KSD-T7F001-000 1
SUF1002
Dual N-channel Trench MOSFET
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
Lithium Ion Battery Application.
Notebook PC , Motor drive Application.
Features
• Low Crss : Crss=36pF(Typ.)
• Low gate charge : Qg=4.2nC(Typ.)
• Low RDS(on) :RDS(on)=24mΩ(Typ.)
• Low VGS(th) : VGS(th)=1.0~3.0V
Ordering Information
Type NO. Marking Package Code
SUF1002 SUF1002 SOP-8
Outline Dimensions unit : mm
PIN Connections
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
5. Drain 2
6. Drain 2
7. Drain 1
8. Drain 1
3.81 Typ.
5.88~6.18
3.70~3.90
1.27 Typ.
0.27 Max.
1.24~1.44
0.46 Min.
0.27 Max.
0.52 Max.
4.81~5.01
Block Diagram
KSD-T7F001-000 2
SUF1002
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 30 V
Gate-source voltage VGSS ±20 V
Drain current (DC) ID 5.8 A
Drain current (Pulsed) * I
DP 23.2 A
Total Power dissipation ** PD 2.0 W
Avalanche current (Single) ② IAS 5.8 A
Single pulsed avalanche energy ② EAS 72 mJ
Avalanche current (Repetitive) ① IAR 5.8 A
Repetitive avalanche energy ① EAR 3.4 mJ
Junction temperature TJ 150
Storage temperature range Tstg -55~150
°C
* Limited by maximum junction temperature
* *Device moonted on a glass-epoxy board
Characteristic Symbol Typ. Max Unit
Thermal
resistance Junction-ambient Rth(J-a) 62.5 ℃/W
KSD-T7F001-000 3
SUF1002
Electrical Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Drain-source breakdown voltage BVDSS ID=250µA, VGS=0 30 - - V
Gate threshold voltage VGS(th) ID=250µA, VDS= VGS 1.0 - 3.0 V
Drain-source cut-off current IDSS V
DS=30V, VGS=0V - - 1
µA
Gate leakage current IGSS VDS=0V, VGS=±20V - -
±100 nA
VGS=10V, ID=2.9A - 24 30
mΩ
Drain-source on-resistance RDS(ON)
VGS=5.0V, ID=2.9A - 28 34
mΩ
Forward transfer conductance ④ gfs V
DS=5V, ID=5.8A - 12 - S
Input capacitance Ciss - 370 560
Output capacitance Coss - 60 90
Reverse transfer capacitance Crss
VGS=0V, VDS=10V,
f=1MHz
- 36 54
pF
Turn -on del ay time td(on) - 1.2 -
Rise time tr - 1.1 -
Turn-off delay time td(off) - 2.5 -
Fall time tf
VDD=15V, ID=5.8A
RG=10Ω
③④
- 1.1 -
ns
Total gate charge Qg - 4.2 6.3
Gate-source charge Qgs - 0.9 1.4
Gate-drain charge Qgd
VDS=15V, VGS=5V
ID=5.8A
③④ - 1.4 2.1
nC
Source-Drain Diode Ratings and Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min Typ Max Unit
Source current IS - - 1.5
Source current(Plused) ① ISM
Integral reverse diode
in the MOSFET - - 6.0
A
Forward voltage ④ VSD V
GS=0V, IS=1.5A - - 1.2 V
Reverse recovery time trr - 90 - ns
Reverse recovery charge Qrr
Is=1.5A
diS/dt=100A/us - 0.5 - uC
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=3.4mH, IAS=5.8A, VDD=15V, RG=25Ω
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤2%
④ Essentially independent of operating temperature
KSD-T7F001-000 4
SUF1002
℃
℃
Fig. 1 ID - VDS
Fig. 4 IS - VSD
Fig. 3 RDS
(
on
)
- ID
Fig. 6 VGS - QG
Electrical Characteristic Curves
Fig. 2 ID - VGS
Fig. 5 Capacitance - VDS
KSD-T7F001-000 5
SUF1002
*
t
C C
Fig. 8 RDS(on) - TJ
Fig. 9 ID - Ta
Fig. 7 VDSS - TJ
Fig. 10 Safe Operating Area
KSD-T7F001-000 6
SUF1002
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 E
AS Test Circuit & Waveform
=
KSD-T7F001-000 7
SUF1002
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
KSD-T7F001-000 8
SUF1002
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
