating the sense output in addition to the current sense
settling time for turn ON tsIS(ON). See also Figure 11.
Table 5 Truth Table for Sense Signal
Operation mode Input level Output level Sense output
Normal operation HIGH 1)
1) HIGH: VIN =VIN(H)
VOUT =VS-RDS(ON) *ILIIS =(IL/kIS)+IIS(OFFSET)
LOW 2) for t < tRESET
2) LOW: VIN =VIN(L)
VOUT ~GND
(VOUT <VOUT(OLL))
IIS =IIS(OFFSET)
LOW for t > tRESET Z3) (IIS =IIS(LL))
3) Z: High impedance
Inverse operation HIGH VOUT >VSIIS ≤IIS(OFFSET)
LOW for t < tRESET IIS =IIS(OFFSET)
LOW for t > tRESET IIS =IIS(FAULT)
After short circuit to GND or
over temperature detection
HIGH or LOW for
t<tRESET
VOUT ~GND IIS =IIS(FAULT)
LOW for t > tRESET Z (IIS =IIS(LL))
Short circuit to VSHIGH VOUT =VSIIS ≤IIS(OFFSET)
LOW for t < tRESET IIS =IIS(OFFSET)
LOW for t > tRESET IIS =IIS(FAULT)
Open load HIGH VOUT =VSIIS ≤IIS(OFFSET)
LOW for t < tRESET VOUT >VOUT(OLH)
4)
4) Can be achieved e.g. with external pull up resistor ROL, see Figure 46.
IIS =IIS(OFFSET)
LOW for t > tRESET IIS =IIS(FAULT)
Datasheet 21 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Functional Description
Figure 21 Sense output timing
Figure 22 shows the current sense as a function of the load current in the power DMOS. The curves represent
the minimum and maximum values for the sense current, as well as the ideal sense current, assuming an ideal kIS
factor value as well as an ideal IIS(OFFSET).
Figure 22 Sense current as a function of the load current (VSIS > 3V)
The sense current can be calculated out of the load current by the following Equation (4):
(4)
Or, vice versa, the load current can be calculated out of the sense current by following Equation (5):
(5)
t
t
CurrentSenseTiming.emf
VIN
IL
t
IIS
90% (IIS static
-IIS(offset))
tsIS(ON) tsIS(OFF)
10% (IIS static
-IIS(offset))
tsIS (LC) tsIS (LC)
tRESET
IIS(OFFSET)
0
2
4
6
8
10
0 20406080100
IL [A]
IIS [mA]
max IIS(fault)
typ IIS(fault)
min IIS(fault)
max IL(SC)
max IIS
typ I IS
min I IS
min IL(SC)
typ I L(SC)
0
0.5
1
1.5
2
0 5 10 15
IL [A]
IIS [mA]
min I IS(OFFSET)
typ I IS(OFFSET)
max I IS(OFFSET)
max I IS
typ I IS
min I IS
IIS
1
k
---
IS
IL
×IIS OFFS
E
(
+=
I
LkIS IIS IIS OFFSET()
–()×=
Datasheet 22 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Functional Description
For definition of kIS, the following Equation (6) is used:
(6)
IL1 and IL2 are two different load currents, IIS(IL1) and IIS(IL2) are the corresponding sense currents.
5.4.2 Enhancing Accuracy of the Sense Output by End of Line Calibration
For some applications it may be necessary to measure the load current with very high accuracy. To increase the
device accuracy, different methods can be used, e.g. single point calibration or dual point calibration.
The variance of the sense current at a certain load current depends on the variance of the factor kIS as well as on
the variance of the offset current IIS(OFFSET). The temperature variance of the factor kIS over the temperature range
is described with the parameter ∆kIS,Temp.
(7)
The variance of the sense current offset over the temperature range is defined as shown in Equation (8):
(8)
5.4.3 Short-to-Battery detection / Open Load Detection in OFF state
The BTF50060-1TEA provides open load diagnosis in OFF state. This is achieved by monitoring the OUT voltage.
The open load at OFF diagnosis is activated if VIN = LOW for t > tRESET. An open load or short-to-battery is detected
if VOUT > VOUT(OLH). To provoke this condition during Open Load, it may be necessary to use an external pull up
resistor ROL (see Figure 46). In case of detecting a shorted load to battery, open load, or inverse operation in OFF
state, the pin IS provides a defined fault current IIS(fault). If VOUT drops below VOUT(OLL), or VIN is set to HIGH, the
fault signal is removed. Figure 23 shows the behavior of the open load at OFF diagnosis. Figure 43 and
Figure 44 provide the typical behavior of VOUT(OLH) and VOUT(OLL) as a function of the supply voltage and junction
temperature. The device internally connects OUT with GND pin with an effective resistor ROUT(GND). In case the
application provides high leakage current outside of the BTF50060-1TEA between Vs and OUT, it may be
necessary to use an external resistor RL_OL to disable open load detection. Figure 46 gives an example of external
circuitry for enabling / disabling open load detection in OFF state.
kIS
IL1 IL2
–
IIS IL1
()IIS IL2
()–
--------------------------------------------
=
∆kIS Temp,max kIS 40°C–()kIS 25°C()–kIS 40°C–()kIS 25°C()–;[]=
∆IIS OFFSET()
max IIS OFFSET()
40°C–()IIS OFFSET()
25°C()–IIS OFFSET()
40°C–()IIS OFFSET()
25°C()–;[ ]=
Datasheet 23 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Functional Description
Figure 23 Open load detection in OFF state
5.5 Undervoltage Shutdown & Restart
The BTF50060-1TEA switches OFF whenever VS drops below VS(UV)OFF. The device restarts automatically after
the supply voltage increases to a sufficient level (VS>VS(UV)ON) and a delay time of tdelay(UV), if the input pin IN is
HIGH. Please see Figure 24 for details. The fault signal is reset if VS is below VS(UV) for more than typ. 70µs.
Figure 24 Undervoltage shutdown and restart
OpenLoad_at_OFF.emf
V
OUT
t
I
IS
∆V
OUT(OL)
V
OUT(OLL )
V
OUT(OLH )
t
I
IS(LL)
I
IS(FAULT)
Undervoltage.emf
V
S
t
V
OUT
t
delay(UV)
∆V
S(UV)
ON
V
S(UV)OFF
V
S(UV)ON
Z
t
t
V
IN
HIGH
Datasheet 24 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Electrical Characteristics BTF50060-1TEA
6 Electrical Characteristics BTF50060-1TEA
6.1 Electrical Characteristics Table
Table 6 Electrical Characteristics: BTF50060-1TEA
VS = 6V to 19V, Tj = -40°C to 150°C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter Symbol Values Unit Note /
Test Condition
Number
Min. Typ. Max.
Operating currents
Standby current for whole
device with load
Tj=25°C
IS(OFF)_25
1) –58µAVIN = LOW for
t>tRESET,
VS= 13.5V,
Tj=25°C
VOUT <VOUT(OLL)
P_6.1
Standby current for whole
device with load
Tj=85°C
IS(OFF)_85
1) –58µAVIN = LOW for
t>tRESET,
VS= 13.5V,
Tj=85°C
VOUT <VOUT(OLL)
P_6.2
Standby current for whole
device with load
Tj=150°C
IS(OFF)_150 –2060µAVIN = LOW for
t>tRESET,
Tj=150°C
VOUT <VOUT(OLL)
P_6.3
Ground current during ON IGND(ON) –35mAVIN =HIGH,
t>tON
P_6.4
Supply current during open
load detection in OFF state
IS(OL)
1) –1215mAVIN = LOW for
t>tRESET,
VOUT >VOUT(OLH)
P_6.5
Power stage
On-State Resistance RDS(ON)_25
1) –6.8–mΩVIN =HIGH,
Tj=25 °C,
VS= 13.5V,
IL= +/-13.5A
P_6.6
On-State Resistance RDS(ON)_150 –1012mΩVIN =HIGH,
Tj=150 °C,
VS= 13.5V,
IL= +/-13.5A
P_6.7
On-State Resistance RDS(8V)_25
1) –8–mΩVIN =HIGH,
Tj=25 °C,
VS=8V,
IL= +/-13.5A
P_6.8
On-State Resistance RDS(8V)_150
1) –11.515mΩVIN =HIGH,
Tj=150 °C,
VS=8V,
IL= +/-13.5A
P_6.9
Datasheet 25 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Electrical Characteristics BTF50060-1TEA
On-State Resistance at low
supply voltage
RDS(UV)_25
1) –10.5–mΩVIN =HIGH,
Tj=25 °C,
VS=4.7V,
IL= +/-13.5A
P_6.10
On-State Resistance at low
supply voltage
RDS(UV)_150 –1925mΩVIN =HIGH,
Tj=150°C,
VS=4.7V,
IL= +/-13.5A
P_6.11
Body diode forward voltage
drop2)
-VSD(rev)
1) 300 700 1000 mV VIN =0V,
IL= -13.5A
(see Figure 13
and Figure 17)
P_6.12
Output leakage current3) IL(OFF)_25
1) –0.11µATj=25°C,
VIN =LOW,
VOUT =0V
P_6.13
Output leakage current IL(OFF)_85
1) –0.11µATj=85°C,
VIN =LOW,
VOUT =0V
P_6.14
Output leakage current IL(OFF)_150 –160µATj=150°C,
VIN =LOW,
VOUT =0V
P_6.15
Switching a resistive load
Slew rate 30% to 70% VS(dV/dt)ON 15 35 55 V/µs RL=1Ω,
VS= 13.5V
(see Figure 10
and Figure 11 for
definitions)
P_6.16
Slew rate 70% to 30% VS-(dV/dt)OFF 12.5 25 37.5 V/µs P_6.17
Slew rate matching
(dV/dt)ON -|(dV/dt)OFF|
∆dV/dt-7 10 27 V/µs P_6.18
Turn ON time to 90% VStON – 0.35 1.0 µs P_6.19
Turn OFF time to 10% VStOFF – 0.85 1.5 µs P_6.20
Turn ON/OFF matching tON-tOFF -1.15 -0.5 -0.25 µs P_6.21
Wake up delay time twake
1) –2–µs P_6.62
Turn ON rise time 10% to
90% VS
tr– 0.25 0.6 µs P_6.22
Turn OFF fall time 90% to
10% VS
tf– 0.35 0.6 µs P_6.23
Switching an inductive load
Output voltage drop
limitation4)
VSD(CL)_25
1) 32 40 – V Tj=25°C,
IL=40mA,
P_6.26
Output voltage drop limitation VSD(CL)_150
1) 40 48 – V Tj=150°C,
IL= 13.5A,
P_6.27
Input circuitry
LOW level input voltage VIN(L) -0.3 – 0.8 V – P_6.28
Table 6 Electrical Characteristics: BTF50060-1TEA (cont’d)
VS = 6V to 19V, Tj = -40°C to 150°C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter Symbol Values Unit Note /
Test Condition
Number
Min. Typ. Max.
Datasheet 26 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Electrical Characteristics BTF50060-1TEA
HIGH level input voltage VIN(H) 2.0 – 6 V – P_6.29
Input voltage hysteresis VIN(HYS)
1) – 200 – mV – P_6.30
Input pull down resistor RIN 50 100 200 kΩ–P_6.31
Protection
Short circuit shutdown
threshold
IL(SC) 60 75 95 A 8V < VS< 19V P_6.32
Short circuit shutdown
threshold at low supply
voltage
IL(SC)LV
1) 10 – IL(SC) A4.7V<VS<8V P_6.33
Thermal shutdown
temperature
Tjt 150 1751) 2001) °C – P_6.34
Latch reset time tRESET
1) 40 55 80 ms VIN =LOW
6V < VS<28V
P_6.35
Output leakage current while
GND disconnected5)
IOUT(GND)
1) 00.51.0mAVS = VS(EXT),
GND pin
disconnected
P_6.40
Over voltage protection of
logic IC
VZ(IC) 45 50 – V IGND = 5mA P_6.41
Sense Output
Sense current steepness
(reciprocal)
kIS 10.5 13 15 k see Equation (6)
IL1 =13.5A,
IL2 =0A,
VS-VIS >3V
P_6.42
kIS temperature variance ∆kIS,Temp
1) -2 0 +2 % P_6.43
Sense current
IL=IL1
IIS(L1) 0.95 1.24 1.63 mA IL= 13.5A,
VS-VIS >3V
P_6.44
Sense current offset IIS(OFFSET) 50 200 350 µA VS-VIS >3V P_6.46
Sense current offset
temperature variance
∆IIS(OFFSET)
1)
-100 0 100 µA see Equation (8) P_6.47
Leakage Current at sense
output
IIS(LL) 00.11µAVIN = LOW for
t>tRESET,
VOUT <VOUT(OLL)
P_6.48
Fault signal current at sense
output
IIS(fault) 6.5 7.5 9 mA 6)
VS-VIS >3V
P_6.49
Current sense settling time
for turn ON to 90% IIS
tsIS(ON)
1) 013µsVS= 13.5V,
RL=1.0Ω,
RIS =1.0kΩ,
CSENSE < 100pF,
See Figure 21
P_6.50
Current sense settling time
for turn OFF to 10% IIS
tsIS(OFF)
1) 013µs P_6.51
Current sense settling time
matching
tsIS(ON)-
tsIS(OFF)
1)
-0.5 0 0.5 µs P_6.52
Table 6 Electrical Characteristics: BTF50060-1TEA (cont’d)
VS = 6V to 19V, Tj = -40°C to 150°C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter Symbol Values Unit Note /
Test Condition
Number
Min. Typ. Max.
Datasheet 27 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Electrical Characteristics BTF50060-1TEA
Current sense settling time
after changes of the load
current IL
tsIS(LC)
1) 012µsVIN =HIGH,
IL=1A↔50A
RIS =1.0kΩ,
CSENSE < 100pF,
See Figure 21
P_6.53
Turn ON current sense
settling time to IIS(fault) in case
of short circuit
tsIS(FAULT)
1) 013µsRIS =1.0kΩ,
CSENSE < 100pF,
See Figure 16
P_6.54
Open load at OFF
Output voltage threshold for
open load detection in OFF
state
VOUT(OLH) 55.56VVIN =LOW,
t>tRESET,
VS= 13.5V,
see Figure 23,
Figure 43 and
Figure 44
P_6.55
Output voltage threshold for
resetting open load detection
in OFF state
VOUT(OLL) 4.5 5 5.5 P_6.56
Output voltage hysteresis for
open load detection in OFF
state
∆VOUT(OL)
1) – 500 – mV P_6.57
Intrinsic output pull-down
resistance
ROUT(GND)
1) –450–kΩVOUT =4.5V,
VIN =LOW,
for t > tRESET
P_6.63
Undervoltage shutdown and restart
Undervoltage turn ON voltage VS(UV)ON –4.44.7VVS increasing,
VIN =HIGH
P_6.58
Undervoltage turn OFF
voltage
VS(UV)OFF –4.14.4VVS decreasing,
VIN =HIGH
P_6.59
Undervoltage turn ON/OFF
hysteresis
∆VS(UV)
1) –0.25–VVS(UV)ON -
VS(UV)OFF,
VIN =HIGH
P_6.60
Undervoltage restart delay
time
tdelay(UV) 468msVIN =HIGH P_6.61
1) Not subject to production test, specified by design
2) Please note - during ON state, the output voltage drop in inverse current operation is defined by VSD(inv) =RDS(ON) xIL
3) See Figure 28 for typical temperature dependency.
4) See Figure 30 for typical temperature dependency.
5) All pins disconnected except for VS and OUT
6) Valid after over temperature or short ciruit to ground until reset (t > tRESET, VIN = LOW, or undervoltage detection) or during
detection of open load in OFF state.
Table 6 Electrical Characteristics: BTF50060-1TEA (cont’d)
VS = 6V to 19V, Tj = -40°C to 150°C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter Symbol Values Unit Note /
Test Condition
Number
Min. Typ. Max.
Datasheet 28 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Electrical Characteristics BTF50060-1TEA
6.2 Parameter dependencies
6.2.1 Power Stage
Figure 25 Typical standby current IS(OFF) as a
function of the junction temperature Tj
VS= 13.5V, VIN = LOW for t > tRESET
Figure 26 Typical ON state resistance RDS(ON) as a
function of the junction temperature Tj
VS= 13.5V, IL= 13.5A, VIN =HIGH
Figure 27 Typical ON state resistance RDS(ON) as a
function of the supply voltage VS
Tj=25°C, IL= 13.5A, VIN =HIGH
Figure 28 Typ. output leakage current IL(OFF) as a
function of the junction temperature Tj
VS= 13.5V, VIN =LOW
0
2
4
6
8
10
12
0 5 10 15 20 25 30
VS [V]
RDS(ON) [mOhm]
Datasheet 29 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Electrical Characteristics BTF50060-1TEA
6.2.2 Input Circuit
Figure 29 Typical body diode forward voltage
drop -VSD(rev) as a function of the
junction temperature Tj
IL=-4A, VIN =LOW
Figure 30 Typical output voltage drop limitation
VSD(CL) as a function of the junction
temperature Tj
IL=40mA, VIN =LOW
Figure 31 Typ. input pull down resistor RIN as a
function of the junction temperature Tj
Datasheet 30 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Electrical Characteristics BTF50060-1TEA
6.2.3 Protection Functions
Figure 32 Typical short circuit shutdown
threshold as a function of the supply
voltage VS; Tj= 25°C
Figure 33 Typical short circuit shutdown
threshold as a function of the junction
temperature Tj; VS= 13.5V
Figure 34 Typical short circuit overshooting as a
function of the dISC/dt (device is in ON
state when short circuit appears)
Tj=25°C
0
20
40
60
80
100
120
0.1 1 10 100
dIL/dt [A/µs]
Ipeak,SC [A]
Datasheet 31 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Electrical Characteristics BTF50060-1TEA
6.2.4 Diagnosis Functions
Figure 35 Typical sense current slope kIS as a
function of the junction temperature Tj
VS= 13.5V, IL1=13.5A, IL2=0A, VIN=HIGH
Figure 36 Typical sense current slope kIS as a
function of the supply voltage VS
Tj=25°C, IL1=13.5A, IL2=0A, VIN=HIGH
Figure 37 Typical sense current slope kIS as a
function of the load current IL1
VS= 13.5V, Tj=25°C, IL2=0A, VIN =HIGH
Figure 38 Typical sense current offset IIS(OFFSET)
as a function of the junction
temperature Tj
VS= 13.5V, VIN = HIGH
0
50
100
150
200
250
300
-50 0 50 100 150
Tj [°C]
IIS(OFFSET) [µA]
Datasheet 32 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Electrical Characteristics BTF50060-1TEA
Figure 39 Typical sense current offset IIS(OFFSET)
as a function of the supply voltage VS
Tj=25°C, VIN =HIGH
Figure 40 Typical leakage current IIS(LL) at the
sense output as a function of the
junction temperature Tj
VS= 13.5V, VIN = LOW for t > tRESET
Figure 41 Typical leakage current IIS(LL) at the
sense output as a function of the
supply voltage VS
Tj=25°C, VIN = LOW for t > tRESET
Figure 42 Typical fault current IIS(fault) at the sense
output as a function of the voltage
VSIS =VS-VIS
VS= 13.5V, VIN = HIGH
0
0.05
0.1
0.15
0.2
0.25
-50 0 50 100 150
Tj [°C]
IIS(LL) [µA]
Datasheet 33 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Electrical Characteristics BTF50060-1TEA
Figure 43 Typcical output voltage thresholds for
open load detection during OFF
VOUT(OLH) and VOUT(OLL) as a function of
the supply voltage VS
Tj=25°C
Figure 44 Typical output voltage thresholds for
open load detection during OFF
VOUT(OLH) and VOUT(OLL) as a function of
the junction temperature Tj
VS= 13.5V
0
2
4
6
8
10
0102030
VS [V]
VOUT(OLL),VOUT(OLH) [V]
Vout(OLH) Vout(OLL)
0
2
4
6
8
10
-50 0 50 100 150
Tj [V]
VOUT(OLL),VOUT(OLH) [V]
Vout(OLH) Vout(OLL)
Datasheet 34 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Application Information
7 Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
Figure 45 Application Diagram for switching an inductive load without external circuitry supporting
open load detection in OFF state
Figure 46 Application Diagram with external circuitry supporting open load detection in OFF state
Note: This are very simplified examples of an application circuit. The function must be verified in the real
application.
Table 7 Typical Application Parameter1)
1) Values are calculated and not subject to production test.
Parameter Symbol Typical Values Note / Condition
Range of typical PWM
frequencies
fPWM 0 Hz ... 33 kHz duty cycle = 0%, 10% ... 90%
Nominal Load Current IL(NOM) 16.5 A TA= 85°C, Tj<150°C, RthJA =22K/W
DC operation or fPWM < 1kHz; VS=19V
Typical load current at 10 kHz IL(10kHz) 11 A TA= 85°C, Tj<150°C, RthJA =22K/W
fPWM = 10kHz, duty cycle = 95%,
VS=19V
Typical load current at 25 kHz IL(25kHz) 7 A TA= 85°C, Tj<150°C, RthJA =22K/W
fPWM = 25kHz, duty cycle = 95%,
VS=19V,
appl_example_L.emf
IN VS
GND
RIS
1k
OUT
Load
GND
Vbat
+5V
IS
µC
e.g.
XC866 RSENSE
RINPUT
10k
10k
D1
CVS
470µF
appl_example_OL.emf
IN VS
GND
R
IS
1k
OUT
GND
V
bat
+5V
IS
µC
e.g.
XC866 R
SENSE
R
INPUT
10k
10k
R
OL
3k3
R
L_OL
33k
T
1
Load
D
1
C
VS
470µF
Datasheet 35 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Application Information
7.1 Further Application Information
• Please contact us for information regarding the pin FMEA
• For further information you may visit http://www.infineon.com/
Table 8 Bill of Material
Reference Value Purpose
RINPUT 10 kΩProtection of the µC during overvoltage and reverse battery condition
RSENSE 10 kΩProtection of the µC during overvoltage and reverse battery condition
RIS 1 kΩSense resistor. Shunt resistor for measuring IIS by the µC’s AD converter.
CVS 470µF Capacitor buffering the supply voltage
Switching an inductive load
D1Freewheeling diode for commutation of load current. Depending on load current
and thermal boundary conditions, it may be necessary to use active freewheeling
by a MOSFET, instead of the diode.
External circuitry supporting open load at OFF detection
T1BC807 Switches the supply voltage for activation / deactivation of Open Load at OFF
detection
ROL 3.3kΩPull up resistor for Open Load detection in OFF state
RL_OL 33kΩPull down resistor for deactivating Open Load detection in OFF state
Datasheet 36 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Package Outlines and Parameters
8 Package Outlines and Parameters
Figure 47 PG-TO252-5-311
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Table 9
Parameter Value
Jedec humidity category acc. J-STD-020-D MSL3
Jedec classification temperature acc. J-STD-020-D 260°C
Dimensions in mm
Datasheet 37 Rev. 1.0, 2010-06-24
BTF50060-1TEA
Revision History
9 Revision History
Revision Date Changes
DS V1.0 2010-06-24 Initial datasheet version.
Edition 2010-06-24
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
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