SIEMENS BCR 133W NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (Ry=10kQ, Ro=10kQ) YSO05551 Type Marking |Ordering Code =| Pin Configuration Package BCR133W |WCs |Q62702-C2288 |1=B j2=-E |3=C |SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VoEO 50 Vv Collector-base voltage Vcso 50 Emitter-base voltage Veso 10 Input on Voltage Viton) 20 DC collector current Ie 100 mA Total power dissipation, Ts = 124C Prot 250 mw Junction temperature Tj 150 C Storage temperature Tstg - 65 ...+ 150 Therma! Resistance Junction ambient 1) Panga < 240 K/W Junction - soldering point Aihus < 105 4) Package mounted on peb 40mm x 40ram x 1.5mm / 0.5em? Cu Semiconductor Group 619 11.96SIEMENS BCR 133W Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. [typ. |max. DC Characteristics Collector-emitter breakdown voltage Vipr)cEO Vv Io = 100 PA, Ig = 0 50 - - Collector-base breakdown voltage ViBricBo Ilo = 10 pA, p= 90 50 - - Collector cutoff current IcBo nA Veg = 40 V, fe = 0 - - 100 Emitter cutoff current lEBo mA Vep = 10V, lo =O - - 0.75 DC current gain fee - Ilo =5 MA, Vor =5V 30 - - Collector-emitter saturation voltage 1) VoEsat Vv Ilo = 10 MA, Ig = 0.5 mA - - 0.3 Input off voltage Vivotty Io = 100 pA, Voge = 5 V 0.8 - 15 Input on Voltage Vion) lo=2 MA, Veg = 0.3V - 2.5 Input resistor Ry 7 10 13 kQ Resistor ratio AyfRe 0.9 1 11 - AC Characteristics Transition frequency fr MHz io = 10 mA, Voge = 5 V, f= 100 MHz - 130 - ! Collector-base capacitance Cob pF Vop = 10 V, f= 1 MHz - 2 - 1) Pulse test: t< 300us; D < 2% Semiconductor Group 620 41.96SIEMENS BCR 133W DC Current Gain fre = f (Ic) Collector-Emitter Saturation Voltage Vor = 5V (common emitter configuration) Voesat = Nc), fre = 20 109 102 107 10? i 40, mae 10 ~ 10 . 10 mA 0.0 0.2 e Input on Voltage Viggn) = Alc) i ae. 0.4 0.6 | Ld Vv 1.0 Vorsat Input off voltage Vi(off) = Alc) Voge = 0.3V (common emitter configuration) Voge = 5V (common emitter configuration) i 0.0 O.5 1.0 te V. on) 15 2.0 v ee Viton 3.0 Semiconductor Group 621 11.96SIEMENS BCR 133W Total power dissipation Po, = f(T)"; Ts) * Package mounted on epoxy 300 mw 100 \ 50 \ 0 \ 0 20 40 60 80 100 120 C 150 te Ty Ts Permissible Pulse Load Rinys = Atp) Permissible Pulse Load Protmax / Ptotoc = Ato) eth TTT CT i 0. LN gail MW oN 7o* 10 0% 10 t0% 1075 10 Qo Semiconductor Group 622 11.96