
FDP20N50F / FDPF20N50FT N-Channel MOSFET
FDP20N50F / FDPF20N50FT Rev. C1
www.fairchildsemi.com
2
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FDP20N50F FDP20N50F TO-220 - - 50
FDPF20N50FT FDPF20N50FT TO-220F - - 50
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250μA, Referenced to 25oC-0.7-V/
oC
IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 10 μA
VDS = 400V, TC = 125oC - - 100
IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 10A - 0.22 0.26 Ω
gFS Forward Transconductance VDS = 20V, ID = 10A (Note 4) -25-S
Ciss Input Capacitance VDS = 25V, VGS = 0V
f = 1MHz
- 2550 3390 pF
Coss Output Capacitance - 350 465 pF
Crss Reverse Transfer Capacitance - 27 40 pF
Qg(tot) Total Gate Charge at 10V
VDS = 400V, ID = 20A
VGS = 10V
(Note 4, 5)
-5065nC
Qgs Gate to Source Gate Charge - 14 - nC
Qgd Gate to Drain “Miller” Charge - 20 - nC
td(on) Turn-On Delay Time
VDD = 250V, ID = 20A
RG = 25Ω
(Note 4, 5)
- 45 100 ns
trTurn-On Rise Time - 120 250 ns
td(off) Turn-Off Delay Time - 100 210 ns
tfTurn-Off Fall Time - 60 130 ns
ISMaximum Continuous Drain to Source Diode Forward Current - - 20 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 80 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 20A - - 1.5 V
trr Reverse Recovery Time VGS = 0V, ISD = 20A
dIF/dt = 100A/μs (Note 4)
- 154 - ns
Qrr Reverse Recovery Charge - 0.5 - μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 20A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics